D1619 Search Results

Contextual Info: DATA SHEET SILICON TRANSISTORS 2SB1116, 1116A PNP SILICON EPITAXIAL TRANSISTOR FOR LOW-FREQUENCY POWER AMPLIFIERS AND MID-SPEED SWITCHING FEATURES PACKAGE DRAWING UNIT: mm • Low VCE(sat) VCE(sat) = −0.20 V TYP. (IC = −1.0 A, IB = −50 mA) • High PT in small dimension with general-purpose

mc1498

Abstract: D1619 dali schematic MC1498A DATA MC1489 MC1489A SN55189 SN55189A SN75189 SN75189A
Contextual Info: MC1489, MC1489A, SN55189, SN55189A, SN75189, SN75189A QUAD LINE RECEIVERS SLLS095A —D 1619, SEPTEM BER 1 9 7 3 - REVISED MARCH 1993 SN55189, SN55189A . . . J O R W PACKAGE MC1489, MC1489A, SN751S9, SN75189A □, N, OR N S t PACKAGE TOP VIEW Input Resistance. . . 3 k£2 to 7 kQ

Marvell 88e1111 register map

Abstract: 88E1111 88E1111 PHY registers map 88E1111 register map 88E1111 config 88E1111 registers Marvell PHY 88E1111 alaska register map Marvell PHY 88E1111 MDIO read write sfp Marvell 88E1111 application note Marvell PHY 88E111 alaska
Contextual Info: LatticeECP3 Marvell SGMII Physical/MAC Layer Interoperability December 2009 Technical Note TN1197 Introduction This technical note describes an SGMII physical/MAC layer interoperability test between a LatticeECP3 device and the Marvell 88E1111 PHY. Specifically, the document discusses the following topics:

2SA1376

Abstract: transistor 2sc3478 transistor 2sa1376 2sc3478a
Contextual Info: DATA SHEET SILICON TRANSISTORS 2SA1376, 1376A PNP SILICON EPITAXIAL TRANSISTOR FOR HIGH VOLTAGE AMPLIFIERS FEATURES PACKAGE DRAWING UNIT: mm • High voltage VCEO: −180 V / −200 V (2SA1376/2SA1376A) • Excellent hFE linearity • High total power dissipation in small dimension:

2SJ132

Abstract: 2SJ132-Z
Contextual Info: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid

2SJ132

Abstract: 2SJ132-Z
Contextual Info: お客様各位 カタログ等資料中の旧社名の扱いについて 2010 年 4 月 1 日を以って NEC エレクトロニクス株式会社及び株式会社ルネサステクノロジ が合併し両社の全ての事業が当社に承継されております。従いまして、本資料中には旧社

2SD1691

Abstract: 2SB1151
Contextual Info: PRELIMINARY PRODUCT INFORMATION SILICON POWER TRANSISTOR 2SD1691 NPN SILICON EPITAXIAL TRANSISTOR FOR LOW-FREQUENCEY POWER AMPLIFIERS AND MID-SPEED SWITCHING FEATURES PACKAGE DRAWING UNIT: mm • Large current capacity and low VCE(sat): IC(DC) = 5.0 A, IC(pulse) = 8.0 A

2SB1149

Abstract: 2SD1692
Contextual Info: PRELIMINARY PRODUCT INFORMATION SILICON POWER TRANSISTOR 2SD1692 NPN SILICON EPITAXIAL TRANSISTOR DARLINGTON CONNECTION FEATURES PACKAGE DRAWING (UNIT: mm) • High DC current gain due to Darlington connection • Large current capacity and low VCE(sat)

2SB1149

Abstract: 2SD1692
Contextual Info: DATA SHEET SILICON POWER TRANSISTOR 2SD1692 NPN SILICON EPITAXIAL TRANSISTOR DARLINGTON CONNECTION FEATURES PACKAGE DRAWING (UNIT: mm) • High DC current gain due to Darlington connection • Large current capacity and low VCE(sat) • Large power dissipation TO-126 type power transistor

2sJ133 MOSFET

Abstract: 2SJ133 2SJ133-Z 133Z
Contextual Info: データ・シート MOS形電界効果パワー・トランジスタ MOS Field Effect Power Transistors 2SJ133,133-Z Pチャネル・パワー MOSFET スイッチング用 特 徴 外形図（単位：mm） ★ 6.5 ±0.2 ○2SJ133-ZはハイブリッドIC実装に最適なリード加工品です。

Contextual Info: DATA SHEET SILICON TRANSISTORS 2SD1616, 2SD1616A NPN SILICON EPITAXIAL TRANSISTOR FOR LOW-FREQUENCY POWER AMPLIFIERS AND MID-SPEED SWITCHING FEATURES PACKAGE DRAWING UNIT: mm • Low VCE(sat): VCE(sat) = 0.15 V TYP. (IC = 1.0 A, IB = 50 mA) • Large PT in small dimension with versatility

2SD1581

Contextual Info: DATA SHEET SILICON TRANSISTOR 2SD1581 NPN SILICON EPITAXIAL TRANSISTOR FOR LOW-FREQUENCY POWER AMPLIFIERS The 2SD1581 is a single type super high hFE transistor and low PACKAGE DRAWING UNIT: mm collector saturation voltage and low power loss. This transistor is

Contextual Info: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid

Contextual Info: DATA SHEET MOS FIELD EFFECT POWER TRANSISTOR 2SJ132,132-Z P-CHANNEL POWER MOSFET FOR SWITCHING <R> FEATURES PACKAGE DRAWING UNIT: mm 5.0 ±0.2 Unit VGS = 0 V −30 V VGSS VDS = 0 V m20 V Drain current (DC) ID(DC) TC = 25°C m2.0 A Drain current (pulse) ID(pulse)

2SA1376

Abstract: 2sc3478a 2SA1376A 2SC3478 2SA1376-A
Contextual Info: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid

2SJ133

Abstract: 2SJ133-Z
Contextual Info: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid

1116a

Contextual Info: DATA SHEET SILICON TRANSISTORS 2SD1616, 2SD1616A NPN SILICON EPITAXIAL TRANSISTOR FOR LOW-FREQUENCY POWER AMPLIFIERS AND MID-SPEED SWITCHING FEATURES PACKAGE DRAWING UNIT: mm • Low VCE(sat): VCE(sat) = 0.15 V TYP. (IC = 1.0 A, IB = 50 mA) • Large PT in small dimension with versatility

D1619

Abstract: 2SJ133 2SJ133-Z C11531E
Contextual Info: DATA SHEET MOS FIELD EFFECT POWER TRANSISTORS 2SJ133, 2SJ133-Z P-CHANNEL POWER MOS FET FOR SWITCHING FEATURES PACKAGE DRAWING UNIT: mm • Gate drive available at logic level (VGS = –4 V) • High current control available in small dimension due to low RDS(on) (≅ 0.45 Ω)

d2023

Abstract: dram 4mx4 interfacing sram and dram MC516 MC68360
Contextual Info: DRAFT COPY Interfacing the QUICC to a MCM516400 4Mx4 10/12 column/row DRAM By Gordon Lawton Motorola, East Kilbride, Scotland One of the most useful functions of the SIM block of the MC68360 is the Memory Controller. This enables the MC68360 to interface gluelessly to

Contextual Info: DATA SHEET SILICON TRANSISTORS 2SA1376, 1376A PNP SILICON EPITAXIAL TRANSISTOR FOR HIGH VOLTAGE AMPLIFIERS FEATURES PACKAGE DRAWING UNIT: mm • High voltage VCEO: −180 V / −200 V (2SA1376/2SA1376A) • Excellent hFE linearity • High total power dissipation in small dimension:

2SJ133

Abstract: 2SJ133-Z 2sJ133 MOSFET
Contextual Info: お客様各位 カタログ等資料中の旧社名の扱いについて 2010 年 4 月 1 日を以って NEC エレクトロニクス株式会社及び株式会社ルネサステクノロジ が合併し両社の全ての事業が当社に承継されております。従いまして、本資料中には旧社

2sJ132 MOSFET

Abstract: 2SJ132 2SJ132-Z 132-Z
Contextual Info: DATA SHEET MOS FIELD EFFECT POWER TRANSISTOR 2SJ132,132-Z P-CHANNEL POWER MOSFET FOR SWITCHING PACKAGE DRAWING UNIT: mm FEATURES 6.5 ±0.2 • 2SJ132-Z is a lead process product and is ideal for mounting a hybrid IC. 5.0 ±0.2 −30 V VGSS VDS = 0 V m20

d2023

Abstract: dram 4mx4 MC68360 motorola 16M CMOS DRAM D2831
Contextual Info: Freescale Semiconductor, Inc. Freescale Semiconductor, Inc. DRAFT COPY Interfacing the QUICC to a MCM516400 4Mx4 10/12 column/row DRAM By Gordon Lawton Motorola, East Kilbride, Scotland One of the most useful functions of the SIM block of the MC68360 is the

c4460

Abstract: d1651 d1047 k d1047 B817 C2621 D1650 B1269 c4106 D895
Contextual Info: SA\YO ^ Q u i c k S e 1 e c t i o n G u i d S P A CEO I > < V 1 5 1 8 2 K 11 K5 9 K15 K2 1 K3 1 K4 0 3 1 6 78 2 5 4 A 11 C28 C2 9 K5 4 77 39 99 4 2 5 Type T ransistors 3 4 «¡D a rlin g to n 5 8 mA ) 1 2 K4 2 7 K4 4 4 5 K546 K7 7 2 K2 2 7 0 3 K3 0 4