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    DARLINGTON SOT23 NPN Search Results

    DARLINGTON SOT23 NPN Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TBAW56 Toshiba Electronic Devices & Storage Corporation Switching Diode, 80 V, 0.215 A, SOT23 Visit Toshiba Electronic Devices & Storage Corporation
    ULS2003H/R Rochester Electronics LLC ULS2003 - High Voltage High Current Darlington Array Visit Rochester Electronics LLC Buy
    ULS2022R/B Rochester Electronics LLC ULS2022 - High Voltage High Current Darlington Array Visit Rochester Electronics LLC Buy
    MX0912B251Y Rochester Electronics LLC MX0912B251Y - NPN Silicon RF Power Transistor (Ampleon Die) Visit Rochester Electronics LLC Buy

    DARLINGTON SOT23 NPN Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    FMMT634

    Abstract: IC 1A datasheet darlington sot23 npn transistor Ic 1A datasheet transistor Ic 1A datasheet NPN FMMT734 DSA003701
    Text: “SuperSOT” SOT23 NPN SILICON POWER DARLINGTON TRANSISTOR FMMT634 ISSUE 1 – APRIL 97 FEATURES * 625mW POWER DISSIPATION * Highest current capability SOT23 Darlington * Very high hFE - specified at 2A 5K minimum - typically 600 at 5A COMPLEMENTARY TYPE – FMMT734


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    PDF FMMT634 625mW FMMT734 100mA 100ms 100us FMMT634 IC 1A datasheet darlington sot23 npn transistor Ic 1A datasheet transistor Ic 1A datasheet NPN FMMT734 DSA003701

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    Abstract: No abstract text available
    Text: “SuperSOT” SOT23 NPN SILICON POWER DARLINGTON TRANSISTOR FMMT634 ISSUE 1 – APRIL 97 FEATURES * 625mW POWER DISSIPATION * Highest current capability SOT23 Darlington * Very high hFE - specified at 2A 5K minimum - typically 600 at 5A COMPLEMENTARY TYPE – FMMT734


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    PDF FMMT634 625mW FMMT734 100mA 100us

    Untitled

    Abstract: No abstract text available
    Text: BCV27 BCV47 SOT23 NPN SILICON PLANAR DARLINGTON TRANSISTORS ISSUE 3 – SEPTEMBER 1995 ✪ FEATURES * High VCEO * Low saturation voltage COMPLEMENTARY TYPES – BCV27 – BCV28 BCV47 – BCV48 E C B PARTMARKING DETAILS – BCV27 – ZFF BCV47 – ZFG SOT23 ABSOLUTE MAXIMUM RATINGS.


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    PDF BCV27 BCV47 BCV28 BCV48

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    Abstract: No abstract text available
    Text: BCV27 BCV47 SOT23 NPN SILICON PLANAR DARLINGTON TRANSISTORS ISSUE 3 – SEPTEMBER 1995 ✪ FEATURES * High VCEO * Low saturation voltage COMPLEMENTARY TYPES – BCV27 – BCV28 BCV47 – BCV48 E C B PARTMARKING DETAILS – BCV27 – ZFF BCV47 – ZFG SOT23 ABSOLUTE MAXIMUM RATINGS.


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    PDF BCV27 BCV47 BCV28 BCV48

    BCV28

    Abstract: BCV27 BCV47 BCV48 FMMT38A DSA003671
    Text: BCV27 BCV47 SOT23 NPN SILICON PLANAR DARLINGTON TRANSISTORS ISSUE 3 – SEPTEMBER 1995 ✪ FEATURES * High VCEO * Low saturation voltage COMPLEMENTARY TYPES – BCV27 – BCV28 BCV47 – BCV48 E C B PARTMARKING DETAILS – BCV27 – ZFF BCV47 – ZFG SOT23 ABSOLUTE MAXIMUM RATINGS.


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    PDF BCV27 BCV47 BCV28 BCV48 BCV28 BCV27 BCV47 BCV48 FMMT38A DSA003671

    TS16949

    Abstract: ZXTN04120HFF ZXTN04120HFFTA ZXTP05120HFF darlington complementary 120v
    Text: ZXTN04120HFF 120V, SOT23F, NPN medium power Darlington transistor Summary BVCEO > 120V IC cont = 1A VCE(sat) < 1.5V @ 1A PD = 1.5W Complementary part number ZXTP05120HFF Description C This high performance NPN Darlington transistor is housed in the small outline SOT23 flat package for applications where


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    PDF ZXTN04120HFF OT23F, ZXTP05120HFF ZXTN04120HFFTA D-81541 TS16949 ZXTN04120HFF ZXTN04120HFFTA ZXTP05120HFF darlington complementary 120v

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    Abstract: No abstract text available
    Text: ZXTN04120HFF 120V, SOT23F, NPN medium power Darlington transistor Summary BVCEO > 120V IC cont = 1A VCE(sat) < 1.5V @ 1A PD = 1.5W Complementary part number ZXTP05120HFF Description C This high performance NPN Darlington transistor is housed in the small outline SOT23 flat package for applications where


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    PDF ZXTN04120HFF OT23F, ZXTP05120HFF ZXTN04120HFFTA D-81541

    BCV47TC

    Abstract: BCV47
    Text: A Product Line of Diodes Incorporated BCV47 60V NPN DARLINGTON TRANSISTOR IN SOT23 Features Mechanical Data • • • • • • • • • • • • • BVCEO > 60V Darlington Transistor hFE > 10k @ 100mA for high gain IC = 500mA high Continuous Collector Current


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    PDF BCV47 100mA 500mA BCV46 AEC-Q101 J-STD-020 MIL-STD-202, DS33001 BCV47TC BCV47

    darlington sot23 npn

    Abstract: S1M sot23 SMBTA13 SMBTA14
    Text: SMBTA13, SMBTA14 NPN Silicon Darlington Transistors 3  High DC current gain  High collector current  Low collector-emitter saturation voltage 2 1 Type Marking Pin Configuration SMBTA13 s1M 1=B 2=E 3=C SOT23 SMBTA14 s1N 1=B 2=E 3=C SOT23 VPS05161 Package


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    PDF SMBTA13, SMBTA14 SMBTA13 VPS05161 EHP00826 EHP00827 EHP00828 EHP00829 Jul-12-2001 darlington sot23 npn S1M sot23 SMBTA13 SMBTA14

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    Abstract: No abstract text available
    Text: SMBTA13, SMBTA14 NPN Silicon Darlington Transistors 3  High DC current gain  High collector current  Low collector-emitter saturation voltage 2 1 Type Marking Pin Configuration SMBTA13 s1M 1=B 2=E 3=C SOT23 SMBTA14 s1N 1=B 2=E 3=C SOT23 VPS05161 Package


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    PDF SMBTA13, SMBTA14 VPS05161 SMBTA13 SMBTA14 EHP00826 EHP00827 EHP00828 EHP00829 Nov-30-2001

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    Abstract: No abstract text available
    Text: BCV27, BCV47 NPN Silicon Darlington Transistors 3  For general AF applications  High collector current  High current gain  Complementary types: BCV26, BCV46 PNP 2 1 Type Marking Pin Configuration BCV27 FFs 1=B 2=E 3=C SOT23 BCV47 FGs 1=B 2=E 3=C SOT23


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    PDF BCV27, BCV47 BCV26, BCV46 VPS05161 BCV27 BCV47

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    Abstract: No abstract text available
    Text: BCV26, BCV46 PNP Silicon Darlington Transistors 3  For general AF applications  High collector current  High current gain  Complementary types: BCV27, BCV47 NPN 2 1 Type Marking Pin Configuration BCV26 FDs 1=B 2=E 3=C SOT23 BCV46 FEs 1=B 2=E 3=C SOT23


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    PDF BCV26, BCV46 BCV27, BCV47 VPS05161 BCV26 BCV46

    Marking Code FGs

    Abstract: No abstract text available
    Text: BCV27, BCV47 NPN Silicon Darlington Transistors 3  For general AF applications  High collector current  High current gain  Complementary types: BCV26, BCV46 PNP 2 1 Type Marking Pin Configuration BCV27 FFs 1=B 2=E 3=C SOT23 BCV47 FGs 1=B 2=E 3=C SOT23


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    PDF BCV27, BCV47 BCV26, BCV46 VPS05161 BCV27 BCV47 Marking Code FGs

    BCV26

    Abstract: BCV27 BCV46 BCV47
    Text: BCV26, BCV46 PNP Silicon Darlington Transistors 3  For general AF applications  High collector current  High current gain  Complementary types: BCV27, BCV47 NPN 2 1 Type Marking Pin Configuration BCV26 FDs 1=B 2=E 3=C SOT23 BCV46 FEs 1=B 2=E 3=C SOT23


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    PDF BCV26, BCV46 BCV27, BCV47 BCV26 VPS05161 EHP00295 BCV26 BCV27 BCV46 BCV47

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    Abstract: No abstract text available
    Text: BCV26, BCV46 PNP Silicon Darlington Transistors 3  For general AF applications  High collector current  High current gain  Complementary types: BCV27, BCV47 NPN 2 1 Type Marking Pin Configuration BCV26 FDs 1=B 2=E 3=C SOT23 BCV46 FEs 1=B 2=E 3=C SOT23


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    PDF BCV26, BCV46 BCV27, BCV47 VPS05161 BCV26 BCV46

    FMMT634Q

    Abstract: No abstract text available
    Text: A Product Line of Diodes Incorporated FMMT634Q 100V NPN DARLINGTON TRANSISTOR IN SOT23 Description Mechanical Data This Bipolar Junction Transistor BJT has been designed to meet the stringent requirements of Automotive Applications. •  Features 


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    PDF FMMT634Q 900mA 625mW FMMT734Q AEC-Q101 DS37051 FMMT634Q

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    Abstract: No abstract text available
    Text: FMMTA12 Not Recommended for New Design Please Use FMMTA14 FMMTA12 FMMTA13 FMMTA14 SOT23 NPN SILICON PLANAR DARLINGTON TRANSISTORS ISSUE 4 - DECEMBER 1996 COMPLEMENTARY TYPES - PARTMARKING DETAILS – FMMTA12 – NONE FMMTA13 – FMMTA63 FMMTA14 – FMMTA64 E C


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    PDF FMMTA12 FMMTA14 FMMTA12 FMMTA13 FMMTA63 FMMTA64

    FMMT-A12

    Abstract: FMMT38A FMMTA12 FMMTA13 FMMTA14 FMMTA63 FMMTA64
    Text: FMMTA12 Not Recommended for New Design Please Use FMMTA14 FMMTA12 FMMTA13 FMMTA14 SOT23 NPN SILICON PLANAR DARLINGTON TRANSISTORS ISSUE 4 - DECEMBER 1996 COMPLEMENTARY TYPES - PARTMARKING DETAILS – FMMTA12 – NONE FMMTA13 – FMMTA63 FMMTA14 – FMMTA64 E C


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    PDF FMMTA12 FMMTA14 FMMTA12 FMMTA13 FMMTA63 FMMTA64 FMMT-A12 FMMT38A FMMTA13 FMMTA14 FMMTA63 FMMTA64

    IC103

    Abstract: MT38A araa FMMT38A FMMT38B FMMT38C CJKL
    Text: m SOT23 NPN SILICON PLANAR MEDIUM POWER DARLINGTON ISSUE 2- JANUARY TRANSISTORS 1996 FEATURES * 60 Volt VCEO * Gain of 10K at IC=0.5 Amp PARTMARKING DETAILS - ABSOLUTE MAXIMUM FMMT38A - 4J FMMT38B - 5J FM MT38C - 7.J RATINGS. PARAMETER Collector-Base Voltage


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    PDF MT38C FMMT38A FMMT38B 10perating -55to IC103 MT38A araa FMMT38A FMMT38B FMMT38C CJKL

    BCV47

    Abstract: No abstract text available
    Text: BCV27 IS OBSOLETE PLEASE USE MMBT6427 BCV47 IS CURRENTLY ACTIVE BCV27 BCV47 SOT23 NPN SILICON PLANAR DARLINGTON TRANSISTORS ISSUE 3 – SEPTEMBER 1995 ✪ FEATURES * High VCEO * Low saturation voltage COMPLEMENTARY TYPES – BCV27 – BCV28 BCV47 – BCV48 E C


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    PDF BCV27 MMBT6427 BCV47 BCV27 BCV28 BCV47 BCV48

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    Abstract: No abstract text available
    Text: BCV27 BCV47 SOT23 NPN SILICON PLANAR DARLINGTON TRANSISTORS ISSUE 3 - SEPTEMBER 1995 O FEATURES * HighVCE0 * Low saturation voltage COMPLEMENTARY TYPES- BCV27 - BCV28 BCV47 - BCV48 PARTMARKING DETAILS - 0w / BCV27 - ZFF BCV47-ZFG SOT23 ABSOLUTE MAXIMUM RATINGS.


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    PDF BCV27 BCV47 BCV27 BCV28 BCV47 BCV48 BCV47-ZFG

    Untitled

    Abstract: No abstract text available
    Text: FMMTA12 FMMTA13 FMMTA14 SOT23 NPN SILICON PLANAR DARLINGTON TRANSISTORS I ISSUE 4 - DECEMBER 1996_ COMPLEMENTARY TYPES- FMMTA12 - NONE FMMTA13 - FMMTA63 FMMTA14 - FMMTA64 PARTMARKING DETAILS - FMMTA12 - 3 W FMMTA13 - 1M FMMTA14 - 1N


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    PDF TYPESFMMTA12 FMMTA13 FMMTA63 FMMTA14 FMMTA64 FMMTA12 FMMTA14

    Untitled

    Abstract: No abstract text available
    Text: BCV27 BCV47 SOT23 NPN SILICON PLANAR DARLINGTON TRANSISTORS ISSUE 3 - SEPTEMBER 1995 O FEATURES * H igh VCE0 * L o w s a tu ra tio n v o lta g e CO M PLEM ENTARY TYPES - p C BCV27 - BCV28 BCV47 - BCV48 PAR TM ARKING DETAILS - BCV27 - ZFF B C V 4 7 - ZFG SOT23


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    PDF BCV27 BCV28 BCV47 BCV48 BCV47

    Untitled

    Abstract: No abstract text available
    Text: • bbS3131 0024537 1A7 H A P X N AUER PHILIPS/DISCRETE b?E T> BCV27 BCV47 ;v SILICON PLANAR DARLINGTON TRANSISTOR N-P-N silicon planar darlington transistor in a plastic SOT23 envelope. P-N-P complement is BCV26/46. QUICK REFERENCE DATA BCV27 BCV47 Collector-emitter voltage open base


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    PDF bbS3131 BCV27 BCV47 BCV26/46.