DIAGRAM OF 2000 WATTS POWER AMP Search Results

Contextual Info: PTF 10041 12 Watts, 1.99 GHz GOLDMOS Field Effect Transistor Description The PTF 10041 is a 12–watt GOLDMOS FET intended for large signal amplifier applications from 1.0 to 2.0 GHz. It operates at 38% efficiency with 10 dB minimum gain. Nitride surface passivation and

3000 watt audio circuit diagram

Abstract: 300 watts amplifier circuit diagram 4-125A 1500 watt audio amplifier circuit diagram 500 watts amplifier centrifugal blowers varian 4D21 500 watts audio amplifier diagram linear power amplifier
Contextual Info: 4-125A 4D21 RADIAL-BEAM POWER TETRODE • MODULATOR OSCILLATOR AMPLIFIER T E C H N I C A L DATA The EIM AC 4-125A is a radial-beam power tetrode intended for use as an amplifier, oscillator, or modulator. It has a maximum plate-dissipation rating of 125 watts and a maximum plate-voltage rating of 3000 volts at frequencies

702 P TRANSISTOR

Abstract: 702 Z TRANSISTOR G200 JMC5701 ghz 100 watts amplifier circuit diagram capacitor 0.1uf DIGIKEY resistor 220ohm
Contextual Info: GOLDMOS PTF 10041 Field Effect Transistor 12 Watts, 1.99 GHz Description The PTF 10041 is a 12–watt GOLDMOS FET intended for large signal amplifier applications from 1.0 to 2.0 GHz. It operates at 38% efficiency with 10 dB minimum gain. Nitride surface passivation and

041 CAPACITOR PHILLIPS

Abstract: G200 PTF 10041 DBX12
Contextual Info: GOLDMOS PTF 10041 Field Effect Transistor 12 Watts, 1.99 GHz Description The PTF 10041 is a 12–watt GOLDMOS FET intended for large signal amplifier applications from 1.0 to 2.0 GHz. It operates at 38% efficiency with 10 dB minimum gain. Nitride surface passivation and

rf mosfet ericsson

Abstract: 212-136 G200 K1206 mosfet 6 ghz PTF10035
Contextual Info: PTF 10035 30 Watts, 1.9–2.0 GHz GOLDMOS Field Effect Transistor Description • The PTF 10035 is an internally matched common source N-channel enhancement-mode lateral MOSFET intended for large signal amplifier applications from 1.9 to 2.0 GHz. It is rated at 30 watts power output.

Contextual Info: ERICSSON ^ PTE 10043* 12 Watts, 1.9-2.0 GHz LDMOS Field Effect Transistor Description The 10043 is an internally matched, common source, n-channel en­ hancement-mode lateral MOSFET intended for large signal amplifier applications in the 1.9 to 2.0 GHz range. It is rated at 12 watts minimum

capacitor siemens 4700 35

Abstract: G200 atcb
Contextual Info: PTF 10043 12 Watts, 1.9–2.0 GHz GOLDMOS Field Effect Transistor Description • • The PTF 10043 is an internally matched, common source, N-channel enhancement-mode lateral MOSFET intended for large signal amplifier applications in the 1.9 to 2.0 GHz range. It is rated at 12 watts

G200

Contextual Info: PTF 10043 12 Watts, 1.9–2.0 GHz GOLDMOS Field Effect Transistor Description The PTF 10043 is an internally matched GOLDMOS FET intended for large signal amplifier applications from 1.9 to 2.0 GHz. Rated at 12 watts, it operates at 45% efficiency with 12 dB gain. Nitride surface passivation and full gold metallization ensure excellent device

Contextual Info: PTF 10043 GOLDMOS Field Effect Transistor 12 Watts, 1.9–2.0 GHz Description The PTF 10043 is an internally matched GOLDMOS FET intended for large signal amplifier applications from 1.9 to 2.0 GHz. Rated at 12 watts, it operates at 45% efficiency with 12 dB gain. Nitride surface passivation and full gold metallization ensure excellent device

static var compensator

Abstract: HIGH VOLTAGE THYRISTOR thyristor 12000V 1500A press pack thyristor 8000 VDRM THYRISTOR H 1500 press pack thyristor high power thyristor Vdrm 6000 press pack thyristor 10000 VDRM FT1500AU-240 U240
Contextual Info: Mitsubishi Thyristor FT1500AU-240 Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 724 925-7272 Ultra High Voltage Thyristor 1500 Amperes/12000 Volts J x K (BOTH SIDES) H TYP GATE (WHITE) G TYP AUX CATHODE POTENTIAL CONNECTOR (RED) F

300 watts amplifier circuit diagram

Abstract: Eimac 152th 6hr6 centrifugal blowers 152TH vacuum tube amplifier 812 tube equivalent 700 watts power amplifier circuit diagram I52TH Scans-0017300
Contextual Info: 1 5 2 TH M E D I U M - M U TRI ODE E I T E L - M c C U L L O U G H , I nc. SAN ► BRUNO, • MODU L AT OR OSCILLATOR AMPLIFIER CALIFORNIA The Eimac I52TH is a medium-mu power triode intended for use as an amplifier, oscillator or modulator. It has a maximum plate-dissipation rating of 150 watts and a maximum plate-voltage rating

MW6IC1940NB

Abstract: A113 A114 A115 AN1977 AN1987 C101 JESD22 MW6IC1940NBR1 J735
Contextual Info: Freescale Semiconductor Technical Data Document Number: MW6IC1940N - 2 Rev. 4, 3/2009 RF LDMOS Wideband Integrated Power Amplifier The MW6IC1940NB wideband integrated circuit is designed with on - chip matching that makes it usable from 1920 to 2000 MHz. This multi - stage

A113

Abstract: A114 A115 AN1977 AN1987 C101 JESD22
Contextual Info: Freescale Semiconductor Technical Data RF LDMOS Wideband Integrated Power Amplifier The MW6IC1940GNB wideband integrated circuit is designed with on - chip matching that makes it usable from 1920 to 2000 MHz. This multi - stage structure is rated for 26 to 32 Volt operation and covers all typical cellular base

Contextual Info: Freescale Semiconductor Technical Data Document Number: MW6IC1940N Rev. 2, 12/2008 RF LDMOS Wideband Integrated Power Amplifiers The MW6IC1940NB/GNB wideband integrated circuit is designed with on - chip matching that makes it usable from 1920 to 2000 MHz. This

G200

Contextual Info: PTF 10111 6 Watts, 1.5 GHz GOLDMOS Field Effect Transistor Description The PTF 10111 is a 6 watt LDMOS FET intended for large signal amplifier applications to 1.5 GHz. It operates @ 50% efficiency and 16 dB of gain. Nitride surface passivation and full gold metallization ensure

Contextual Info: Freescale Semiconductor Technical Data Document Number: MHV5IC1810N Rev. 1, 3/2011 RF LDMOS Wideband Integrated Power Amplifier MHV5IC1810NR2 The MHV5IC1810N wideband integrated circuit is designed with on-chip matching that makes it usable from 1805 to 1990 MHz. This multi-stage

AN1955

Abstract: AN1987 MHV5IC1810NR2 J9-33 336 Z11 J1165
Contextual Info: Freescale Semiconductor Technical Data Document Number: MHV5IC1810N Rev. 1, 3/2011 RF LDMOS Wideband Integrated Power Amplifier The MHV5IC1810N wideband integrated circuit is designed with on-chip matching that makes it usable from 1805 to 1990 MHz. This multi-stage

4cx250b

Abstract: amplifier 4cx250b Eimac 4CX250B Applications 4cx250B tube Eimac 4cx250b scans-048 SK-600 DSAGER00031 eimac 7203
Contextual Info: 4CX250B/7203 Radial Beam Power Tetrode T he Svetlana 4CX250B/7203 is a compact metal/ceramic radial beam tetrode with a plate dissipa­ tion rating of'250 watts with forced-air cooling. The 4CX250B is intended for Class AB SSB linear RF amplifier service. It is

G200

Abstract: PTF10111
Contextual Info: GOLDMOS PTF 10111 Field Effect Transistor 6 Watts, 1.5 GHz Description The PTF 10111 is a 6–watt GOLDMOS FET intended for large signal amplifier applications to 1.5 GHz. It operates at 50% efficiency with 16 dB gain. Nitride surface passivation and full gold metallization

CRCW12064701FKTA

Abstract: a113 bolt MW6IC1940NB A113 A114 A115 AN1955 C101 JESD22 MW6IC1940NBR1
Contextual Info: Freescale Semiconductor Technical Data Document Number: MW6IC1940N Rev. 1, 1/2007 RF LDMOS Wideband Integrated Power Amplifiers The MW6IC1940NB/GNB wideband integrated circuit is designed with on - chip matching that makes it usable from 1920 to 2000 MHz. This

Contextual Info: Document Number: MW6IC2015N Rev. 3, 12/2008 Freescale Semiconductor Technical Data RF LDMOS Wideband Integrated Power Amplifiers MW6IC2015NBR1 MW6IC2015GNBR1 The MW6IC2015N wideband integrated circuit is designed for base station applications. It uses Freescale’s newest High Voltage 26 to 32 Volts LDMOS

3000 watts audio amplifier

Abstract: audio amplifier 2400 watt
Contextual Info: AMPEREX TRANSMITTING FORCED-AIR TUBE 891 - R ] COOLED Radio Frequency Pow er Am plifier: Class B M odulator MAXIMUM RATINGS AND TYPICAL OPERATING CONDITIONS |

PTF10111

Abstract: G200 a1r8
Contextual Info: PTF 10111 GOLDMOS Field Effect Transistor 6 Watts, 1.5 GHz Description The PTF 10111 is a 6–watt GOLDMOS FET intended for large signal amplifier applications to 1.5 GHz. It operates at 50% efficiency with 16 dB gain. Nitride surface passivation and full gold metallization

Contextual Info: GOLDMOS PTF 10111 Field Effect Transistor 6 Watts, 1.5 GHz Description The PTF 10111 is a 6–watt GOLDMOS FET intended for large signal amplifier applications to 1.5 GHz. It operates at 50% efficiency with 16 dB gain. Nitride surface passivation and full gold metallization