DARLINGTON IB 0.1A Search Results

DARLINGTON IB 0.1A Result Highlights (5)

Part	Manufacturer	Description
ULS2003H/R	Rochester Electronics LLC	ULS2003 - High Voltage High Current Darlington Array
ULS2022R/B	Rochester Electronics LLC	ULS2022 - High Voltage High Current Darlington Array
PS2502L-1-A	Renesas Electronics Corporation	DC Input Darlington, , /
PS2502L-4-A	Renesas Electronics Corporation	DC Input Darlington, , /
PS2502-4-A	Renesas Electronics Corporation	DC Input Darlington, , /

DARLINGTON IB 0.1A Datasheets Context Search

Catalog Datasheet	MFG & Type	PDF	Document Tags
SDH02 Abstract: No abstract text available Text: SDH02 NPN Darlington With built-in flywheel diode Absolute maximum ratings External dimensions E Electrical characteristics Ta=25°C Ratings Unit Symbol VCBO 120 V ICBO VCEO 100 V IEBO VEBO 6 V VCEO 100 IC 1.5 A hFE 2000 ICP 2.5 (PW≤1ms, Du≤10%) A IB	Original	PDF	SDH02 SDH02
STA473A Abstract: No abstract text available Text: STA473A NPN Darlington General purpose Absolute maximum ratings External dimensions D Unit Symbol VCBO 120 V ICBO VCEO 100 V IEBO VEBO 6 V VCEO 100 IC 2 A hFE 2000 ICP 4 PW≤1ms, Du≤25% A IB 0.5 A 4 (Ta=25°C) (Ta=25°C) Specification min typ max Ratings	Original	PDF	STA473A 10-pin) STA473A
SMA4036 Abstract: No abstract text available Text: SMA4036 Absolute maximum ratings NPN Darlington With built-in flywheel diode Ratings Unit Symbol VCBO VCEO VEBO IC ICP IB IF IFSM VR 120 100 6 2 4 PW≤1ms, Du≤50% 0.2 2 (PW≤0.5ms, Du≤25%) 4 (PW≤10ms, Single pulse) 120 4 (Ta=25°C) 20 (Tc=25°C)	Original	PDF	SMA4036 PW10ms, 15-pin) SMA4036
TIP120 Abstract: TIP122 Darlington 30A tip120 darlington equivalent of TIP122 tip121 tip122v Text: SavantIC Semiconductor Product Specification Silicon NPN Darlington Power Transistors TIP120/121/122 DESCRIPTION •With TO-220C package ·DARLINGTON ·High DC current gain ·Low collector saturation voltage ·Complement to type TIP125/126/127 APPLICATIONS	Original	PDF	TIP120/121/122 O-220C TIP125/126/127 TIP120 TIP121 TIP122 TIP120 TIP122 Darlington 30A tip120 darlington equivalent of TIP122 tip121 tip122v
equivalent of TIP122 Abstract: TIP120 TIP122 DARLINGTON 3A 100V npn tip122 data TIP121 Text: Inchange Semiconductor Product Specification TIP120/121/122 Silicon NPN Darlington Power Transistors DESCRIPTION ・With TO-220C package ・DARLINGTON ・High DC current gain ・Low collector saturation voltage ・Complement to type TIP125/126/127 APPLICATIONS	Original	PDF	TIP120/121/122 O-220C TIP125/126/127 TIP120 TIP121 TIP122 equivalent of TIP122 TIP120 TIP122 DARLINGTON 3A 100V npn tip122 data TIP121
2SA1941 amp circuit Abstract: 2SC3303 2SD880 TO3P package 2SA114 smd transistor h2a 2sb834 amplifier circuit using 2sa1943 and 2sc5200 TOSHIBA BIPOLAR POWER TRANSISTOR amplifier design tta1943 Text: Semiconductor Catalog Mar. 2013 Bipolar Power Transistors SEMICONDUCTOR & STORAGE PRODUCTS http://www.semicon.toshiba.co.jp/eng Toshiba Bipolar Power Transistors Thank you for purchasing Toshiba semiconductor products. Semiconductor products are used in a wide range of fields, including	Original	PDF	BCE0016F 2SA1941 amp circuit 2SC3303 2SD880 TO3P package 2SA114 smd transistor h2a 2sb834 amplifier circuit using 2sa1943 and 2sc5200 TOSHIBA BIPOLAR POWER TRANSISTOR amplifier design tta1943
TIP125 Abstract: TIP126 TIP127 Text: Inchange Semiconductor Product Specification Silicon PNP Darlington Power Transistors TIP125/126/127 DESCRIPTION ・With TO-220C package ・DARLNGTON ・High DC durrent gain ・Low collector saturation voltage ・Complement to type TIP120/121/122 APPLICATIONS	Original	PDF	TIP125/126/127 O-220C TIP120/121/122 TIP125 TIP126 TIP127 TIP125 TIP126 TIP127
TIP125 Abstract: TIP127 TIP126 Text: SavantIC Semiconductor Product Specification Silicon PNP Darlington Power Transistors TIP125/126/127 DESCRIPTION •With TO-220C package ·DARLNGTON ·High DC current gain ·Low collector saturation voltage ·Complement to type TIP120/121/122 APPLICATIONS ·Designed for general–purpose amplifier	Original	PDF	TIP125/126/127 O-220C TIP120/121/122 TIP125 TIP126 TIP127 -100V, TIP125 TIP127 TIP126
BU920 Abstract: Designed for automotive ignition applications NPN Transistor 1A 400V npn transistor 400V Saturation npn transistors 400V 1A Text: isc Product Specification INCHANGE Semiconductor isc Silicon NPN Darlington Power Transistor DESCRIPTION •High Voltage ·DARLINGTON APPLICATIONS ·Designed for automotive ignition applications and inverter circuits for motor control. ABSOLUTE MAXIMUM RATINGS Ta=25℃	Original	PDF	140mA BU920 Designed for automotive ignition applications NPN Transistor 1A 400V npn transistor 400V Saturation npn transistors 400V 1A
npn transistors 400V 1A Abstract: Designed for automotive ignition applications Darlington NPN Silicon Diode darlington power transistor NPN Transistor 1A 400V npn transistor 400V BU920T Text: isc Product Specification INCHANGE Semiconductor isc Silicon NPN Darlington Power Transistor DESCRIPTION •High Voltage ·DARLINGTON APPLICATIONS ·Designed for automotive ignition applications and inverter circuits for motor control. ABSOLUTE MAXIMUM RATINGS Ta=25℃	Original	PDF	140mA npn transistors 400V 1A Designed for automotive ignition applications Darlington NPN Silicon Diode darlington power transistor NPN Transistor 1A 400V npn transistor 400V BU920T
automotive ignition tip162 Abstract: TIP162 npn darlington transistor 150 watts F 9016 transistor TO-247 NPN SILICON POWER TRANSISTORS DARLINGTON TIP162A tip16 Text: TIP162 Darlington Power Transistor NPN Silicon Power Darlington Transistors are designed for use in automotive ignition, switching and motor control applications. Features: • Collector-Emitter Sustaining Voltage VCEO sus = 380V (Minimum). • Collector-Emitter Saturation Voltage	Original	PDF	TIP162 automotive ignition tip162 TIP162 npn darlington transistor 150 watts F 9016 transistor TO-247 NPN SILICON POWER TRANSISTORS DARLINGTON TIP162A tip16
TIP127 Application Note Abstract: TRANSISTOR tip122 high gain low voltage PNP transistor darlington power transistor TIP122 TIP127 power transistor pnp darlington Text: isc Product Specification INCHANGE Semiconductor isc Silicon PNP Darlington Power Transistor DESCRIPTION •High DC Current Gain: hFE = 1000 Min @ IC= -3A ·Collector-Emitter Sustaining Voltage: VCEO(SUS) = -100V(Min) ·Low Collector-Emitter Saturation Voltage: VCE(sat) = -2.0V(Max)@ IC= -3A	Original	PDF	-100V TIP122 -20mA -100V, TIP127 TIP127 Application Note TRANSISTOR tip122 high gain low voltage PNP transistor darlington power transistor TIP122 TIP127 power transistor pnp darlington
2sC5200, 2SA1943 Abstract: 2SA1941 equivalent 2SC5353 equivalent 2sc5198 equivalent amplifier circuit using 2sa1943 and 2sc5200 2SC2383 equivalent tpcp8l01 2SA1962 equivalent 2SC4793 2sa1837 2sA1013 equivalent Text: 2011-4 PRODUCT GUIDE Power Transistors SEMICONDUCTOR h t t p : / / w w w . s e m i c o n . t o s h i b a . c o . j p / e n g Power Transistors for Audio Power Amplifiers Using a minute pattern and a high-density MET design, Toshiba has achieved high levels of current	Original	PDF	BCE0016D 2sC5200, 2SA1943 2SA1941 equivalent 2SC5353 equivalent 2sc5198 equivalent amplifier circuit using 2sa1943 and 2sc5200 2SC2383 equivalent tpcp8l01 2SA1962 equivalent 2SC4793 2sa1837 2sA1013 equivalent
BDV66B Abstract: BDV66A BDV67A BDV66 Multicomp, BDV66B BDV67B NPN Transistor VCEO 80V 100V DARLINGTON Multicomp, BDV67B TO-247 NPN SILICON POWER TRANSISTORS Text: BDV66, 67 Darlington Transistors Features: • Collector-Emitter sustaining voltage VCEO sus = 80V (Minimum) - BDV66A, BDV67A = 100V (Minimum) - BDV66B, BDV67B • Collector-Emitter saturation voltage VCE(sat) = 2.0V (Maximum) at IC = 10A • Monolithic construction with Built-in Base-Emitter Shunt Resistor.	Original	PDF	BDV66, BDV66A, BDV67A BDV66B, BDV67B BDV66A BDV66B BDV66B BDV66A BDV67A BDV66 Multicomp, BDV66B BDV67B NPN Transistor VCEO 80V 100V DARLINGTON Multicomp, BDV67B TO-247 NPN SILICON POWER TRANSISTORS

transistor mj11032 Abstract: NPN transistor Ic 50A darlington complementary 120v MJ11032 MJ11033 Text: isc Product Specification INCHANGE Semiconductor isc Silicon NPN Darlington Power Transistor DESCRIPTION •Collector-Emitter Breakdown Voltage : V BR CEO= 120V(Min.) ·High DC Current Gain: hFE= 1000(Min.)@IC= 25A : hFE= 400(Min.)@IC= 50A ·Complement to Type MJ11033	Original	PDF	MJ11033 250mA 500mA transistor mj11032 NPN transistor Ic 50A darlington complementary 120v MJ11032 MJ11033
PNP TRANSISTOR 1k Abstract: transistor 20a COMPLEMENTARY HIGH POWER DARLINGTON TRANSISTORS MJ11015 MJ11016 Text: isc Product Specification INCHANGE Semiconductor isc Silicon PNP Darlington Power Transistor DESCRIPTION •Collector-Emitter Breakdown Voltage: V BR CEO= -120V(Min.) ·High DC Current Gain: hFE= 1000(Min.)@IC= -20A ·Low Collector Saturation Voltage: VCE (sat)= -3.0V(Max.)@ IC= -20A	Original	PDF	-120V MJ11016 -120V; PNP TRANSISTOR 1k transistor 20a COMPLEMENTARY HIGH POWER DARLINGTON TRANSISTORS MJ11015 MJ11016
mj11011 Abstract: transistor 20a MJ11012 20A pnp Text: isc Product Specification INCHANGE Semiconductor isc Silicon PNP Darlington Power Transistor DESCRIPTION •Collector-Emitter Breakdown Voltage: V BR CEO= -60V(Min.) ·High DC Current Gain: hFE= 1000(Min.)@IC= -20A ·Low Collector Saturation Voltage: VCE (sat)= -3.0V(Max.)@ IC= -20A	Original	PDF	MJ11012 mj11011 transistor 20a MJ11012 20A pnp
TRANSISTOR MJ11028 Abstract: transistor mj11028 equivalent SILICON COMPLEMENTARY transistors darlington MJ11028 MJ11029 Text: isc Product Specification INCHANGE Semiconductor isc Silicon NPN Darlington Power Transistor DESCRIPTION •Collector-Emitter Breakdown Voltage : V BR CEO= 60V(Min.) ·High DC Current Gain: hFE= 1000(Min.)@IC= 25A : hFE= 400(Min.)@IC= 50A ·Complement to Type MJ11029	Original	PDF	MJ11029 250mA 500mA TRANSISTOR MJ11028 transistor mj11028 equivalent SILICON COMPLEMENTARY transistors darlington MJ11028 MJ11029
darlington npn 90v Abstract: darlington transistor 90v transistor 20a MJ11013 MJ11014 Text: isc Product Specification INCHANGE Semiconductor isc Silicon NPN Darlington Power Transistor DESCRIPTION •Collector-Emitter Breakdown Voltage: V BR CEO= 90V(Min.) ·High DC Current Gain: hFE= 1000(Min.)@IC= 20A ·Low Collector Saturation Voltage: VCE (sat)= 3.0V(Max.)@ IC= 20A	Original	PDF	MJ11013 darlington npn 90v darlington transistor 90v transistor 20a MJ11013 MJ11014
darlington transistor 90v Abstract: MJ11030 MJ11031 Text: isc Product Specification INCHANGE Semiconductor isc Silicon PNP Darlington Power Transistor DESCRIPTION •Collector-Emitter Breakdown Voltage : V BR CEO= -90V(Min.) ·High DC Current Gain: hFE= 1000(Min.)@IC= -25A : hFE= 400(Min.)@IC= -50A ·Complement to Type MJ11030	Original	PDF	MJ11030 -250mA 500mA -500mA darlington transistor 90v MJ11030 MJ11031
NPN transistor Ic 50A Abstract: darlington transistor 90v darlington npn 90v MJ11030 MJ11031 Text: isc Product Specification INCHANGE Semiconductor isc Silicon NPN Darlington Power Transistor DESCRIPTION •Collector-Emitter Breakdown Voltage : V BR CEO= 90V(Min.) ·High DC Current Gain: hFE= 1000(Min.)@IC= 25A : hFE= 400(Min.)@IC= 50A ·Complement to Type MJ11031	Original	PDF	MJ11031 250mA 500mA NPN transistor Ic 50A darlington transistor 90v darlington npn 90v MJ11030 MJ11031
MJ11032 Abstract: MJ11033 transistor MJ11032 Text: isc Product Specification INCHANGE Semiconductor isc Silicon PNP Darlington Power Transistor DESCRIPTION •Collector-Emitter Breakdown Voltage : V BR CEO= -120V(Min.) ·High DC Current Gain: hFE= 1000(Min.)@IC= -25A : hFE= 400(Min.)@IC= -50A ·Complement to Type MJ11032	Original	PDF	-120V MJ11032 -250mA 500mA -500mA -120V; MJ11032 MJ11033 transistor MJ11032
COMPLEMENTARY HIGH POWER DARLINGTON TRANSISTORS Abstract: transistor 20a MJ11013 MJ11014 Text: isc Product Specification INCHANGE Semiconductor isc Silicon PNP Darlington Power Transistor DESCRIPTION •Collector-Emitter Breakdown Voltage: V BR CEO= -90V(Min.) ·High DC Current Gain: hFE= 1000(Min.)@IC= -20A ·Low Collector Saturation Voltage: VCE (sat)= -3.0V(Max.)@ IC= -20A	Original	PDF	MJ11014 COMPLEMENTARY HIGH POWER DARLINGTON TRANSISTORS transistor 20a MJ11013 MJ11014
Untitled Abstract: No abstract text available Text: T O SH IB A MP4507 TOSHIBA PO W ER TRANSISTOR M OD ULE SILICON TRIPLE DIFFUSED TYPE DARLINGTON PO W ER TRANSISTOR 4 IN 1 MP4507 INDUSTRIAL APPLICATIONS Unit in mm HIGH PO W ER SWITCHING APPLICATIONS. H AM M ER DRIVE, PULSE MOTOR DRIVE AND INDUCTIVE. LOAD SWITCHING	OCR Scan	PDF	MP4507

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DARLINGTON IB 0.1A Search Results

DARLINGTON IB 0.1A Result Highlights (5)

DARLINGTON IB 0.1A Datasheets Context Search

SDH02

STA473A

SMA4036

TIP120

equivalent of TIP122

2SA1941 amp circuit

TIP125

TIP125

BU920

npn transistors 400V 1A

automotive ignition tip162

TIP127 Application Note

2sC5200, 2SA1943

BDV66B

transistor mj11032

PNP TRANSISTOR 1k

mj11011

TRANSISTOR MJ11028

darlington npn 90v

darlington transistor 90v

NPN transistor Ic 50A

MJ11032

COMPLEMENTARY HIGH POWER DARLINGTON TRANSISTORS

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