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    DBS22 Price and Stock

    Daniels Manufacturing Corporation (DMC) DBS-2200

    Other Tools Single Step 1/8" Banding Tool
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    Mouser Electronics DBS-2200 3
    • 1 $2472.1
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    • 100 $2472.1
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    Daniels Manufacturing Corporation (DMC) DBS-2200-SB

    Other Tools
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    Mouser Electronics DBS-2200-SB 1
    • 1 $99.33
    • 10 $91.05
    • 100 $91.05
    • 1000 $91.05
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    Daniels Manufacturing Corporation (DMC) DBS-2202

    Other Tools 1/8" SNGL STEP BAND TOOL, GAGE, AND KEY
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    Mouser Electronics DBS-2202
    • 1 $4493.94
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    Daniels Manufacturing Corporation (DMC) DBS-2203

    Other Tools 1/8" BANDING TOOL SET
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    Mouser Electronics DBS-2203
    • 1 $5663.58
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    • 100 $5663.58
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    DBS22 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    CHA2066

    Abstract: MS11 MS12 MS21 MS22 PS11 PS12 PS22
    Text: CHA2066 10-16GHz Low Noise Amplifier GaAs Monolithic Microwave IC G1 Description NC G2 Vd 7272 The CHA2066 is a two-stage wide band monolithic low noise amplifier. The circuit is manufactured with a standard HEMT process : 0.25µm gate length, via holes through the substrate, air bridges


    Original     		PDF CHA2066 10-16GHz CHA2066 10-16GHz 20dBm DSCHA20660118 -27-Apr-00 MS11 MS12 MS21 MS22 PS11 PS12 PS22

    CHA2066

    Abstract: MS11 MS12 MS21 MS22 PS11 PS12 PS22 993 99f
    Text: CHA2066 10-16GHz Low Noise Amplifier GaAs Monolithic Microwave IC G1 Description NC G2 Vd 7272 The CHA2066 is a two-stage wide band monolithic low noise amplifier. The circuit is manufactured with a standard HEMT process : 0.25µm gate length, via holes through the substrate, air bridges


    Original     		PDF CHA2066 10-16GHz CHA2066 10-16GHz 20dBm DSCHA20661257 -14-Sept-01 MS11 MS12 MS21 MS22 PS11 PS12 PS22 993 99f

    fop 630

    Abstract: CHA3664 CHA3664-QAG smd 1513 sas 560
    Text: CHA3664-QAG RoHS COMPLIANT 5-21GHz Driver Amplifier GaAs Monolithic Microwave IC in SMD leadless package Description The CHA3664-QAG is a two-stage self-biased general purpose monolithic medium power amplifier. The circuit is manufactured with a power pHEMT process: 0.25µm gate length, via holes


    Original     		PDF CHA3664-QAG 5-21GHz CHA3664-QAG 5-21GHz 16L-QFN3x3 120mA DSCHA3664-QAG7333 fop 630 CHA3664 smd 1513 sas 560

    AN0020

    Abstract: CHA5014 9v23
    Text: CHA5014 RoHS COMPLIANT X Band HBT Driver Amplifier GaAs Monolithic Microwave IC Description The CHA5014 chip is a monolithic twostage medium power amplifier designed for X band applications. Moreover this amplifier is relevant for systems that require an output power weakly sensitive to


    Original     		PDF CHA5014 CHA5014 30dBm DSCHA50140112 AN0020 9v23

    CHA6517

    Abstract: fop 630
    Text: CHA6517 RoHS COMPLIANT 6-18GHz High Power Amplifier GaAs Monolithic Microwave IC Description The CHA6517 is a Dual channel monolithic three-stage GaAs high power amplifier designed for wide band applications. This device is manufactured using a UMS 0.25 µm Power pHEMT process,


    Original     		PDF CHA6517 6-18GHz CHA6517 18GHz DSCHA65179250 fop 630

    AN0017

    Abstract: CHA3693-QDG qfn 76 PACKAGE footprint
    Text: CHA3693-QDG RoHS COMPLIANT 20-30GHz Medium Power Amplifier GaAs Monolithic Microwave IC in SMD package Description CHA3693-QDG on a Board The CHA3693-QDG is a high gain broadband four stage monolithic medium power amplifier. It is designed for a wide range of applications from


    Original     		PDF CHA3693-QDG 20-30GHz CHA3693-QDG 20-30GHz 20dBm 330mA 28dBm 24L-QFN4x4 DSCHA3693-QDG7268 AN0017 qfn 76 PACKAGE footprint

    CHA2069-99F/00

    Abstract: CHA2069
    Text: CHA2069 RoHS COMPLIANT 18-31GHz Low Noise Amplifier GaAs Monolithic Microwave IC Description The circuit is a three-stage self biased wide band monolithic low noise amplifier. The circuit is manufactured with a standard pHEMT process: 0.25µm gate length, via


    Original     		PDF CHA2069 18-31GHz 18-31GHz 20dBm DSCHA20679273 8-Sep-99 CHA2069-99F/00 CHA2069

    MAR105

    Abstract: CHA2066 MS11 MS12 MS21 MS22 PS11 PS12 PS22 RF 3826
    Text: CHA2066 RoHS COMPLIANT 10-16GHz Low Noise Amplifier GaAs Monolithic Microwave IC G1 Description NC G2 Vd 7272 The CHA2066 is a two-stage wide band monolithic low noise amplifier. The circuit is manufactured with a standard pHEMT process: 0.25µm gate length, via


    Original     		PDF CHA2066 10-16GHz CHA2066 10-16GHz 20dBm DSCHA20660069 MAR105 MS11 MS12 MS21 MS22 PS11 PS12 PS22 RF 3826

    x-Band High Power Amplifier

    Abstract: 8205 MMIC X-band amplifier X-band GaAs pHEMT MMIC Chip x-band mmic 8205 A 8205 datasheet CHA6517 chip 8205 8205 6 pin
    Text: CHA6517 RoHS COMPLIANT 6 - 18 GHz High Power Amplifier GaAs Monolithic Microwave IC Description The CHA6517 is a Dual channel monolithic three-stage GaAs high power amplifier designed for wide band applications. This device is manufactured using a UMS 0.25 µm Power pHEMT process, including,


    Original     		PDF CHA6517 CHA6517 32dBm DSCHA6517-8205 x-Band High Power Amplifier 8205 MMIC X-band amplifier X-band GaAs pHEMT MMIC Chip x-band mmic 8205 A 8205 datasheet chip 8205 8205 6 pin

    nf46

    Abstract: CHA3666 CHA3666-SNF
    Text: CHA3666-SNF 5.8-16GHz Low Noise Amplifier GaAs Monolithic Microwave IC in hermetic package Description The CHA3666-SNF is a two-stage selfbiased wide band monolithic low noise amplifier. The circuit is manufactured with a standard P-HEMT process: 0.25µm gate length, via


    Original     		PDF CHA3666-SNF 8-16GHz CHA3666-SNF 8-16GHz 24dBm 16dBm 12L-Glass/metal DSCHA3666-SNF7208 nf46 CHA3666

    CHT4690-99F

    Abstract: CHT4690 DSCHT46905334
    Text: CHT4690 RoHS COMPLIANT 5-30GHz ATTENUATOR GaAs Monolithic Microwave IC Description The CHT4690 is a variable 5-30GHz attenuator designed for a wide range of applications, from military to commercial communication systems. The backside of the chip is both RF and DC grounds.


    Original     		PDF CHT4690 5-30GHz CHT4690 5-30GHz 25dBm DSCHT46905334 CHT4690-99F

    CHA5012

    Abstract: No abstract text available
    Text: CHA5012 X Band Driver Amplifier GaAs Monolithic Microwave IC Description Main Features The CHA5012 chip is a monolithic twostage medium power amplifier designed for X band applications. This device is manufactured using a GaInP HBT process, including, via holes through


    Original     		PDF CHA5012 CHA5012 DSCHA50126066

    x-Band High Power Amplifier

    Abstract: chip 8205 8205 8205 datasheet CHA6517 x-band power amplifier S 8205 fop 630
    Text: CHA6517 RoHS COMPLIANT 6 - 18 GHz High Power Amplifier GaAs Monolithic Microwave IC Description The CHA6517 is a Dual channel monolithic three-stage GaAs high power amplifier designed for wide band applications. This device is manufactured using a UMS 0.25 µm Power pHEMT process, including,


    Original     		PDF CHA6517 CHA6517 32dBm DSCHA6517-8205 x-Band High Power Amplifier chip 8205 8205 8205 datasheet x-band power amplifier S 8205 fop 630

    CHA2066

    Abstract: MS11 MS12 MS21 MS22 PS11 PS12 PS22
    Text: CHA2066 RoHS COMPLIANT 10-16GHz Low Noise Amplifier GaAs Monolithic Microwave IC G1 Description NC G2 Vd 7272 The CHA2066 is a two-stage wide band monolithic low noise amplifier. The circuit is manufactured with a standard HEMT process : 0.25µm gate length, via


    Original     		PDF CHA2066 10-16GHz CHA2066 10-16GHz 20dBm DSCHA20664281 MS11 MS12 MS21 MS22 PS11 PS12 PS22

    CHA5012

    Abstract: No abstract text available
    Text: CHA5012 X Band Driver Amplifier GaAs Monolithic Microwave IC Description The CHA5012 chip is a monolithic twostage medium power amplifier designed for X band applications. This device is manufactured using a GaInP HBT process, including via holes through the substrate and air bridges. A nitride


    Original     		PDF CHA5012 CHA5012 DSCHA50120179

    CHT4690

    Abstract: CHT4690-99F 99-F
    Text: CHT4690-99F RoHS COMPLIANT 5-30GHz ATTENUATOR GaAs Monolithic Microwave IC Description The CHT4690 is a variable 5-30GHz attenuator designed for a wide range of applications, from military to commercial communication systems. The backside of the chip is both RF and DC grounds. This helps


    Original     		PDF CHT4690-99F 5-30GHz CHT4690 5-30GHz 25dBm DSCHT46900211 CHT4690-99F 99-F

    10ghz variable attenuator

    Abstract: Fixed Attenuators Surface Mount 30dB AN0017 CHT4690-QAG RO4003 10ghz attenuator
    Text: CHT4690-QAG RoHS COMPLIANT 5-30GHz ATTENUATOR GaAs Monolithic Microwave IC in SMD leadless package Description The CHT4690-QAG is a variable 5-30GHz attenuator designed for a wide range of applications, from military to commercial communication systems. The circuit is manufactured with a


    Original     		PDF CHT4690-QAG 5-30GHz CHT4690-QAG 5-30GHz 25dBm 16Leads CHT4690QAG0211 10ghz variable attenuator Fixed Attenuators Surface Mount 30dB AN0017 RO4003 10ghz attenuator

    Untitled

    Abstract: No abstract text available
    Text: CHA6105 RoHS COMPLIANT 8-12GHz Driver Amplifier GaAs Monolithic Microwave IC Description VD1 The CHA6105 is a monolithic three-stage medium power amplifier designed for X-band applications. The driver provides typically 31.5dBm output power at saturation and is suitable


    Original     		PDF CHA6105 8-12GHz CHA6105 8-12GHz 700mA 100may DSCHA61050106

    Untitled

    Abstract: No abstract text available
    Text: CHA3665-QAG RoHS COMPLIANT 5-21GHz Driver Amplifier GaAs Monolithic Microwave IC in SMD leadless package Description The CHA3665-QAG is a two-stage general purpose monolithic medium power amplifier. It is designed for a wide range of applications, from military to commercial


    Original     		PDF CHA3665-QAG 5-21GHz CHA3665-QAG A3665 5-21GHz 120mA 16L-QFN3x3 DSCHA3665-QAG2258

    Untitled

    Abstract: No abstract text available
    Text: CHA2093 RoHS COMPLIANT 20-30GHz Low Noise Amplifier GaAs Monolithic Microwave IC Vd Description The CHA2093 is a two-stage wide band monolithic low noise amplifier. IN OUT Vg 2 Vg 1 It is supplied in chip form. Gain dB Main Features 1 Broad band performance 20-30GHz


    Original     		PDF CHA2093 20-30GHz CHA2093 20-30GHz 20dBm DSCHA20933279

    Untitled

    Abstract: No abstract text available
    Text: CHA3666-FAA 6-16GHz Low Noise Amplifier GaAs Monolithic Microwave IC in SMD package Description The CHA3666-FAA is a two-stage self-biased wide band monolithic low noise amplifier. The circuit is manufactured with a standard pHEMT process: 0.25µm gate length, via


    Original     		PDF CHA3666-FAA 6-16GHz V/80mA. A3666 6-16GHz DSCHA3666-FAA2356

    Untitled

    Abstract: No abstract text available
    Text: CHA3666 RoHS COMPLIANT 6-17GHz Low Noise Amplifier GaAs Monolithic Microwave IC Description VD1 VD2 The CHA3666 is a two-stage self biased wide band monolithic low noise amplifier. The circuit is manufactured with a standard pHEMT process: 0.25µm gate length, via


    Original     		PDF CHA3666 6-17GHz CHA3666 6-17GHz 26dBm 17dBm DSCHA3666-8108

    Untitled

    Abstract: No abstract text available
    Text: CHA1014 RoHS COMPLIANT 7-14GHz Low Noise Amplifier GaAs Monolithic Microwave IC Description The CHA1014 is a monolithic two-stage wide band low noise amplifier designed for a wide range of applications. The circuit is manufactured with a standard pHEMT process 0.25µm gate length, via


    Original     		PDF CHA1014 7-14GHz CHA1014 14GHz 10dBm DSCHA10140112

    Untitled

    Abstract: No abstract text available
    Text: CHA5014-99F RoHS COMPLIANT X Band HBT Driver Amplifier GaAs Monolithic Microwave IC Description The CHA5014 chip is a monolithic twostage medium power amplifier designed for X band applications. Moreover this amplifier is relevant for systems that require an output power weakly sensitive to


    Original     		PDF CHA5014-99F CHA5014 30dBm DSCHA50141097