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    132/DD 127 D TRANSISTOR

    Abstract: No abstract text available
    Text: fZ 7 ^ 7# S G S -T H O M S O N iMinEasiigiLECTiaMnies S T B 3 3 N 10 N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR TYPE V dss 100 STB33N10 V RdS oii Id < 0.06 Q 33 A . . . . • . . . TYPICAL RDS(on) = 0.045 £2 AVALANCHE RUGGED TECHNOLOGY 100% AVALANCHE TESTED


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    PDF STB33N10 O-262) O-263) O-262 O-263 D723D4 132/DD 127 D TRANSISTOR