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    DEVICE MARKING Y4 Search Results

    DEVICE MARKING Y4 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TPD4164F Toshiba Electronic Devices & Storage Corporation Intelligent power device / VBB=600V / Iout=2A/ Surface mount type / HSSOP31 Visit Toshiba Electronic Devices & Storage Corporation
    TPD4207F Toshiba Electronic Devices & Storage Corporation Intelligent power device 600V (High voltage PWM DC brushless motor driver) Visit Toshiba Electronic Devices & Storage Corporation
    TPD4204F Toshiba Electronic Devices & Storage Corporation Intelligent power device 600V (High voltage PWM DC brushless motor driver) Visit Toshiba Electronic Devices & Storage Corporation
    TPD4164K Toshiba Electronic Devices & Storage Corporation Intelligent power device / VBB=600V / Iout=2A/ Through hole type / HDIP30 Visit Toshiba Electronic Devices & Storage Corporation
    TPD4163K Toshiba Electronic Devices & Storage Corporation Intelligent power device / VBB=600V / Iout=1A/ Through hole type / HDIP30 Visit Toshiba Electronic Devices & Storage Corporation

    DEVICE MARKING Y4 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    marking Y4

    Abstract: KRC837U
    Text: SEMICONDUCTOR KRC837U MARKING SPECIFICATION US6 PACKAGE 1. Marking method Laser Marking Y4 1 3 No. 0 1 2. Marking 2 Item Marking Description Device Mark Y4 KRC837U hFE Grade - - * Lot No. 01 2006. 1st Week [0:1st Character, 1:2nd Character] Pin No. Dot Pin 1 Index.


    Original     		PDF KRC837U marking Y4 KRC837U

    marking Y4

    Abstract: KRC837E
    Text: SEMICONDUCTOR KRC837E MARKING SPECIFICATION TES6 PACKAGE 1. Marking method Laser Marking Y4 1 3 No. 0 1 2. Marking 2 Item Marking Description Device Mark Y4 KRC837E hFE Grade - - * Lot No. 01 2006. 1st Week [0:1st Character, 1:2nd Character] Pin No. Dot Pin 1 Index.


    Original     		PDF KRC837E marking Y4 KRC837E

    transistor Y4

    Abstract: marking 004 Supersot 6 complementary npn-pnp marking Y4 FMB1020 150MA80
    Text: FMB1020 Package: SuperSOT-6 Device Marking: .004 Note: The " . " dot signifies Pin 1 Transistor 1 is NPN device, transistor 2 is PNP device. NPN & PNP Complementary Dual Transistor SuperSOT-6 Surface Mount Package This dual complementary device was designed for use as a general purpose amplifier applications at


    Original     		PDF FMB1020 300mA. 100uA 100mA 150mA 200mA, 100MHz 100uA, fmb1020 transistor Y4 marking 004 Supersot 6 complementary npn-pnp marking Y4 150MA80

    HCT08AG

    Abstract: MC74HCT08A MC74HCT08AN LS08 MC74HCT08ADR2G
    Text: MC74HCT08A Quad 2-Input AND Gate with LSTTL Compatible Inputs High−Performance Silicon−Gate CMOS http://onsemi.com The MC74HCT08A is identical in pinout to the LS08. The device inputs are compatible with Standard CMOS or LSTTL outputs. MARKING DIAGRAMS


    Original     		PDF MC74HCT08A MC74HCT08A PDIP-14 MC74HCT08AN SOIC-14 MC74HCT08A/D HCT08AG MC74HCT08AN LS08 MC74HCT08ADR2G

    HCT32AG

    Abstract: LS32 MC74HCT32A MC74HCT32AN 74HCT32A
    Text: MC74HCT32A Quad 2-Input OR Gate with LSTTL Compatible Inputs High−Performance Silicon−Gate CMOS The MC74HCT32A is identical in pinout to the LS32. The device inputs are compatible with Standard CMOS or LSTTL outputs. http://onsemi.com MARKING DIAGRAMS


    Original     		PDF MC74HCT32A MC74HCT32A SOIC-14 751Aws MC74HCT32A/D HCT32AG LS32 MC74HCT32AN 74HCT32A

    HCT08AG

    Abstract: No abstract text available
    Text: MC74HCT08A Quad 2-Input AND Gate with LSTTL Compatible Inputs High−Performance Silicon−Gate CMOS http://onsemi.com The MC74HCT08A is identical in pinout to the LS08. The device inputs are compatible with Standard CMOS or LSTTL outputs. MARKING DIAGRAMS


    Original     		PDF MC74HCT08A MC74HCT08A MC74HCT08A/D HCT08AG

    Untitled

    Abstract: No abstract text available
    Text: MC74HCT32A Quad 2-Input OR Gate with LSTTL Compatible Inputs High−Performance Silicon−Gate CMOS The MC74HCT32A is identical in pinout to the LS32. The device inputs are compatible with Standard CMOS or LSTTL outputs. http://onsemi.com MARKING DIAGRAMS


    Original     		PDF MC74HCT32A MC74HCT32A MC74HCT32A/D

    HCT08AG

    Abstract: No abstract text available
    Text: MC74HCT08A Quad 2-Input AND Gate with LSTTL Compatible Inputs High−Performance Silicon−Gate CMOS http://onsemi.com The MC74HCT08A is identical in pinout to the LS08. The device inputs are compatible with Standard CMOS or LSTTL outputs. MARKING DIAGRAMS


    Original     		PDF MC74HCT08A MC74HCT08A MC74HCT08AN MC74HCT08A/D HCT08AG

    Untitled

    Abstract: No abstract text available
    Text: 74HCT32 Quad 2−Input OR Gate with LSTTL−Compatible Inputs High−Performance Silicon−Gate CMOS The 74HCT32 is identical in pinout to the LS32. The device has TTL−compatible inputs. http://onsemi.com MARKING DIAGRAMS Features • • • • • •


    Original     		PDF 74HCT32 74HCT32 74HCT32/D

    HC86G

    Abstract: 74HC86 HC-86 HC86 74HC86DR2G 74HC86DTR2G LS86
    Text: 74HC86 Quad 2−Input Exclusive OR Gate High−Performance Silicon−Gate CMOS The 74HC86 is identical in pinout to the LS86. The device inputs are compatible with standard CMOS outputs; with pullup resistors, they are compatible with LSTTL outputs. MARKING


    Original     		PDF 74HC86 74HC86 SOIC-14 HC86G HC-86 HC86 74HC86DR2G 74HC86DTR2G LS86

    sot23 marking y5

    Abstract: BZX84C18 FMMD914 FMMD6050 BZX84-C27 BAR99 MARKING W4 sot 23 C3V9 C5V1 c5v6
    Text: SOT-23 TRANSISTORS & DIODES PRODUCT LIST AND DEVICE IDENTIFICATION DIODES DIODES Device Type Device Type Device marking Device marking BAL99 E2 BZX84-C43 X6 BAR99 E3 BZX84-C47 X7 BAS16 A3 FMMD914 5D BAV70 A4 FMMD6050 5A BAV74 JA BAV99 A7 BAW56 A1 HD2A 5D HD3A


    OCR Scan     		PDF OT-23 BAL99 BZX84-C43 BAR99 BZX84-C47 BAS16 FMMD914 BAV70 FMMD6050 BAV74 sot23 marking y5 BZX84C18 FMMD914 FMMD6050 BZX84-C27 BAR99 MARKING W4 sot 23 C3V9 C5V1 c5v6

    Untitled

    Abstract: No abstract text available
    Text: SEMICONDUCTOR t m FMB1020 Package: SuperSOT-6 Device Marking: .004 Note: The " . " dot signifies Pin 1 Transistor 1 is NPN device, transistor 2 is PNP device. NPN & PNP Complementary Dual Transistor SuperSOT-6 Surface Mount Package This dual complementary device was designed for use as a general purpose amplifier applications at


    OCR Scan     		PDF FMB1020 300mA. 10OuA 100mA 150mA 200mA, 100MHz 10OuA, fmb1020

    BC107 equivalent transistors

    Abstract: BC140 equivalent BCY71 BS 2N3053 equivalent marking 1801 2N929 2N930 BAW63 BAW63A BFS36
    Text: MICRO-E MICRO-E PRODUCT LIST Where approval for military use has been obtained the appropriate British Standards number is indicated under B.S. number. Diodes Transistors Type Device marking Nearest metal can or IE-line equivalent B.S. number* Page Type Device


    OCR Scan     		PDF BFS36 2N930 BS9365 BAW63 BS9302 BFS36A 2N929 BAW63A BC107 equivalent transistors BC140 equivalent BCY71 BS 2N3053 equivalent marking 1801

    BC140 equivalent

    Abstract: 2n4036 equivalent BAW66 Bc161 marking 2N929 2N930 BAW63 BAW63A BFS36 BFS36A
    Text: MICRO-E MICRO-E PRODUCT LIST Where approval for military use has been obtained the appropriate British Standards number is indicated under B.S. number. Diodes Transistors Type Device marking Nearest metal can or IE-line equivalent B.S. number* Page Type Device


    OCR Scan     		PDF BFS36 2N930 BS9365 BAW63 BS9302 BFS36A 2N929 BAW63A BC140 equivalent 2n4036 equivalent BAW66 Bc161 marking

    BFY52 equivalent

    Abstract: ic marking z7 marking C1s 2N2222 2N2475 2N2938 f025 2N929 2N2369 equivalent BAW63
    Text: MICRO-E MICRO-E PRODUCT LIST Where approval for military use has been obtained the appropriate British Standards number is indicated under B.S. number. Diodes Transistors Type Device marking Nearest metal can or IE-line equivalent B.S. num ber* Page Type Device


    OCR Scan     		PDF BFS36 2N930 BS9365 BAW63 BS9302 BFS36A 2N929 BAW63A BFY52 equivalent ic marking z7 marking C1s 2N2222 2N2475 2N2938 f025 2N2369 equivalent

    Marking 3D TO-236AB

    Abstract: T3D 87 pro-electron T3D zener ZENER A12 T3D 91 t3d 96 T3D 77
    Text: SPRAGUE/SENICOND 8514019 GROUP TBD SPRAG UE. D • SS13Û5D □003t.3D S E M IC O N D S / IC S 93D 5 03630 T ^ { \ r ^ f O SMALL-OUTLINE D IO D ES Pro-Electron Device Types ELECTRICAL CHARACTERISTICS at TA = 25°C vf Device Type Description Marking BAR18 Schottky


    OCR Scan     		PDF BAR18 BAS16 BAS19 BAS21 BAV701 238BMM 23881N Marking 3D TO-236AB T3D 87 pro-electron T3D zener ZENER A12 T3D 91 t3d 96 T3D 77

    BC239C equivalent

    Abstract: BC550C equivalent bc237a equivalent bc238b equivalent BC548C equivalent bc238a equivalent bc108b equivalent bc549c equivalent bc183 equivalent BC237B equivalent
    Text: MICRO-E MICRO-E PRODUCT LIST Where approval for military use has been obtained the appropriate British Standards number is indicated under B.S. number. Diodes Transistors Type Device marking BFS36 BFS36A BFS37 L1 L2 L3 BFS37A BFS38 BFS38A BFS39 BFS40 BFS40A


    OCR Scan     		PDF BFS36 2N930 BS9365 BAW63 BS9302 BFS36A 2N929 BAW63A BC239C equivalent BC550C equivalent bc237a equivalent bc238b equivalent BC548C equivalent bc238a equivalent bc108b equivalent bc549c equivalent bc183 equivalent BC237B equivalent

    bcy79 equivalent

    Abstract: 2N3053 equivalent 2N929 bcy78 equivalent 2N2905a equivalent f025 2N930 BAW63 BAW63A BFS36A
    Text: MICRO-E MICRO-E PRODUCT LIST Where approval for military use has been obtained the appropriate British Standards number is indicated under B.S. number. Diodes Transistors Type Device marking BFS36 BFS36A BFS37 L1 L2 L3 BFS37A BFS38 BFS38A BFS39 BFS40 BFS40A


    OCR Scan     		PDF BFS36 2N930 BS9365 BAW63 BS9302 BFS36A 2N929 BAW63A bcy79 equivalent 2N3053 equivalent bcy78 equivalent 2N2905a equivalent f025

    2N4427 equivalent

    Abstract: ZT Ferranti 2N2369 equivalent 2N2708 BZX88-C4V3 diode BAW67 f025 ic marking z7 J 2N2369 marking G5
    Text: MICRO-E MICRO-E PRODUCT LIST Where approval for military use has been obtained the appropriate British Standards number is indicated under B.S. number. Diodes Transistors Type Device marking BFS36 BFS36A BFS37 L1 L2 L3 BFS37A BFS38 BFS38A BFS39 BFS40 BFS40A


    OCR Scan     		PDF BFS36 2N930 BS9365 BAW63 BS9302 BFS36A 2N929 BAW63A 2N4427 equivalent ZT Ferranti 2N2369 equivalent 2N2708 BZX88-C4V3 diode BAW67 f025 ic marking z7 J 2N2369 marking G5

    BC140 equivalent

    Abstract: 2N4427 equivalent 2n4036 equivalent 2N2270 equivalent 2N3866 equivalent 2N929 2N930 BAW63 BAW63A BFS36
    Text: MICRO-E MICRO-E PRODUCT LIST Where approval for military use has been obtained the appropriate British Standards number is indicated under B.S. number. Diodes Transistors Type Device marking Nearest metal can or IE-line equivalent B .S . number* Page Type


    OCR Scan     		PDF BFS36 2N930 BS9365 BAW63 BS9302 BFS36A 2N929 BAW63A BC140 equivalent 2N4427 equivalent 2n4036 equivalent 2N2270 equivalent 2N3866 equivalent

    bc109 Transistor Equivalent list

    Abstract: npn transistor w6 2N2484 equivalent transistors transistor equivalent table bc109 transistor BC109 ZTX341 f021 2N930 BAW63 BFS36
    Text: MICRO-E MICRO-E PRODUCT LIST Where approval for military use has been obtained the appropriate British Standards number is indicated under B.S. number. Diodes Transistors Type Device marking BFS36 BFS36A BFS37 L1 L2 L3 BFS37A BFS38 BFS38A BFS39 BFS40 BFS40A


    OCR Scan     		PDF BFS36 2N930 BS9365 BAW63 BS9302 BFS36A 2N929 BAW63A bc109 Transistor Equivalent list npn transistor w6 2N2484 equivalent transistors transistor equivalent table bc109 transistor BC109 ZTX341 f021

    BC140 equivalent

    Abstract: 2N3053 equivalent 2n4036 equivalent equivalent to BC177 2N929 2N930 BAW63 BAW63A BFS36 BFS36A
    Text: MICRO-E MICRO-E PRODUCT LIST Where approval for military use has been obtained the appropriate British Standards number is indicated under B.S. number. Diodes Transistors Type Device marking BFS36 BFS36A BFS37 L1 L2 L3 BFS37A BFS38 BFS38A BFS39 BFS40 BFS40A


    OCR Scan     		PDF BFS36 2N930 BS9365 BAW63 BS9302 BFS36A 2N929 BAW63A BC140 equivalent 2N3053 equivalent 2n4036 equivalent equivalent to BC177

    BSS56

    Abstract: f025 ic marking z7 2N929 2N930 BAW63 BAW63A BFS36 BFS36A BS9302
    Text: MICRO-E MICRO-E PRODUCT LIST Where approval for military use has been obtained the appropriate British Standards number is indicated under B.S. number. Diodes Transistors Type Device marking BFS36 BFS36A BFS37 L1 L2 L3 BFS37A BFS38 BFS38A BFS39 BFS40 BFS40A


    OCR Scan     		PDF BFS36 2N930 BS9365 BAW63 BS9302 BFS36A 2N929 BAW63A BSS56 f025 ic marking z7

    2N2475

    Abstract: 2N2907 equivalent 2N2369 equivalent f025 ic marking z7 2N929 2N930 BAW63 2N2369 FERRANTI BFS36
    Text: MICRO-E MICRO-E PRODUCT LIST Where approval for military use has been obtained the appropriate British Standards number is indicated under B.S. number. Diodes Transistors Type Device marking Nearest metal can or IE-line equivalent B .S . number* Page Type


    OCR Scan     		PDF BFS36 2N930 BS9365 BAW63 BS9302 BFS36A 2N929 BAW63A 2N2475 2N2907 equivalent 2N2369 equivalent f025 ic marking z7 2N2369 FERRANTI