Untitled
Abstract: No abstract text available
Text: 184PIN DDR333 Unbuffered DIMM 1024MB With 64Mx8 CL2.5 TS128MLD64V3J Description Placement The TS128MLD64V3J is a 64Mx64bits Double Data Rate SDRAM high-density Module for DDR333. The TS128MLD64V3J consists of 16pcs CMOS 64Mx8 bits Double Data Rate SDRAMs in 66 pin TSOP-II 400mil
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184PIN
DDR333
1024MB
64Mx8
TS128MLD64V3J
TS128MLD64V3J
64Mx64bits
DDR333.
16pcs
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Untitled
Abstract: No abstract text available
Text: V58C2128 804/404/164 SB HIGH PERFORMANCE 128 Mbit DDR SDRAM 4 BANKS X 4Mbit X 8 (804) 4 BANKS X 2Mbit X 16 (164) 4 BANKS X 8Mbit X 4 (404) 5 6 DDR400 DDR333 7.5 ns 7.5 ns Clock Cycle Time (tCK2.5) 6ns 6 ns Clock Cycle Time (tCK3) 5ns 6 ns 200 MHz 166 MHz Clock Cycle Time (tCK2)
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V58C2128
DDR400
DDR333
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Untitled
Abstract: No abstract text available
Text: 200PIN DDR333 Unbuffered SO-DIMM 512MB With 32Mx8 CL2.5 TS64MSD72V3F Description Placement The TS64MSD72V3F is a 64M x 72bits Double Data Rate SDRAM high-density for DDR333. The TS64MSD72V3F consists of 18pcs CMOS 32Mx8 bits Double Data Rate SDRAMs in 66 pin TSOP-II 400mil packages 、1pcs PLL
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200PIN
DDR333
512MB
32Mx8
TS64MSD72V3F
TS64MSD72V3F
72bits
DDR333.
18pcs
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Untitled
Abstract: No abstract text available
Text: 184PIN DDR333 Unbuffered DIMM 256MB With 32Mx8 CL2.5 TS32MLD64V3FI Description Placement The TS32MLD64V3FI is a 32M x 64bits Double Data Rate SDRAM high-density for DDR333. The TS32MLD64V3FI consists of 8pcs CMOS 32Mx8 bits Double Data Rate SDRAMs in 66 pin TSOP-II 400mil packages and a 2048
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184PIN
DDR333
256MB
32Mx8
TS32MLD64V3FI
TS32MLD64V3FI
64bits
DDR333.
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256mb ddr333 200 pin
Abstract: A11 MARKING CODE mark DM 8M16 DDR200 DDR266 DDR333 MT46V16M8 MT46V32M4 MT46V8M16
Text: PRELIMINARY‡ 128Mb: x4, x8, x16 DDR333 SDRAM Addendum MT46V32M4 – 8 Meg x 4 x 4 banks MT46V16M8 – 4 Meg x 8 x 4 banks MT46V8M16 – 2 Meg x 16 x 4 banks DOUBLE DATA RATE DDR SDRAM For the latest data sheet revisions, please refer to the Micron Web site: www.micron.com/dramds
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128Mb:
DDR333
MT46V32M4
MT46V16M8
MT46V8M16
256Mb:
256mb ddr333 200 pin
A11 MARKING CODE
mark DM
8M16
DDR200
DDR266
MT46V16M8
MT46V32M4
MT46V8M16
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64MX64
Abstract: DDR266 DDR333 DDR400B PC2100 PC2700 PC3200
Text: P64M648HHJ - 512MB, P64M648IGJ-512MB, P128M6416HHJ –1GB SDRAM DDR MODULE 64M, 128M X 64 DIMM Features: • • • • • • • • • • • • • 184 pin dual in-line memory modules DIMM Fast data transfer rates PC2100, PC2700, PC3200 Utilizes DDR266, DDR333 and DDR400B DDR
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P64M648HHJ
512MB,
P64M648IGJ-512MB,
P128M6416HHJ
PC2100,
PC2700,
PC3200
DDR266,
DDR333
DDR400B
64MX64
DDR266
PC2100
PC2700
PC3200
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Untitled
Abstract: No abstract text available
Text: V58C2512 804/404/164 SD HIGH PERFORMANCE 512 Mbit DDR SDRAM 4 BANKS X 16Mbit X 8 (804) 4 BANKS X 32Mbit X 4 (404) 4 BANKS X 8Mbit X 16 (164) 4 5 6 75 DDR500 DDR400 DDR333 DDR266 - 6ns 6ns 7.5ns 4ns 5ns - - 250 MHz 200 MHz 166 MHz 133 MHz Clock Cycle Time (tCK2.5)
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V58C2512
16Mbit
32Mbit
DDR500
DDR400
DDR333
DDR266
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Untitled
Abstract: No abstract text available
Text: V58C2256 804/404/164 SA HIGH PERFORMANCE 256 Mbit DDR SDRAM 4 BANKS X 8Mbit X 8 (804) 4 BANKS X 4Mbit X 16 (164) 4 BANKS X 16Mbit X 4 (404) 5B 5 6 7 DDR400 DDR400 DDR333 DDR266 7.5 ns 7.5 ns 7.5 ns 7.5ns Clock Cycle Time (tCK2.5) 5ns 6ns 6 ns 7ns Clock Cycle Time (tCK3)
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V58C2256
16Mbit
DDR400
DDR333
DDR266
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Untitled
Abstract: No abstract text available
Text: V58C2128 804/404/164 SB HIGH PERFORMANCE 128 Mbit DDR SDRAM 4 BANKS X 4Mbit X 8 (804) 4 BANKS X 2Mbit X 16 (164) 4 BANKS X 8Mbit X 4 (404) 5 6 DDR400 DDR333 7.5 ns 7.5 ns Clock Cycle Time (tCK2.5) 6ns 6 ns Clock Cycle Time (tCK3) 5ns 6 ns 200 MHz 166 MHz Clock Cycle Time (tCK2)
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V58C2128
DDR400
DDR333
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Untitled
Abstract: No abstract text available
Text: V58C2128 804/404/164 SB HIGH PERFORMANCE 128 Mbit DDR SDRAM 4 BANKS X 4Mbit X 8 (804) 4 BANKS X 2Mbit X 16 (164) 4 BANKS X 8Mbit X 4 (404) 5B 5 6 7 DDR400 DDR400 DDR333 DDR266 7.5 ns 7.5 ns 7.5 ns 7.5ns Clock Cycle Time (tCK2.5) 5ns 6ns 6 ns 7ns Clock Cycle Time (tCK3)
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V58C2128
DDR400
DDR333
DDR266
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Untitled
Abstract: No abstract text available
Text: V58C2128 804/404/164 SE HIGH PERFORMANCE 128 Mbit DDR SDRAM 4 BANKS X 4Mbit X 8 (804) 4 BANKS X 2Mbit X 16 (164) 4 BANKS X 8Mbit X 4 (404) 4 5 6 DDR500 DDR400 DDR333 7.5 ns 7.5 ns 7.5 ns Clock Cycle Time (tCK2.5) 5ns 6ns 6 ns Clock Cycle Time (tCK3) 4ns 5ns
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V58C2128
DDR500
DDR400
DDR333
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Untitled
Abstract: No abstract text available
Text: V58C2128 804/404/164 SE HIGH PERFORMANCE 128 Mbit DDR SDRAM 4 BANKS X 4Mbit X 8 (804) 4 BANKS X 2Mbit X 16 (164) 4 BANKS X 8Mbit X 4 (404) 4 5 6 DDR500 DDR400 DDR333 7.5 ns 7.5 ns 7.5 ns Clock Cycle Time (tCK2.5) 5ns 6ns 6 ns Clock Cycle Time (tCK3) 4ns 5ns
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V58C2128
DDR500
DDR400
DDR333
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Untitled
Abstract: No abstract text available
Text: V58C2512 804/404/164 SA*I HIGH PERFORMANCE 512 Mbit DDR SDRAM 4 BANKS X 16Mbit X 8 (804) 4 BANKS X 32Mbit X 4 (404) 4 BANKS X 8Mbit X 16 (164) 5 6 DDR400 DDR333 7.5 ns 7.5 ns Clock Cycle Time (tCK2.5) 6ns 6 ns Clock Cycle Time (tCK3) 5ns 6 ns 200 MHz 166 MHz
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V58C2512
16Mbit
32Mbit
DDR400
DDR333
200MHz
809of
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Untitled
Abstract: No abstract text available
Text: V58C2256 804/404/164 SG HIGH PERFORMANCE 256 Mbit DDR SDRAM 4 BANKS X 8Mbit X 8 (804) 4 BANKS X 4Mbit X 16 (164) 4 BANKS X 16Mbit X 4 (404) 4 45 5D 5B 5 6 7 DDR500 DDR440 DDR400 DDR400 DDR400 DDR333 DDR266 Clock Cycle Time (tCK2) 5ns 5ns 5ns 7.5ns 7.5ns 7.5ns
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V58C2256
16Mbit
DDR500
DDR440
DDR400
DDR333
DDR266
|
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BA 5053
Abstract: No abstract text available
Text: V58C2256 804/404/164 SC HIGH PERFORMANCE 256 Mbit DDR SDRAM 4 BANKS X 8Mbit X 8 (804) 4 BANKS X 4Mbit X 16 (164) 4 BANKS X 16Mbit X 4 (404) 4 45 5D 5B 5 6 7 DDR500 DDR440 DDR400 DDR400 DDR400 DDR333 DDR266 5ns 5ns 5ns 7.5ns 7.5ns 7.5ns 7.5ns Clock Cycle Time (tCK2.5)
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V58C2256
16Mbit
DDR500
DDR440
DDR400
DDR333
DDR266
BA 5053
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V58C2512
Abstract: No abstract text available
Text: V58C2512 804/404/164 SD*I 512 Mbit DDR SDRAM, INDUSTRIAL TEMPERATURE 4 BANKS X 16Mbit X 8 (804) 4 BANKS X 32Mbit X 4 (404) 4 BANKS X 8Mbit X 16 (164) 4 5 6 75 DDR500 DDR400 DDR333 DDR266 - 6ns 6ns 7.5ns 4ns 5ns - - 250 MHz 200 MHz 166 MHz 133 MHz Clock Cycle Time (tCK2.5)
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V58C2512
16Mbit
32Mbit
DDR500
DDR400
DDR333
DDR266
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datasheet DIMM DDR400 PC3200
Abstract: DDR333 DDR400 PC3200
Text: Memory Module Data Sheet T1664D46 128MB 16M x 64-bit DDR400 PC3200 SPECIFICATIONS; • 128MB (16M x 64-bit) Unbuffered DDR333 DIMM • TSOP-II 16M x 16 (4M x 16 bit x 4 Bank/200Mhz) x Four DRAM • 184-pin Dual in-line memory module with Gold Plated Contacts
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T1664D46
128MB
64-bit
DDR400
PC3200)
128MB
64-bit)
DDR333
Bank/200Mhz)
184-pin
datasheet DIMM DDR400 PC3200
DDR400
PC3200
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256mb ddr333
Abstract: L3264S36 DDR333 DDR400 PC2700 256mb ddr333 200 pin DDR333/PC2700
Text: Memory Module Data Sheet L3264S36 256MB 32M x 64-bit DDR333 PC2700 SoDIMM SPECIFICATIONS; • 256MB (32M x 64-bit) Unbuffered DDR400 SoDIMM • TSOP II 16M x 16 (4M x 16 bit x 4 Bank/200Mhz) x Eight DRAM • 200-pin Small Outline Dual Inline memory module with Gold Plated
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L3264S36
256MB
64-bit
DDR333
PC2700)
256MB
64-bit)
DDR400
Bank/200Mhz)
200-pin
256mb ddr333
L3264S36
DDR333
PC2700
256mb ddr333 200 pin
DDR333/PC2700
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256mb ddr333
Abstract: ddr333 pc2700 memory DDR333 PC2700 L3264D36
Text: Memory Module Data Sheet L3264D36 256MB 32M x 64-bit DDR333 PC2700 SPECIFICATIONS; • 256MB (32M x 64-bit) Unbuffered DDR333 DIMM • TSOP-II 32M x 8 (8M x 8 bit x 4 Bank/200Mhz) x Eight DRAM • 184-pin Dual in-line memory module with Gold Plated Contacts
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L3264D36
256MB
64-bit
DDR333
PC2700)
256MB
64-bit)
DDR333
Bank/200Mhz)
184-pin
256mb ddr333
ddr333 pc2700 memory
PC2700
L3264D36
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ddr333 pc2700 memory
Abstract: datasheet DIMM DDR333 DDR333 PC2700
Text: Memory Module Data Sheet L6472D36 512MB 64M x 72-bit ECC DDR333 PC2700 SPECIFICATIONS; • 512MB (32M x 72-bit) Unbuffered DDR333 DIMM • Error Check Correction (ECC) Capability • TSOP-II 32M x 8 (8M x 8 bit x 4 Bank/200Mhz) x Eighteen DRAM • 184-pin Dual in-line memory module with Gold Plated Contacts
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L6472D36
512MB
72-bit
DDR333
PC2700)
512MB
72-bit)
DDR333
Bank/200Mhz)
184-pin
ddr333 pc2700 memory
datasheet DIMM DDR333
PC2700
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GIGABYTE
Abstract: l1272yc6 DIMM double data rate DDR333
Text: LEGEND L1272YC6 Opteron Ready Registered ECC DDR333 Features • • • • • • • • • 1 Gigabyte Industry Standard 184-pin Low Profile DIMM Error Correction Support Registered for high density applications 333MHz Double Data Rate 266MHz Double Data Rate also supported
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L1272YC6
DDR333
184-pin
333MHz
266MHz
GIGABYTE
l1272yc6
DIMM
double data rate
DDR333
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SG5723285D8D6CL
Abstract: No abstract text available
Text: SU5723285D8D6CL July 26, 2007 Ordering Information Part Numbers Description Module Speed SM5723285D8D6CL 32Mx72 256MB , DDR, 184-pin DIMM, Unbuffered, ECC, 32Mx8 Based, DDR333B, 31.75mm, 22Ω DQ termination. PC2700 @ CL 2.5 SG5723285D8D6CL 32Mx72 (256MB), DDR, 184-pin DIMM, Unbuffered, ECC,
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SU5723285D8D6CL
SM5723285D8D6CL
SG5723285D8D6CL
32Mx72
256MB)
184-pin
32Mx8
DDR333B,
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Untitled
Abstract: No abstract text available
Text: SU5722845D8E6CL August 26, 2004 Ordering Information Part Numbers Description Module Speed SM5722845D8E6CL 128Mx72 1GB , DDR, 184-pin DIMM, Registered, ECC, 64Mx4 Based, DDR333B, 52.07mm, 22Ω DQ termination. PC2700 @ CL 2.5 SB5722845D8E6CL 128Mx72 (1GB), DDR, 184-pin DIMM, Registered, ECC,
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SU5722845D8E6CL
SM5722845D8E6CL
SB5722845D8E6CL
128Mx72
184-pin
64Mx4
DDR333B,
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SG572568
Abstract: No abstract text available
Text: SU5725685D8EBCU01 October 21, 2005 Ordering Information Part Numbers Description Module Speed SM5725685D8EBCL01 256Mx72 2GB , DDR, 184-pin DIMM, Registered, ECC, 128Mx8 Based (Stacked - two 128Mx4), DDR333B, 30.48mm, 22Ω DQ termination. PC2700 @ CL 2.5
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SU5725685D8EBCU01
SM5725685D8EBCL01
256Mx72
184-pin
128Mx8
128Mx4)
DDR333B,
SG572568
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