DEVICE MARKING CODE GA Search Results
DEVICE MARKING CODE GA Result Highlights (5)
Part | ECAD Model | Manufacturer | Description | Download | Buy |
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BLM15PX181BH1D | Murata Manufacturing Co Ltd | FB SMD 0402inch 180ohm POWRTRN |
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BLM15PX221SH1D | Murata Manufacturing Co Ltd | FB SMD 0402inch 220ohm POWRTRN |
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BLM21HE601SH1L | Murata Manufacturing Co Ltd | FB SMD 0805inch 600ohm POWRTRN |
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DLW21SH670HQ2L | Murata Manufacturing Co Ltd | CMC SMD 67ohm 320mA POWRTRN |
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BLM15PX800BH1D | Murata Manufacturing Co Ltd | FB SMD 0402inch 80ohm POWRTRN |
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DEVICE MARKING CODE GA Datasheets Context Search
Catalog Datasheet | Type | Document Tags | |
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marking codes fairchild
Abstract: HEP08 fairchild marking codes sot-23 TOREX TOP CODE AND8004 t324 SOT-353 A7 marking L5 sot363 xaa643 and8004 D
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AND8004/D r14525 marking codes fairchild HEP08 fairchild marking codes sot-23 TOREX TOP CODE AND8004 t324 SOT-353 A7 marking L5 sot363 xaa643 and8004 D | |
marking codes fairchild
Abstract: SOT-363 a7 wz 74 marking SOT-363 MARKING WF marking 324 tssop 16 vk sot-363 On Semiconductor Logic Data Code and Traceability marking code cp SOT-363 A1 marking codes ON TSOP6 MARKING 6L
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AND8004/D 14xxx r14525 AND8004/D marking codes fairchild SOT-363 a7 wz 74 marking SOT-363 MARKING WF marking 324 tssop 16 vk sot-363 On Semiconductor Logic Data Code and Traceability marking code cp SOT-363 A1 marking codes ON TSOP6 MARKING 6L | |
Y1416
Abstract: vk sot-363 LCX00 AND8004 MC74HC04ADR2 ASE CHUNGLI date code marking "marking Code" V2 MX marking code sot23 marking a6 sot363
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AND8004/D 14xxx Y1416 vk sot-363 LCX00 AND8004 MC74HC04ADR2 ASE CHUNGLI date code marking "marking Code" V2 MX marking code sot23 marking a6 sot363 | |
kvt22
Abstract: KVL11 KPT23 ON Semiconductor marking k1648 KLT20 HEL16 KEL32 KEL01 xaa9646
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AND8002/D 12MON00232D r14525 kvt22 KVL11 KPT23 ON Semiconductor marking k1648 KLT20 HEL16 KEL32 KEL01 xaa9646 | |
2N55551
Abstract: 2N5551 2N5550 2N5550RLRA 2N5550RLRP 2N5550RLRPG 2N5551G 2N5551RL1 2N5551RLRA 2N5551RLRM
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2N5550, 2N5551 2N5550 2N5550/D 2N55551 2N5551 2N5550RLRA 2N5550RLRP 2N5550RLRPG 2N5551G 2N5551RL1 2N5551RLRA 2N5551RLRM | |
2n5551
Abstract: 2N55551 2N5551 circuit 2n5550
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2N5550, 2N5551 2N5550 2N5551 2N55551 2N5551 circuit | |
2SC2012Contextual Info: SC201 0.5A ( 200V to 800V / 0.5A ) Outline drawings, mm FAST RECOVERY DIODE 3±0.2 0.1 2.6±0.2 2.5±0.2 Marking 1.35±0.4 2 MIN. 1.35±0.4 1.2±0.2 +0.4 5.1-0.1 Features Surface mount device High voltage by mesa design Marking High reliability Code GA Applications |
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SC201 SC201-2 SC201-4 SC201-6 SC201-8 SC201 15x15mm 2SC2012 | |
marking code GC diode
Abstract: SC201 SC201-2 SC201-4 SC201-6 SC201-8 diode marking Gc marking CODE GA
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SC201 SC201-2 SC201-4 SC201-6 SC201 15x15mm marking code GC diode SC201-2 SC201-4 SC201-6 SC201-8 diode marking Gc marking CODE GA | |
4060BEContextual Info: SC201 0.5A ( 200V to 800V / 0.5A ) Outline drawings, mm FAST RECOVERY DIODE 3±0.2 0.1 2.6±0.2 2.5±0.2 Marking 1.35±0.4 2 MIN. 1.35±0.4 1.2±0.2 +0.4 5.1-0.1 Features Surface mount device High voltage by mesa design Marking High reliability Code GA Applications |
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SC201 200de SC201 15x15mm 4060BE | |
2N6426G
Abstract: 2N6427 2N6426 2N6426RLRA 2N6427RLRA 2N6427RLRAG 2n64
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2N6426* 2N6427 2N6426, 2N6426/D 2N6426G 2N6427 2N6426 2N6426RLRA 2N6427RLRA 2N6427RLRAG 2n64 | |
2N6426Contextual Info: 2N6426*, 2N6427 Preferred Device Darlington Transistors NPN Silicon Features • Pb−Free Packages are Available* • Device Marking: Device Type, e.g., 2N6426, Date Code http://onsemi.com COLLECTOR 3 BASE 2 MAXIMUM RATINGS Rating Symbol Value Unit Collector − Emitter Voltage |
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2N6426* 2N6427 2N6426, 2N6426 2N6426G 2N6426RLRA 2N6427 2N6427RLRA 2N6427RLRAG BRD8011/D. | |
M3-12H
Abstract: fujitsu gaas marking code fujitsu gaas mm catalog CAPACITOR JL 1500 SJPL 4012K 1994C
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OCR Scan |
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77V1254Contextual Info: 77V1254L25 Device Errata Notes Supplemental Information The revision of the 77V1254L25 can be determined visually from the date code shown on the top marking. The date code is the third line of text. ∫ dt 77V1254 L25PG DZyywwA Date Code “yyww_” indicates Year, Week & Assembly location |
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77V1254L25 77V1254L25 77V1254 L25PG 77V1254 | |
77V1254
Abstract: 77V1254L25
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77V1254L25 77V1254L25 77V1254 L25PG 77V1254 | |
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77V1253
Abstract: 77V1254
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77V1253L25 77V1253L25 77V1253 77V1254 L25PG 77V1253 77V1254 | |
Contextual Info: 77V1054L25 Device Errata Notes Supplemental Information The revision of the 77V1054L25 can be determined visually from the date code shown on the top marking. The date code is the third line of text. ∫ dt 77V1054 77V1254 L25PG DZyywwA Date Code “yyww_” indicates Year, Week & Assembly location |
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77V1054L25 77V1054 77V1254 L25PG | |
Contextual Info: SIEMENS CGY 93P GaAs MMIC Preliminary Data • • • Power amplifier for GSM application 2 stage amplifier Overall power added efficiency 55% ESD: Electrostatic discharge sensitive device, observe handling precautions! Type Marking Ordering code taped |
OCR Scan |
Q62702G72 | |
Contextual Info: SIEMENS CGY93P GaAs MMIC Preliminary Data • • • Power amplifier for GSM application 2 stage amplifier Overall power added efficiency 55% ESD: Electrostatic discharge sensitive device, observe handling precautions! Type Marking Ordering code taped Package |
OCR Scan |
CGY93P Q62702G72 | |
sot marking code ZS
Abstract: Transistor BFR MARKING CODE R7 RF TRANSISTOR sot-23 npn marking code VD BFR106 Transistor BFR 30 sot-23 M
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OCR Scan |
OT-23 sot marking code ZS Transistor BFR MARKING CODE R7 RF TRANSISTOR sot-23 npn marking code VD BFR106 Transistor BFR 30 sot-23 M | |
Contextual Info: 77V1053L25 Device Errata Notes Supplemental Information The revision of the 77V1053L25 can be determined visually from the date code shown on the top marking. The date code is the third line of text. ∫ dt 77V1053 77V1254 L25PG DZyywwA Date Code “yyww_” indicates Year, Week & Assembly location |
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77V1053L25 77V1053 77V1254 L25PG | |
GaAs FET cfy 14Contextual Info: SIEMENS CFY 35 GaAs FET Datasheet * Low noise * High gain * For iow-noise front end amplifiers * For DBS down converters ESO: Electrostatic discharge sensitive device, observe handling precautions! Type Marking Ordering code tape and reel Pin Configuration |
OCR Scan |
Q62702-F1393 Q62702-F1394 GaAs FET cfy 14 | |
Contextual Info: SIEMENS BF 2040W Silicon N-Channei MOSFET Tetrode Preliminary data • For low noise, high gain controlled input stages up to 1GHz • Operating voltage 5V ESD: Electrostatic discharge sensitive device, observe handling precaution Type Marking Ordering Code |
OCR Scan |
Q62702-F1776 OT-343 | |
BF1009
Abstract: 1009 Q62702-F1613
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Q62702-F1613 OT-143 Jul-29-1996 BF1009 1009 Q62702-F1613 | |
smd MARKING CODE G72Contextual Info: GaAs MMIC CGY 93P Data Sheet • • • Power amplifier for GSM application 2 stage amplifier Overall power added efficiency 55% MW-16 ESD: Electrostatic discharge sensitive device, observe handling precautions! Type Marking Ordering Code taped Package |
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MW-16 Q62702-G72 GPW05969 smd MARKING CODE G72 |