DATA SHEET TRANSISTOR 2030 Search Results

2SC1275

Abstract: 2sc1927
Contextual Info: DATA SHEET SILICON TRANSISTOR 2SC1927 NPN SILICON EPITAXIAL DUAL TRANSISTOR FOR DIFFERENTIAL AMPLIFIER AND ULTRA HIGH SPEED SWITCHING INDUSTRIAL USE DESCRIPTION in millimeters consists of two chips equivalent to the 2SC1275, and is designed for 5.0 MIN.

AN569

Abstract: MTP4N80E MTP4N80
Contextual Info: MOTOROLA Order this document by MTP4N80E/D SEMICONDUCTOR TECHNICAL DATA  Data Sheet TMOS E-FET. Power Field Effect Transistor Designer's MTP4N80E Motorola Preferred Device N–Channel Enhancement–Mode Silicon Gate TMOS POWER FET 4.0 AMPERES 800 VOLTS

AN569

Abstract: MTP4N80E
Contextual Info: MOTOROLA Order this document by MTP4N80E/D SEMICONDUCTOR TECHNICAL DATA Designer’s Data Sheet TMOS E−FET. Power Field Effect Transistor MTP4N80E Motorola Preferred Device N−Channel Enhancement−Mode Silicon Gate TMOS POWER FET 4.0 AMPERES 800 VOLTS

Contextual Info: MOTOROLA O rder this docum ent by M TP4N80E/D SEMICONDUCTOR TECHNICAL DATA D esigner’s Data Sheet M TP4N80E TMOS E-FET ™ Power Field Effect Transistor Motorola Preferred Device N-Channel Enhancement-Mode Silicon Gate This high voltage MOSFET uses an advanced termination

Contextual Info: 10aucti, Dnc. TELEPHONE: 973 376-2922 (212)227-6005 FAX: (973) 376-8960 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. Designer's Data Sheet TMOS E-FET ™ MTP4N80E Power Field Effect Transistor N-Channel Enhancement-Mode Silicon Gate This high voltage MOSFET uses an advanced termination

j497

Contextual Info: Advance Data Sheet Product Description SL-1020 The SL-1020 is Stanford Microdevices’ high-linearity 10W LDMOS transistor designed for base station applications at or near 2000 MHz. Rated for minimum output power of 10W, it is ideal for CDMA, TDMA, GSM, FM, Single or Multi-Carrier Power

LDMOS

Abstract: SL-10202 J436 SL1020
Contextual Info: Advance Data Sheet Product Description SL-1020 The SL-1020 is Stanford Microdevices’ high-linearity 10W LDMOS transistor designed for base station applications at or near 2000 MHz. Rated for minimum output power of 10W, it is ideal for CDMA, TDMA, GSM, FM, Single or Multi-Carrier Power

Contextual Info: Advance Data Sheet Product Description SL-1020 The SL-1020 is Stanford Microdevices’ high-linearity 10W LDMOS transistor designed for base station applications at or near 2000 MHz. Rated for minimum output power of 10W, it is ideal for CDMA, TDMA, GSM, FM, Single or Multi-Carrier Power

MAX1864

Abstract: MAX1864TEEE MAX1864UEEE MAX1865 MAX1865TEEP MAX1865UEEP mosfet b4
Contextual Info: KIT ATION EVALU E L B AVAILA 19-2030; Rev 0; 4/01 xDSL/Cable Modem Triple/Quintuple Output Power Supplies The MAX1864/MAX1865 power-supply controllers are designed to address cost-conscious applications such as cable modem Consumer Premise Equipment CPE ,

MAX1864

Abstract: MAX1864TEEE MAX1864UEEE MAX1865 MAX1865TEEP MAX1865UEEP 15DL20
Contextual Info: 19-2030; Rev 0; 4/01 xDSL/Cable Modem Triple/Quintuple Output Power Supplies Features The MAX1864/MAX1865 power-supply controllers are designed to address cost-conscious applications such as cable modem Consumer Premise Equipment CPE , xDSL CPE, and set-top boxes. Operating off a low-cost,

2W3905

Contextual Info: KIT ATION EVALU E L B AVAILA 19-2030; Rev 0; 4/01 xDSL/Cable Modem Triple/Quintuple Output Power Supplies The MAX1864/MAX1865 power-supply controllers are designed to address cost-conscious applications such as cable modem Consumer Premise Equipment CPE ,

Contextual Info: 19-2030; Rev 0; 4/01 xDSL/Cable Modem Triple/Quintuple Output Power Supplies Features The MAX1864/MAX1865 power-supply controllers are designed to address cost-conscious applications such as cable modem Consumer Premise Equipment CPE , xDSL CPE, and set-top boxes. Operating off a low-cost,

mj16010

Abstract: MJ16012 MJ16012 MOTOROLA MJ16012 equivalent
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA M J16010 M JW 16010 Designer’s Data Sheet SWITCHMODE Series NPN Silicon Power Transistors M J16012* These transistors are designed for high-voltage, high-speed, power switching in In d u c tiv e c irc u its w h e re fa ll tim e is c ritic a l. T h e y a re p a rtic u la rly s u ite d fo r

MTB4N80E

Abstract: AN569 SMD310 824 mosfet
Contextual Info: MOTOROLA Order this document by MTB4N80E/D SEMICONDUCTOR TECHNICAL DATA  Data Sheet TMOS E-FET. High Energy Power FET D2PAK for Surface Mount Designer's MTB4N80E Motorola Preferred Device TMOS POWER FET 4.0 AMPERES 800 VOLTS RDS on = 3.0 OHM N–Channel Enhancement–Mode Silicon Gate

P4n80e

Abstract: 4n80e 557 b
Contextual Info: M OTOROLA SEMICONDUCTOR TECHNICAL DATA D esigner’s Data Sheet M T P 4N 80E TM O S E -F E T ™ P o w er Field E ffe c t T ran sisto r M otorola Preferred Device N-Channel Enhancement-Mode Silicon Gate This high vo lta g e M O S F E T uses an ad vanced te rm inatio n

G4IDC5D

Abstract: OPTO 22 g4idc5 G4IDC5G IEEE-472 G4IDC5K G4IDC24
Contextual Info: I/O MODULE G4 DIGITAL DC INPUT DATA SHEET Form 253-990215 Description page 1/4 Part Number Description G4IDC5 G4 DC Input 10-32 VDC, 5 VDC Logic G4IDC5B G4 DC Input 4-16 VDC, 5 VDC Logic High Speed G4 DC Input 2.5-28 VDC, 5 VDC Logic Opto 22’s G4 DC input modules are used to detect

g4iac5

Abstract: IEEE-472 ac drive schematic
Contextual Info: I/O MODULES G4 DIGITAL AC INPUT DATA SHEET Form 251-010411 Description Opto 22’s G4 AC input modules are used to detect on/off AC voltage levels. Each module provides up to 4,000 Vrms of optical-isolation between field inputs and the logic output of the circuit.

nt 101 MICROWAVE thermostat

Abstract: BC transistor series catalog refrigerator PTC relay nt 101 thermostat PTRL posistor PTH7M BF transistor series catalog Electronic IH rice cooker PTH6M murata
Contextual Info: !Note • This PDF catalog is downloaded from the website of Murata Manufacturing co., ltd. Therefore, it’s specifications are subject to change or our products in it may be discontinued without advance notice. Please check with our sales representatives or product engineers before ordering.

Contextual Info: MOTOROLA Order this document by MTB4N80E/D SEMICONDUCTOR TECHNICAL DATA D esigner’s Data Sheet MTB4N80E TMOS E-FET ™ High Energy Power FET D2PAK for Surface Mount Motorola Preferred Device TMOS POWER FET 4.0 AMPERES 800 VOLTS N-Channel Enhancement-Mode Silicon Gate

Contextual Info: Data Sheet October 2, 2009 Austin LynxTM 24V:Non-isolated Power Module: 20-30Vdc input; 5.0 to 15.0Vdc Output; 70W RoHS Compliant Features ƒ Compliant to RoHS EU Directive 2002/95/EC -Z versions ƒ Compliant to ROHS EU Directive 2002/95/EC with lead solder exemption (non-Z versions)

Contextual Info: Data Sheet October 16, 2007 Austin LynxTM 24V:Non-isolated Power Module: 20-30Vdc input; 5.0 to 15.0Vdc Output; 70W RoHS Compliant Features Compliant to RoHS EU Directive 2002/95/EC -Z versions Compliant to ROHS EU Directive 2002/95/EC with lead solder exemption (non-Z versions)

axb0

Abstract: configuration of ic 7819 AXB070X AXB070X43
Contextual Info: Data Sheet March 31, 2008 Austin LynxTM 24V:Non-isolated Power Module: 20-30Vdc input; 5.0 to 15.0Vdc Output; 70W RoHS Compliant Features ƒ Compliant to RoHS EU Directive 2002/95/EC -Z versions ƒ Compliant to ROHS EU Directive 2002/95/EC with lead solder exemption (non-Z versions)

Contextual Info: Data Sheet February 15, 2007 Austin LynxTM 24V:Non-isolated Power Module: 20-30Vdc input; 5.0 to 15.0Vdc Output; 70W RoHS Compliant Features Compliant to RoHS EU Directive 2002/95/EC -Z versions Compliant to ROHS EU Directive 2002/95/EC with lead solder exemption (non-Z versions)

DK-7575

Abstract: 02ATEX
Contextual Info: Electronic Terminal Block with Optocoupler 1/2 Data sheet 56 mm / 2.2 in Optocoupler for DIN 35 rail A2 - 0V A1 + A RL +24 V 91 mm / 3.58 in Item-No. Description Input DC 24 V, Output DC 24 V / 500 mA negative switching Pack.-unit pcs 859-708 • Optocoupler for medium switching powers.