DB3 DB4
Abstract: EQUIVALENT NO. OF DB3 DIAC pin diagram of diac db3 diac db3 specifications pin diagram of diac DIAC DB3 EQUIVALENT DB3 ST Diac DB 3 diac DB3 application note Diac st 083
Text: DB3 DB4 SMDB3 DIAC FEATURES • ■ VBO : 32V and 40V LOW BREAKOVER CURRENT DO-35 DB3 and DB4 DESCRIPTION Functioning as a trigger diode with a fixed voltage reference, the DB3/DB4 series can be used in conjunction with triacs for simplified gate control
|
Original
|
DO-35
OT-23
OT-23
DB3 DB4
EQUIVALENT NO. OF DB3 DIAC
pin diagram of diac db3
diac db3 specifications
pin diagram of diac
DIAC DB3 EQUIVALENT
DB3 ST
Diac DB 3
diac DB3 application note
Diac st 083
|
PDF
|
diac db3 specifications
Abstract: pin diagram of 40v diac DB3 ST diode db3 st ST E DB3 MARKING DB4 DIAC DB3 EQUIVALENT NO. OF DB3 DIAC pin diagram of diac T410
Text: DB3 DB4 SMDB3 DIAC FEATURES • ■ VBO : 32V and 40V LOW BREAKOVER CURRENT DO-35 DB3 and DB4 DESCRIPTION Functioning as a trigger diode with a fixed voltage reference, the DB3/DB4 series can be used in conjunction with triacs for simplified gate control
|
Original
|
DO-35
OT-23
OT-23
diac db3 specifications
pin diagram of 40v diac
DB3 ST
diode db3 st
ST E DB3
MARKING DB4
DIAC DB3
EQUIVALENT NO. OF DB3 DIAC
pin diagram of diac
T410
|
PDF
|
pin diagram of diac db3
Abstract: DB3 ST 40v diac DIAC DB3 specifications pin diagram of 40v diac db3 diac diode db3 st pin diagram of diac ST E DB3 db3 MARKING
Text: DB3 DB4 SMDB3 DIAC FEATURES • ■ VBO : 32V and 40V LOW BREAKOVER CURRENT DO-35 DB3 and DB4 DESCRIPTION Functioning as a trigger diode with a fixed voltage reference, the DB3/DB4 series can be used in conjunction with triacs for simplified gate control
|
Original
|
DO-35
OT-23
OT-23
pin diagram of diac db3
DB3 ST
40v diac
DIAC DB3 specifications
pin diagram of 40v diac
db3 diac
diode db3 st
pin diagram of diac
ST E DB3
db3 MARKING
|
PDF
|
diac db3 specifications
Abstract: 40v diac pin diagram of diac db3 DB3 ST pin diagram of 40v diac ST E DB3 2A DB3 diac 083 DIAC DB3 diode db3 st
Text: DB3 DB4 SMDB3 DIAC FEATURES • ■ VBO : 32V and 40V LOW BREAKOVER CURRENT DO-35 DB3 and DB4 DESCRIPTION Functioning as a trigger diode with a fixed voltage reference, the DB3/DB4 series can be used in conjunction with triacs for simplified gate control
|
Original
|
DO-35
OT-23
OT-23
diac db3 specifications
40v diac
pin diagram of diac db3
DB3 ST
pin diagram of 40v diac
ST E DB3
2A DB3
diac 083
DIAC DB3
diode db3 st
|
PDF
|
DB31
Abstract: db3 diac diac 5v vbo DIAC DIAC DB3
Text: DB3 , DB4 , DB31 DB3 , DB4 , DB31 Bidirectional Si-Trigger-Diodes DIAC Bidirektionale Si-Triggerdioden (DIAC) Version 2012-06-12 Breakover voltage Durchbruchspannung 3.9 Type 62.5 Ø 1.9±0.07 28 . 45 V Peak pulse current Max. Triggerimpuls ±2A Glass case
|
Original
|
DO-35
OD-27
DB31
db3 diac
diac 5v vbo
DIAC
DIAC DB3
|
PDF
|
diac dB3
Abstract: db3 diac DIAC DB3 EQUIVALENT diac DB3 application note datasheet DIAC diac 5v SOD-27 DIAC DB4 DIAC diac 5v vbo
Text: DB3 . DB4 DB3 . DB4 Bidirectional Si-Trigger-Diodes DIAC Bidirektionale Si-Triggerdioden (DIAC) Version 2006-04-27 Breakover voltage Durchbruchspannung 3.9 Type 62.5 Ø 1.9 28 . 45 V Peak pulse current Max. Triggerimpuls ±2A Glass case Glas-Gehäuse
|
Original
|
DO-35
OD-27
diac dB3
db3 diac
DIAC DB3 EQUIVALENT
diac DB3 application note
datasheet DIAC
diac 5v
SOD-27
DIAC DB4
DIAC
diac 5v vbo
|
PDF
|
Untitled
Abstract: No abstract text available
Text: DB3 . DB4 DB3 . DB4 Bidirectional Si-Trigger-Diodes DIAC Bidirektionale Si-Triggerdioden (DIAC) Version 2006-04-27 Breakover voltage Durchbruchspannung 3.9 Type 62.5 Ø 1.9 28 . 45 V Peak pulse current Max. Triggerimpuls ±2A Glass case Glas-Gehäuse
|
Original
|
DO-35
OD-27
|
PDF
|
Untitled
Abstract: No abstract text available
Text: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company SILICON DIAC BIDIRECTIONAL TRIGGER DIODES GLASS PASSIVATED PNPN DEVICE DB3, DB4 DO- 35 Glass Axial Package Functioning as a Trigger Diode with a Fixed Voltage Reference, DB3/DB4 can be
|
Original
|
100Hz)
C-120
190402E
|
PDF
|
Untitled
Abstract: No abstract text available
Text: DB4 DIAC Features 1. VBO: 40V 2. Breakover voltage range: 35 to 45V Applications Functioning as a trigger diode with a fixed voltage reference, the DB4 can be used in conjunction with triacs for simplified gate control circuits or as a starting element in fluorescent lamp ballasts.
|
Original
|
1-Nov-2006
|
PDF
|
Untitled
Abstract: No abstract text available
Text: DB4 DIAC Features 1. VBO: 40V 2. Breakover voltage range: 35 to 45V Applications Functioning as a trigger diode with a fixed voltage reference, the DB4 can be used in conjunction with triacs for simplified gate control circuits or as a starting element in fluorescent lamp ballasts.
|
Original
|
1-Sep-2009
DO-35
|
PDF
|
SOD-27
Abstract: DB31 DB32 diac 5v vbo
Text: DB3 , DB4 , DB31 , DB32 DB3 , DB4 , DB31 , DB32 Bidirectional Si-Trigger-Diodes DIAC Bidirektionale Si-Triggerdioden (DIAC) Version 2012-07-03 Breakover voltage Durchbruchspannung ±0.4 3.9 Type 62.5 ±3 Ø 1.9 ±0.1 Ø max 0.5 28 . 45 V Peak pulse current
|
Original
|
DO-35
OD-27
SOD-27
DB31
DB32
diac 5v vbo
|
PDF
|
DIAC DB3
Abstract: 190402E diac DB3 Do 35 diode db3
Text: IS/ISO 9002 Lic# QSC/L- 000019.2 Continental Device India Limited An IS/ISO 9002 and IECQ Certified Manufacturer SILICON DIAC BIDIRECTIONAL TRIGGER DIODES GLASS PASSIVATED PNPN DEVICE DB3, DB4 DO- 35 Glass Axial Package Functioning as a Trigger Diode with a Fixed Voltage Reference, DB3/DB4 can be
|
Original
|
100Hz)
C-120
190402E
DIAC DB3
190402E
diac DB3 Do 35
diode db3
|
PDF
|
Untitled
Abstract: No abstract text available
Text: DB3,DB4,DB6 SILICON BIDIRECTIONAL DIACS POWER DISSIPATION 150 mW DO- 41 FEATURES ●Three way layer two terminal, axial lead , hermetically sealed diacs are designed specifically for triggering thyrisitors .The demonstrate low breakover current. The breakover symmetry is within three volts DB3,DB4
|
Original
|
DO-41case.
100Hz
|
PDF
|
220V reversing motor control
Abstract: db3 Ib 100HZ DIA DB3
Text: DB3,DB4,DB6 SILICON BIDIRECTIONAL DIACS POWER DISSIPATION 150 mW DO- 41 FEATURES ●Three way layer two terminal, axial lead , hermetically sealed diacs are designed specifically for triggering thyrisitors .The demonstrate low breakover current. The breakover symmetry is within three volts DB3,DB4
|
Original
|
DO-41case.
100Hz
220V reversing motor control
db3 Ib
100HZ
DIA DB3
|
PDF
|
|
|
diac 40V
Abstract: diac DIAc DB4 db4 diac diode db4
Text: DB4 DIAC Features 1. VBO: 40V 2. Breakover voltage range: 35 to 45V Applications Functioning as a trigger diode with a fixed voltage reference, the DB4 can be used in conjunction with triacs for simplified gate control circuits or as a starting element in fluorescent lamp ballasts.
|
Original
|
|
PDF
|
diac DB3 application note
Abstract: DB3 application note DIAC DO35
Text: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company SILICON DIAC BIDIRECTIONAL TRIGGER DIODES GLASS PASSIVATED PNPN DEVICE DB3, DB4 DO- 35 Glass Axial Package Functioning as a Trigger Diode with a Fixed Voltage Reference, DB3/DB4 can be
|
Original
|
100Hz)
C-120
190402E
diac DB3 application note
DB3 application note
DIAC DO35
|
PDF
|
Untitled
Abstract: No abstract text available
Text: BL GALAXY ELECTRICAL DB3.DB4 SILICON BIDIRECTIONAL DIACS VOLTAGE RANGE: 28-45 V FEATURES The three layer,two termnal,axial lead,hermetically 1111sealed diacs are designed specifically for triggering 1111thyristors.They demonstrate low breakover current at
|
Original
|
1111sealed
1111thyristors
1111breakover
1111current
1111volts
DO-35
100Hz
|
PDF
|
bl db3 galaxy
Abstract: db3 bl DB3 galaxy bl db3 bl db4 Galaxy Semiconductor db3 DIACS db3 a-405 A-405
Text: BL GALAXY ELECTRICAL DB3.DB4 SILICON BIDIRECTIONAL DIACS FEATURES The three layer,two termnal,axial lead,hermetically 1111sealed diacs are designed specifically for triggering 1111thyristors.They demonstrate low breakover current at 1111breakover voltage as they withstand peak pulse
|
Original
|
1111sealed
1111thyristors
1111breakover
1111current
1111volts
100Hz
bl db3 galaxy
db3 bl
DB3 galaxy
bl db3
bl db4
Galaxy Semiconductor db3
DIACS
db3 a-405
A-405
|
PDF
|
DIACS
Abstract: DB3 DB4 diac db3 specifications DIAC 5 VOLT
Text: HITANO ENTERPRISE CORP. DB3 THRU DB4 TECHNICAL SPECIFICATIONS OF BIDIRECTIONAL DIODE THYRISTORS DIACS FEATURES * Glass passivalted three-layer for triggering thyristors. * Low breakover current at breakover voltage. * For use in thyristor phase-control circuit for lampdimming,
|
Original
|
DO-35
MIL-STD-202E,
DIACS
DB3 DB4
diac db3 specifications
DIAC 5 VOLT
|
PDF
|
diode DB3
Abstract: db6 do-35 diac 083 diagram DC34
Text: DB3/DC34/DB4/DB6 SILICON BIDIRECTIONAL DIAC FEATURE DO-35 GLASS The three layer ,two terminal,axial lead,hermetically sealed diacs are designed specifically for triggering thyristors.They 0.079(2.0) MAX demonstrate low breakover current at breakover voltage as
|
Original
|
DB3/DC34/DB4/DB6
DO-35
DB3/DC34/DB4/DB6
100Hz
diode DB3
db6 do-35
diac 083
diagram
DC34
|
PDF
|
Untitled
Abstract: No abstract text available
Text: BL GALAXY ELECTRICAL DB3.DB4 SILICON BIDIRECTIONAL DIACS FEATURES The three layer,two termnal,axial lead,hermetically 1111sealed diacs are designed specifically for triggering 1111thyristors.They demonstrate low breakover current at 1111breakover voltage as they withstand peak pulse
|
Original
|
1111sealed
1111thyristors
1111breakover
1111current
1111volts
100Hz
|
PDF
|
bl db3 galaxy
Abstract: db3 bl 100HZ 05R05 DB3 galaxy
Text: BL GALAXY ELECTRICAL DB3.DB4 SILICON BIDIRECTIONAL DIACS FEATURES The three layer,two termnal,axial lead,hermetically 1111sealed diacs are designed specifically for triggering 1111thyristors.They demonstrate low breakover current at 1111breakover voltage as they withstand peak pulse
|
Original
|
1111sealed
1111thyristors
1111breakover
1111current
1111volts
100HZ
bl db3 galaxy
db3 bl
100HZ
05R05
DB3 galaxy
|
PDF
|
DB3 ST
Abstract: diac db3 db3 diac range EQUIVALENT NO. OF DB3 DIAC db3 diac DIAC-Triac datasheet DIAC diac DB3 application note DIAC BR 100 DIAC-Triac applications
Text: DB3, DB4 SILICON BIDIRECTIONAL DIACS The glass passivated, three-layer, two terminal, axial lead, hermetically sealed diacs are designed specifically for triggering thyristors. They demonstrate low breakover current at breakover voltage as they withstand peak pulse current.
|
Original
|
|
PDF
|
Untitled
Abstract: No abstract text available
Text: DB3/DB4 Silicon Bidirectional Diacs VOLTAGE RANGE: 28-45 V A-405 Features The three layer,two termnal,axial lead,hermetically 1111sealed diacs are designed specifically for triggering 1111thyristors.They demonstrate low breakover current at 1111breakover voltage as they withstand peak pulse
|
Original
|
1111sealed
1111thyristors
1111breakover
1111current
1111volts
120Hz
500KD
100Hz
|
PDF
|
