DBS11 Search Results

CHA2066

Abstract: MS11 MS12 MS21 MS22 PS11 PS12 PS22
Contextual Info: CHA2066 10-16GHz Low Noise Amplifier GaAs Monolithic Microwave IC G1 Description NC G2 Vd 7272 The CHA2066 is a two-stage wide band monolithic low noise amplifier. The circuit is manufactured with a standard HEMT process : 0.25µm gate length, via holes through the substrate, air bridges

CHA2066

Abstract: MS11 MS12 MS21 MS22 PS11 PS12 PS22 993 99f
Contextual Info: CHA2066 10-16GHz Low Noise Amplifier GaAs Monolithic Microwave IC G1 Description NC G2 Vd 7272 The CHA2066 is a two-stage wide band monolithic low noise amplifier. The circuit is manufactured with a standard HEMT process : 0.25µm gate length, via holes through the substrate, air bridges

ps2 CIRCUIT diagram

Abstract: TCA 965 BP CMT58 CMT57 Hitachi DSA002730 k 1413
Contextual Info: Hitachi 16-Bit Single-Chip Microcomputer H8S/2194 Series, H8S/2194C Series, H8S/2194 F-ZTAT , H8S/2194C F-ZTAT™ H8S/2194, HD6432194, HD64F2194, H8S/2193, HD6432193 H8S/2192, HD6432192 H8S/2191, HD6432191 H8S/2194C, HD6432194C, HD64F2194C, H8S/2194B, HD6432194B

ps2 CIRCUIT diagram

Abstract: hd102 167 1 CMT54 HD12D TCA 785 IC ta222 TA023 CMT57 Hitachi DSA002714 HD100
Contextual Info: Hitachi Single-Chip Microcomputer H8S/2194 Series, H8S/2194F-ZTAT H8S/2194, HD6432194, HD64F2194, H8S/2193, HD6432193 H8S/2192, HD6432192 H8S/2191, HD6432191 Hardware Manual ADE-602-160 Ver 0.1 11/20/98 Hitachi, Ltd. Notice When using this document, keep the following in mind:

fop 630

Abstract: CHA3664 CHA3664-QAG smd 1513 sas 560
Contextual Info: CHA3664-QAG RoHS COMPLIANT 5-21GHz Driver Amplifier GaAs Monolithic Microwave IC in SMD leadless package Description The CHA3664-QAG is a two-stage self-biased general purpose monolithic medium power amplifier. The circuit is manufactured with a power pHEMT process: 0.25µm gate length, via holes

AN0020

Abstract: CHA5014 9v23
Contextual Info: CHA5014 RoHS COMPLIANT X Band HBT Driver Amplifier GaAs Monolithic Microwave IC Description The CHA5014 chip is a monolithic twostage medium power amplifier designed for X band applications. Moreover this amplifier is relevant for systems that require an output power weakly sensitive to

CHA6517

Abstract: fop 630
Contextual Info: CHA6517 RoHS COMPLIANT 6-18GHz High Power Amplifier GaAs Monolithic Microwave IC Description The CHA6517 is a Dual channel monolithic three-stage GaAs high power amplifier designed for wide band applications. This device is manufactured using a UMS 0.25 µm Power pHEMT process,

AN0017

Abstract: CHA3693-QDG qfn 76 PACKAGE footprint
Contextual Info: CHA3693-QDG RoHS COMPLIANT 20-30GHz Medium Power Amplifier GaAs Monolithic Microwave IC in SMD package Description CHA3693-QDG on a Board The CHA3693-QDG is a high gain broadband four stage monolithic medium power amplifier. It is designed for a wide range of applications from

CHA2069-99F/00

Abstract: CHA2069
Contextual Info: CHA2069 RoHS COMPLIANT 18-31GHz Low Noise Amplifier GaAs Monolithic Microwave IC Description The circuit is a three-stage self biased wide band monolithic low noise amplifier. The circuit is manufactured with a standard pHEMT process: 0.25µm gate length, via

MAR105

Abstract: CHA2066 MS11 MS12 MS21 MS22 PS11 PS12 PS22 RF 3826
Contextual Info: CHA2066 RoHS COMPLIANT 10-16GHz Low Noise Amplifier GaAs Monolithic Microwave IC G1 Description NC G2 Vd 7272 The CHA2066 is a two-stage wide band monolithic low noise amplifier. The circuit is manufactured with a standard pHEMT process: 0.25µm gate length, via

Contextual Info: KST2907 PNP EPITAXIAL SILICON TRANSISTOR GENERAL PURPOSE TRANSISTOR ABSOLUTE MAXIMUM RATINGS Ta=25°C i Symbol Rating Unit Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Collector Dissipation VcBO -6 0 -40 -5 -6 0 0

x-Band High Power Amplifier

Abstract: 8205 MMIC X-band amplifier X-band GaAs pHEMT MMIC Chip x-band mmic 8205 A 8205 datasheet CHA6517 chip 8205 8205 6 pin
Contextual Info: CHA6517 RoHS COMPLIANT 6 - 18 GHz High Power Amplifier GaAs Monolithic Microwave IC Description The CHA6517 is a Dual channel monolithic three-stage GaAs high power amplifier designed for wide band applications. This device is manufactured using a UMS 0.25 µm Power pHEMT process, including,

nf46

Abstract: CHA3666 CHA3666-SNF
Contextual Info: CHA3666-SNF 5.8-16GHz Low Noise Amplifier GaAs Monolithic Microwave IC in hermetic package Description The CHA3666-SNF is a two-stage selfbiased wide band monolithic low noise amplifier. The circuit is manufactured with a standard P-HEMT process: 0.25µm gate length, via

CHT4690-99F

Abstract: CHT4690 DSCHT46905334
Contextual Info: CHT4690 RoHS COMPLIANT 5-30GHz ATTENUATOR GaAs Monolithic Microwave IC Description The CHT4690 is a variable 5-30GHz attenuator designed for a wide range of applications, from military to commercial communication systems. The backside of the chip is both RF and DC grounds.

CHA5012

Contextual Info: CHA5012 X Band Driver Amplifier GaAs Monolithic Microwave IC Description Main Features The CHA5012 chip is a monolithic twostage medium power amplifier designed for X band applications. This device is manufactured using a GaInP HBT process, including, via holes through

HD12E

Abstract: pal 007B BF 331 TRANSISTORS marking 269-3 affb D106 SCR D22A marking code fds 690 das p71 0107 TDR25
Contextual Info: To all our customers Regarding the change of names mentioned in the document, such as Hitachi Electric and Hitachi XX, to Renesas Technology Corp. The semiconductor operations of Mitsubishi Electric and Hitachi were transferred to Renesas Technology Corporation on April 1st 2003. These operations include microcomputer, logic, analog

x-Band High Power Amplifier

Abstract: chip 8205 8205 8205 datasheet CHA6517 x-band power amplifier S 8205 fop 630
Contextual Info: CHA6517 RoHS COMPLIANT 6 - 18 GHz High Power Amplifier GaAs Monolithic Microwave IC Description The CHA6517 is a Dual channel monolithic three-stage GaAs high power amplifier designed for wide band applications. This device is manufactured using a UMS 0.25 µm Power pHEMT process, including,

CHA2066

Abstract: MS11 MS12 MS21 MS22 PS11 PS12 PS22
Contextual Info: CHA2066 RoHS COMPLIANT 10-16GHz Low Noise Amplifier GaAs Monolithic Microwave IC G1 Description NC G2 Vd 7272 The CHA2066 is a two-stage wide band monolithic low noise amplifier. The circuit is manufactured with a standard HEMT process : 0.25µm gate length, via

CHA3801-99F

Abstract: IC 7448 ACTIVE HIGH ic 7808
Contextual Info: CHA3801-99F RoHS COMPLIANT L-Band Low Noise Amplifier GaAs Monolithic Microwave IC Description The CHA3801-99F is an L-Band LNA monolithic circuit including an active bias network. Furthermore a protection network is included in order to allow high input power

CHA5012

Contextual Info: CHA5012 X Band Driver Amplifier GaAs Monolithic Microwave IC Description The CHA5012 chip is a monolithic twostage medium power amplifier designed for X band applications. This device is manufactured using a GaInP HBT process, including via holes through the substrate and air bridges. A nitride

CHT4690

Abstract: CHT4690-99F 99-F
Contextual Info: CHT4690-99F RoHS COMPLIANT 5-30GHz ATTENUATOR GaAs Monolithic Microwave IC Description The CHT4690 is a variable 5-30GHz attenuator designed for a wide range of applications, from military to commercial communication systems. The backside of the chip is both RF and DC grounds. This helps

10ghz variable attenuator

Abstract: Fixed Attenuators Surface Mount 30dB AN0017 CHT4690-QAG RO4003 10ghz attenuator
Contextual Info: CHT4690-QAG RoHS COMPLIANT 5-30GHz ATTENUATOR GaAs Monolithic Microwave IC in SMD leadless package Description The CHT4690-QAG is a variable 5-30GHz attenuator designed for a wide range of applications, from military to commercial communication systems. The circuit is manufactured with a

Contextual Info: CHA6105 RoHS COMPLIANT 8-12GHz Driver Amplifier GaAs Monolithic Microwave IC Description VD1 The CHA6105 is a monolithic three-stage medium power amplifier designed for X-band applications. The driver provides typically 31.5dBm output power at saturation and is suitable

Contextual Info: CHA3665-QAG RoHS COMPLIANT 5-21GHz Driver Amplifier GaAs Monolithic Microwave IC in SMD leadless package Description The CHA3665-QAG is a two-stage general purpose monolithic medium power amplifier. It is designed for a wide range of applications, from military to commercial