DDR200
Abstract: DDR266A DDR266B IBMN612404GT3B IBMN612804GT3B IBMN62540 IBMN62580 128MB PC266
Text: IBMN612404GT3B IBMN612804GT3B 128Mb Double Data Rate Synchronous DRAM Preliminary Features CAS Latency and Frequency CAS Latency 2 2.5 Maximum Operating Frequency MHz * DDR266A (7N) DDR266B (75N) DDR200 (8N) 133 143 100 133 100 125 * Values are nominal (exact tCK should be used).
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IBMN612404GT3B
IBMN612804GT3B
128Mb
DDR266A
DDR266B
DDR200
06K0566
F39350B
DDR200
DDR266A
DDR266B
IBMN612404GT3B
IBMN612804GT3B
IBMN62540
IBMN62580
128MB PC266
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DDR200
Abstract: DDR266A DDR266B IBMN62540 IBMN625404GT3B IBMN62580 IBMN625804GT3B
Text: IBMN625404GT3B IBMN625804GT3B 256Mb Double Data Rate Synchronous DRAM Preliminary Features CAS Latency and Frequency CAS Latency Maximum Operating Frequency MHz * DDR266A (7N) DDR266B (75N) DDR200 (8N) 133 143 100 133 100 125 2 2.5 * Values are nominal (exact tCK should be used).
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IBMN625404GT3B
IBMN625804GT3B
256Mb
DDR266A
DDR266B
DDR200
29L0011
E36997B
DDR200
DDR266A
DDR266B
IBMN62540
IBMN625404GT3B
IBMN62580
IBMN625804GT3B
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VDDSPD
Abstract: IC PIN CONFIGURATION OF 74 47
Text: SL72E5M256M8M-B75EW 256M X 72 Bits 2GB DDR SDRAM 184-Pin 1U Registered DIMM ECC (PC2100) FEATURES • • • • • • • • • • • • GENERAL DESCRIPTION PC2100 Compliant (DDR266B 133MHz—7.5ns@CL=2.5) 184-Pin DIMM form factor Auto and self refresh capability
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SL72E5M256M8M-B75EW
184-Pin
PC2100)
PC2100
DDR266B
133MHz--7
cycles/64ms
JEP-106E
VDDSPD
IC PIN CONFIGURATION OF 74 47
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Untitled
Abstract: No abstract text available
Text: PRELIMINARY V58C2256 804/404/164 S HIGH PERFORMANCE 256 Mbit DDR SDRAM 4 BANKS X 8Mbit X 8 (804) 4 BANKS X 4Mbit X 16 (164) 4 BANKS X 16Mbit X 4 (404) MOSEL VITELIC 5 6 7 75 8 DDR400A DDR333B DDR266A DDR266B DDR200 7.5 ns 7.5 ns 7.5ns 10 ns 10 ns Clock Cycle Time (tCK2.5)
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V58C2256
16Mbit
DDR400A
DDR333B
DDR266A
DDR266B
DDR200
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DQSQ
Abstract: No abstract text available
Text: PRELIMINARY V58C2256 804/404/164 S HIGH PERFORMANCE 2.5 VOLT 256 Mbit DDR SDRAM 4 BANKS X 8Mbit X 8 (804) 4 BANKS X 4Mbit X 16 (164) 4 BANKS X 16Mbit X 4 (404) MOSEL VITELIC Clock Cycle Time (tCK2) 6 7 75 8 DDR333B DDR266A DDR266B DDR200 7.5 ns 7.5ns 10 ns
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V58C2256
16Mbit
DDR333B
DDR266A
DDR200
DDR266B
DQSQ
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Untitled
Abstract: No abstract text available
Text: PRELIMINARY V58C2128 804/404/164 SAT HIGH PERFORMANCE 2.5 VOLT 128 Mbit DDR SDRAM 4 BANKS X 4Mbit X 8 (804) 4 BANKS X 2Mbit X 16 (404) 4 BANKS X 8Mbit X 4 (164) MOSEL VITELIC Clock Cycle Time (tCK2) 7 75 8 DDR266A DDR266B DDR200 7.5 ns 10 ns 10 ns 7 ns 7.5 ns
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V58C2128
DDR266A
DDR266B
DDR200
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Untitled
Abstract: No abstract text available
Text: IBMN612404GT3B IBMN612804GT3B 128Mb Double Data Rate Synchronous DRAM Preliminary Features CAS Latency and Frequency CAS Latency 2 2.5 Maximum Operating Frequency MHz * DDR266A (7N) DDR266B (75N) DDR200 (8N) 133 143 100 133 100 125 * Values are nominal (exact tCK should be used).
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IBMN612404GT3B
IBMN612804GT3B
128Mb
DDR266A
DDR266B
DDR200
06K0566
F39350A
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N2DS25H16BT-5T
Abstract: N2DS25H16BS-5T Elixir N2DS25H16BS N2DS25H16BS-6K
Text: N2DS25H16BT/N2DS25H16BS Preliminary Edition 256Mb DDR SDRAM Features • • • • • CAS Latency and Frequency CAS Latency 2 2.5 3 Maximum Operating Frequency MHz DDR400 DDR333 DDR266B (5T) (6K) (-75B) 133 100 166 166 133 200 - • • • • • •
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N2DS25H16BT/N2DS25H16BS
256Mb
DDR400
DDR333
DDR266B
110nm
71REF
N2DS25H16BT-5T
N2DS25H16BS-5T
Elixir
N2DS25H16BS
N2DS25H16BS-6K
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Untitled
Abstract: No abstract text available
Text: NT5DS128M4AF NT5DS64M8AF NT5DS32M16AF 512Mb DDR SDRAM Features • • • • • CAS Latency and Frequency Maximum Operating Frequency MHz * CAS Latency DDR333 DDR266B (-6K)* (-75B) 2 133 100 2.5 166 133 * -6K also meets DDR266A Spec (MHz-CL- tRCD -t RP = 133-2-3-3)
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NT5DS128M4AF
NT5DS64M8AF
NT5DS32M16AF
512Mb
DDR333
DDR266B
DDR266A
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A 14U
Abstract: DDR200 DDR266A DDR266B DDR333B DDR400 DDR400A PC2100 PC2700 PC3200
Text: PRELIMINARY V58C2256 804/404/164 S HIGH PERFORMANCE 256 Mbit DDR SDRAM 4 BANKS X 8Mbit X 8 (804) 4 BANKS X 4Mbit X 16 (164) 4 BANKS X 16Mbit X 4 (404) MOSEL VITELIC 5B 5 6 7 75 8 DDR400A DDR400A DDR333B DDR266A DDR266B DDR200 7.5 ns 7.5 ns 7.5 ns 7.5ns 10 ns
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V58C2256
16Mbit
DDR400A
DDR333B
DDR266A
DDR266B
DDR200
A 14U
DDR200
DDR266A
DDR266B
DDR333B
DDR400
DDR400A
PC2100
PC2700
PC3200
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HYB25D256400AT-7
Abstract: No abstract text available
Text: HYB25D256400/800AT 256-MBit Double Data Rata SDRAM Features CAS Latency and Frequency CAS Latency 2 2.5 Maximum Operating Frequency MHz DDR266A DDR266B DDR200 -7 -7.5 -8 133 125 100 143 133 125 . • Double data rate architecture: two data transfers per clock cycle
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HYB25D256400/800AT
256-MBit
DDR266A
DDR266B
DDR200
HYB25D256400AT-7
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NT5DS32M16BF-6K
Abstract: DDR266B DDR333 DDR400
Text: NT5DS128M4BF / NT5DS128M4BT NT5DS64M8BF / NT5DS64M8BT NT5DS32M16BF / NT5DS32M16BT 512Mb DDR SDRAM Features • • • • • CAS Latency and Frequency CAS Latency 2 2.5 3 Maximum Operating Frequency MHz DDR400 DDR333 DDR266B (5T) (6K) (75B) 133 100 166
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NT5DS128M4BF
NT5DS128M4BT
NT5DS64M8BF
NT5DS64M8BT
NT5DS32M16BF
NT5DS32M16BT
512Mb
DDR400
DDR333
DDR266B
NT5DS32M16BF-6K
DDR266B
DDR333
DDR400
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ZK512M68J
Abstract: 079R 16MX64 16MX8 DDR266B wintec WINTEC INDUSTRIES
Text: REVISIONS DATE REV I. DESCRIPTION: W4E216646LA-75 is a 16MX64 industry standard 184-pin DDR SDRAM DIMM for DDR266B Ÿ Manufactured with 8 16MX8 400-mil TSOPII-66 133/100 MHz Double Data Rate Synchronous DESCRIPTION APPVD NR 5/31/00 Ÿ III. TIMING: DRAM devices
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W4E216646LA-75
16MX64
184-pin
DDR266B
16MX8
400-mil
TSOPII-66
133MHz
100MHz
/-25mV
ZK512M68J
079R
DDR266B
wintec
WINTEC INDUSTRIES
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Untitled
Abstract: No abstract text available
Text: PRELIMINARY V58C2256 804/404/164 S HIGH PERFORMANCE 2.5 VOLT 256 Mbit DDR SDRAM 4 BANKS X 8Mbit X 8 (804) 4 BANKS X 4Mbit X 16 (164) 4 BANKS X 16Mbit X 4 (404) MOSEL VITELIC Clock Cycle Time (tCK2) 6 7 75 8 DDR333B DDR266A DDR266B DDR200 7.5 ns 7.5ns 10 ns
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V58C2256
16Mbit
DDR333B
DDR266A
DDR200
DDR266B
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Untitled
Abstract: No abstract text available
Text: MOSEL VITELIC PRELIMINARY V58C2128 804/404/164 SAT HIGH PERFORMANCE 2.5 VOLT 128 Mbit DDR SDRAM 4 BANKS X 4Mbit X 8 (804) 4 BANKS X 2Mbit X 16 (164) 4 BANKS X 8Mbit X 4 (404) Clock Cycle Time (tCK2) 6 7 75 8 DDR332 DDR266A DDR266B DDR200 6.5 ns 7.5 ns 10 ns
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V58C2128
DDR332
DDR266A
DDR200
DDR266B
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Untitled
Abstract: No abstract text available
Text: HYB25D256400/800T/AT 256-MBit Double Data Rata SDRAM Features CAS Latency and Frequency CAS Latency 2 2.5 Maximum Operating Frequency MHz DDR266A DDR266B DDR200 -7 -7.5 -8 133 125 100 143 133 125 . • Double data rate architecture: two data transfers per clock cycle
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HYB25D256400/800T/AT
256-MBit
DDR266A
DDR266B
DDR200
PC200
PC266
DDR266
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DQ24-A
Abstract: No abstract text available
Text: HYMD116M6458-H/L 16Mx64 DDR Unbuffered SO-DIMM SERIAL PRESENCE DETECT Bin S o rt: K DDR 266A CL=2 , H(DDR266B®C L=2.5), L(DDR200@ CL=2) Function Supported Byte# H e x a V a lu e Note F u n c tio n D e s c rip tio n K Number of Bytes written into serial memory at module
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HYMD116M6458-H/L
16Mx64
DDR266B
DDR200@
HYMD116M645A8-K/H/L
DQ24-A
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Untitled
Abstract: No abstract text available
Text: HYMD232M6466-K/H/L 32Mx64 DDR Unbuffered SO-DIMM SERIAL PRESENCE DETECT Bin Sort : K DDR266A@CL=2 , H(DDR266B@ CL=2.5), L(DDR200@CL=2) Function S upported Byte# H exa Value Function Description Note K N um ber o f Bytes w ritten into serial m em ory at m odule
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HYMD232M6466-K/H/L
32Mx64
DDR266A
DDR266B@
DDR200
HYMD232M6468-K/H/L
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Untitled
Abstract: No abstract text available
Text: HYMD2326468-K/H/L 32Mx64 DDR SDRAM Unbuffered DIMM SERIAL PRESENCE DETECT Bin Sort : K DDR266A@ CL=2 , H(DDR266B@ CL=2.5), L(DDR200@ CL=2) Function S upporte d Note K H e x a V a lu e Function Description B yte# H N u m b e r o f Bytes w ritten into serial m e m o ry a t m odule
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HYMD2326468-K/H/L
32Mx64
DDR266A@
DDR266B@
DDR200@
HYMD1327258-H/L
32Mx72
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Untitled
Abstract: No abstract text available
Text: HYMD18645A6-K/H/L 8Mx64 DDR SDRAM Unbuffered DIMM SERIAL PRESENCE DETECT Bin Sort : K DDR266A@ CL=2 , H(DDR266B@ CL=2.5), L(DDR200@ CL=2) Function Supported H exa Value Function Description Byte# Note K H L K H L Number o f Bytes written into serial memory at module
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HYMD18645A6-K/H/L
8Mx64
DDR266A@
DDR266B@
DDR200@
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HYNIX manufacturing code
Abstract: DDR SDRAM HYNIX SERIAL NUMBER
Text: HYMD2647268-K/H/L 64Mx72 DDR SDRAM Unbuffered DIMM SERIAL PRESENCE DETECT Bin Sort : K DDR266A@ CL=2 , H(DDR266B@ CL=2.5), l(D D R 200@ C L=2) Note Function Description K Number of Bytes written into serial memory at module manufacturer 1 Total number of Bytes in SPD device
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HYMD2647268-K/H/L
64Mx72
DDR266A@
DDR266B@
512MB
HYNIX manufacturing code
DDR SDRAM
HYNIX SERIAL NUMBER
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DDR SDRAM
Abstract: No abstract text available
Text: HYMD216M6466-K/H/L 16Mx64 DDR Unbuffered SO-DIMM SERIAL PRESENCE DETECT Bin Sort : K DDR266A@ CL=2 , H(DDR266B@ CL=2.5), L(DDR200@ CL=2) Function Supported Byte# Hexa Value Function Description Note K Number of Bytes written into serial memory at module manufacturer
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HYMD216M6466-K/H/L
16Mx64
DDR266A@
DDR266B@
DDR200@
128MB
DDR SDRAM
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Untitled
Abstract: No abstract text available
Text: HYMD116G7258-H/L 16Mx72 DDR SDRAM Registered DIMM SERIAL PRESENCE DETECT Bin Sort : K DDR 266A CL=2 , H(DDR266B@ CL=2.5), L(DDR2OO0CL=2) Function Supported Hexa Value Function Description Byte# Note K Number of Bytes written into serial memory at module
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HYMD116G7258-H/L
16Mx72
DDR266B@
HYMD116G725A8-K/H/L
128MB
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DDR SDRAM
Abstract: No abstract text available
Text: HYMD232G7268-K/H/L 32Mx72 DDR SDRAM Registered DIMM SERIAL PRESENCE DETECT Bin Sort : K DDR266A@ CL=2 , H(DDR266B@ CL=2.5), L(DDR200@ CL=2) Function Supported Byte# H e x a V a lu e F u n c tio n D e s c rip tio n Note K H L K H L Number of Bytes written into serial memory at module
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HYMD232G7268-K/H/L
32Mx72
DDR266A@
DDR266B@
DDR200@
128MB
256MB
DDR SDRAM
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