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onsemi FDLL4148-D87Z DIODE GEN PURP 100V 200MA SOD80
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	FDLL4148-D87Z	Digi-Reel	104,813		1	1 $0.1 10 $0.062 100 $0.1 1000 $0.02389 10000 $0.0177	Buy Now
	FDLL4148-D87Z	Cut Tape	104,813		1	1 $0.1 10 $0.062 100 $0.1 1000 $0.02389 10000 $0.0177	Buy Now
	FDLL4148-D87Z	Reel	90,000		10,000	1 - 10 - 100 - 1000 - 10000 $0.0157	Buy Now
Mouser Electronics	FDLL4148-D87Z		21,427			1 $0.1 10 $0.044 100 $0.023 1000 $0.018 10000 $0.013	Buy Now
Newark	FDLL4148-D87Z	Reel			30,000	1 - 10 - 100 - 1000 - 10000 -	Buy Now
Onlinecomponents.com	FDLL4148-D87Z		10,000			1 - 10 - 100 - 1000 - 10000 $0.0111	Buy Now
Rochester Electronics	FDLL4148-D87Z		28,800		1	1 $0.025 10 $0.025 100 $0.0235 1000 $0.0213 10000 $0.0213	Buy Now

Avnet Silica	FDLL4148-D87Z			24 Weeks	10,000	1 - 10 - 100 - 1000 - 10000 -	Buy Now
EBV Elektronik	FDLL4148-D87Z			25 Weeks	10,000	1 - 10 - 100 - 1000 - 10000 -	Buy Now
Master Electronics	FDLL4148-D87Z		10,000			1 - 10 - 100 - 1000 - 10000 $0.0111	Buy Now
Win Source Electronics	FDLL4148-D87Z		6,790			1 - 10 - 100 - 1000 - 10000 $0.0109	Buy Now
onsemi FDLL4448-D87Z DIODE GEN PURP 100V 200MA SOD80
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	FDLL4448-D87Z	Digi-Reel	58,392		1	1 $0.14 10 $0.085 100 $0.14 1000 $0.03313 10000 $0.02481	Buy Now
	FDLL4448-D87Z	Cut Tape	58,392		1	1 $0.14 10 $0.085 100 $0.14 1000 $0.03313 10000 $0.02481	Buy Now
	FDLL4448-D87Z	Reel	20,000		10,000	1 - 10 - 100 - 1000 - 10000 $0.02212	Buy Now
Mouser Electronics	FDLL4448-D87Z		42,971			1 $0.14 10 $0.086 100 $0.034 1000 $0.025 10000 $0.017	Buy Now
Newark	FDLL4448-D87Z	Reel			20,000	1 - 10 - 100 - 1000 - 10000 -	Buy Now
Onlinecomponents.com	FDLL4448-D87Z					1 - 10 - 100 - 1000 - 10000 $0.0138	Buy Now
Rochester Electronics	FDLL4448-D87Z		974		1	1 $0.025 10 $0.025 100 $0.0235 1000 $0.0213 10000 $0.0213	Buy Now

Avnet Silica	FDLL4448-D87Z		10,000	24 Weeks	10,000	1 - 10 - 100 - 1000 - 10000 -	Buy Now
EBV Elektronik	FDLL4448-D87Z			25 Weeks	10,000	1 - 10 - 100 - 1000 - 10000 -	Buy Now
Master Electronics	FDLL4448-D87Z					1 - 10 - 100 - 1000 - 10000 $0.0138	Buy Now
New Advantage Corporation	FDLL4448-D87Z		20,000		1	1 - 10 - 100 - 1000 - 10000 $0.0213	Buy Now
onsemi MMBD1503A-D87Z DIODE ARRAY GP 200V 200MA SOT23
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	MMBD1503A-D87Z	Digi-Reel	27,076		1	1 $0.52 10 $0.318 100 $0.52 1000 $0.13547 10000 $0.10698	Buy Now
	MMBD1503A-D87Z	Cut Tape	27,076		1	1 $0.52 10 $0.318 100 $0.52 1000 $0.13547 10000 $0.10698	Buy Now
	MMBD1503A-D87Z	Reel	10,000		10,000	1 - 10 - 100 - 1000 - 10000 $0.09781	Buy Now
Mouser Electronics	MMBD1503A-D87Z		104,170			1 $0.35 10 $0.24 100 $0.16 1000 $0.097 10000 $0.083	Buy Now
Newark	MMBD1503A-D87Z	Reel			10,000	1 - 10 - 100 - 1000 - 10000 $0.117	Buy Now
Onlinecomponents.com	MMBD1503A-D87Z					1 - 10 - 100 - 1000 - 10000 $0.0837	Buy Now
Rochester Electronics	MMBD1503A-D87Z		76,979		1	1 $0.0883 10 $0.0883 100 $0.083 1000 $0.0751 10000 $0.0751	Buy Now

TME	MMBD1503A-D87Z				1	1 $0.469 10 $0.296 100 $0.164 1000 $0.102 10000 $0.099	Get Quote
Avnet Silica	MMBD1503A-D87Z			11 Weeks	10,000	1 - 10 - 100 - 1000 - 10000 -	Buy Now
Chip1Stop	MMBD1503A-D87Z	Cut Tape	9,700			1 - 10 $0.0926 100 $0.0919 1000 $0.089 10000 $0.089	Buy Now
EBV Elektronik	MMBD1503A-D87Z			12 Weeks	10,000	1 - 10 - 100 - 1000 - 10000 -	Buy Now
onsemi BAS31-D87Z DIODE ARRAY GP 120V 200MA SOT23
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	BAS31-D87Z	Digi-Reel	363		1	1 $0.26 10 $0.16 100 $0.26 1000 $0.06467 10000 $0.0496	Buy Now
	BAS31-D87Z	Cut Tape	363		1	1 $0.26 10 $0.16 100 $0.26 1000 $0.06467 10000 $0.0496	Buy Now
Mouser Electronics	BAS31-D87Z		4,407			1 $0.18 10 $0.122 100 $0.063 1000 $0.058 10000 $0.039	Buy Now
Onlinecomponents.com	BAS31-D87Z					1 - 10 - 100 - 1000 - 10000 $0.0336	Buy Now
Avnet Silica	BAS31-D87Z		20,000	11 Weeks	10,000	1 - 10 - 100 - 1000 - 10000 -	Buy Now
EBV Elektronik	BAS31-D87Z			12 Weeks	10,000	1 - 10 - 100 - 1000 - 10000 -	Buy Now

Master Electronics	BAS31-D87Z					1 - 10 - 100 - 1000 - 10000 $0.0336	Buy Now
New Advantage Corporation	BAS31-D87Z		20,000		1	1 - 10 - 100 - 1000 - 10000 $0.0514	Buy Now
onsemi BSV52_D87Z TRANS NPN 12V 0.2A SOT23-3
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	BSV52_D87Z	Reel				1 - 10 - 100 - 1000 - 10000 -	Buy Now

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D87Z Datasheets Context Search

Catalog Datasheet	MFG & Type	PDF	Document Tags
MPSA65 Abstract: CBVK741B019 F63TNR MMBTA65 MPSA64 PN2222N PZTA65 bel 188 transistor Text: MMBTA65 PZTA65 C C E E C B TO-92 SOT-23 E C B B SOT-223 Mark: 2W PNP Darlington Transistor This device is designed for applications requiring extremely high current gain at currents to 800 mA. Sourced from Process 61. See MPSA64 for characteristics. Absolute Maximum Ratings*	Original	PDF	MMBTA65 PZTA65 OT-23 OT-223 MPSA64 OT-223 MPSA65 CBVK741B019 F63TNR MMBTA65 PN2222N PZTA65 bel 188 transistor
transistor 2N5461 Abstract: No abstract text available Text: MMBF5460 MMBF5461 2N5460 2N5461 2N5462 G D G S TO-92 SOT-23 S Mark: 6E / 61U D P-Channel General Purpose Amplifier This device is designed primarily for low level audio and general purpose applications with high impedance signal sources. Sourced from Process 89.	Original	PDF	2N5460 2N5461 2N5462 MMBF5460 MMBF5461 2N5462 transistor 2N5461
PART NUMBER MARKING SC70-6 Abstract: pin configuration NPN transistor 2N3904 MARKING CODE 21 SC70 Text: FFB3946 FFB3946 E2 B2 C1 Package: SC70-6 Device Marking: .AB Note: The " . " dot signifies Pin 1 C2 B1 Transistor 1 is NPN device, Transistor 2 is PNP device. E1 NPN & PNP General Purpose Amplifier SC70-6 Surface Mount Package ThIs dual complementary device was designed for use as a general purpose amplifier and switching	Original	PDF	FFB3946 SC70-6 2N3904 2N3906 PART NUMBER MARKING SC70-6 pin configuration NPN transistor 2N3904 MARKING CODE 21 SC70
Untitled Abstract: No abstract text available Text: FDN339AN N-Channel 2.5V Specified PowerTrench MOSFET General Description Features This N-Channel 2.5V specified MOSFET is produced using Fairchild Semiconductor's advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and yet maintain low gate charge for	Original	PDF	FDN339AN
Untitled Abstract: No abstract text available Text: FDC6327C Dual N & P-Channel 2.5V Specified PowerTrenchTM MOSFET General Description Features These N & P-Channel 2.5V specified MOSFETs are produced using Fairchild Semiconductor's advanced PowerTrench process that has been especially tailored to minimize on-state resistance and yet maintain low gate	Original	PDF	FDC6327C
Untitled Abstract: No abstract text available Text: FDC5612 60V N-Channel PowerTrenchTM MOSFET General Description Features This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. • 4.3 A, 60 V. RDS ON = 0.055 W	Original	PDF	FDC5612
Untitled Abstract: No abstract text available Text: November 1998 FDG6301N Dual N-Channel, Digital FET General Description Features These dual N-Channel logic level enhancement mode field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process is especially tailored to	Original	PDF	FDG6301N
SSOT-6 Abstract: CBVK741B019 F63TNR FDC602P FDC633N 55A4 V1527 Text: FDC602P P-Channel 2.5V PowerTrench Specified MOSFET General Description Features This P-Channel 2.5V specified MOSFET uses a rugged gate version of Fairchild’s advanced PowerTrench process. It has been optimized for power management applications with a wide range of gate drive voltage	Original	PDF	FDC602P SSOT-6 CBVK741B019 F63TNR FDC602P FDC633N 55A4 V1527
fdn5618p Abstract: No abstract text available Text: FDN5618P 60V P-Channel Logic Level PowerTrench MOSFET General Description Features This 60V P-Channel MOSFET uses Fairchild’s high voltage PowerTrench process. It has been optimized for power management applications. • –1.25 A, –60 V. RDS ON = 0.170 Ω @ VGS = –10 V	Original	PDF	FDN5618P fdn5618p
P-Channel MOSFET code L1A S Abstract: CBVK741B019 F63TNR FDC6324L FDC633N SOIC-16 in20v Text: March 1999 FDC6324L Integrated Load Switch General Description Features These Integrated Load Switches are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimize on-state	Original	PDF	FDC6324L P-Channel MOSFET code L1A S CBVK741B019 F63TNR FDC6324L FDC633N SOIC-16 in20v
CBVK741B019 Abstract: F63TNR FDG6302P FFB3906 FMB3906 MMPQ3906 SC70-6 SOIC-16 4977 gm Text: E2 MMPQ3906 C2 B2 E1 C1 C1 E1 C2 SC70-6 Mark: .2A B2 E3 E4 B4 B2 B1 pin #1 B1 E2 B3 E2 E1 pin #1 B1 NOTE: The pinouts are symmetrical; pin 1 and pin 4 are interchangeable. Units inside the carrier can be of either orientation and will not affect the functionality of the device.	Original	PDF	MMPQ3906 SC70-6 SOIC-16 FFB3906 FMB3906 FMB3906 FFB3906 CBVK741B019 F63TNR FDG6302P MMPQ3906 SC70-6 SOIC-16 4977 gm
FDC6331L Abstract: SSOT-6 ZENER SINGLE COLOR CODE FDC633N 125OC AN1030 CBVK741B019 F63TNR Text: FDC6331L Integrated Load Switch Features General Description • –2.8 A, –8 V. RDS ON = 55 mΩ @ V GS = –4.5 V RDS(ON) = 70 mΩ @ V GS = –2.5 V RDS(ON) = 100 mΩ @ V GS = –1.8 V This device is particularly suited for compact power management in portable electronic equipment where	Original	PDF	FDC6331L FDC6331L SSOT-6 ZENER SINGLE COLOR CODE FDC633N 125OC AN1030 CBVK741B019 F63TNR
sod123 diode Abstract: MARKING CODE diode sod123 W1 sod mark code e2 SOD123 MARKING CODE CBVK741B019 F63TNR MMSZ5221B MMSZ5233B Text: MMSZ5233B DISCRETE POWER AND SIGNAL TECHNOLOGIES 5% TOLERANCE General Description: Features: Half watt, General purpose, Medium Current Surface Mount Zener in the SOD-123 package. The SOD-123 package has the same footprint as the glass mini-melf LL-34 package &	Original	PDF	MMSZ5233B OD-123 LL-34) sod123 diode MARKING CODE diode sod123 W1 sod mark code e2 SOD123 MARKING CODE CBVK741B019 F63TNR MMSZ5221B MMSZ5233B
Marking Code m sc70-6 Abstract: PART NUMBER MARKING SC70-6 FDG6331L 125OC AN1030 CBVK741B019 F63TNR FDG6302P SC70-6 Text: FDG6331L Integrated Load Switch General Description Features This device is particularly suited for compact power management in portable electronic equipment where 2.5V to 8V input and 0.8A output current capability are needed. This load switch integrates a small N-Channel	Original	PDF	FDG6331L SC70-6 SC70-6opment. Marking Code m sc70-6 PART NUMBER MARKING SC70-6 FDG6331L 125OC AN1030 CBVK741B019 F63TNR FDG6302P

diode sod123 W1 Abstract: CBVK741B019 F63TNR MMSZ5221B sod123 E2 Text: SOD-123 Tape and Reel Data SOD123 Packaging Configuration: Figure 1.0 Customized Label Packaging Description: SOD123 parts are shipped in tape. The carrier tape is made from a dissipative carbon filled polycarbonate resin. The cover tape is a multilayer film (Heat Activated	Original	PDF	OD-123 OD123 177cm 330cm diode sod123 W1 CBVK741B019 F63TNR MMSZ5221B sod123 E2
rf transistor mark code H1 Abstract: CBVK741B019 F63TNR MMBTH24 MPSH11 MPSH24 PN2222N Text: MPSH24 / MMBTH24 MPSH24 MMBTH24 C E C B TO-92 B SOT-23 E Mark: 3A NPN RF Transistor This device is designed for common-emitter low noise amplifier and mixer applications with collector currents in the 100 µA to 20 mA range to 300 MHz, and low frequency drift commonbase VHF oscillator applications with high output levels for	Original	PDF	MPSH24 MMBTH24 MPSH24 OT-23 MPSH11 rf transistor mark code H1 CBVK741B019 F63TNR MMBTH24 MPSH11 PN2222N
SSOT-3 Abstract: CBVK741B019 F63TNR FSB649 MMSZ5221B SuperSOTTM -3 Text: FSB649 FSB649 C E B SuperSOTTM-3 NPN Low Saturation Transistor These devices are designed with high current gain and low saturation voltage with collector currents up to 3A continuous. Sourced from Process NC. Absolute Maximum Ratings* Symbol TA = 25°C unless otherwise noted	Original	PDF	FSB649 SSOT-3 CBVK741B019 F63TNR FSB649 MMSZ5221B SuperSOTTM -3
SC70-6 SSOT6 Abstract: SSOT-6 .318 SC70-6 ic 311 pdf datasheets CBVK741B019 F63TNR FDG6302P FFB2222A FFB2227A FFB2907A Text: E2 B2 C2 TRANSISTOR TYPE C1 C1 B1 E1 NPN C2 B2 E2 PNP E1 C1 C2 SC70-6 Mark: .AA FFB2227A / FMB2227A FMB2227A FFB2227A B2 B1 pin #1 E1 SuperSOT-6 Dot denotes pin #1 E2 pin #1 B1 Mark: .001 Dot denotes pin #1 NPN & PNP General Purpose Amplifier This complementary device is for use as a medium power amplifier and	Original	PDF	SC70-6 FFB2227A FMB2227A FFB2227A FFB2222A FFB2907A SC70-6 SSOT6 SSOT-6 .318 SC70-6 ic 311 pdf datasheets CBVK741B019 F63TNR FDG6302P FFB2222A FFB2907A
CBVK741B019 Abstract: F63TNR FDC3512 FDC633N Text: FDC3512 80V N-Channel PowerTrench MOSFET General Description Features This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for	Original	PDF	FDC3512 CBVK741B019 F63TNR FDC3512 FDC633N
CBVK741B019 Abstract: F63TNR FDG6302P FDG6308P SC70-6 marking code 04 sc70-6 Text: FDG6308P P-Channel 1.8V Specified PowerTrench MOSFET General Description Features This P-Channel 1.8V specified MOSFET uses Fairchild’s advanced low voltage PowerTrench process. It has been optimized for battery power management applications. • –0.6 A, –20 V.	Original	PDF	FDG6308P SC70-6 SC70-6 CBVK741B019 F63TNR FDG6302P FDG6308P marking code 04 sc70-6
Untitled Abstract: No abstract text available Text: Si3445DV P-Channel 1.8V Specified PowerTrench MOSFET General Description Features This P-Channel 1.8V specified MOSFET uses Fairchild’s low voltage PowerTrench process. It has been optimized for battery power management applications. • –5.5 A, –20 V.	Original	PDF	Si3445DV
Untitled Abstract: No abstract text available Text: BAS35 BAS35 Connection Diagrams 3 3 3 1405 29 2 SOT-23 1 1 2 2 1 General Purpose High Voltage Diode Sourced from Process 1H. See MMBD1401 for characteristics. Absolute Maximum Ratings* Symbol W IV TA = 25°C unless otherwise noted Parameter Working Inverse Voltage	Original	PDF	BAS35 OT-23 MMBD1401
MPS A06 transistor Abstract: MPS A06 MPSA06 "cross reference" mps 0724 marking A06 amplifier FAIRCHILD SOT-223 MARK Marking code mps Text: MMBTA06 PZTA06 C C E E C B TO-92 B B SOT-23 E C SOT-223 Mark: 1G NPN General Purpose Amplifier This device is designed for general purpose amplifier applications at collector currents to 300 mA. Sourced from Process 33. Absolute Maximum Ratings* Symbol TA = 25°C unless otherwise noted	Original	PDF	MPSA06 MMBTA06 PZTA06 MPSA06 MMBTA06 OT-23 OT-223 MPSA06RA O-92-3 MPS A06 transistor MPS A06 MPSA06 "cross reference" mps 0724 marking A06 amplifier FAIRCHILD SOT-223 MARK Marking code mps
Untitled Abstract: No abstract text available Text: =M l C O N D U C T O R tm FDC6306P Dual P-Channel 2.5V Specified PowerTrench MOSFET General Description Features These P-Channel 2.5V specified MOSFETs are produced using Fairchild Semiconductor's advanced PowerTrench process that has been especially tailored to minimize	OCR Scan	PDF	FDC6306P

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onsemi FDLL4148-D87Z

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D87Z Datasheets Context Search

MPSA65

transistor 2N5461

PART NUMBER MARKING SC70-6

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SSOT-6

fdn5618p

P-Channel MOSFET code L1A S

CBVK741B019

FDC6331L

sod123 diode

Marking Code m sc70-6

diode sod123 W1

rf transistor mark code H1

SSOT-3

SC70-6 SSOT6

CBVK741B019

CBVK741B019

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MPS A06 transistor

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