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    DARLINGTON SOT23 PNP Search Results

    DARLINGTON SOT23 PNP Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    2SA1213 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / VCEO=-50 V / IC=-2 A / hFE=70~240 / VCE(sat)=-0.5 V / PW-Mini Visit Toshiba Electronic Devices & Storage Corporation
    2SA1943 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / VCEO=-230 V / IC=-15 A / hFE=55~160 / VCE(sat)=-3.0 V / TO-3P(L) Visit Toshiba Electronic Devices & Storage Corporation
    TTA012 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / VCEO=-80 V / IC=-4 A / hFE=100~200 / VCE(sat)=-0.22 V / tf=35 ns / PW-Mini Visit Toshiba Electronic Devices & Storage Corporation
    TTA004B Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / VCEO=-160 V / IC=-1.5 A / hFE=140~280 / VCE(sat)=-0.5 V / TO-126N Visit Toshiba Electronic Devices & Storage Corporation
    TTA2070 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / VCEO=-50 V / IC=-1 A / hFE=200~500 / VCE(sat)=-0.20V / tf=90 ns / PW-Mini Visit Toshiba Electronic Devices & Storage Corporation

    DARLINGTON SOT23 PNP Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    FMMTA63

    Abstract: FMMTA13 FMMTA14 FMMTA64 FZTA63 DSA003703
    Text: FMMTA63 FMMTA64 SOT23 PNP SILICON PLANAR DARLINGTON TRANSISTORS ISSUE 2 – MARCH 1995 ✪ PARTMARKING DETAIL – FMMTA63 - Z2U FMMTA64 - Z2V E C COMPLEMENTARY TYPES – FMMTA63 - FMMTA13 FMMTA64 - FMMTA14 B SOT23 ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL VALUE


    Original     		FMMTA63 FMMTA64 FMMTA63 FMMTA64 FMMTA13 FMMTA14 -10mA, FMMTA13 FMMTA14 FZTA63 DSA003703 PDF

    FMMTA14

    Abstract: FMMTA64 FZTA64
    Text: SOT23 PNP SILICON PLANAR DARLINGTON TRANSISTOR FMMTA64 ✪ ISSUE 3 – MARCH 2001 PARTMARKING DETAIL – FMMTA64 - Z2V E C COMPLEMENTARY TYPES – FMMTA64 - FMMTA14 B SOT23 ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL VALUE UNIT Collector-Base Voltage Collector-Emitter Voltage


    Original     		FMMTA64 FMMTA64 FMMTA14 -100mA, -50mA, 20MHz -10mA, FMMTA14 FZTA64 PDF

    Untitled

    Abstract: No abstract text available
    Text: ZXTP05120HFF 120V, SOT23F, PNP medium power Darlington transistor Summary BVCEO > -120V IC cont = -1A VCE(sat) < 1.1V @ 1A PD = 1.5W Complementary part number ZXTN04120HFF Description C This high performance PNP Darlington transistor is housed in the small outline SOT23 flat package for applications


    Original     		ZXTP05120HFF OT23F, -120V ZXTN04120HFF ZXTP05120HFFTA D-81541 PDF

    marking 1F7

    Abstract: ZXTN04120HFF TS16949 ZXTP05120HFF ZXTP05120HFFTA
    Text: ZXTP05120HFF 120V, SOT23F, PNP medium power Darlington transistor Summary BVCEO > -120V IC cont = -1A VCE(sat) < 1.1V @ 1A PD = 1.5W Complementary part number ZXTN04120HFF Description C This high performance PNP Darlington transistor is housed in the small outline SOT23 flat package for applications


    Original     		ZXTP05120HFF OT23F, -120V ZXTN04120HFF ZXTP05120HFFTA D-81541 marking 1F7 ZXTN04120HFF TS16949 ZXTP05120HFF ZXTP05120HFFTA PDF

    Untitled

    Abstract: No abstract text available
    Text: A Product Line of Diodes Incorporated BCV46 60V PNP DARLINGTON TRANSISTOR IN SOT23 Features Mechanical Data • • • • • • • • • • • • • BVCEO > -60V Darlington Transistor hFE > 10k @ 100mA for high gain IC = -500mA High Continuous Collector Current


    Original     		BCV46 100mA -500mA BCV47 AEC-Q101 J-STD-020 MIL-STD-202, DS33002 PDF

    Untitled

    Abstract: No abstract text available
    Text: SMBTA63, SMBTA64 PNP Silicon Darlington Transistors 3  High collector current  High DC current gain 2 1 Type Marking Pin Configuration SMBTA63 s2U 1=B 2=E 3=C SOT23 SMBTA64 s2V 1=B 2=E 3=C SOT23 VPS05161 Package Maximum Ratings Parameter Symbol Collector-emitter voltage


    Original     		SMBTA63, SMBTA64 SMBTA63 VPS05161 EHP00364 EHP00215 EHP00415 EHP00365 Aug-20-2001 PDF

    S2V 80

    Abstract: SMBTA63 SMBTA64
    Text: SMBTA63, SMBTA64 PNP Silicon Darlington Transistors 3  High collector current  High DC current gain 2 1 Type Marking Pin Configuration SMBTA63 s2U 1=B 2=E 3=C SOT23 SMBTA64 s2V 1=B 2=E 3=C SOT23 VPS05161 Package Maximum Ratings Parameter Symbol Collector-emitter voltage


    Original     		SMBTA63, SMBTA64 SMBTA63 VPS05161 EHP00364 EHP00215 EHP00415 EHP00365 Nov-30-2001 S2V 80 SMBTA63 SMBTA64 PDF

    Untitled

    Abstract: No abstract text available
    Text: SMBTA63, SMBTA64 PNP Silicon Darlington Transistors 3  High collector current  High DC current gain 2 1 Type Marking Pin Configuration SMBTA63 s2U 1=B 2=E 3=C SOT23 SMBTA64 s2V 1=B 2=E 3=C SOT23 VPS05161 Package Maximum Ratings Parameter Symbol Collector-emitter voltage


    Original     		SMBTA63, SMBTA64 VPS05161 SMBTA63 PDF

    Untitled

    Abstract: No abstract text available
    Text: BCV27, BCV47 NPN Silicon Darlington Transistors 3  For general AF applications  High collector current  High current gain  Complementary types: BCV26, BCV46 PNP 2 1 Type Marking Pin Configuration BCV27 FFs 1=B 2=E 3=C SOT23 BCV47 FGs 1=B 2=E 3=C SOT23


    Original     		BCV27, BCV47 BCV26, BCV46 VPS05161 BCV27 BCV47 PDF

    Untitled

    Abstract: No abstract text available
    Text: BCV26, BCV46 PNP Silicon Darlington Transistors 3  For general AF applications  High collector current  High current gain  Complementary types: BCV27, BCV47 NPN 2 1 Type Marking Pin Configuration BCV26 FDs 1=B 2=E 3=C SOT23 BCV46 FEs 1=B 2=E 3=C SOT23


    Original     		BCV26, BCV46 BCV27, BCV47 VPS05161 BCV26 BCV46 PDF

    Marking Code FGs

    Abstract: No abstract text available
    Text: BCV27, BCV47 NPN Silicon Darlington Transistors 3  For general AF applications  High collector current  High current gain  Complementary types: BCV26, BCV46 PNP 2 1 Type Marking Pin Configuration BCV27 FFs 1=B 2=E 3=C SOT23 BCV47 FGs 1=B 2=E 3=C SOT23


    Original     		BCV27, BCV47 BCV26, BCV46 VPS05161 BCV27 BCV47 Marking Code FGs PDF

    BCV26

    Abstract: BCV27 BCV46 BCV47
    Text: BCV26, BCV46 PNP Silicon Darlington Transistors 3  For general AF applications  High collector current  High current gain  Complementary types: BCV27, BCV47 NPN 2 1 Type Marking Pin Configuration BCV26 FDs 1=B 2=E 3=C SOT23 BCV46 FEs 1=B 2=E 3=C SOT23


    Original     		BCV26, BCV46 BCV27, BCV47 BCV26 VPS05161 EHP00295 BCV26 BCV27 BCV46 BCV47 PDF

    fgs npn

    Abstract: BCV26 BCV27 BCV46 BCV47
    Text: BCV27, BCV47 NPN Silicon Darlington Transistors 3  For general AF applications  High collector current  High current gain  Complementary types: BCV26, BCV46 PNP 2 1 Type Marking Pin Configuration BCV27 FFs 1=B 2=E 3=C SOT23 BCV47 FGs 1=B 2=E 3=C SOT23


    Original     		BCV27, BCV47 BCV26, BCV46 BCV27 VPS05161 EHP00304 fgs npn BCV26 BCV27 BCV46 BCV47 PDF

    Untitled

    Abstract: No abstract text available
    Text: BCV26, BCV46 PNP Silicon Darlington Transistors 3  For general AF applications  High collector current  High current gain  Complementary types: BCV27, BCV47 NPN 2 1 Type Marking Pin Configuration BCV26 FDs 1=B 2=E 3=C SOT23 BCV46 FEs 1=B 2=E 3=C SOT23


    Original     		BCV26, BCV46 BCV27, BCV47 VPS05161 BCV26 BCV46 PDF

    Untitled

    Abstract: No abstract text available
    Text: BCV26 BCV46 SOT23 PNP SILICON PLANAR DARLINGTON TRANSISTORS ISSUE 3 – SEPTEMBER 1995 FEATURES * Low saturation voltage COMPLEMENTARY TYPE – PARTMARKING DETAILS – E C BCV26 - BCV27 BCV46 - BCV47 BCV26 - ZFD BCV46 - ZFE B ABSOLUTE MAXIMUM RATINGS. PARAMETER


    Original     		BCV26 BCV46 BCV26 BCV27 BCV46 BCV47 PDF

    BCV46

    Abstract: BCV26 BCV27 BCV47 DSA003671
    Text: BCV26 BCV46 SOT23 PNP SILICON PLANAR DARLINGTON TRANSISTORS ISSUE 3 – SEPTEMBER 1995 FEATURES * Low saturation voltage COMPLEMENTARY TYPE – PARTMARKING DETAILS – E C BCV26 - BCV27 BCV46 - BCV47 BCV26 - ZFD BCV46 - ZFE B ABSOLUTE MAXIMUM RATINGS. PARAMETER


    Original     		BCV26 BCV46 BCV26 BCV27 BCV46 BCV47 BCV27 BCV47 DSA003671 PDF

    Untitled

    Abstract: No abstract text available
    Text: BCV26 IS OBSOLETE PLEASE USE MMBTA64 BCV46 IS CURRENTLY ACTIVE BCV26 BCV46 SOT23 PNP SILICON PLANAR DARLINGTON TRANSISTORS ISSUE 3 – SEPTEMBER 1995 FEATURES * Low saturation voltage COMPLEMENTARY TYPE – PARTMARKING DETAILS – E C BCV26 - BCV27 BCV46 - BCV47


    Original     		BCV26 MMBTA64 BCV46 BCV27 BCV47 PDF

    FMMT634Q

    Abstract: No abstract text available
    Text: A Product Line of Diodes Incorporated FMMT634Q 100V NPN DARLINGTON TRANSISTOR IN SOT23 Description Mechanical Data This Bipolar Junction Transistor BJT has been designed to meet the stringent requirements of Automotive Applications. •  Features 


    Original     		FMMT634Q 900mA 625mW FMMT734Q AEC-Q101 DS37051 FMMT634Q PDF

    transistor Ic 1A datasheet

    Abstract: IC 1A datasheet FMMT634 FMMT734 DSA003702
    Text: “SUPER SOT” SOT23 PNP SILICON POWER DARLINGTON TRANSISTOR FMMT734 ISSUE 1 – AUGUST 1997 FEATURES * 625mW POWER DISSIPATION * Very High hFE at High Current 5A * Extremely Low VCE(sat) at High Current (1A) E C COMPLEMENTARY TYPE – FMMT634 B PARTMARKING DETAIL – 734


    Original     		FMMT734 625mW FMMT634 100mA 100ms 100us transistor Ic 1A datasheet IC 1A datasheet FMMT634 FMMT734 DSA003702 PDF

    marking 2u

    Abstract: marking code 10 sot23 S2V 3 BCW66 SMBTA64
    Text: SMBTA64 PNP Silicon Darlington Transistors 3 • High collector current • High DC current gain 2 1 Type Marking SMBTA64 s2V Pin Configuration 1=B 2=E VPS05161 Package 3=C SOT23 Maximum Ratings Parameter Symbol Collector-emitter voltage VCES 30 Collector-base voltage


    Original     		SMBTA64 VPS05161 marking 2u marking code 10 sot23 S2V 3 BCW66 SMBTA64 PDF

    BCV26

    Abstract: BCV27 BCV46 BCV47
    Text: BCV26, BCV46 PNP Silicon Darlington Transistors • For general AF applications • High collector current 2 3 • High current gain 1 • Complementary types: BCV27, BCV47 NPN Type Marking Pin Configuration Package BCV26 FDs 1=B 2=E 3=C SOT23 BCV46 FEs


    Original     		BCV26, BCV46 BCV27, BCV47 BCV26 BCV26 BCV27 BCV46 BCV47 PDF

    Untitled

    Abstract: No abstract text available
    Text: BCV26 BCV46 SOT23 PNP SILICON PLANAR DARLINGTON TRANSISTORS ISSUE 3 - SEPTEMBER 1995_ FEATURES * Low saturation voltage COMPLEMENTARY TYPE - BCV26 - BCV27 PARTMARKING DETAILS - BCV46 - BCV47 BCV26 - ZFD BCV46-ZFE ABSOLUTE MAXIMUM RATINGS. PARAMETER


    OCR Scan     		BCV26 BCV46 BCV26 BCV27 BCV46 BCV47 BCV46-ZFE PDF

    Untitled

    Abstract: No abstract text available
    Text: FMMTA63 FMMTA64 SOT23 PNP SILICON PLANAR DARLINGTON TRANSISTORS ISSUE 2 -MARCH 1995_O_ PARTMARKING D ETA IL- FMMTA63 - Z2U FMMTA64 - Z2V COMPLEMENTARY T Y P ES - FMMTA63 - FMMTA13 FMMTA64 - FMMTA14 ABSOLUTE MAXIMUM RATINGS. SYMBOL VALUE


    OCR Scan     		FMMTA63 FMMTA64 FMMTA63 FMMTA64 FMMTA13 FMMTA14 -100mA, PDF

    Untitled

    Abstract: No abstract text available
    Text: • bbS3131 0024537 1A7 H A P X N AUER PHILIPS/DISCRETE b?E T> BCV27 BCV47 ;v SILICON PLANAR DARLINGTON TRANSISTOR N-P-N silicon planar darlington transistor in a plastic SOT23 envelope. P-N-P complement is BCV26/46. QUICK REFERENCE DATA BCV27 BCV47 Collector-emitter voltage open base


    OCR Scan     		bbS3131 BCV27 BCV47 BCV26/46. PDF