DBA SOT23 Search Results

Contextual Info: 19-1230; Rev 2a; 6/97 KIT ATION EVALU E L B AVAILA 1 GH z, Low -Pow e r, SOT 2 3 , Curre nt -Fe e dba c k Am plifie rs w it h Shut dow n The MAX4223–MAX4228 are ideal for professional video applications, with differential gain and phase errors of 0.01% and 0.02°, 0.1dB gain flatness of 300MHz, and a

bkd transistor

Abstract: Zener diode 1N4146 1n4146 zener NPN transistor 310 Dba sot23
Contextual Info: SPRAGUE/SEMICO ND GROUP IME D • 0513050 0QG47TQ 7 ■ T-^-öl SOT23 TRANSISTOR TYPES Type No. BC807-16 BC807-2S BC807-40 BC817-16 BC817-25 BC817-40 BC846A BC846B BC847A BC847B BC847C BC848A BC848B BC848C BC849B BC849C BC850B BC850C BC856A BC8S6B BC857A BC857B

ceramic capacitor footprint dimension

Abstract: step-up led converter AP3029 CDRH5D28RNP-220NC Step-up 36V voltage to current converter 4 to 20ma circuit 4 to 20mA schematic
Contextual Info: Demo Board Manual -DB-A White LED Step-Up Converter AP3029 Content: 1. Description 2. Specification 3. Schematic of the Demo Board 4. Operation 5. PCB Layout 6. Photo View of the Demo Board 7. PCB Dimension 8. BOM 9. Test Result May. 2007 Rev. 1.1 1 BCD Semiconductor Manufacturing Limited

302v smd component

Abstract: 302V smd diode ss14 AP3015 SS14 schottky smd Step-up 12V to 15V SS14 DIODE schottky bcd sw ss14 schottky
Contextual Info: Demo Board Manual - DB-A Micro Power Step-Up DC/DC Converter AP3015 Content: 1. Description 2. Specification 3. Schematic of the Demo Board 4. PCB Layout 5. Photo View of the Demo Board 6. PCB Dimensions 7. BOM 8. Test Result August. 2006 Rev. 1.2 1 BCD Semiconductor Manufacturing Limited

AP3009

Abstract: step-up led converter
Contextual Info: Demo Board Manual - DB-A White LED Step-Up Converter AP3009 Content: 1. Description 2. Specification 3. Schematic of the Demo Board 4. PCB Layout 5. Photo View of the Demo Board 6. PCB Dimension 7. BOM 8. Test Result September. 2006 Rev. 2.1 1 BCD Semiconductor Manufacturing Limited

Z6 DIODE

Contextual Info: Zener Diode ctparts.com CTZ84C Series Not shown at actual size. 2.4V ~ 39V RoHS Compliant CHARACTERISTICS Description: SOT-23 Plastic-Encapsulated Zener Diode Features: Planar Die Construction. 350mW Power Dissipation. Zener Voltages from 2.4V ~ 39V. Ideally Suited for Automated

PJDLC05C

Abstract: marking dba ti suppressor 5v
Contextual Info: PJDLC05C-03 VOLTAGE 5.0 Volts POWER 250 Watts ULTRA LOW CAPACITANCE DUAL TRANSIET VOLTAGE SUPPRESSOR FOR HIGH SPEED DATA LINES This transient overvoltage suppressor is intended to prodect sensitive equipment againset electrostatic discharge events as well to offer a minmum lnsertion loss

GSD2004A

Contextual Info: GSD2004A Dual Common-Anode Small-Signal Switching Diode TO-236AB SOT-23 .122 (3.1) .110 (2.8) .016 (0.4) Top View New ct u d Pro Mounting Pad Layout 0.031 (0.8) 3 .056 (1.43) .052 (1.33) 0.035 (0.9) 1 0.037 (0.95) 0.037 (0.95) .045 (1.15) .037 (0.95) .007 (0.175)

88199

Abstract: GSD2004A
Contextual Info: GSD2004A Vishay Semiconductors New Product formerly General Semiconductor Dual Common-Anode Small-Signal Switching Diode Mounting Pad Layout TO-236AB SOT-23 0.031 (0.8) .122 (3.1) .110 (2.8) .016 (0.4) Top View 0.035 (0.9) .056 (1.43) .052 (1.33) 3 1 Dimensions in inches

Contextual Info: PJDLC05C-03 VOLTAGE POWER 5.0 Volts 250 Watts 0.006 0.15 MIN. ULTRA LOW CAPACITANCE DUAL TRANSIET VOLTAGE SUPPRESSOR FOR HIGH SPEED DATA LINES 0.120(3.04) This transient overvoltage suppressor is intended to protect sensitive equipment against electrostatic discharge events as well to offer a

Contextual Info: Philips Semiconductors Product specification NPN medium frequency transistor BF840 FEATURES PINNING • Low cu rrent max. 25 mA PIN • Low voltage (max. 40 V). APPLICATIONS DESCRIPTION 1 base 2 e m itte r 3 co lle cto r • AM m ixers • IF am plifiers in A M /FM receivers.

Contextual Info: PJDLC05C-03 VOLTAGE POWER 5.0 Volts SOT-23 250 Watts Unit inch mm ULTRA LOW CAPACITANCE DUAL TRANSIET VOLTAGE SUPPRESSOR FOR HIGH SPEED DATA LINES 0.120(3.04) This transient overvoltage suppressor is intended to protect sensitive equipment against electrostatic discharge events as well to offer a

PJDLC05C

Contextual Info: PJDLC05C-03 VOLTAGE POWER 5.0 Volts SOT-23 250 Watts Unit：inch mm ULTRA LOW CAPACITANCE DUAL TRANSIET VOLTAGE SUPPRESSOR FOR HIGH SPEED DATA LINES This transient overvoltage suppressor is intended to protect sensitive equipment against electrostatic discharge events as well to offer a

Contextual Info: PJDLC05C-03 VOLTAGE POWER 5 Volts 250 Watts SUPPRESSOR FOR HIGH SPEED DATA LINES 0.006 0.15 MIN. ULTRA LOW CAPACITANCE DUAL TRANSIET VOLTAGE 0.120(3.04) 0.110(2.80) This transient overvoltage suppressor is intended to protect sensitive equipment against electrostatic discharge events as well to offer a

GSD2004A

Abstract: GSD2004A-GS08 GSD2004A-GS18
Contextual Info: GSD2004A VISHAY Vishay Semiconductors Dual Common-Anode Small-Signal High-Voltage Switching Diode Features 2 • Silicon Epitaxial Planar Diode • Fast switching dual common-anode diode, especially suited for applications requiring high voltage capability

Contextual Info: GSD2004A-V Vishay Semiconductors Dual Common-Anode Small-Signal High-Voltage Switching Diode Features • Silicon Epitaxial Planar Diode • Fast switching dual common-anode e3 diode, especially suited for applications requiring high voltage capability • Lead Pb -free component

Contextual Info: GSD2004A VISHAY Vishay Semiconductors Dual Common-Anode Small-Signal High-Voltage Switching Diode Features 2 • Silicon Epitaxial Planar Diode • Fast switching dual common-anode diode, especially suited for applications requiring high voltage capability

Contextual Info: GSD2004A VISHAY Vishay Semiconductors Dual Common-Anode Small-Signal Switching Diode Features 2 • Silicon Epitaxial Planar Diode • Fast switching dual common-anode diode, especially suited for applications requiring high voltage capability 3 1 1 3 Mechanical Data

Contextual Info: GSD2004A VISHAY Vishay Semiconductors Dual Common-Anode Small-Signal High-Voltage Switching Diode Features 2 • Silicon Epitaxial Planar Diode • Fast switching dual common-anode diode, especially suited for applications requiring high voltage capability

GSD2004A-V-GS08

Abstract: GSD2004A-V-GS18
Contextual Info: GSD2004A-V Vishay Semiconductors Dual Common-Anode Small-Signal High-Voltage Switching Diode Features • Silicon Epitaxial Planar Diode • Fast switching dual common-anode e3 diode, especially suited for applications requiring high voltage capability • Lead Pb -free component

Contextual Info: GSD2004A-V Vishay Semiconductors Dual Common-Anode Small-Signal High-Voltage Switching Diode Features • Silicon Epitaxial Planar Diode • Fast switching dual common-anode e3 diode, especially suited for applications requiring high voltage capability • Lead Pb -free component

Contextual Info: GSD2004A-V Vishay Semiconductors Dual Common-Anode Small-Signal High-Voltage Switching Diode Features 2 • Silicon Epitaxial Planar Diode • Fast switching dual common-anode diode, especially suited for applications requiring high voltage capability • AEC-Q101 qualified

GSD2004A-V-GS08

Abstract: GSD2004A-V-GS18
Contextual Info: GSD2004A-V Vishay Semiconductors Dual Common-Anode Small-Signal High-Voltage Switching Diode Features • Silicon Epitaxial Planar Diode • Fast switching dual common-anode e3 diode, especially suited for applications requiring high voltage capability • Lead Pb -free component

Contextual Info: GSD2004A-V Vishay Semiconductors Dual Common-Anode Small-Signal High-Voltage Switching Diode Features 2 • Silicon Epitaxial Planar Diode • Fast switching dual common-anode diode, especially suited for applications requiring high voltage capability • AEC-Q101 qualified