DBS22 Search Results

CHA2066

Abstract: MS11 MS12 MS21 MS22 PS11 PS12 PS22
Contextual Info: CHA2066 10-16GHz Low Noise Amplifier GaAs Monolithic Microwave IC G1 Description NC G2 Vd 7272 The CHA2066 is a two-stage wide band monolithic low noise amplifier. The circuit is manufactured with a standard HEMT process : 0.25µm gate length, via holes through the substrate, air bridges

CHA2066

Abstract: MS11 MS12 MS21 MS22 PS11 PS12 PS22 993 99f
Contextual Info: CHA2066 10-16GHz Low Noise Amplifier GaAs Monolithic Microwave IC G1 Description NC G2 Vd 7272 The CHA2066 is a two-stage wide band monolithic low noise amplifier. The circuit is manufactured with a standard HEMT process : 0.25µm gate length, via holes through the substrate, air bridges

fop 630

Abstract: CHA3664 CHA3664-QAG smd 1513 sas 560
Contextual Info: CHA3664-QAG RoHS COMPLIANT 5-21GHz Driver Amplifier GaAs Monolithic Microwave IC in SMD leadless package Description The CHA3664-QAG is a two-stage self-biased general purpose monolithic medium power amplifier. The circuit is manufactured with a power pHEMT process: 0.25µm gate length, via holes

AN0020

Abstract: CHA5014 9v23
Contextual Info: CHA5014 RoHS COMPLIANT X Band HBT Driver Amplifier GaAs Monolithic Microwave IC Description The CHA5014 chip is a monolithic twostage medium power amplifier designed for X band applications. Moreover this amplifier is relevant for systems that require an output power weakly sensitive to

CHA6517

Abstract: fop 630
Contextual Info: CHA6517 RoHS COMPLIANT 6-18GHz High Power Amplifier GaAs Monolithic Microwave IC Description The CHA6517 is a Dual channel monolithic three-stage GaAs high power amplifier designed for wide band applications. This device is manufactured using a UMS 0.25 µm Power pHEMT process,

AN0017

Abstract: CHA3693-QDG qfn 76 PACKAGE footprint
Contextual Info: CHA3693-QDG RoHS COMPLIANT 20-30GHz Medium Power Amplifier GaAs Monolithic Microwave IC in SMD package Description CHA3693-QDG on a Board The CHA3693-QDG is a high gain broadband four stage monolithic medium power amplifier. It is designed for a wide range of applications from

CHA2069-99F/00

Abstract: CHA2069
Contextual Info: CHA2069 RoHS COMPLIANT 18-31GHz Low Noise Amplifier GaAs Monolithic Microwave IC Description The circuit is a three-stage self biased wide band monolithic low noise amplifier. The circuit is manufactured with a standard pHEMT process: 0.25µm gate length, via

MAR105

Abstract: CHA2066 MS11 MS12 MS21 MS22 PS11 PS12 PS22 RF 3826
Contextual Info: CHA2066 RoHS COMPLIANT 10-16GHz Low Noise Amplifier GaAs Monolithic Microwave IC G1 Description NC G2 Vd 7272 The CHA2066 is a two-stage wide band monolithic low noise amplifier. The circuit is manufactured with a standard pHEMT process: 0.25µm gate length, via

x-Band High Power Amplifier

Abstract: 8205 MMIC X-band amplifier X-band GaAs pHEMT MMIC Chip x-band mmic 8205 A 8205 datasheet CHA6517 chip 8205 8205 6 pin
Contextual Info: CHA6517 RoHS COMPLIANT 6 - 18 GHz High Power Amplifier GaAs Monolithic Microwave IC Description The CHA6517 is a Dual channel monolithic three-stage GaAs high power amplifier designed for wide band applications. This device is manufactured using a UMS 0.25 µm Power pHEMT process, including,

nf46

Abstract: CHA3666 CHA3666-SNF
Contextual Info: CHA3666-SNF 5.8-16GHz Low Noise Amplifier GaAs Monolithic Microwave IC in hermetic package Description The CHA3666-SNF is a two-stage selfbiased wide band monolithic low noise amplifier. The circuit is manufactured with a standard P-HEMT process: 0.25µm gate length, via

CHT4690-99F

Abstract: CHT4690 DSCHT46905334
Contextual Info: CHT4690 RoHS COMPLIANT 5-30GHz ATTENUATOR GaAs Monolithic Microwave IC Description The CHT4690 is a variable 5-30GHz attenuator designed for a wide range of applications, from military to commercial communication systems. The backside of the chip is both RF and DC grounds.

CHA5012

Contextual Info: CHA5012 X Band Driver Amplifier GaAs Monolithic Microwave IC Description Main Features The CHA5012 chip is a monolithic twostage medium power amplifier designed for X band applications. This device is manufactured using a GaInP HBT process, including, via holes through

x-Band High Power Amplifier

Abstract: chip 8205 8205 8205 datasheet CHA6517 x-band power amplifier S 8205 fop 630
Contextual Info: CHA6517 RoHS COMPLIANT 6 - 18 GHz High Power Amplifier GaAs Monolithic Microwave IC Description The CHA6517 is a Dual channel monolithic three-stage GaAs high power amplifier designed for wide band applications. This device is manufactured using a UMS 0.25 µm Power pHEMT process, including,

CHA2066

Abstract: MS11 MS12 MS21 MS22 PS11 PS12 PS22
Contextual Info: CHA2066 RoHS COMPLIANT 10-16GHz Low Noise Amplifier GaAs Monolithic Microwave IC G1 Description NC G2 Vd 7272 The CHA2066 is a two-stage wide band monolithic low noise amplifier. The circuit is manufactured with a standard HEMT process : 0.25µm gate length, via

CHA5012

Contextual Info: CHA5012 X Band Driver Amplifier GaAs Monolithic Microwave IC Description The CHA5012 chip is a monolithic twostage medium power amplifier designed for X band applications. This device is manufactured using a GaInP HBT process, including via holes through the substrate and air bridges. A nitride

CHT4690

Abstract: CHT4690-99F 99-F
Contextual Info: CHT4690-99F RoHS COMPLIANT 5-30GHz ATTENUATOR GaAs Monolithic Microwave IC Description The CHT4690 is a variable 5-30GHz attenuator designed for a wide range of applications, from military to commercial communication systems. The backside of the chip is both RF and DC grounds. This helps

10ghz variable attenuator

Abstract: Fixed Attenuators Surface Mount 30dB AN0017 CHT4690-QAG RO4003 10ghz attenuator
Contextual Info: CHT4690-QAG RoHS COMPLIANT 5-30GHz ATTENUATOR GaAs Monolithic Microwave IC in SMD leadless package Description The CHT4690-QAG is a variable 5-30GHz attenuator designed for a wide range of applications, from military to commercial communication systems. The circuit is manufactured with a

Contextual Info: CHA6105 RoHS COMPLIANT 8-12GHz Driver Amplifier GaAs Monolithic Microwave IC Description VD1 The CHA6105 is a monolithic three-stage medium power amplifier designed for X-band applications. The driver provides typically 31.5dBm output power at saturation and is suitable

Contextual Info: CHA3665-QAG RoHS COMPLIANT 5-21GHz Driver Amplifier GaAs Monolithic Microwave IC in SMD leadless package Description The CHA3665-QAG is a two-stage general purpose monolithic medium power amplifier. It is designed for a wide range of applications, from military to commercial

Contextual Info: CHA2093 RoHS COMPLIANT 20-30GHz Low Noise Amplifier GaAs Monolithic Microwave IC Vd Description The CHA2093 is a two-stage wide band monolithic low noise amplifier. IN OUT Vg 2 Vg 1 It is supplied in chip form. Gain dB Main Features 1 Broad band performance 20-30GHz

Contextual Info: CHA3666-FAA 6-16GHz Low Noise Amplifier GaAs Monolithic Microwave IC in SMD package Description The CHA3666-FAA is a two-stage self-biased wide band monolithic low noise amplifier. The circuit is manufactured with a standard pHEMT process: 0.25µm gate length, via

Contextual Info: CHA3666 RoHS COMPLIANT 6-17GHz Low Noise Amplifier GaAs Monolithic Microwave IC Description VD1 VD2 The CHA3666 is a two-stage self biased wide band monolithic low noise amplifier. The circuit is manufactured with a standard pHEMT process: 0.25µm gate length, via

Contextual Info: CHA1014 RoHS COMPLIANT 7-14GHz Low Noise Amplifier GaAs Monolithic Microwave IC Description The CHA1014 is a monolithic two-stage wide band low noise amplifier designed for a wide range of applications. The circuit is manufactured with a standard pHEMT process 0.25µm gate length, via

Contextual Info: CHA5014-99F RoHS COMPLIANT X Band HBT Driver Amplifier GaAs Monolithic Microwave IC Description The CHA5014 chip is a monolithic twostage medium power amplifier designed for X band applications. Moreover this amplifier is relevant for systems that require an output power weakly sensitive to