marking code INFINEON
Abstract: BBY53 M 21 marking code diode BAR63-02V BBY53-02L BBY53-02V BBY53-02W BBY53-03LRH BBY53-03W BBY53-05W
Text: BBY53. Silicon Tuning Diode • High Q hyperabrupt tuning diode • Designed for low tuning voltage operation for VCO's in mobile communications equipment • High ratio at low reverse voltage BBY53-02L BBY53-02V BBY53-02W BBY53-03W BBY53-03LRH BBY53 BBY53-05W
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Original
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BBY53.
BBY53-02L
BBY53-02V
BBY53-02W
BBY53-03W
BBY53-03LRH
BBY53
BBY53-05W
marking code INFINEON
BBY53
M 21 marking code diode
BAR63-02V
BBY53-02L
BBY53-02V
BBY53-02W
BBY53-03LRH
BBY53-03W
BBY53-05W
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E6433
Abstract: MARKING CODE 213 marking code 62 3 pin diode diode marking code 58
Text: BBY53. Silicon Tuning Diode • High Q hyperabrupt tuning diode • Designed for low tuning voltage operation for VCO's in mobile communications equipment • High ratio at low reverse voltage BBY53-02L BBY53-02V BBY53-02W BBY53-03W BBY53-03LRH BBY53 BBY53-05W
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Original
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BBY53.
BBY53-02L
BBY53-02V
BBY53-02W
BBY53-03W
BBY53-03LRH
BBY53
BBY53-05W
E6433
MARKING CODE 213
marking code 62 3 pin diode
diode marking code 58
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BFR193L3
Abstract: ESD8V0L2B-03L IEC61000-4-4 INFINEON marking MARKING B3 dual diode
Text: ESD8V0L. Dual Channel TVS Diode • ESD / transient protection for data and power lines to IEC61000-4-2 ESD : ± 15 KV (contact) IEC61000-4-4 (EFT): 40 A (5/50 ns) • Working voltage: -8 / +14 V • Low capacitance • Low reverse current ESD8V0L2B-03L
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IEC61000-4-2
IEC61000-4-4
ESD8V0L2B-03L
ESD8V0L2B-03L*
BFR193L3
ESD8V0L2B-03L
IEC61000-4-4
INFINEON marking
MARKING B3 dual diode
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Untitled
Abstract: No abstract text available
Text: TVS Diode Transient Voltage Suppressor Diodes ESD5V3U2U Series Uni-directional Ultra Low ESD / Transient Protection Diode ESD5V3U2U-03F ESD5V3U2U-03LRH Data Sheet Revision 1.3, 2013-08-16 Final Power Management & Multimarket Edition 2013-08-16 Published by
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ESD5V3U2U-03F
ESD5V3U2U-03LRH
AN210:
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Untitled
Abstract: No abstract text available
Text: TVS Diode Transient Voltage Suppressor Diodes ESD201-B2-03LRH Bi-directional Dual Diode for ESD/Transient Protection ESD201-B2-03LRH Data Sheet Revision 1.1, 2012-09-26 Final Power Management & Multimarket Edition 2012-09-26 Published by Infineon Technologies AG
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ESD201-B2-03LRH
AN210:
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ST62T00C
Abstract: KB MARKING PSO16 SSOP16 ST6200L ST6201L ST6203L T01C
Text: ST6200L/01L/03L LOW VOLTAGE 8-BIT ROM MCUs WITH A/D CONVERTER, TWO TIMERS & SAFE RESET • ■ ■ ■ ■ ■ ■ Memories – 1K or 2K bytes Program memory with readout protection – 64 bytes RAM Clock, Reset and Supply Management – Enhanced reset system
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ST6200L/01L/03L
ST62T00C
KB MARKING
PSO16
SSOP16
ST6200L
ST6201L
ST6203L
T01C
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PSO16
Abstract: st62t00c VR02001 ST6200LM1
Text: ST6200L/01L/03L LOW VOLTAGE 8-BIT ROM MCUs WITH A/D CONVERTER, TWO TIMERS & SAFE RESET • ■ ■ ■ ■ ■ ■ ■ Memories – 1K or 2K bytes Program memory with readout protection – 64 bytes RAM Clock, Reset and Supply Management – Enhanced reset system
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Original
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ST6200L/01L/03L
PSO16
st62t00c
VR02001
ST6200LM1
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82HS641B
Abstract: 82HS641B/BJA 82HS641 8200901JX 8200902JA 82HS641A CDFP M38510/8200901JA 93Z667DMQB45 e174
Text: R EV ISIO N S A P P R O V ED D A TE YR-MO-DA D ESC R IPTIO N LTR Redrawn with changes. Delete vendor C A G E 27014 for PINs 01J , 01L, 013, 02J , 02L, 023, 03J, 03L, and 033. Add vendor C A G E 07933 for PINs 01 J , 01X , and 01L Change vendor C A G E 18324 similar PIN for
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OCR Scan
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T00470Ã
82HS641B
82HS641B/BJA
82HS641
8200901JX
8200902JA
82HS641A
CDFP
M38510/8200901JA
93Z667DMQB45
e174
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PDF
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BBY53
Abstract: BBY53-02L BBY53-02V BBY53-02W BBY53-03LRH BBY53-03W BBY53-05W SC79 SCD80
Text: BBY53. Silicon Tuning Diode • High Q hyperabrupt tuning diode • Designed for low tuning voltage operation for VCO's in mobile communications equipment • High ratio at low reverse voltage BBY53-02L BBY53-02V BBY53-02W BBY53-03W BBY53-03LRH BBY53 BBY53-05W
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Original
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BBY53.
BBY53-02L
BBY53-02V
BBY53-02W
BBY53-03W
BBY53-03LRH
BBY53
BBY53-05W
BBY53
BBY53-02L
BBY53-02V
BBY53-02W
BBY53-03LRH
BBY53-03W
BBY53-05W
SC79
SCD80
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SUM110N04-03L
Abstract: SUM110N04-03L-E3 DEVICE MARKING 03L
Text: SUM110N04-03L Vishay Siliconix N-Channel 40-V D-S 175 °C MOSFET FEATURES PRODUCT SUMMARY V(BR)DSS (V) rDS(on) (Ω) 0.0035 at VGS = 10 V 40 0.0053 at VGS = 4.5 V • TrenchFET Power MOSFET • 175 °C Junction Temperature ID (A) Available RoHS* a 110 COMPLIANT
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SUM110N04-03L
O-263
SUM110N04-03L-E3
18-Jul-08
SUM110N04-03L
SUM110N04-03L-E3
DEVICE MARKING 03L
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PDF
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Untitled
Abstract: No abstract text available
Text: SUM110N04-03L Vishay Siliconix N-Channel 40-V D-S 175 °C MOSFET FEATURES PRODUCT SUMMARY V(BR)DSS (V) rDS(on) (Ω) 0.0035 at VGS = 10 V 40 0.0053 at VGS = 4.5 V • TrenchFET Power MOSFET • 175 °C Junction Temperature ID (A) Available RoHS* a 110 COMPLIANT
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SUM110N04-03L
O-263
SUM110N04-03L
SUM110N04-03L-E3
08-Apr-05
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PDF
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ST62T00C
Abstract: PSO16 ST6200L ST6201L ST6203L T01C
Text: ST6200L/01L/03L R LOW VOLTAGE 8-BIT ROM MCUs WITH A/D CONVERTER,AND 16 PINS • ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ 2.4 to 3.9V Supply Operating Range 4 MHz Maximum Clock Frequency 0 to +70°C Operating Temperature Range Run, Wait and Stop Modes
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ST6200L/01L/03L
64bytes
ST6203L)
ST62T00C
PSO16
ST6200L
ST6201L
ST6203L
T01C
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PDF
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DEVICE MARKING 03L
Abstract: No abstract text available
Text: SQM110N04-03L Vishay Siliconix Automotive N-Channel 40 V D-S 175 °C MOSFET FEATURES PRODUCT SUMMARY VDS (V) • Halogen-free According to IEC 61249-2-21 Definition 40 RDS(on) () at VGS = 10 V 0.0035 RDS(on) () at VGS = 4.5 V 0.0053 ID (A) • TrenchFET Power MOSFET
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SQM110N04-03L
AEC-Q101
2002/95/EC
O-263
O-263
SQM110N04-03L-GE3
18-Jul-08
DEVICE MARKING 03L
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SQM110N04-03L-GE3
Abstract: DEVICE MARKING 03L
Text: SQM110N04-03L Vishay Siliconix Automotive N-Channel 40 V D-S 175 °C MOSFET FEATURES PRODUCT SUMMARY VDS (V) • Halogen-free According to IEC 61249-2-21 Definition 40 RDS(on) (Ω) at VGS = 10 V 0.0035 RDS(on) (Ω) at VGS = 4.5 V 0.0053 ID (A) • TrenchFET Power MOSFET
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Original
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SQM110N04-03L
AEC-Q101
2002/95/EC
O-263
SQM110N04-03L-GE3
18-Jul-08
SQM110N04-03L-GE3
DEVICE MARKING 03L
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Untitled
Abstract: No abstract text available
Text: SQM120N04-03L www.vishay.com Vishay Siliconix Automotive N-Channel 40 V D-S 175 °C MOSFET FEATURES PRODUCT SUMMARY VDS (V) • Halogen-free According to IEC 61249-2-21 Definition 40 RDS(on) () at VGS = 10 V 0.0035 RDS(on) () at VGS = 4.5 V 0.0053
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SQM120N04-03L
AEC-Q101
2002/95/EC
O-263
O-263
SQM120N04-03L-GE3
11-Mar-11
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PDF
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67061
Abstract: SQM120N04-03L
Text: SQM120N04-03L Vishay Siliconix Automotive N-Channel 40 V D-S 175 °C MOSFET FEATURES PRODUCT SUMMARY VDS (V) • Halogen-free According to IEC 61249-2-21 Definition 40 RDS(on) () at VGS = 10 V 0.0035 RDS(on) () at VGS = 4.5 V 0.0053 ID (A) • TrenchFET Power MOSFET
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Original
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SQM120N04-03L
AEC-Q101
2002/95/EC
O-263
O-263
SQM120N04-03L-GE3
11-Mar-11
67061
SQM120N04-03L
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PDF
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ST62T00C
Abstract: No abstract text available
Text: / T 7 SCS-THOM SON EfflO g[S [l[L[l(g¥®(ô Ki]D(gê ST6200L/01L/03L LOW VOLTAGE 8-BIT ROM MCUs WITH A/D CONVERTER,AND 16 PINS • 2.4 to 3.9V Supply Operating Range ■ 4 MHz Maximum Clock Frequency ■ 0 to +70°C Operating Temperature Range ■ ■ ■
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OCR Scan
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ST6200L/01L/03L
64bytes
ST6203L)
ST62T00C
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PDF
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Untitled
Abstract: No abstract text available
Text: SQM120N04-03L www.vishay.com Vishay Siliconix Automotive N-Channel 40 V D-S 175 °C MOSFET FEATURES PRODUCT SUMMARY VDS (V) • Halogen-free According to IEC 61249-2-21 Definition 40 RDS(on) () at VGS = 10 V 0.0035 RDS(on) () at VGS = 4.5 V 0.0053
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SQM120N04-03L
AEC-Q101
2002/95/EC
O-263
O-263
SQM120N04-03L-GE3
2011/65/EU
2002/95/EC.
2002/95/EC
2011/65/EU.
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PDF
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Untitled
Abstract: No abstract text available
Text: SQM120N04-03L www.vishay.com Vishay Siliconix Automotive N-Channel 40 V D-S 175 °C MOSFET FEATURES PRODUCT SUMMARY VDS (V) • Halogen-free According to IEC 61249-2-21 Definition 40 RDS(on) () at VGS = 10 V 0.0035 RDS(on) () at VGS = 4.5 V 0.0053
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Original
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SQM120N04-03L
AEC-Q101
O-263
2002/95/EC
SQM120N04-03L-GE3
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
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PDF
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Untitled
Abstract: No abstract text available
Text: SQM110N04-03L www.vishay.com Vishay Siliconix Automotive N-Channel 40 V D-S 175 °C MOSFET FEATURES PRODUCT SUMMARY VDS (V) • Halogen-free According to IEC 61249-2-21 Definition 40 RDS(on) () at VGS = 10 V 0.0035 RDS(on) () at VGS = 4.5 V 0.0053
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Original
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SQM110N04-03L
AEC-Q101
O-263
2002/95/EC
SQM110N04-03L-GE3
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
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PDF
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Untitled
Abstract: No abstract text available
Text: SQM110N04-03L Vishay Siliconix Automotive N-Channel 40 V D-S 175 °C MOSFET FEATURES PRODUCT SUMMARY VDS (V) • Halogen-free According to IEC 61249-2-21 Definition 40 RDS(on) () at VGS = 10 V 0.0035 RDS(on) () at VGS = 4.5 V 0.0053 ID (A) • TrenchFET Power MOSFET
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Original
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SQM110N04-03L
AEC-Q101
2002/95/EC
O-263
O-263
SQM110N04-03L-GE3
11-Mar-11
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PDF
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Untitled
Abstract: No abstract text available
Text: SQM110N04-03L www.vishay.com Vishay Siliconix Automotive N-Channel 40 V D-S 175 °C MOSFET FEATURES PRODUCT SUMMARY VDS (V) • Halogen-free According to IEC 61249-2-21 Definition 40 RDS(on) () at VGS = 10 V 0.0035 RDS(on) () at VGS = 4.5 V 0.0053
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Original
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SQM110N04-03L
AEC-Q101
2002/95/EC
O-263
O-263
SQM110N04-03L-GE3
2011/65/EU
2002/95/EC.
2002/95/EC
2011/65/EU.
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PDF
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Untitled
Abstract: No abstract text available
Text: SQM110N04-03L www.vishay.com Vishay Siliconix Automotive N-Channel 40 V D-S 175 °C MOSFET FEATURES PRODUCT SUMMARY VDS (V) • Halogen-free According to IEC 61249-2-21 Definition 40 RDS(on) () at VGS = 10 V 0.0035 RDS(on) () at VGS = 4.5 V 0.0053
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Original
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SQM110N04-03L
AEC-Q101
2002/95/EC
O-263
O-263
SQM110N04-03L-GE3
11-Mar-11
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PDF
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Untitled
Abstract: No abstract text available
Text: SQM120N04-03L www.vishay.com Vishay Siliconix Automotive N-Channel 40 V D-S 175 °C MOSFET FEATURES PRODUCT SUMMARY VDS (V) • Halogen-free According to IEC 61249-2-21 Definition 40 RDS(on) () at VGS = 10 V 0.0035 RDS(on) () at VGS = 4.5 V 0.0053
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Original
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SQM120N04-03L
AEC-Q101
O-263
2002/95/EC
SQM120N04-03L-GE3
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
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PDF
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