DF QC TRANSISTOR Search Results

DF QC TRANSISTOR Result Highlights (5)

Part	Manufacturer	Description
2SC6026MFV	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / VCEO=50 V / IC=0.15 A / hFE=120~400 / VCE(sat)=0.25 V / SOT-723
TTC5886A	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / VCEO=50 V / IC=5 A / hFE=400~1000 / VCE(sat)=0.22 V / tf=120 ns / New PW-Mold
TTA2097	Toshiba Electronic Devices & Storage Corporation	PNP Bipolar Transistor / VCEO=-50 V / IC=-5 A / hFE=200~500 / VCE(sat)=-0.27 V / tf=60 ns / New PW-Mold
TPCP8515	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / VCEO=12 V / IC=5 A / hFE=250~500 / VCE(sat)=0.14 V / tf=50 ns / PS-8
TTC021	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / VCEO=120 V / IC=3 A / hFE=120~240 / VCE(sat)=0.15 V / tf=170 ns / PW-Mini

DF QC TRANSISTOR Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
Contextual Info: N T E ELECTRONICS INC •SSE D • bMBlEST OOÜ2fl7fl 042 B N T E rE Q F F A T l TRANSISTOR TRANSISTOR LOGIC Synchronous 16-Lead DIP, See Dlag. 249 Presettable Modulo 16 Counter 4-by-4-ReglsterFlle, Open Collector Output 16-Lead DIP, See Diag. 249 DataD2	OCR Scan	16-Lead	PDF
Contextual Info: Transistors Small switching 60V, 5A 2SK2503 • F e a tu re s • E x te rn a l d im en sion s (Units: mm) 1 ) Low on-resistance. 6.5±0.2 77F521 ^SSS a '-0.1 ! / 2) H igh-speed switching. 3) W ide S O A (safe operating area). 4) Low-voltage drive (4V).	OCR Scan	2SK2503 SC-63 77F521 do--30V	PDF
AN8829 Abstract: 71BS sp600 A114M AN-8829 Contextual Info: SP600 Semiconductor Features Half Bridge 500VDC Driver • Maximum Rating The SP600 is a sm art power high voltage integrated circuit HVIC optimized to drive MOS gated power devices in half bridge topologies. It provides the necessary control and management for PWM motor drive, power supply, and UPS	OCR Scan	SP600 500VDC SP600 350ns AN8829 71BS A114M AN-8829	PDF
AN8829 Abstract: IGBT W 15 NK 90 Z Contextual Info: SP600 i f H A R R IS S E M I C O N D U C T O R July 1998 •SjgSSk PIS ^«S22- Features Maximum R atin g . V 1. 500V Ability to Interface and Drive Standard and Current Sensing N-Channel Power MOSFET/IGBT Devices Creation and Managem ent of a Floating Power Supply	OCR Scan	SP600 S22500V 500VDC SP600 1-800-4-HARRIS AN8829 IGBT W 15 NK 90 Z	PDF
150eu Contextual Info: ETN85-O5O 300a POWER TRANSISTOR MODULE • f ô f t ^ Featurés • 7 'J — 'J K rt/K Including Free Wheeling Diode • ASO ti'l a ^ v Excellent Safe Operating Area •m m Insulated Type ■ ffliÊ : A p p lic a tio n s "jT • High Power Switching • AC ^ —	OCR Scan	ETN85-O5O 12Sl-t 095t/R89 150eu	PDF
Contextual Info: SP600 £15 HARRIS U U S E M I C O N D U C T O R Half-Bridge 500VDC Driver May 1992 Features Description • Maximum R a tin g . 500V The SP600 is a smart power high voltage integrated circuit HVIC optimized to drive MOS gated power devices in half	OCR Scan	SP600 500VDC SP600 350ns AN-8829	PDF
AN8829 Abstract: A114M SP601 Contextual Info: SP601 Semiconductor Features Half Bridge 500VDC Driver • Maximum Rating The SP601 is a sm art power high voltage integrated circuit HVIC optimized to drive MOS gated power devices in half bridge topologies. It provides the necessary control and management for PWM motor drive, power supply, and UPS	OCR Scan	SP601 500VDC SP601 350ns AN8829 A114M	PDF
PPAP level submission requirement table Abstract: PPAP MANUAL for automotive industry foundry metals quality MANUALS result of 200 prize bond INCOMING MATERIAL INSPECTION checklist, PCB TSMC 90nm sram SMD a006 ISO 9001 Sony foundry INCOMING MATERIAL INSPECTION procedure INCOMING RAW MATERIAL INSPECTION procedure Contextual Info: Contents Contents i Chapter 1 Quality Management 1.1 Quality Policy 1.2 Quality Organization 1.3 ISO 9001 Year 2000 Revision 1.4 Quality Systems 1.4.1 Process Map 1.4.2 Advanced Product Quality Planning 1.4.3 Quality Assurance in the Project Approval Stage	Original		PDF
Contextual Info: SD2902 RF & MICROWAVE TRANSISTORS HF/VHF/UHF N-CHANNEL MOSFETs . . . . . . . GOLD METALLIZATION 2 - 5 0 0 MHz 15 WATTS 28 VOLTS 12.5 dB MIN. AT 400 MHz CLASS A OR AB OPERATION EXCELLENT THERMAL STABILITY DESCRIPTION The SD2902 is a gold metallized N-Channel MOS	OCR Scan	SD2902 SD2902 1010936C	PDF
secre Contextual Info: SIEMENS FEA TU R ES • • • • • MCT6 DUAL PHOTOTRANSISTOR OPTOCOUPLER Package Dimensions in Inches mm Current Transfer Ratio, 20% Minimum Two Isolated Channels Per Package Withstand Text Voltage, 7500 V Underwriters Lab File #E52744 VDE #0884 Available with Option 1	OCR Scan	E52744 secre	PDF
51C69 Abstract: 51C68-35L 51C68 2148H 10 35L 51C68-30 51C68-35 290091 Contextual Info: 51C68 HIGH SPEED CHMOS 4096 x 4-BIT STATIC RAM 51C68-30 51C68-35 51C68-35L Max. Access Time ns 30 35 35 Max. Active Current (mA) 90 90 65 Max. Standby Current (mA) 10 10 5 Double Metal CHMOS III Technology High Density 20-Pin Package Completely Static Memory-No Clock	OCR Scan	51C68 51C68-30 51C68-35 51C68-35L 20-Pin 2148H 51C68 384-bit 51C69 51C68-35L 10 35L 290091	PDF
IL223 Abstract: IL221 IL222 RS481A Contextual Info: SIEMENS IL221/222/223 PHOTODARLINGTON SMALL OUTLINE SURFACE MOUNT OPTOCOUPLER FEATURES Package Dimensions in Inches mm • High Current Transfer Ratio*, lF=1 mA, IL221,100% Minimum 11232 200% Minimum IL223,500% Minimum • Withstand Test Voltage, 2500 VRMS	OCR Scan	IL221/222/223 IL221 IL223 RS481A) E52744 IL221/222/223 fl53b3Bb IL222 RS481A	PDF
37044 Abstract: TIPL757 Contextual Info: TEXAS INSTR ÌOPTO> b2 DF\|ùTt.l75t. 0037043 2 8961726 TEXAS INSTR OPTO 62C 37043 TIPL757, TIPL757A N-P-N SILICON POWER TRANSISTORS REV ISED O CTOBER 1984 T - 33-/5“ 20 0 W a t 2 5 ° C C ase Temperature 15 A Continuous Collector Current 25 A Peak Collector Current	OCR Scan	TIPL757, TIPL757A TIPL757 TIPL757A 37044 TIPL757	PDF
UFN153 Abstract: UFN150 Contextual Info: T2 UNITRODE CORP 9347963 UNITRODE CORP GQIQblfl 0 92D 10618 ^ T -^ -d POWER MOSFET TRANSISTORS UFN150 UFN152 UFN153 100 Volt, 0.055 Ohm N-Channel FEATURES • Fast Switching • Low Drive Current • Ease of Paralleling • No Second Breakdown • Excellent Temperature Stability	OCR Scan	UFN150 UFN152 UFN153 10b23 UFN151 UFN150 UFN153	PDF

circuit diagram of 600 volt UPS Abstract: SP607 back UPS pro 1000 G2U TR Contextual Info: SP607 i f H A R R IS S E M I C O N D U C T O R Features Half Bridge 500VDC Driver • Maximum Rating The SP601 is a sm art power high voltage integrated circuit HVIC) optimized to drive MOS gated power devices in half bridge topologies. It provides the necessary control and	OCR Scan	SP607 500VDC SP601 1-800-4-HARRIS circuit diagram of 600 volt UPS SP607 back UPS pro 1000 G2U TR	PDF
elec-trol reed relay Abstract: ATQ203 RA30451051 DF2E-DC12V elec-trol RA30461051 RA30421241 RA30441051 ATQ203 relay data sheet 2sd 4242 ra30421051 Contextual Info: Section Reference Index Connectors, Cable Assemblies, IC Sockets. . . . . . . . . . . . . . . . 12-132 Semiconductors, ICs, Transistors, Diodes, Rectifiers . . . 133-239 3.6 EC SI Crystals, Oscillators . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 240-253	Original		PDF
DIODE IN 4002 424 Abstract: transistor 2sk c954 2SK2541 TI 945 nec 501 t Transistor DF- RO Contextual Info: =t — • 5 > 2 / - h MOS Field Effect Transistor 2SK2541 n ^ - v t ^ u m o s ¡ ü iâ x - 'f > y ^ < f e t 7 ' m 2SK 2541IÌ 1.5 V l E t t ^ 'f 7 “<7 N 51 + ^^iÉ M O S FET?'<feU, f£ 1 Œ ?'![»)?' t , '0 K 7 ' f 7 f S ? f l t 3 s' ^ o jg h 7 > v	OCR Scan	2SK2541 2SK2541 DIODE IN 4002 424 transistor 2sk c954 TI 945 nec 501 t Transistor DF- RO	PDF
2SK2463 Contextual Info: Transistors Small switching 60V, 2A 2SK2463 •F e a tu re s 1) E x te rn a l d im e n s io n s (U nits: m m ) L o w o n -re sista n ce . 2) H ig h -s p e e d s w itc h in g . 3) W id e S O A (safe o p e ra tin g area). 4) L o w -v o lta g e d riv e (4V).	OCR Scan	2SK2463 O-220, 0Dlb713 O-220FN O220FP T0-220FP, O-220FP. 7020c 2SK2463	PDF
Contextual Info: Transistors Small switching 60V, 5A 2SK2503 •F e a tu re s External dimensions (Units: mm) 1) Low on-resistance. 2) High-speed switching. 2 3 + 0 .2 3) Wide SOA (safe operating area). 0 .5 ± 0 .1 4) Low-voltage drive (4V). 5) Easily designed drive circuits.	OCR Scan	2SK2503 SC-63 0Dlb713 O-220FN O-220FN O220FP T0-220FP, O-220FP.	PDF
DBK-H50 Contextual Info: C irN A v W I' ICorporation* A iA SEMICONDUCTOR PRODUCT SIGNAL PROCESSING EXCELLENCE QUALITY AND RELIABILITY ASSURANCE PROGRAM INTRODUCTION Sipex Corporation recognizes that the quality and reliability of our products are of primary importance to our customers. Sipex’s Quality	OCR Scan	f27August IL-I-38535, DBK-H50	PDF
1000w 60hz power supply schematic Abstract: SORENSEN Contextual Info: •v#« - S f * ? •« PO\ PA30 A P E X M IC R O T E C H N O L O G Y C O R P O R A T IO N • A P P L IC A T IO N S H O T L IN E 8 0 0 5 4 6 -A P E X 8 0 0 -5 4 6 -2 7 3 9 FEATURES • • • • • • • OUTPUT POWER 2000W CONT, 8000W PULSE NO SECOND BREAKDOWN, MOSFET OUTPUT	OCR Scan		PDF
tsmc cmos 0.13 um sram Abstract: TSMC 90nm sram ford ppap EMMI microscope TSMC 0.13um process specification PPAP MANUAL for automotive industry Kyocera mold compound semiconductors cross index ISO 9001 Sony foundry metals quality MANUALS Contextual Info: Integrated Silicon Solution Inc 2012 Q Quality y and Reliability Manual Contents Content Page Chapter 1 Quality Management 1.1 Quality Policy 1.2 Quality Organization 1.3 ISO 9001 Year 2008 Revision 1.4 Quality Systems 1.4.1 Process Map 1.4.2 Advanced Product Quality Planning	Original		PDF
D3N02 Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA D esigner’s Data Sheet M M DF3N02HD Medium Power Surface Mount Products M otorola Preferred D « vic * TMOS Dual N-Channel Field Effect Transistors DUAL TMOS POWER MOSFET 3.0 AMPERES 20 VOLTS RDS on = 0.090 OHM MiniMOS™ devices are an advanced series of power MOSFETs	OCR Scan	DF3N02HD DF3N02H D3N02	PDF
of mosfet BUZ 384 Abstract: simple SL 100 NPN Transistor leistungstransistoren ANALOG DEVICES bar code on the lable test transistors Siemens Dioden fgs npn Contextual Info: SIEMENS Technische Angaben Technical Information 1 Übersicht 1 Overview 1.1 SIPMOS-Leistungstransistoren 1.1 SIPMOS Power Transistors Leistungstransistoren im Bereich 5 0 V . 1000 V und 10 m fi . 8 Q Power transistors in the 50 V to 1000 V and 10 mQ to 8 Q range	OCR Scan	SIL00001 SIL00002 MILSTD-883, of mosfet BUZ 384 simple SL 100 NPN Transistor leistungstransistoren ANALOG DEVICES bar code on the lable test transistors Siemens Dioden fgs npn	PDF

DF QC TRANSISTOR Search Results

DF QC TRANSISTOR Result Highlights (5)

DF QC TRANSISTOR Datasheets Context Search

AN8829

AN8829

150eu

AN8829

PPAP level submission requirement table

secre

51C69

IL223

37044

UFN153

circuit diagram of 600 volt UPS

elec-trol reed relay

DIODE IN 4002 424

2SK2463

DBK-H50

1000w 60hz power supply schematic

tsmc cmos 0.13 um sram

D3N02

of mosfet BUZ 384