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    OTTO Engineering Inc LP7-D1412A22

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    D1412A Datasheets Context Search

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    2SD1412A

    Abstract: No abstract text available
    Text: D1412A TOSHIBA Transistor Silicon NPN Triple Diffused Type D1412A High-Current Switching Applications Power Amplifier Applications • Unit: mm Low saturation voltage: VCE sat = 0.4 V (max) at IC = 4 A Absolute Maximum Ratings (Tc = 25°C) Characteristics


    Original     		2SD1412A 2-10R1A 2SD1412A PDF

    D1412A

    Abstract: 2SD1412A D1412
    Text: D1412A TOSHIBA Transistor Silicon NPN Triple Diffused Type D1412A High-Current Switching Applications Power Amplifier Applications • Unit: mm Low saturation voltage: VCE sat = 0.4 V (max) at IC = 4 A Maximum Ratings (Tc = 25°C) Characteristics Symbol


    Original     		2SD1412A 2-10R1A D1412A 2SD1412A D1412 PDF

    D1412A

    Abstract: 2SD1412A d1412
    Text: D1412A TOSHIBA Transistor Silicon NPN Triple Diffused Type D1412A High-Current Switching Applications Power Amplifier Applications • Unit: mm Low saturation voltage: VCE sat = 0.4 V (max) at IC = 4 A Absolute Maximum Ratings (Tc = 25°C) Characteristics


    Original     		2SD1412A D1412A 2SD1412A d1412 PDF