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    DBD10C Search Results

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    DBD10C Price and Stock

    Rochester Electronics LLC DBD10C-E

    DBD10 - 1A SINGLE-PHASE BRIDGE R
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    DigiKey DBD10C-E Bulk 761
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    DBD10C-E Bulk 761
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    Aptina Imaging DBD10C-E

    Rectifier Bridge Diode Single 200V 1A 4-Pin
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    Verical DBD10C-E 69,954 879
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    onsemi DBD10C-E

    DBD10 - 1A Single-Phase Bridge Rectifier '
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    Rochester Electronics DBD10C-E 69,954 1
    • 1 $0.3792
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    SANYO Semiconductor Co Ltd DBD10C-E

    DBD10 - 1A Single-Phase Bridge Rectifier '
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Rochester Electronics DBD10C-E 15,760 1
    • 1 $0.3792
    • 10 $0.3792
    • 100 $0.3564
    • 1000 $0.3223
    • 10000 $0.3223
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    DBD10C Datasheets (2)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    DBD10C Sanyo Semiconductor Diffused Junction Silicon Diode 1.0A Single-Phase Original PDF
    DBD10C-E Sanyo Semiconductor DIODE RECTIFIER BRIDGE SINGLE 200V 1A 4DIP4 Original PDF

    DBD10C Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    dbd10g

    Abstract: No abstract text available
    Text: Ordering number : ENN7030A DBD10 Diffused Junction Silicon Diode DBD10 1.0A Single-Phase Bridge Rectifier Features • • • Package Dimensions Plastic molded structure. Peak reverse voltage : VRM=200V, 600V. Average rectified current : IO=1.0A. unit : mm


    Original
    PDF ENN7030A DBD10 DBD10] DBD10-TM max15° dbd10g

    DBD10

    Abstract: DBD10C DBD10G
    Text: Ordering number : ENN7030A DBD10 Diffused Junction Silicon Diode DBD10 1.0A Single-Phase Bridge Rectifier Features • • • Package Dimensions Plastic molded structure. Peak reverse voltage : VRM=200V, 600V. Average rectified current : IO=1.0A. unit : mm


    Original
    PDF ENN7030A DBD10 DBD10] DBD10-TM max15° DBD10 DBD10C DBD10G

    DBD10G

    Abstract: DBD10 DBD10C 70302 N0901
    Text: 注文コード No. N 7 0 3 0 A DBD10 三洋半導体データシート 半導体ニューズ No.7030 とさしかえてください。 DBD10 特長 シリコン拡散接合形 1.0A 単相ブリッジ整流素子 ・樹脂モールド構造。 ・せん頭逆電圧:VRM=200V, 600V。


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    PDF DBD10 DBD10C DBD10G max15° SANYODBD10-TM N0901 DBD10G DBD10 DBD10C 70302

    DBD10G

    Abstract: DBD10 DBD10C 70302
    Text: 注文コード No. N 7 0 3 0 A DBD10 三洋半導体データシート 半導体ニューズ No.7030 とさしかえてください。 DBD10 特長 シリコン拡散接合形 1.0A 単相ブリッジ整流素子 ・樹脂モールド構造。 ・せん頭逆電圧:VRM=200V, 600V。


    Original
    PDF DBD10 DBD10C DBD10G max15° SANYODBD10-TM N0901 DBD10G DBD10 DBD10C 70302

    DBD10G

    Abstract: bridge RECTIFIER GI DBD10 DBD10C
    Text: Ordering number : ENN7030A DBD10 Diffused Junction Silicon Diode DBD10 1.0A Single-Phase Bridge Rectifier Features • • • Package Dimensions Plastic molded structure. Peak reverse voltage : VRM=200V, 600V. Average rectified current : IO=1.0A. unit : mm


    Original
    PDF ENN7030A DBD10 DBD10] DBD10-TM max15° DBD10G bridge RECTIFIER GI DBD10 DBD10C

    Untitled

    Abstract: No abstract text available
    Text: Ordering number : ENN7030A DBD10 Diffused Junction Silicon Diode DBD10 1.0A Single-Phase Bridge Rectifier Features • • • Package Dimensions Plastic molded structure. Peak reverse voltage : VRM=200V, 600V. Average rectified current : IO=1.0A. unit : mm


    Original
    PDF ENN7030A DBD10 DBD10] DBD10-TM max15Â

    DBC10

    Abstract: DBD10G-E D2005 DBC10C DBC10E DBC10G DBD10C-E
    Text: Ordering number : E I 0 0 0 8 Announcement Concerning the Discontinuation of Certain Diode Products Thank you for using SANYO semiconductor products. The following SANYO semiconductor products are being discontinued. Please make a note of this if you use these or related products.


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    PDF DBC10C DBC10E DBC10G DBC10 DBD10C-E DBD10G-E D2005 DBC10C DBC10E DBC10G DBD10C-E

    DBD10

    Abstract: DBD10C DBD10G
    Text: Ordering number : ENN7030 DBD10 Diffused Junction Silicon Diode DBD10 1.0A Single-Phase Bridge Rectifier Features • • • Package Dimensions Plastic molded structure. Peak reverse voltage : VRM=200V, 600V. Average rectified current : IO=1.0A. unit : mm


    Original
    PDF ENN7030 DBD10 DBD10] DBD10-TM max15° DBD10 DBD10C DBD10G

    Untitled

    Abstract: No abstract text available
    Text: Ordering number: ENN7030~j Diffused Junction Silicon Diode DBD10 Is m I ÿ o i 1.OA Single-Phase Bridge Rectifier Features • Plastic m olded structure. • Peak reverse voltage : V R M -200V , 600V. • A verage rectified c u rre n t: lo -I.O A . Package Dimensions


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    PDF ENN7030 DBD10 -200V