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    D14.3 PACKAGE Search Results

    D14.3 PACKAGE Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TPH9R00CQH Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 150 V, 64 A, 0.009 Ohm@10V, SOP Advance / SOP Advance(N) Visit Toshiba Electronic Devices & Storage Corporation
    TPH9R00CQ5 Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 150 V, 64 A, 0.009 Ω@10 V, High-speed diode, SOP Advance / SOP Advance(N) Visit Toshiba Electronic Devices & Storage Corporation
    TPH1R306PL Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 60 V, 100 A, 0.00134 Ω@10 V, SOP Advance / SOP Advance(N) Visit Toshiba Electronic Devices & Storage Corporation
    TPHR8504PL Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 40 V, 150 A, 0.00085 Ω@10 V, SOP Advance / SOP Advance(N) Visit Toshiba Electronic Devices & Storage Corporation
    TPH2R408QM Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 80 V, 120 A, 0.00243 Ohm@10V, SOP Advance Visit Toshiba Electronic Devices & Storage Corporation

    D14.3 PACKAGE Datasheets (1)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    D14.3 Package Intersil 14 LEAD CERAMIC DUAL-IN-LINE METAL SEAL PACKAGE Original PDF

    D14.3 PACKAGE Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    CDIP2-T14

    Abstract: D143
    Text: Hermetic Packages for Integrated Circuits Ceramic Dual-In-Line Metal Seal Packages SBDIP D14.3 MIL-STD-1835 CDIP2-T14 (D-1, CONFIGURATION C) LEAD FINISH c1 -A- 14 LEAD CERAMIC DUAL-IN-LINE METAL SEAL PACKAGE -DBASE METAL E b1 M (b) M -Bbbb S C A - B S SECTION A-A


    Original     		MIL-STD-1835 CDIP2-T14 CDIP2-T14 D143 PDF

    CDIP2-T14

    Abstract: No abstract text available
    Text: Ceramic Package Ceramic Dual-In-Line Metal Seal Packages SBDIP c1 -A- D14.3 MIL-STD-1835 CDIP2-T14 (D-1, CONFIGURATION C) LEAD FINISH 14 LEAD CERAMIC DUAL-IN-LINE METAL SEAL PACKAGE -DBASE METAL E b1 M (b) M -Bbbb S C A - B S INCHES (c) SECTION A-A D S D


    Original     		MIL-STD-1835 CDIP2-T14 CDIP2-T14 PDF

    5962F9581304VXC

    Abstract: 5962F9581307VXC 5962F9581306VXC D14.3 Package HS-303AEH K14.A Package smd k14a D143 "top mark" intersil 303arh
    Text: Radiation Hardened CMOS Dual SPDT Analog Switch HS-303ARH, HS-303AEH, HS-303BRH, HS-303BEH The HS-303ARH, HS-303AEH, HS-303BRH, HS-303BEH analog Features switches are monolithic devices fabricated using Intersil’s dielectrically isolated Radiation Hardened Silicon Gate RSG


    Original     		HS-303ARH, HS-303AEH, HS-303BRH, HS-303BEH HS-303RH, 300kRAD 5962F9581304VXC 5962F9581307VXC 5962F9581306VXC D14.3 Package HS-303AEH K14.A Package smd k14a D143 "top mark" intersil 303arh PDF

    d143 transistor

    Abstract: D143 5962F9861302VXC 5962F9861303VCC
    Text: Radiation Hardened Quad Voltage Comparator HS-139RH, HS-139EH Features The Radiation Hardened HS-139RH, HS-139EH consists of four independent single or dual supply voltage comparators on a single monolithic substrate. The common mode input voltage range includes ground, even when operated from a single


    Original     		HS-139RH, HS-139EH HS-139EH FN3573 d143 transistor D143 5962F9861302VXC 5962F9861303VCC PDF

    d143 T transistor

    Abstract: transistor d143 5962R9581201QCC HI302
    Text: Radiation Hardened CMOS Dual DPST Analog Switch HS-302RH, HS-302EH Features Intersil’s Satellite Applications Flow SAF devices are fully tested and guaranteed to 100kRAD Total Dose. These QML Class T devices are processed to a standard flow intended to


    Original     		HS-302RH, HS-302EH 100kRAD HS-302EH FN4603 d143 T transistor transistor d143 5962R9581201QCC HI302 PDF

    5962F9861303VXC

    Abstract: transistor d143
    Text: Radiation Hardened Quad Voltage Comparator HS-139RH, HS-139EH Features The Radiation Hardened HS-139RH, HS-139EH consists of four independent single or dual supply voltage comparators on a single monolithic substrate. The common mode input voltage range includes ground, even when operated from a single


    Original     		HS-139RH, HS-139EH HS-139EH MIL-PRF-38535 038mm) FN3573 5962F9861303VXC transistor d143 PDF

    K14.A Package

    Abstract: 5962F9861301VXC HS9-139RH-Q 5962F9861301QCC 5962F9861301QXC 5962F9861301VCC HS1-139RH-Q HS-139RH D14.3 Package HS139RH
    Text: HS-139RH Data Sheet May 19, 2009 Radiation Hardened Quad Voltage Comparator FN3573.4 Features • QML Qualified Per MIL-PRF-38535 Requirements The Radiation Hardened HS-139RH consists of four independent single or dual supply voltage comparators on a single monolithic substrate. The common mode input voltage


    Original     		HS-139RH FN3573 MIL-PRF-38535 HS-139RH K14.A Package 5962F9861301VXC HS9-139RH-Q 5962F9861301QCC 5962F9861301QXC 5962F9861301VCC HS1-139RH-Q D14.3 Package HS139RH PDF

    IC SAF 0300 DATA

    Abstract: IC SAF 0300 SMD Transistor Y14 transistor d143
    Text: Radiation Hardened CMOS Dual DPST Analog Switch HS-302RH, HS-302EH Features Intersil’s Satellite Applications Flow SAF devices are fully tested and guaranteed to 100kRAD Total Dose. These QML Class T devices are processed to a standard flow intended to


    Original     		HS-302RH, HS-302EH 100kRAD MIL-PRF-38535 HS-302EH 038mm) FN4603 IC SAF 0300 DATA IC SAF 0300 SMD Transistor Y14 transistor d143 PDF

    Untitled

    Abstract: No abstract text available
    Text: Radiation Hardened, Low Noise Quad Operational Amplifiers HS-5104ARH, HS-5104AEH Features The HS-5104ARH, HS-5104AEH are radiation hardened, monolithic quad operational amplifiers that provide highly reliable performance in harsh radiation environments. Excellent noise characteristics coupled with a unique array of


    Original     		HS-5104ARH, HS-5104AEH HS-5104AEH 100kRAD FN3025 PDF

    FN8727

    Abstract: No abstract text available
    Text: DATASHEET Radiation Hardened Fast Sample and Hold HS-2420EH Features The HS-2420EH is a radiation hardened monolithic circuit consisting of a high performance operational amplifier with its output in series with an ultra-low leakage analog switch and a MOSFET input unity gain amplifier.


    Original     		HS-2420EH HS-2420EH FN8727 PDF

    Untitled

    Abstract: No abstract text available
    Text: HS-2420RH Data Sheet December 2, 2013 Radiation Hardened Fast Sample and Hold The HS-2420RH is a radiation hardened monolithic circuit consisting of a high performance operational amplifier with its output in series with an ultra-low leakage analog switch


    Original     		HS-2420RH HS-2420RH PDF

    ir1253

    Abstract: 74hc273 ov534 cd401068 74hct273 AN6525 Harris CMOS Integrated Circuits cd401106 AN7323 CV7030
    Text: _ _ _ _ _ CMOS LOGIC ICS- 1 PRODUCT SELECTION GUIDE GENERAL INFORMATION 1 LOGIC ORDERING INFORMATION. 1-3 HC/HCT High Speed CMOS Nomenclature.


    OCR Scan     		CD4000 ir1253 74hc273 ov534 cd401068 74hct273 AN6525 Harris CMOS Integrated Circuits cd401106 AN7323 CV7030 PDF

    intersil DATE CODE MARKING

    Abstract: HCS32D HCS32DMSR HCS32HMSR HCS32K HCS32KMSR HCS32MS
    Text: HCS32MS Data Sheet April 11, 2007 Radiation Hardened Quad 2-Input OR Gate FN3057.1 Features • 3 Micron Radiation Hardened SOS CMOS The Intersil HCS32MS is a Radiation Hardened Quad 2-Input OR Gate. A low on both inputs forces the output to a low state.


    Original     		HCS32MS FN3057 HCS32MS intersil DATE CODE MARKING HCS32D HCS32DMSR HCS32HMSR HCS32K HCS32KMSR PDF

    Untitled

    Abstract: No abstract text available
    Text: HCS32MS Data Sheet April 11, 2007 Radiation Hardened Quad 2-Input OR Gate FN3057.1 Features • 3 Micron Radiation Hardened SOS CMOS The Intersil HCS32MS is a Radiation Hardened Quad 2-Input OR Gate. A low on both inputs forces the output to a low state.


    Original     		HCS32MS FN3057 HCS32MS PDF

    Untitled

    Abstract: No abstract text available
    Text: 3 HCTS08MS Radiation Hardened Quad 2-Input AND Gate August 1995 Pinouts Features • 3 Micron Radiation Hardened SOS CMOS 14 LEAD CERAMIC DUAL-IN-LINE METAL SEAL PACKAGE SBDIP) MIL-STD-1835 CDIP2-T14 TOP VIEW • Total Dose 200K RAD(Si) • SEP Effective LET No Upsets: >100 MEV-cm2/mg


    OCR Scan     		HCTS08MS MIL-STD-1835 CDIP2-T14 038mm) PDF

    HCTS08D

    Abstract: HCTS08DMSR HCTS08HMSR HCTS08K HCTS08KMSR HCTS08MS Mil-Std-883 Wire Bond Pull Method 2011
    Text: HCTS08MS S E M I C O N D U C T O R Radiation Hardened Quad 2-Input AND Gate August 1995 Features Pinouts • 3 Micron Radiation Hardened SOS CMOS 14 LEAD CERAMIC DUAL-IN-LINE METAL SEAL PACKAGE SBDIP MIL-STD-1835 CDIP2-T14 TOP VIEW • Total Dose 200K RAD(Si)


    Original     		HCTS08MS MIL-STD-1835 CDIP2-T14 -55oC 125oC 038mm) HCTS08D HCTS08DMSR HCTS08HMSR HCTS08K HCTS08KMSR HCTS08MS Mil-Std-883 Wire Bond Pull Method 2011 PDF

    HCTS02DMSR

    Abstract: HCTS02HMSR HCTS02K HCTS02KMSR HCTS02MS HCTS02D
    Text: HCTS02MS S E M I C O N D U C T O R Radiation Hardened Quad 2-Input NOR Gate August 1995 Features Pinouts • 3 Micron Radiation Hardened SOS CMOS 14 LEAD CERAMIC DUAL-IN-LINE METAL SEAL PACKAGE SBDIP MIL-STD-1835 CDIP2-T14 TOP VIEW • Total Dose 200K RAD(Si)


    Original     		HCTS02MS MIL-STD-1835 CDIP2-T14 -55oC 125oC 038mm) HCTS02DMSR HCTS02HMSR HCTS02K HCTS02KMSR HCTS02MS HCTS02D PDF

    Untitled

    Abstract: No abstract text available
    Text: HCTS08MS S E M I C O N D U C T O R Radiation Hardened Quad 2-Input AND Gate August 1995 Features Pinouts • 3 Micron Radiation Hardened SOS CMOS 14 LEAD CERAMIC DUAL-IN-LINE METAL SEAL PACKAGE SBDIP MIL-STD-1835 CDIP2-T14 TOP VIEW • Total Dose 200K RAD(Si)


    Original     		HCTS08MS MIL-STD-1835 CDIP2-T14 -55oC 125oC 038mm) PDF

    be5l

    Abstract: CA3046 equivalent lg 15.6 pinout CA3046 CA3046M BE4L d143 T transistor
    Text: CA3045' CA3046 H A R R 'S M S E M I C O N D U C T O R J M • W » W General Purpose NPN Transistor Arrays N o vem b er 1996 Features Description • Two Matched Transistors T he C A 3 04 5 and C A 3 04 6 each co n sist o f five general p u rpo se silicon NPN transisto rs on a com m on m on olithic


    OCR Scan     		CA3045' CA3046 CA3045, be5l CA3046 equivalent lg 15.6 pinout CA3046 CA3046M BE4L d143 T transistor PDF

    Untitled

    Abstract: No abstract text available
    Text: HCTS08MS Semiconductor Radiation Hardened Quad 2-Input AND Gate August 1995 Features Pinouts • 3 Micron Radiation Hardened SOS CMOS 14 LEAD CERAM IC DUAL-IN-LINE METAL SEAL PACKAGE SBDIP M IL-STD-1835 CDIP2-T14 TOP VIEW • Total Dose 200K RAD(Si) • SEP Effective LET No Upsets: >100 MEV-cm2/mg


    OCR Scan     		HCTS08MS IL-STD-1835 CDIP2-T14 PDF

    HCTS02D

    Abstract: HCTS02DMSR HCTS02HMSR HCTS02K HCTS02KMSR HCTS02MS
    Text: HCTS02MS Radiation Hardened Quad 2-Input NOR Gate August 1995 Features Pinouts • 3 Micron Radiation Hardened SOS CMOS 14 LEAD CERAMIC DUAL-IN-LINE METAL SEAL PACKAGE SBDIP MIL-STD-1835 CDIP2-T14 TOP VIEW • Total Dose 200K RAD(Si) • SEP Effective LET No Upsets: >100 MEV-cm2/mg


    Original     		HCTS02MS MIL-STD-1835 CDIP2-T14 -55oC 125oC HCTS02D HCTS02DMSR HCTS02HMSR HCTS02K HCTS02KMSR HCTS02MS PDF

    Untitled

    Abstract: No abstract text available
    Text: HCTS02MS HARRIS S E M I C O N D U C T O R Radiation Hardened Quad 2-Input NOR Gate August 1995 Pinouts Features 3 Micron Radiation Hardened SOS CMOS 14 LEAD CERAMIC DUAL-IN-LINE METAL SEAL PACKAGE SBDIP MIL-STD-1835 CDIP2-T14 Total Dose 200K RAD(Si) TOP VIEW


    OCR Scan     		HCTS02MS MIL-STD-1835 CDIP2-T14 PDF

    HCTS08D

    Abstract: HCTS08DMSR HCTS08HMSR HCTS08K HCTS08KMSR HCTS08MS
    Text: HCTS08MS Radiation Hardened Quad 2-Input AND Gate August 1995 Features Pinouts • 3 Micron Radiation Hardened SOS CMOS 14 LEAD CERAMIC DUAL-IN-LINE METAL SEAL PACKAGE SBDIP MIL-STD-1835 CDIP2-T14 TOP VIEW • Total Dose 200K RAD(Si) • SEP Effective LET No Upsets: >100 MEV-cm2/mg


    Original     		HCTS08MS MIL-STD-1835 CDIP2-T14 -55oC 125oC 038mm) HCTS08D HCTS08DMSR HCTS08HMSR HCTS08K HCTS08KMSR HCTS08MS PDF

    Untitled

    Abstract: No abstract text available
    Text: HCTS02MS Semiconductor Radiation Hardened Quad 2-Input NOR Gate August 1995 Pinouts Features • 3 Micron Radiation Hardened SOS CMOS 14 LEAD CERAM IC DUAL-IN-LINE METAL SEAL PACKAGE SBDIP M IL-STD-1835 CDIP2-T14 TOP VIEW • Total Dose 200K RAD(Si) • SEP Effective LET No Upsets: >100 MEV-cm2/mg


    OCR Scan     		HCTS02MS IL-STD-1835 CDIP2-T14 PDF