DARLINGTON PAIR PNP Search Results

113 marking code PNP transistor

Abstract: 113 marking code transistor 2SB852K T146 transistor PNP transistor 2SB
Contextual Info: 2SB852K Transistor, PNP, Darlington pair Features Dimensions U n its : mm available In SMT3 (SMT, SC-59) package 2SB852K (SMT3) package marking: 2SB852K; (-)★ where ★ is hFE code 0.8 * 0. Darlington connection provides high DC current gain (hFE) fl J3

103 transistor

Abstract: B1183 2SB1183F5 marking code SSs 2SD1759 transistor PNP 2sb transistor LB 122 transistor
Contextual Info: 2SB1183F5 Transistor, PNP, Darlington pair Features Dimensions Units : mm available in CPT F5 (SC-63) package 2SB1183F5 (CPT F5) package marking: B1183*-0, where ★ is hFE code and □ is lot number Darlington connection provides high dc current gain (hFE)

B1316

Abstract: DIODE B1316 B-1316 2SB1316F5 PACKAGE MARKING f5 transistor 2SB B131-6 DIODE 2FL 2fl marking diode 2fl marking
Contextual Info: 2SB1316F5 Transistor, PNP, Darlington pair Features Dimensions Units : mm • available in CPT F5 (SC-63) package • package marking: B1316-A-Q, where ★ is hFE code and □ is lot number • Darlington connection provides high dc current gain (hFE) •

113 marking code PNP transistor

Abstract: 2sb darlington Darlington pair pnp
Contextual Info: 2SB852K Transistor, PNP, Darlington pair Features Dimensions Units : mm available in SMT3 (SMT, SC-59) package 2SB852K (SMT3) package marking: 2SB852K; U * where ★ is hFE code 1 9 *0 2 0.8 Min. 00*0 095 Darlington connection provides high DC current gain (hFE)

2SA transistor

Abstract: high current Darlington pair IC
Contextual Info: 2SA830S Transistor, PNP, Darlington pair Features Dimensions Units : mm • available in SPT (SC-72) package • Darlington connection provides high gain, typically hFE = 20000 at lc = -100 mA 2SA830S (SPT) • built-in resistance of approximately 4 k il between base and emitter

Darlington pair

Abstract: "Small Signal Amplifier"
Contextual Info: Transistors USA / European specification models types FTO-92 / PNP type General purpose small signal amplifier TO-92 package General purpose amplification and switching Medium power amplification Darlington pair type 89

transistor a13

Abstract: transistor AS 431 A13 transistor
Contextual Info: ALLEGRO MICROSYSTEMS INC T3 D • 0S0433A 00[l3fc.bl 1 ■ T - 9 J-O I PROCESS BOB Process BOB PNP Darlington Transistor Process BOB is a PN P silicon epitaxial planar Darlington pair. It is designed for use in high-current, high-gain amplifier applications. Its NPN comple­

b1316

Abstract: B131-6
Contextual Info: Transistor, PNP, Darlington pair 2 S B 1 3 1 6 F 5 Features • available in CPT F5 SC-63 package • package marking: B1316*Q , where ★ is hFE code and □ is lot number • Darlington connection provides high dc current gain (hFE) • damper diode is incorporated

B1183

Abstract: Darlington pair IC single
Contextual Info: 2SB1183F5 Transistor, PNP, Darlington pair Features Dimensions Units : mm • • • • available in CPT F5 (SC-63) package package marking: B1183*Q, where ★ is hFE code and Q is lot number Darlington connection provides high dc current gain (hFE) includes 4 k£2 (typical) base-to-emitter

Contextual Info: ALLEGRO MICROSYSTEMS INC T3 D • 05QM33Ö Ü003723 Ö ■ T -9 1-0 1 PR O CESS SRB Process SRB PNP Darlington Transistor Process S R B is a double-diffused silicon epitaxial P N P Darlington pair. This device is designed for use as a high-gain amplifier in audio and control circuits

2SB939

Abstract: 2SB939A 2SD1262 2SD1262A high current Darlington pair IC
Contextual Info: Power Transistors 2SB939, 2SB939A 2SB939, 2SB939A Package Dimensions Silicon PNP Epitaxial Planar Darlington Type Medium Speed Power Switching Complementary Pair with 2SD 1262, 2SD 1262A • Features • High DC current gain hFE • High speed switching

2SB1194

Abstract: 2SD1633
Contextual Info: Power T ransistors 2SB1194 2SB1194 Silicon PNP Epitaxial Planar Darlington Type Package Dimensions Power Switching Complementary Pair with 2SD1633 •Features • • • • Unit • mm ,10.2max._ 5.7max. High speed switching Good linearity of DC current gain

2SB1333

Contextual Info: 2SB1333 Transistor, PNP Features Dimensions Units : mm • available in MRT package • Darlington connection provides high dc current gain (hFE) • • damper diode is incorporated built in resistors between base and emitter complementary pair with 2SD2011

2SB1387

Abstract: 2SD1978 Hitachi DSA00493
Contextual Info: 2SB1387 Silicon PNP Epitaxial, Darlington Application • Low frequency power amplifier • Complementary pair with 2SD1978 Outline 2SB1387 Absolute Maximum Ratings Ta = 25°C Item Symbol Ratings Unit Collector to base voltage VCBO –120 V Collector to emitter voltage

2SB1180

Abstract: panasonic 2SB panasonic 2SD
Contextual Info: Power T ransistors 2SB1180, 2SB1180A 2SB1180, 2SB1180A • Package Dimensions U nit I mm Silicon PNP Epitaxial Planar Darlington Type 3.7max. 7.3m ax. Medium Speed Power Switching . Complementary Pair with 2SD 1750, 2SD 1750A 3.2m ax. 0 . 9 1 0.1 0.5max, ■ Features

Contextual Info: Power Transistors 2SB11G8 2SB1108 Silicon PNP Epitaxial Planar Darlington Type Package Dimensions Medium Speed Switching Complementary Pair with 2SD1608 U n it : 4 4 max. 10.2max. • Features !,9max. • High DC c u rre n t gain hFE • High speed switching

Contextual Info: Power T ransistors 2SBV418, 2SB1418À 2SB1418, 2SB1418A Silicon PNP Epitaxial Planar Darlington Type Package Dimensions Power Amplifier Complementary Pair with 2SD2138 •Features • High DC current gain Iif e • High speed switching • Automatic mounting by radial taping is possible. ‘

Contextual Info: AL L E GRO MI C ROS Y S T E MS I NC T3 D • 050M33Ö 0003721 4 ■ ALGR T-91-01 PROCESS SQL Process SQL NPN Darlington Transistor Process SQ L is a double-diffused silicon epitaxial NPN Darlington pair. This device is designed for use as a high-gain amplifier in audio and control circuits

2SB1254

Abstract: 2SD1894 high current Darlington pair IC Darlington pair IC
Contextual Info: Power Transistors 2SB 1254 Package Dimensions Unit : mm Silicon PNP Epitaxial Planar Darlington Type Power Amplifier Complementary Pair with 2S D 1894 1 5.5m ax. 5 2m ax. - s3 .2 • Features • Optimum for 60W hi-fi output • High DC current gain hpE

2SB950A

Abstract: 2SB950 2SD1276 2SD1276A
Contextual Info: Power Transistors 2SB950, 2SB950À Package Dimensions 2 SB9 5 0 , 2 SB9 5 0 A U nit * mm Silicon PNP Epitaxial Planar Darlington Type 4 4max. 10.2tnax, 5.7ma*. 2.9max. Power Amplifier, Switching Complementary Pair with 2SD1276, 2SD1276A •Features • High DC current gain

Darlington pair

Abstract: darlington pair transistor amplifier TO92 package darlington Small Signal Amplifiers npn darlington darlington amplifiers Darlington npn darlington power transistor
Contextual Info: Transistors USA / European specification models types [Leaded type] FTO-92 / NPN type General purpose small signal amplifiers General purpose amplification and switching Medium power amplification Darlington pair type 88 TO-92 package Transistors USA / European specification models types

Contextual Info: Power T ransistors 2SB1254 2SB1254 Silicon PNP Epitaxial Planar Darlington Type Package Dimensions Unit m Power Amplifier Complementary Pair with 2SD 1894 15 .5 max. 5 2max 1- /3 ,2 6.9m m . • Features • • • • Optimum for 60W hi-fi output

2SB1180

Abstract: 2SB1180A 2SD1750 2SD1750A
Contextual Info: Power T ransistors 2SB1180, 2SB1180A 2SB1180, 2SB1180A Package Dimensions Silicon PNP Epitaxial Planar Darlington Type Medium Speed Power Switching . Complementary Pair with 2SD1750, 2SD1750A • Features ‘ • High DC c u rre n t gain Iif e • High sp eed sw itching

2sb951a

Abstract: 2SB951 2SD1277 2SD1277A
Contextual Info: Power T ranslstors 2SB951, 2SB951A 2SB951, 2SB951A Package Dimensions SHicon PNP Epitaxial Planar Darlington Type U nit ! mm 10.2max., 4 4 max. 5.7 max. Medium Speed Switching Complementary Pair with 2SD 1277, 2S D 1277A 2.9mix. o +l • Features \ 03.1± O .l