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Rochester Electronics LLC RFD8P06LE P-CHANNEL POWER MOSFET
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey ()	RFD8P06LE	Bulk	7,200		753	1 - 10 - 100 - 1000 $0.4 10000 $0.4	Buy Now
	RFD8P06LE	Bulk	1,753		753	1 - 10 - 100 - 1000 $0.4 10000 $0.4	Buy Now
Rochester Electronics LLC RFD8P06E P-CHANNEL POWER MOSFET
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	RFD8P06E	Bulk	2,278		781	1 - 10 - 100 - 1000 $0.38 10000 $0.38	Buy Now
Harris Semiconductor FD8P06
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Bristol Electronics	FD8P06		525			1 - 10 - 100 - 1000 - 10000 -	Get Quote
Fairchild Semiconductor Corporation RFD8P06LE 8A, 60V, 0.33ohm, P-Channel Power MOSFET, TO-251AA
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Rochester Electronics	RFD8P06LE		7,200		1	1 - 10 - 100 $0.3831 1000 $0.318 10000 $0.2835	Buy Now
Fairchild Semiconductor Corporation RFD8P06LESM9A 8A, 60V, 0.33ohm, P-Channel MOSFET, TO-252AA
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Rochester Electronics	RFD8P06LESM9A		38		1	1 - 10 - 100 $0.3831 1000 $0.318 10000 $0.2835	Buy Now
ComSIT USA	RFD8P06LESM9A		4,620			1 - 10 - 100 - 1000 - 10000 -	Get Quote

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D8P06 Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
Contextual Info: P *3 3 S D8P06E, D8P06ESM, RFP8P06E 8A, 60V, 0.300 Ohm, P-Channel Power MOSFETs September 1998 Features Description • 8A, 60V These are P-Channel power MOSFETs manufactured using the MegaFET process. This process, which uses feature sizes approaching those of LSI integrated circuits gives opti	OCR Scan	RFD8P06E, RFD8P06ESM, RFP8P06E 0-300i2 49e-10 1e-30 48e-4 42e-7) 40e-3	PDF
8A60V Abstract: RFD8P06E RFD8P06ESM RFD8P06ESM9A RFP8P06E TB334 bv254 Contextual Info: D8P06E, D8P06ESM, RFP8P06E Data Sheet January 2002 8A, 60V, 0.300 Ohm, P-Channel Power MOSFETs Features • 8A, 60V These are P-Channel power MOSFETs manufactured using the MegaFET process. This process, which uses feature sizes approaching those of LSI integrated circuits gives	Original	RFD8P06E, RFD8P06ESM, RFP8P06E RFD8P06ESM RFP8P06E 8A60V RFD8P06E RFD8P06ESM9A TB334 bv254	PDF
RFD8P06E Abstract: RFD8P06ESM RFD8P06ESM9A RFP8P06E IS415 BV202 D8P06 Contextual Info: D8P06E, D8P06ESM, RFP8P06E S E M I C O N D U C T O R 8A, 60V, ESD Rated, Avalanche Rated, P-Channel Enhancement-Mode Power MOSFETs December 1995 Features Packages JEDEC TO-220AB • 8A, 60V SOURCE • rDS ON = 0.300Ω DRAIN GATE • Temperature Compensating PSPICE Model	Original	RFD8P06E, RFD8P06ESM, RFP8P06E O-220AB O-251AA RFD8P06ESM RFP8P06E 49e-10 1e-30 RFD8P06E RFD8P06ESM9A IS415 BV202 D8P06	PDF
RFD8P06E Abstract: RFD8P06ESM RFD8P06ESM9A RFP8P06E TB334 Contextual Info: D8P06E, D8P06ESM, RFP8P06E Data Sheet July 1999 8A, 60V, 0.300 Ohm, P-Channel Power MOSFETs File Number 3937.5 Features • 8A, 60V These are P-Channel power MOSFETs manufactured using the MegaFET process. This process, which uses feature sizes approaching those of LSI integrated circuits gives	Original	RFD8P06E, RFD8P06ESM, RFP8P06E RFD8P06ESM RFP8P06E RFD8P06E RFD8P06ESM9A TB334	PDF
8A60V Abstract: rfp8p06e Contextual Info: D8P06E, D8P06ESM, RFP8P06E integri I D a ta S h e e t J u ly 1 9 9 9 8A, 60V, 0.300 Ohm, P-Channel Power MOSFETs F ile N u m b e r 3 9 3 7 .5 Features • 8A, 60V These are P-Channel power MOSFETs manufactured using the MegaFET process. This process, which uses feature	OCR Scan	RFD8P06E, RFD8P06ESM, RFP8P06E RFD8P06ESM RFP8P06E AN7254 8A60V	PDF
FP8P06E Abstract: 9l2i sclm PSPICE PLIC Contextual Info: D8P06E, D8P06ESM, RFP8P06E fin H A R R IS U U S E M I C O N D U C T O R 8A, 60V, ESD Rated, Avalanche Rated, P-Channel Enhancement-Mode Power MOSFETs December 1995 Features Packages JE D E C T 0 -2 2 0 A B • BA, 6 0 V • SOURCE^. r DS ON = 0.3 0 0 U	OCR Scan	RFD8P06E, RFD8P06ESM, RFP8P06E RFD8P06ESM RFP8P06E 1e-30 48e-4 42e-7) 40e-3 FP8P06E 9l2i sclm PSPICE PLIC	PDF
Contextual Info: D8P06E, D8P06ESM, RFP8P06E Data Sheet Title FD8 6E, D8 6ES P8P E bt A, V, 00 m, 8A, 60V, 0.300 Ohm, P-Channel Power MOSFETs Features These are P-Channel power MOSFETs manufactured using the MegaFET process. This process, which uses feature sizes approaching those of LSI integrated circuits gives	Original	RFD8P06E, RFD8P06ESM, RFP8P06E 175oC TB334	PDF