DIEM Search Results

BT 1496

Abstract: 34N80 diode 931 p 7
Contextual Info: HiPerFETTM Power MOSFETs Single DieMOSFET IXFN 34N80 N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low trr RDS on D S Symbol Test Conditions VDSS TJ = 25°C to 150°C 800 V VDGR TJ = 25°C to 150°C; RGS = 1 MΩ 800 V VGS VGSM Continuous Transient

National Telephone Services

Contextual Info: N DIEmentions SURVEY – GIVE US YOUR COMMENTS AND BE ELIGIBLE TO WIN AN NEC READY 120LT NOTEBOOK PC. To help keep you well informed about National’s Die Products offerings, we’d like to know a little about you and your use of die products. Please complete this survey, fax it to us at 1-207-541-6140 U.S.A. . A drawing will be held from among

Contextual Info: HiPerFETTM Power MOSFETs Single DieMOSFET IXFN 34N80 N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low trr VDSS = 800 V ID25 = 34 A RDS on = 0.24 W D trr £ 250 ns Preliminary data sheet S Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C

Contextual Info: ˜Ando Electric Co., Ltd. Korea Fxp Limted,Inc.Mr.Geary Africa 2265 Wetwood Blvd #588,Los Angeles,Ca 90064 Ando Europe B. V. Headquarters Dalsteindreef 57-77 1112 XC Diemen The Netherlands Seoul Electronics co.,Ltd. 222-2 Hongje-dong,Seodaemooon-ku,Seoul

Contextual Info: Plastic Packages for Integrated Circuits Package Outline Drawing V256.17x17C 256 PLASTIC BALL GRID ARRAY PACKAGE PBGA Rev 0, 6/13 Ø0.50(3X). REF COMMON SYMBOL DIEMENSIONS 1 2 3 4 5 6 7 8 9 10 1112 13 14 15 16 Package PBGA Body Size X D 17.00 Y E 17.00 X

Contextual Info:  211 N. First Street 612-849-6205 Minneapolis, MN. 55401 www.soberton.com info@soberton.com PRODUCT NAME ELECTRET CONDENSER MICROPHONE PART NUMBER DIEMESION TYPE EM6050P Φ6.0x5.0mm PIN APPROVED BY CHECKED BY ISSUED BY Daniel Liu Max Pong Ryan Wei 50 100

Contextual Info: HiPerFETTM Power MOSFETs Single DieMOSFET IXFN 34N80 N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low trr VDSS = 800 V ID25 = 34 A RDS on = 0.24 W D trr £ 250 ns Preliminary data sheet S Symbol Test Conditions Maximum Ratings VDSS T J = 25°C to 150°C

Contextual Info: r-0• 2E6TÖ88E09T 2EIOMUM0 «esCHOTZT M KM C O Pm C H T »990 TECHNISCHEM « » T SCHRiTT DIEMEN. 0 E - A/#> DEUTSCHLAHO «M9N A U E flCCKTi VOMEHJU.TEM Q D 1 pm POLZ. »HO L±Q. 4 « am * HAi. t£H Wtft UNS VOR K *Lftft£ «OtfUSE «DREHT A ’ 4 5

34N80

Abstract: 125OC 34N8
Contextual Info: HiPerFETTM Power MOSFETs Single DieMOSFET IXFN 34N80 N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low trr VDSS = 800 V ID25 = 34 A RDS on = 0.24 W D trr £ 250 ns Preliminary data sheet S Symbol Test Conditions Maximum Ratings VDSS T J = 25°C to 150°C

Contextual Info: Cooling to keep your Key Chips Alive Guy Diemunsch Aavid Thermalloy 70 Commercial Street, Suite 200 Concord, NH 03301 USA Abstract: plenty of cooling technologies are available, they can be used to spread the heat, conduct it to or exchange it with the cold source. We

Peltier Thermo

Contextual Info: Power Thermal Solution Solutions Division Cooling to keep your Key Chips Alive Guy Diemunsch Aavid Thermalloy diemunsch.g@aavid.com Agenda Power Thermal Solution Solutions Division From the Chip to the Fluid The story of conductivity and heat density Technologies and Heat Transfer coefficients

DS32ELX0124

Abstract: DS32ELX0421 HDMI Fiber HDMI to SDI serializer AN-1887
Contextual Info: National Semiconductor Application Note 1887 Nate Unger, Rodger Diemer September 12, 2008 1.0 Introduction During initialization, the data valid line to the serializer is set high. This sends IDLE characters from the serializer to the deserializer over each link. In response, the deserializer sets

VFIR

Abstract: TFDU4300 TFBS4711 TFBS5614 TFBS5617 TFBS5711 TFBS6614 TFDU4100 TFDU5103 TFDU5107
Contextual Info: VISHAY Vishay Semiconductors Transceivers for Every Application Product Diemensions LxWxH Pins mm3 Pad Pitch Idle Shutdown Supply Current Current Transmit Distance Operating Voltage Logic Voltage Supply (V) (mm) (mA) (µA) (m) (V) Features Transceivers Recommended for New Designs

Contextual Info: REVISIONS SYM ZO NE EC N , D K1 Q JO1 00 ERN PLATING NO. REVISED ADD DIEMNSIONS FOR SHIELD BOARD LOCK E APPRD. DATE L.C. A ug4/09 JUL25/12 S.MUGAN '-L 0 O .9 2 ± O . 0 5 !i [0 .0 3 6 ± .0 0 2 ] \ - 0 - \ O . 1 O \ w \ H 0 L E 4 R E Q 'D 0 2 .3 O ± O .O 5

A76 battery

Abstract: 0B4 DC-DC
Contextual Info: in ix Y s HiPerFET Power MOSFETs Single DieMOSFET ix f n 34N80 V.DSS I D25 RDS on N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Lowtrr = 800 V = 34 A = 0.24 f t trr <250 ns Preliminary data sheet Symbol Test Conditions V„ss Vocn Tj =25°C to 150°C

F-SW32

Abstract: Sn96 soldering wire
Contextual Info: ssAc 2010 SMD- Lötdrahtfür feinsteLötstellenmit 3 Metallen:Zinn - Silber - KuPfer SMD Solderingwire for smallestsoldering jointswith 3 metals:tin - silver- copper der Bauteileerschwert DieMiniaturisierung im von Kleinstbauteilen das Reoarieren Handlötbereich.

Contextual Info: Ì 4 NICHT 5IND VERMASSTE KANTEN N I C HT MAßSTÄBLICH ÄNDERUNGEN N ISCHEN BEHALTEN X IN LZ Ln PO PRO L CD 1RF I HEI CM CO +0. 3 - . 1 D IE DE M UNS 2 ZEICHNUNG TECH­ FO RTSC H RITT W IR Í 3 GESCHÜTZT (C^COPY'R I G H T DIEM EN, AMR VOR ALLE DEUTSCHLAND

Contextual Info: MOLDED DIALLYL INSULATED TERMINALS DIALLYL PHTHALATE INSULATED TERMINALS M A T E R IA L S : D-:ai:yl P d h T a ts is recom m ended f ' co n tin u o u s d u ty tem ps up to 350° F . i t has a hiqh diem ctr breakdow n and nas r; 94 VO U P auny. T e rm in a l: Brass per QQ-B-626. A lloy 360

Contextual Info: □ IXYS H H ifl JL æ* X HiPerFET Power MOSFETs Single DieMOSFET ix f n 34N80 v , DSS ^D25 N-Channel Enhancement Mode Avalanche Rated, Highdv/dt, Lowtrr R DS on = 800 V = 34 A = 0.24 Q trr < 250 ns Preliminary data sheet Maximum Ratings Symbol Test C onditions

Contextual Info: Plastic Packages for Integrated Circuits Package Outline Drawing V256.17x17B 256 LOW PROFILE PLASTIC BALL GRID ARRAY PACKAGE LBGA Rev 0, 1/12 Ø0.50(3X). REF COMMON SYMBOL DIEMENSIONS 1 2 3 4 5 6 7 8 9 10 1112 13 14 15 16 Package LBGA Body Size X D 17.00

SMT pitch roadmap

Abstract: bare die
Contextual Info: N DEDICATED W elcome to National Semiconductor’s DIEmentions. Within these pages is information on how National is supporting the growing need for bare die, Known Good Die KGD , flexible processing flows, and assorted shipping carriers. In DIEmentions will be the latest information on die and packaging availability. There will be

Contextual Info: TL2218-285, TL2218-285Y EXCALIBUR CURRENT-MODE SCSI TERMINATOR SLVS072C – DECEMBER 1992 – REVISED OCTOBER 1995 available features • • • • • • • • Fully Integrated 9-Channel SCSI Termination No External Components Required Maximum Allowed Current Applied at First

XP1073-BD

Abstract: xp1073 DM6030HK XP107
Contextual Info: 34.0-37.0 GHz GaAs MMIC Power Amplifier P1073-BD February 2010 - Rev 16-Feb-10 Features Ka-Band 6W Power Amplifier 22.0 dB Small Signal Gain +37.0 dBm Pulsed Saturated Output Power 24% Power Added Efficiency PAE % 100% On-Wafer RF, DC and Output Power Testing

Contextual Info: TL2218-285, TL2218-285Y EXCALIBUR CURRENT-MODE SCSI TERMINATOR SLVS072C – DECEMBER 1992 – REVISED OCTOBER 1995 available features • • • • • • • • Fully Integrated 9-Channel SCSI Termination No External Components Required Maximum Allowed Current Applied at First