DIODE 10D2 Search Results

Contextual Info: 5SDA 10D2303  5SDA 10D2303 Old part no. DA 807-970-23 Avalanche Diode Properties • low on-state voltage • avalanche reverse characteristics  high operational reliability  suitable for parallel operation Key Parameters = 2 300 V RRM = 1 140

Contextual Info: 5SDA 10D2303  5SDA 10D2303 Old part no. DA 807-970-23 Avalanche Diode Properties • low on-state voltage • avalanche reverse characteristics  high operational reliability  suitable for parallel operation Key Parameters = 2 300 V RRM = 1 140

10D1703

Abstract: 10D2303 10D2003
Contextual Info: Key Parameters VRRM = 2300 IFAVM = 1140 IFSM = 13.5 VF0 = 0.83 rF = 0.30 Avalanche Rectifier Diode V A kA V mΩ Ω 5SDA 10D2303 Doc. No. 5SYA 1120 - 01 Apr-98 Features • • • • • Optimized for line frequency rectifiers Low on-state voltage, narrow VF-bands for parallel operation

vrrm 400v if 20A ultra fast recovery diode

Abstract: 10D2A U20GL2C48A 20GL2C
Contextual Info: U20GL2C48A TOSHIBA HIGH EFFICIENCY DIODE STACK HED SILICON EPITAXIAL TYPE U20GL2C48A Unit: mm SWITCHING MODE POWER SUPPLY APPLICATION CONVERTER & CHOPPER APPLICATION Repetitive Peak Reverse Voltage : VRRM = 400V Average Output Rectified Current : IO = 20A

20JL2C

Abstract: 600v 2A ultra fast recovery diode U20JL2C48A 10D2A
Contextual Info: U20JL2C48A TOSHIBA HIGH EFFICIENCY DIODE STACK HED SILICON EPITAXIAL TYPE U20JL2C48A SWITCHING MODE POWER SUPPLY APPLICATION CONVERTER & CHOPPER APPLICATION Repetitive Peak Reverse Voltage Unit: mm : VRRM = 600V Average Output Rectified Current : IO = 20A

TOSHIBA RECTIFIER

Contextual Info: U20GL2C48A TOSHIBA HIGH EFFICIENCY DIODE STACK HED SILICON EPITAXIAL TYPE U20GL2C48A Unit: mm SWITCHING MODE POWER SUPPLY APPLICATION CONVERTER & CHOPPER APPLICATION : VRRM = 400V Average Output Rectified Current : IO = 20A Ultra Fast Reverse−Recovery Time

Contextual Info: U20JL2C48A TOSHIBA HIGH EFFICIENCY DIODE STACK HED SILICON EPITAXIAL TYPE U20JL2C48A SWITCHING MODE POWER SUPPLY APPLICATION CONVERTER & CHOPPER APPLICATION Average Output Rectified Current : VRRM = 600V : IO = 20A Ultra Fast Reverse−Recovery Time : trr = 35ns (Max)

Contextual Info: U20GL2C48A TOSHIBA HIGH EFFICIENCY DIODE STACK HED SILICON EPITAXIAL TYPE U20GL2C48A Unit: mm SWITCHING MODE POWER SUPPLY APPLICATION CONVERTER & CHOPPER APPLICATION l Repetitive Peak Reverse Voltage : VRRM = 400V l Average Output Rectified Current : IO = 20A

20JL2C

Abstract: U20JL2C48A TOSHIBA DIODE DATABOOK 10D2A toshiba lead free mark
Contextual Info: U20JL2C48A TOSHIBA HIGH EFFICIENCY DIODE STACK HED SILICON EPITAXIAL TYPE U20JL2C48A SWITCHING MODE POWER SUPPLY APPLICATION CONVERTER & CHOPPER APPLICATION Average Output Rectified Current : VRRM = 600V : IO = 20A Ultra Fast Reverse−Recovery Time : trr = 35ns (Max)

Contextual Info: U20JL2C48A TOSHIBA HIGH EFFICIENCY DIODE STACK HED SILICON EPITAXIAL TYPE U20JL2C48A SWITCHING MODE POWER SUPPLY APPLICATION CONVERTER & CHOPPER APPLICATION z z z z Unit: mm Repetitive Peak Reverse Voltage : VRRM = 600V Average Output Rectified Current : IO = 20A

20jl2c

Contextual Info: U20JL2C48A TOSHIBA HIGH EFFICIENCY DIODE STACK HED SILICON EPITAXIAL TYPE U20JL2C48A SWITCHING MODE POWER SUPPLY APPLICATION CONVERTER & CHOPPER APPLICATION z z z z Unit: mm Repetitive Peak Reverse Voltage : VRRM = 600V Average Output Rectified Current : IO = 20A

motorola diode cross reference

Abstract: replacement UF5402 1m5819 IR 30D1 diode IR 30D1 10DF2 "cross reference" 1n4007 "direct replacement" diode RU4A IR 10D4 1n5818 "direct replacement"
Contextual Info: CROSS REFERENCE Schottky Barrier Diode -Single MOTOROLA IR 1N5817 SANKEN G I 1N5817 AK03 AK04 AK06 AK09 EK03 EK04 EK06 EK09 1N5818 1M5819 MBR150 MBR160 MBR190 MBR1100 MBR330 MBR340 MBR350 MBR360 MBR390 MBR3100 MBRS120LT3 MBRS130LT3 MBRS130T3 MBRS140T3 MBRS190T3

Contextual Info: U20GL2C48A TOSHIBA HIGH EFFICIENCY DIODE STACK HED SILICON EPITAXIAL TYPE U20GL2C48A Unit: mm Average Output Rectified Current : VRRM = 400V : IO = 20A Ultra Fast Reverse−Recovery Time : trr = 35ns (Max) Repetitive Peak Reverse Voltage 3±0.2 SWITCHING MODE POWER SUPPLY APPLICATION

Contextual Info: U20GL2C48A TOSHIBA HIGH EFFICIENCY DIODE STACK HED SILICON EPITAXIAL TYPE U20GL2C48A Unit: mm Repetitive Peak Reverse Voltage : VRRM = 400V Average Output Rectified Current : IO = 20A Ultra Fast Reverse−Recovery Time : trr = 35ns (Max) 3±0.2 SWITCHING MODE POWER SUPPLY APPLICATION

10D4 DIODE

Abstract: 10d4
Contextual Info: SILICON RECTIFIER DIODE IODI— IODIO i a /i oo ~ i o o o v FEATURES • Miniature Size 0 Low Forward Voltage Drop • Low Reverse Leakage Current • High Surge Capability ° 52mm Inside Tape Spacing Package Available MAXIMUM RATINGS >vs TYPE Voltage Rating

10D10 diode

Abstract: 10D10 10d2 diode 10D4 T3B diode 10D6 diode 10dl 10D2 10D8 10D4 DIODE
Contextual Info: SILICON RECTIFIER DIODE IODI— IODIO ia /ioo ~ iooov FEATUR ES • Miniature Size 0 Low Forward Voltage Drop ° Low Reverse Leakage Current • High Surge Capability ° 52mm Inside Tape Spacing Package Available MAXIMUM R A T IN G S >\T¥PE Voltage Rating

F10P100

Abstract: 10EF1 12MF30 diode f40c 60KQ10B 30MF40 F10KF20B 12MF40 C16P04Q C25P40F
Contextual Info: SELECTORS GUIDE S c h o ttk y B a rrie r Diode-Single C ase Style Io A V FM (V) 1.0 0.45 30 11EQS03L 52 0.45 20 ♦ 11EQS02L 50 0.55 30 40 ♦ 11EQ03 11EQ04 60 0.58 50 60 ♦ 11EQ05 11EQ06 62 0.85 90 100 ♦ 11EQ09 11EQ10 64 0.55 30 40 ♦ 11EQS03 11EQS04

Q2N4401

Abstract: D1N3940 Q2N2907A D1N1190 Q2SC1815 Q2N3055 Q2N1132 D1N750 D02CZ10 D1N751
Contextual Info: Analog Parts Index Digital Mixed-Signal Device Type Index Click on a device type to jump to its page Actuator Fluid Level Detector Operational Amplifier Small-Signal Mosfet Amplifier/Equilizer Ground Fault Interrupter Opto-Isolator Switch Mulitplier Analog

sx3704

Abstract: BRC157 BRC-116 Germanium Diode aa143 1n4148 ITT TRANSISTOR BC147 BC107/spice model bf199 BY238 SN76226DN tungsram
Contextual Info: rh is Booklet • • • ue to fluctuations in availability, some types of semiconductors used in Thorn products have >f necessity changed from those originally specified and quoted in service literature. This )lus the fact that some service replacements are

NEC car radio 4.5-Mhz

Abstract: LCO17 SP MZ8 transistor dk 50 NEC PD6121 diodo 72 DIODO LED Hoshiden LED display for radio pd7225
Contextual Info: P R E L IM IN A R Y D A TA S H E E T M O S IN T E G R A T E D C IR C U IT uPD17012GF-011 PLL Frequency Synthesizer and Controller for Car Audio FM, MW, and LW Tuners The/iPD17012GF-011 isa CMOS LSI that was developed for FM, M W ,and LW tu n ers em ploying the world­

IRF 544 N MOSFET

Abstract: Spice 2 computer models for hexfets 4af2NPP IR transistor D586 induction cooker fault finding circuit diagrams TRANSISTOR mos fet D482 electronics digest transistor D357 equivalent D515 transistor 1RF511
Contextual Info: International S R ectifier HEXFET DAIABOOK POWER MOSFET APPLICATION AND PRODUCT DATA 1985 THIRD EDITION PUBLISHED BY INTERNATIONAL RECTIFIER, 233 KANSAS ST., EL SEGUNDO, CALIFORNIA 90245 The information presented in this DATABOOK is believed to be accurate and reliable. However, International Rectifier can assume no

Contextual Info: Final E le c tric a l S p e c ific a tio n s L in tlA B . LTC1265/LTC1265-3.3/LTC1265-5 TECHNOLOGY 1.2A, High E fficiency S te p d o w n D C /D C C o n v e rte r N o v e m b er 1994 KfflURCS D€SCMCTIOn • H ig h Effic ie n c y: U p to 9 5 % The LTC 1265 is a m onolithic step-dow n current m ode

TRANSISTOR S2A

Abstract: 10D2A
Contextual Info: Transistor Outline Package Surface-Mount Type TO-220SM Package Outline Dimensions Outline Dimensions Unit: mm 1.32 2.54 ±0.25 1 2 0.6 10.6 max 3 0.5 2 1 (Bottom view) 0.1 2.6 2.54 ±0.25 4.7 max 0.76 3.0 ±0.2 1.5 9.1 10.3 max 3 Land Pattern Example Unit: mm

TRANSISTOR S2A

Abstract: IGBT cross TE24L 10D2A
Contextual Info: Transistor Outline Package Surface Mount Type Embossed TE24L Tape for the TO-220SM Package Tape Dimensions Unit: mm 12.0 ±0.1 φ1.5 +0.1 –0.0 Y 4.0 ±0.1 1.75 ±0.1 2.0 ±0.1 0.4 ±0.05 13.9 φ2.0 ±0.1 24.0 ±0.3 11.5 ±0.1 Y X’ X Y’ Y’ 5.2 ±0.1