3RG7847-4BF
Abstract: 3RG7202-3CC00 3RG78 3RG7842 siguard 3RG7841 3zx1012 3RG7202-3BG00 Siemens Optical Sender 3rg7847-4b
Text: 4BDF-DE.book Seite 1 Montag, 7. August 2000 10:20 22 Auswertegerät 3RG7847-4B/DF mit Mutingfunktion für SIGUARD Lichtvorhänge Evaluation Unit 3RG7847-4B/DF with Muting Function for SIGUARD Light Curtains Technische Anleitung Instruction Manual Bestell-Nr./Order No. 3ZX1012-0RG78-4FA1
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3RG7847-4B/DF
3ZX1012-0RG78-4FA1
3RG7847-4B/DF.
sachge99
3RG7847-4BF
D-92220
3RG7847-4BF
3RG7202-3CC00
3RG78
3RG7842
siguard
3RG7841
3zx1012
3RG7202-3BG00
Siemens Optical Sender
3rg7847-4b
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DF2-DC24V
Abstract: DF2-L2-DC12V matsua DF2-DC12V DF2-L2-DC24V df2-dc5v DF2-DC12V Relay Matsushita DS2 Relay Matsushita DS2 m df2-dc9v Relay Matsua DS2 m
Text: DF HIGHLY SENSITIVE DIP MINIATURE RELAY 16 .630 DF-RELAYS UL File No.: E43149 CSA File No.: LR26550 9.9 .390 • Smaller than most of 2 Form C relays Header area: 80% of DS2 relay Cubic measure: 57% of DS2 relay • High sensitivity — 100 mW nominal power
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E43149
LR26550
DF2-DC24V
DF2-L2-DC12V
matsua DF2-DC12V
DF2-L2-DC24V
df2-dc5v
DF2-DC12V
Relay Matsushita DS2
Relay Matsushita DS2 m
df2-dc9v
Relay Matsua DS2 m
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IR2086S
Abstract: BAV16WDICT "FULL-BRIDGE DC BUS CONVERTER" rectifier schematic zener db3 GRM188R61C105KA93D t2a sot23 IR2086 bridge rectifier 2A IRF7380
Text: IRDC2086S-DF DEMO BOARD EVALUATION PROCEDURE International Rectifier • 233 Kansas Street, El Segundo, CA 90245 USA Overview This document describes how to connect and evaluate the supplied IRDC2086S-DF demo board. The demo board incorporates a new DC Bus Converter chipset in a fixed-frequency, open-loop isolated full-bridge DC-DC
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IRDC2086S-DF
IR2086S)
IRF7493)
IRF6603)
IRF7380)
IRF9956)
IR2086S
PQ20/16-3F3
IR2086S
BAV16WDICT
"FULL-BRIDGE DC BUS CONVERTER"
rectifier schematic
zener db3
GRM188R61C105KA93D
t2a sot23
IR2086
bridge rectifier 2A
IRF7380
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BCW88H
Abstract: BCW67CR BCW67 BCW67A BCW67AR BCW67B BCW67BR BCW67C BCW68F BCW68FR
Text: BCW67 BCW68 SOT23 PNP SILICON PLANAR MEDIUM POWER TRANSISTORS ISSUE 4- JUNE 1996 PARTMARKING DETAILS - BCW67A - DA BCW67AR - 4W BCW67B - DB BCW67BR - 5W BCW67C - DC BCW67CR - 6W BCW68F - DF BCW68FR - 7T BCW68G - DG BCW68GR - 5T BCW68H - DH BCW68HR - 7N COMPLEMENTARY
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BCW67
BCW68
BCW67A
BCW67AR
BCW67BR
BCW67C
BCW67CR
BCW68F
BCW68FR
BCW67B
BCW88H
BCW67
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df transistor
Abstract: BDT30AF BDT30BF BDT30CF BDT30DF BDT30F
Text: isc Product Specification INCHANGE Semiconductor isc Silicon PNP Power Transistors BDT30F/AF/BF/CF/DF DESCRIPTION •DC Current Gain -hFE = 40 Min @ IC= -0.4A ·Collector-Emitter Sustaining Voltage: VCEO(SUS) = -40V(Min)- BDT30F; -60V(Min)- BDT30AF -80V(Min)- BDT30BF; -100V(Min)- BDT30CF
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BDT30F/AF/BF/CF/DF
BDT30F;
BDT30AF
BDT30BF;
-100V
BDT30CF
-120V
BDT30DF
BDT29F/AF/BF/CF/DF
BDT30F
df transistor
BDT30AF
BDT30BF
BDT30CF
BDT30DF
BDT30F
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NPN Transistor VCEO 80V 100V
Abstract: BDT31F BDT31AF BDT31BF BDT31CF BDT31DF
Text: isc Product Specification INCHANGE Semiconductor isc Silicon NPN Power Transistors BDT31F/AF/BF/CF/DF DESCRIPTION •DC Current Gain -hFE = 25 Min @ IC= 1.0A ·Collector-Emitter Sustaining Voltage: VCEO(SUS) = 40V(Min)- BDT31F; 60V(Min)- BDT31AF 80V(Min)- BDT31BF; 100V(Min)- BDT31CF
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BDT31F/AF/BF/CF/DF
BDT31F;
BDT31AF
BDT31BF;
BDT31CF
BDT31DF
BDT32F/AF/BF/CF/DF
BDT31F
BDT31BF
NPN Transistor VCEO 80V 100V
BDT31F
BDT31AF
BDT31BF
BDT31CF
BDT31DF
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Untitled
Abstract: No abstract text available
Text: DF N1 01 0D -3 PMXB65UPE 12 V, P-channel Trench MOSFET 18 February 2014 Preliminary data sheet 1. General description P-channel enhancement mode Field-Effect Transistor FET in a leadless ultra small DFN1010D-3 (SOT1215) Surface-Mounted Device (SMD) plastic package using Trench
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PMXB65UPE
DFN1010D-3
OT1215)
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BCW68GR
Abstract: BCW68HR BCW68GR-5T BCW66 BCW68 BCW68F BCW68FR BCW68G BCW68H
Text: SOT23 PNP SILICON PLANAR MEDIUM POWER TRANSISTOR BCW68 ISSUE 5 - MARCH 2001 PARTMARKING DETAILS – BCW68F – BCW68G – BCW68H – DF DG DH BCW68FR – BCW68GR – BCW68HR – 7T 5T 7N E C B COMPLEMENTARY TYPES – BCW66 SOT23 ABSOLUTE MAXIMUM RATINGS. PARAMETER
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BCW68
BCW68F
BCW68G
BCW68H
BCW68FR
BCW68GR
BCW68HR
BCW66
BCW68tance
-10mA
BCW68GR
BCW68HR
BCW68GR-5T
BCW66
BCW68
BCW68F
BCW68FR
BCW68G
BCW68H
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Untitled
Abstract: No abstract text available
Text: DF N1 01 0D -3 PMXB56EN 30 V, N-channel Trench MOSFET 30 April 2014 Product data sheet 1. General description N-channel enhancement mode Field-Effect Transistor FET in a leadless ultra small DFN1010D-3 (SOT1215) Surface-Mounted Device (SMD) plastic package using Trench
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PMXB56EN
DFN1010D-3
OT1215)
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Untitled
Abstract: No abstract text available
Text: DF N1 10B -6 PMCXB900UE 20 V, complementary N/P-channel Trench MOSFET 7 October 2013 Product data sheet 1. General description Complementary N/P-channel enhancement mode Field-Effect Transistor FET in a leadless ultra small DFN1010B-6 (SOT1216) Surface-Mounted Device (SMD) plastic
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PMCXB900UE
DFN1010B-6
OT1216)
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Untitled
Abstract: No abstract text available
Text: DF N1 01 0D -3 PMXB65ENE 30 V, N-channel Trench MOSFET 13 September 2013 Product data sheet 1. General description N-channel enhancement mode Field-Effect Transistor FET in a leadless ultra small DFN1010D-3 (SOT1215) Surface-Mounted Device (SMD) plastic package using Trench
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PMXB65ENE
DFN1010D-3
OT1215)
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Untitled
Abstract: No abstract text available
Text: DF N1 01 0D -3 PMXB120EPE 30 V, P-channel Trench MOSFET 24 September 2013 Product data sheet 1. General description P-channel enhancement mode Field-Effect Transistor FET in a leadless ultra small DFN1010D-3 (SOT1215) Surface-Mounted Device (SMD) plastic package using Trench
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PMXB120EPE
DFN1010D-3
OT1215)
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Untitled
Abstract: No abstract text available
Text: DF N1 01 0D -3 PMXB40UNE 12 V, N-channel Trench MOSFET 27 September 2013 Product data sheet 1. General description N-channel enhancement mode Field-Effect Transistor FET in a leadless ultra small DFN1010D-3 (SOT1215) Surface-Mounted Device (SMD) plastic package using Trench
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PMXB40UNE
DFN1010D-3
OT1215)
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Untitled
Abstract: No abstract text available
Text: DF N1 01 0D -3 PMXB40UNE 12 V, N-channel Trench MOSFET 24 September 2013 Product data sheet 1. General description N-channel enhancement mode Field-Effect Transistor FET in a leadless ultra small DFN1010D-3 (SOT1215) Surface-Mounted Device (SMD) plastic package using Trench
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PMXB40UNE
DFN1010D-3
OT1215)
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Untitled
Abstract: No abstract text available
Text: DF N 20 20 MD -6 PMPB20EN 30 V N-channel Trench MOSFET 14 January 2014 Product data sheet 1. General description N-channel enhancement mode Field-Effect Transistor FET in a leadless medium power DFN2020MD-6 (SOT1220) Surface-Mounted Device (SMD) plastic package using
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PMPB20EN
DFN2020MD-6
OT1220)
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Untitled
Abstract: No abstract text available
Text: DF N1 01 0D -3 PMXB350UPE 20 V, P-channel Trench MOSFET 24 January 2014 Product data sheet 1. General description P-channel enhancement mode Field-Effect Transistor FET in a leadless ultra small DFN1010D-3 (SOT1215) Surface-Mounted Device (SMD) plastic package using Trench
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PMXB350UPE
DFN1010D-3
OT1215)
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Untitled
Abstract: No abstract text available
Text: DF N1 01 0D -3 PMXB360ENEA 80 V, N-channel Trench MOSFET 16 September 2013 Product data sheet 1. General description N-channel enhancement mode Field-Effect Transistor FET in a leadless ultra small DFN1010D-3 (SOT1215) Surface-Mounted Device (SMD) plastic package using Trench
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PMXB360ENEA
DFN1010D-3
OT1215)
AEC-Q101
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Untitled
Abstract: No abstract text available
Text: SIEMENS SPW11N60S5 Preliminary data Cool MOS Power Transistor • New revolutionary high voltage technology • Ultra low gate charge • Periodic avalanche proved • Extreme dv/df rated • Optimized capacitances • Improved noise immunity • Former development designation:
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SPW11N60S5
SPWx2N60S5
11N60S5
P-T0247
11N60S5
Q67040-S4239
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VPT09051
Abstract: VPT09050 SPD01N50M2 SPU01N50M2 DIODE MARKING CODE 623
Text: In fin eon SPU01N50M2 SPD01N50M2 Target data sheet technologies Cool MOS Power-Transistor • New revolutionary high voltage technology • Ultra low gate charge • Periodic avalanche rated • Extreme dv/df rated • Optimized capacitances • Improved noise immunity
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SPUx7N60S5/SPDx7N60S5
SPU01N50M2
SPD01N50M2
VPT09050
VPT09051
SPU01N50M2
P-T0251
01N50M2
Q67040-S4324
VPT09051
VPT09050
SPD01N50M2
DIODE MARKING CODE 623
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TIP626
Abstract: No abstract text available
Text: TEXAS INSTR ~b2 - COPTO} 8961726 TEXAS . ' «_•. : ' INSTR dF | ÖTblTEb D 0 3 b c]b4 ß 62C <OPTO 36964 " TIP625, TIP626, TIP627 P-N-P DARLINGTON-CONNECTED SILICON POWER TRANSISTORS REVISED OCTOBER 1984 Designed For Complementary Use With TIP620, TIP621, TIP622
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TIP625,
TIP626,
TIP627
TIP620,
TIP621,
TIP622
TIP626
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Untitled
Abstract: No abstract text available
Text: "34 MOTOROLA SC -CDIODES/OPTO} 6367255 MOTOROLA SC MICRO-T continued dF J b3t,7ES5 (DIODES/OPTO) 34C CI03a202 38202 D r - 5f- n MMT74 — NPN RF AMPLIFIER TRANSISTOR • designed for high-gain, low-noise amplifier, oscillator and mixer applications. TOP
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CI03a202
MMT74
450-MHz
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BCW67
Abstract: BCW58 BCW57 BCW57B BCW67BR BCW65 BCW66 BCW67A BCW68 BCW68HR-7N
Text: BCW67 BCW68 SOT23 PNP SILICON PLANAR MEDIUM POWER TRANSISTORS ISSUE 4 -JUNE 1996_ PARTM ARKING D ETA ILSBCW 67A- DA BC W 67B- DB BCW 67C- DC BCW 68F- DF BCW 68G - DG BCW 68H - DH BCW67AR BCW67BR BCW67CR BCW68FR BCW68GR BCW68HR -
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BCW67
BCW68
-BCW67A-
BCW67B-
BCW67C-
BCW68F-
BCW68G-
BCW68H-
BCW65
BCW58
BCW57
BCW57B
BCW67BR
BCW66
BCW67A
BCW68HR-7N
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SC08810
Abstract: No abstract text available
Text: f Z 7 SGS-THOMSON Ä 7 # M SR i[LiOT8raO@§ BCW67 BCW68 SMALL SIGNAL PNP TRANSISTORS Type Marking BCW67A DA BCW67B DB BCW67C DC BCW68F DF BCW68G DG BCW68H DH . SILICON EPITAXIAL PLANAR PNP TRANSISTORS . MINIATURE PLASTIC PACKAGE FOR APPLICATION IN SURFACE MOUNTING
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BCW67
BCW68
BCW67A
BCW67B
BCW67C
BCW68F
BCW68G
BCW68H
BCW65
BCW66
SC08810
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smd code 46n
Abstract: SPB46N03L smd diode 46A 46n03l
Text: SIEMENS SPP46N03L SPB46N03L Preliminary data SIPMOS Power Transistor • N-Channel • Enhancement mode • Avalanche rated • Logic Level • dv/df rated • 175°C operating temperature Type SPP46N03L Vfes 30 V b f lDS on @ VGS 46 A SPB46N03L 0.018 Q
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SPP46N03L
SPB46N03L
SPB46N03L
P-T0220-3-1
P-T0263-3-2
Q67040-S4147-A2
Q67040-S4743-A3
smd code 46n
smd diode 46A
46n03l
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