DARLINGTON TRANSISTORS Search Results

DARLINGTON TRANSISTORS Result Highlights (5)

Part	Manufacturer	Description
TTC5886A	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns
TTA2097	Toshiba Electronic Devices & Storage Corporation	PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns
XPQR8308QB	Toshiba Electronic Devices & Storage Corporation	N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL
XPQ1R00AQB	Toshiba Electronic Devices & Storage Corporation	N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL
TK190U65Z	Toshiba Electronic Devices & Storage Corporation	MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL

DARLINGTON TRANSISTORS Datasheets Context Search

Catalog Datasheet	MFG & Type	PDF	Document Tags
darlington Abstract: "Darlington Transistors" Darlington Transistors Transistors Text: Back to Bipolar Darlington Transistors Back to Bipolar Darlington Transistors	Original	PDF
2N6055 Abstract: No abstract text available Text: 2N6055 Darlington complementary silicon power transistor 15.26 Transistors Darlington . Page 1 of 1 Enter Your Part # Home Part Number: 2N6055 Online Store 2N6055 Diodes Darlington complementary silicon power transistor Transistors Integrated Circuits Optoelectronics	Original	PDF	2N6055 2N6055 com/2n6055
2N6056 Abstract: ALL SILICON COMPLEMENTARY transistors darlington Text: 2N6056 Darlington complementary silicon power transistor 8.63 Transistors Darlington T. Page 1 of 2 Enter Your Part # Home Part Number: 2N6056 Online Store 2N6056 Diodes Darlington complementary silicon power transistor Transistors Integrated Circuits Optoelectronics	Original	PDF	2N6056 2N6056 com/2n6056 ALL SILICON COMPLEMENTARY transistors darlington
2n222 TRANSISTOR Abstract: Ferroxcube core MR826 equivalent 1N493 transistor 2n222 Text: MJB5742T4G NPN Silicon Power Darlington Transistors The Darlington transistors are designed for high−voltage power switching in inductive circuits. Features http://onsemi.com • These Devices are Pb−Free and are RoHS Compliant POWER DARLINGTON TRANSISTORS	Original	PDF	MJB5742T4G MJB5742/D 2n222 TRANSISTOR Ferroxcube core MR826 equivalent 1N493 transistor 2n222
1N493 Abstract: transistor 2N222 Text: MJB5742T4G NPN Silicon Power Darlington Transistors The Darlington transistors are designed for high−voltage power switching in inductive circuits. Features http://onsemi.com • These Devices are Pb−Free and are RoHS Compliant POWER DARLINGTON TRANSISTORS	Original	PDF	MJB5742T4G MJB5742/D 1N493 transistor 2N222
Untitled Abstract: No abstract text available Text: MJB5742T4G NPN Silicon Power Darlington Transistors The Darlington transistors are designed for high−voltage power switching in inductive circuits. Features http://onsemi.com • These Devices are Pb−Free and are RoHS Compliant POWER DARLINGTON TRANSISTORS	Original	PDF	MJB5742T4G MJB5742/D
B5742G Abstract: high voltage fast switching transistor for ignition coil drivers application of diode 2n222 2n222 TRANSISTOR Text: MJB5742T4G NPN Silicon Power Darlington Transistors The Darlington transistors are designed for high−voltage power switching in inductive circuits. Features http://onsemi.com • These Devices are Pb−Free and are RoHS Compliant POWER DARLINGTON TRANSISTORS	Original	PDF	MJB5742T4G MJB5742/D B5742G high voltage fast switching transistor for ignition coil drivers application of diode 2n222 2n222 TRANSISTOR
MJE1090 Abstract: No abstract text available Text: MJE1090 PNP Darlington Transistor 26.87 Transistors Darlington Transistors PNP Amer. Page 1 of 1 Enter Your Part # Home Part Number: MJE1090 Online Store MJE1090 Diodes PNP Darlington Transistor Transistors Enter code INTER3 at checkout.* Integrated Circuits	Original	PDF	MJE1090 MJE1090 O-127var com/mje1090
Untitled Abstract: No abstract text available Text: 2N6294 NPN Darlington Transistor 4.94 Transistors Darlington Transistors NPN Americ. Page 1 of 1 Enter Your Part # Home Part Number: 2N6294 Online Store 2N6294 Diodes NPN Darlington Transistor Transistors Enter code INTER3 at checkout.* Integrated Circuits	Original	PDF	2N6294 2N6294 com/2n6294
MJE5740 Abstract: MJE5742 MJE-5740 MJE5740G MJE5742G Text: MJE5740, MJE5742 MJE5742 is a Preferred Device NPN Silicon Power Darlington Transistors The MJE5740 and MJE5742 Darlington transistors are designed for high−voltage power switching in inductive circuits. Features • Pb−Free Packages are Available* POWER DARLINGTON	Original	PDF	MJE5740, MJE5742 MJE5742 MJE5740 MJE5740 MJE-5740 MJE5740G MJE5742G
2N998 Abstract: NPN POWER DARLINGTON TRANSISTORS Text: 2N998 NPN Darlington Transistor 9.00 Transistors Darlington Transistors NPN America. Page 1 of 1 Enter Your Part # Home Part Number: 2N998 Online Store 2N998 Diodes NPN Darlington Transistor Transistors Enter code INTER3 at checkout.* Integrated Circuits	Original	PDF	2N998 2N998 com/2n998 NPN POWER DARLINGTON TRANSISTORS
MJ10021 equivalent Abstract: SUS CIRCUIT 1N4937 MJ10020 MJ10021 tektronix 475 Text: ON Semiconductort MJ10020 MJ10021 SWITCHMODEt Series NPN Silicon Power Darlington Transistors with Base-Emitter Speedup Diode 60 AMPERE NPN SILICON POWER DARLINGTON TRANSISTORS 200 AND 250 VOLTS 250 WATTS The MJ10020 and MJ10021 Darlington transistors are designed for	Original	PDF	MJ10020 MJ10021 MJ10020 MJ10021 r14525 MJ10020/D MJ10021 equivalent SUS CIRCUIT 1N4937 tektronix 475
2SD418 Abstract: TIP33C equivalent k 3436 transistor IR647 TIP121 transistor buv18a BU108 2SC1086 tip122 motor control 2N6023 Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MJ10000  Data Sheet Designer's SWITCHMODE Series NPN Silicon Power Darlington Transistor 20 AMPERE NPN SILICON POWER DARLINGTON TRANSISTORS 350 VOLTS 175 WATTS The MJ10000 Darlington transistor is designed for high–voltage, high–speed,	Original	PDF	MJ10000 204AA TIP73B TIP74 TIP74A TIP74B TIP75 TIP75A TIP75B 2SD418 TIP33C equivalent k 3436 transistor IR647 TIP121 transistor buv18a BU108 2SC1086 tip122 motor control 2N6023
MJ10006 Abstract: MJ10007 1N4937 mj10006 equivalent Text: ON Semiconductort MJ10007 * SWITCHMODEt Series NPN Silicon Power Darlington Transistors with Base-Emitter Speedup Diode *ON Semiconductor Preferred Device 10 AMPERE NPN SILICON POWER DARLINGTON TRANSISTORS 400 VOLTS 150 WATTS The MJ10007 Darlington transistor is designed for high–voltage,	Original	PDF	MJ10007 MJ10007 10Nlit r14525 MJ10007/D MJ10006 1N4937 mj10006 equivalent

BU806 Abstract: No abstract text available Text: MOTOROLA Order this document by BU806/D SEMICONDUCTOR TECHNICAL DATA BU806 NPN Darlington Power Transistor 8.0 AMPERE DARLINGTON NPN POWER TRANSISTORS 60 WATTS 200 VOLTS This Darlington transistor is a high voltage, high speed device for use in horizontal	Original	PDF	220AB BU806
TIP147T Abstract: tip142t Text: TIP142T TIP147T COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS n n n n n SGS-THOMSON PREFERRED SALESTYPES MONOLITHIC DARLINGTON CONFIGURATION LOW VOLTAGE HIGH CURRENT HIGH GAIN DESCRIPTION The TIP142T is a silicon epitaxial-base NPN power transistors in monolithic Darlington	Original	PDF	TIP142T TIP147T O-220 TIP147T. O-220 TIP147T
MJ10005 equivalent Abstract: MJ10005 transistor mj10005 1N4937 MJ10004 Text: ON Semiconductort MJ10005 * SWITCHMODEt Series NPN Silicon Power Darlington Transistor with Base-Emitter Speedup Diode *ON Semiconductor Preferred Device 20 AMPERE NPN SILICON POWER DARLINGTON TRANSISTORS 400 VOLTS 175 WATTS The MJ10005 Darlington transistor is designed for high–voltage,	Original	PDF	MJ10005 MJ10005 100Nlit r14525 MJ10005/D MJ10005 equivalent transistor mj10005 1N4937 MJ10004
MJ10016 Abstract: MJ10015 1N4937 Text: ON Semiconductort MJ10015 MJ10016 SWITCHMODEt Series NPN Silicon Power Darlington Transistors with Base-Emitter Speedup Diode 50 AMPERE NPN SILICON POWER DARLINGTON TRANSISTORS 400 AND 500 VOLTS 250 WATTS The MJ10015 and MJ10016 Darlington transistors are designed for	Original	PDF	MJ10015 MJ10016 MJ10015 MJ10016 r14525 MJ10015/D 1N4937
Untitled Abstract: No abstract text available Text: Back to Bipolar Darlington Transistors PNP NPN 2N6050 2N6057 2N6051* 2N6058* 2N6052* 2N6059* *also available a JAN, JANTX, JANTXV DARLINGTON COMPLEMENTARY SILICON POWER TRANSISTORS DARLINGTON 12 AMPERE . . . designed for general-purpose am plifier and low frequency	OCR Scan	PDF	2N6050 2N6057 2N6051* 2N6058* 2N6052* 2N6059* 2N6050, 2N6051, 2N6058
sf.c amplifier Abstract: CASE TO-101 TDB3003 Transistors sfc2018m sfc 2046 SFC2046EC SFC2790C SFC2790M Text: Lin ea r integrated c ircu its - transistors arrays C irc u its in tég rés linéaires - réseau x d e tran sisto rs Type Type Case B o ite r Darlington stage + 2 NPN transistors Etage Darlington + 2 transistors NPN TO-101 S F .C 2036 M Dual Darlington D ouble Darlington	OCR Scan	PDF	O-101 CB-1281 O-101 O-116 TDB3001 TDB3002 sf.c amplifier CASE TO-101 TDB3003 Transistors sfc2018m sfc 2046 SFC2046EC SFC2790C SFC2790M
P1M marking code sot 223 Abstract: marking codes transistors sot-223 sot-89 marking code 5A SMD CODE SOT89 lc MARKING 5A SOT-89 sot-23 marking LC smd marking rc SOT23 SOT89 MARKING CODE 5A SMD transistors marking code 2.F AS3 SOT223 Text: 11 SMD Darlington Transistors SMD® Darlington Transistors Description Mechanical Data Philips Components Darlington transistors provide high input impedance and thus high gain by virtue of two seriesintegrated transistors on a single chip. High current versions	OCR Scan	PDF	PXTA14 PXTA64 PZTA13 PZTA14 PZTA63 PZTA64 OT-23 OT-89 OT-223 P1M marking code sot 223 marking codes transistors sot-223 sot-89 marking code 5A SMD CODE SOT89 lc MARKING 5A SOT-89 sot-23 marking LC smd marking rc SOT23 SOT89 MARKING CODE 5A SMD transistors marking code 2.F AS3 SOT223
Untitled Abstract: No abstract text available Text: Back to Bipolar Darlington Transistors NSG2556 PNP 20 AMPERE PNP SILICON DARLINGTON POWER TRANSISTOR P N P DARLINGTON POWER TRANSISTOR General Purpose Amplifier Low Frequency Switching High DC Current Gain Monolithic Construction Built in Base Emitter Shunt Resistors	OCR Scan	PDF	NSG2556
mj10000 Abstract: MJ10001 Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MJ10000 Designer's Data Sheet SWITCHMODE Series NPN Silicon Power Darlington Transistor 20 AMPERE NPN SILICON POWER DARLINGTON TRANSISTORS 350 VOLTS 175 WATTS The M J10000 Darlington transistor is designed for high-voltage, high-speed,	OCR Scan	PDF	MJ10000 MJ10000 MJ10001
Untitled Abstract: No abstract text available Text: MOTOROLA Order this document by BU806/D SEMICONDUCTOR TECHNICAL DATA BU806 NPN Darlington Power Transistor 8.0 AMPERE DARLINGTON NPN POWER TRANSISTORS 60 WATTS 200 VOLTS This Darlington transistor is a high voltage, high speed device for use in horizontal	OCR Scan	PDF	BU806/D BU806 -220A 21A-06 O-220AB

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DARLINGTON TRANSISTORS Search Results

DARLINGTON TRANSISTORS Result Highlights (5)

DARLINGTON TRANSISTORS Datasheets Context Search

darlington

2N6055

2N6056

2n222 TRANSISTOR

1N493

Untitled

B5742G

MJE1090

Untitled

MJE5740

2N998

MJ10021 equivalent

2SD418

MJ10006

BU806

TIP147T

MJ10005 equivalent

MJ10016

Untitled

sf.c amplifier

P1M marking code sot 223

Untitled

mj10000

Untitled