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    D16NE Search Results

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    D16NE Price and Stock

    STMicroelectronics STD16NE06T4

    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Bristol Electronics STD16NE06T4 2,500 6
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    • 10 $0.9375
    • 100 $0.3516
    • 1000 $0.2625
    • 10000 $0.2438
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    STD16NE06T4 54
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    SGS Semiconductor Ltd STD16NE06

    Electronic Component
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    ComSIT USA STD16NE06 1,945
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    SGS Semiconductor Ltd STD16NE06L

    N-CHANNEL 60V-0.06 OHM-16A DPAK STRIPFET POWER MOSFET Power Field-Effect Transistor, 16A I(D), 60V, 0.085ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    ComSIT USA STD16NE06L 214
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    STMicroelectronics STD16NE06-1

    INSTOCK
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    Chip 1 Exchange STD16NE06-1 1,500
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    D16NE Datasheets (1)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    D16NE10L STMicroelectronics N-Channel 100V - 0.07 ohm - 16A DPAK STripFET POWER MOSFET Original PDF

    D16NE Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    dc-acconverters

    Abstract: d16ne S1737 STD16NE10
    Text: D16NE10  N - CHANNEL 100V - 0.07Ω - 16A - IPAK/DPAK STripFET MOSFET TYPE ST D16NE10 • ■ ■ ■ ■ ■ ■ V DSS R DS on ID 100 V < 0.1 Ω 16 A TYPICAL RDS(on) = 0.07 Ω EXCEPTIONAL dv/dt CAPABILITY AVALANCHE RUGGED TECHNOLOGY 100% AVALANCHE TESTED


    Original     		STD16NE10 D16NE10 O-251) O-252) dc-acconverters d16ne S1737 STD16NE10 PDF

    D16NE06

    Abstract: D16NE06L ST16NE06 STD16NE06L-1
    Text: D16NE06L-1  N - CHANNEL 60V - 0.07 Ω - 16A - TO-251 STripFET ” POWER MOSFET PRELIMINARY DATA T YPE ST D16NE06L-1 • ■ ■ ■ ■ V DSS R DS o n ID 60 V < 0.085 Ω 16 A TYPICAL RDS(on) = 0.07 Ω EXCEPTIONAL dv/dt CAPABILITY 100% AVALANCHE TESTED


    Original     		STD16NE06L-1 O-251 D16NE06L-1 D16NE06 D16NE06L ST16NE06 STD16NE06L-1 PDF

    STD16NE10

    Abstract: No abstract text available
    Text: D16NE10  N - CHANNEL 100V - 0.07Ω - 16A - IPAK/DPAK STripFET MOSFET TYPE ST D16NE10 • ■ ■ ■ ■ ■ ■ V DSS R DS on ID 100 V < 0.1 Ω 16 A TYPICAL RDS(on) = 0.07 Ω EXCEPTIONAL dv/dt CAPABILITY AVALANCHE RUGGED TECHNOLOGY 100% AVALANCHE TESTED


    Original     		STD16NE10 D16NE10 O-251) O-252) STD16NE10 PDF

    D16NE10L

    Abstract: JESD97 STD16NE10L STD16NE10LT4
    Text: D16NE10L N-channel 100V - 0.07Ω - 16A - DPAK STripFET Power MOSFET General features Type VDSSS RDS on ID D16NE10L 100V <0.10Ω 16A 3 • Avalanche rugged technology ■ Low gate charge ■ High current capability ■ 175°C operating temperature


    Original     		STD16NE10L D16NE10L JESD97 STD16NE10L STD16NE10LT4 PDF

    Untitled

    Abstract: No abstract text available
    Text: D16NE10L N-channel 100V - 0.07Ω - 16A - DPAK STripFET Power MOSFET General features Type VDSSS RDS on ID D16NE10L 100V <0.10Ω 16A 3 • Avalanche rugged technology ■ Low gate charge ■ High current capability ■ 175°C operating temperature


    Original     		STD16NE10L STD16NE10LT4 D16NEerein PDF

    D16NE10L

    Abstract: JESD97 STD16NE10L STD16NE10LT4 d16n
    Text: D16NE10L N-channel 100V - 0.07Ω - 16A - DPAK STripFET Power MOSFET General features Type VDSSS RDS on ID D16NE10L 100V <0.10Ω 16A 3 • Avalanche rugged technology ■ Low gate charge ■ High current capability ■ 175°C operating temperature


    Original     		STD16NE10L D16NE10L JESD97 STD16NE10L STD16NE10LT4 d16n PDF