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D12S60C Abstract: IDH12S60C JESD22 uc1020 Text: IDH12S60C 2ndGeneration thinQ!TM SiC Schottky Diode Product Summary Features • Revolutionary semiconductor material - Silicon Carbide • Switching behavior benchmark V DC 600 V Qc 30 nC IF 12 A • No reverse recovery/ No forward recovery • No temperature influence on the switching behavior	Original	PDF	IDH12S60C PG-TO220-2 D12S60C D12S60C IDH12S60C JESD22 uc1020
D12S60C Abstract: IDT12S60 R600 IDT12S60C Text: IDT12S60C 2nd Generation thinQ!TM SiC Schottky Diode Features • Revolutionary semiconductor material - Silicon Carbide • Switching behavior benchmark Product Summary V DC 600 V Qc 30 nC IF 12 A • No reverse recovery/ No forward recovery • No temperature influence on the switching behavior	Original	PDF	IDT12S60C PG-TO220-2-2 IDT12S60C PG-TO220-2-2 D12S60C IDT12S60 R600
Untitled Abstract: No abstract text available Text: IDT12S60C 2nd Generation thinQ! SiC Schottky Diode Features Product Summary V DC 600 V • Switching behavior benchmark Qc 30 nC • No reverse recovery/ No forward recovery I F @ T C < 140 °C 12 A • Temperature independent switching behavior I F @ T C < 100 °C	Original	PDF	IDT12S60C PG-TO220-2-2 20mA2)
D12S60C Abstract: d12s60 PG-TO220 IDT12S60C JESD22 Text: IDT12S60C 2nd Generation thinQ!TM SiC Schottky Diode Features • Revolutionary semiconductor material - Silicon Carbide • Switching behavior benchmark Product Summary V DC 600 V Qc 30 nC IF 12 A • No reverse recovery/ No forward recovery • No temperature influence on the switching behavior	Original	PDF	IDT12S60C PG-TO220-2-2 D12S60C D12S60C d12s60 PG-TO220 IDT12S60C JESD22
IDH12S60C Abstract: d12s60 D12S60C Text: IDH12S60C 2ndGeneration thinQ!TM SiC Schottky Diode Product Summary Features • Revolutionary semiconductor material - Silicon Carbide • Switching behavior benchmark • No reverse recovery/ No forward recovery VDC 600 V Qc 30 nC IF 12 A • No temperature influence on the switching behavior	Original	PDF	IDH12S60C IDH12S60C PG-TO220-2 D12S60C d12s60
D12S60C Abstract: pg-to220-2-2 IDT12S60C JESD22 Text: IDT12S60C 2nd Generation thinQ!TM SiC Schottky Diode Features • Revolutionary semiconductor material - Silicon Carbide • Switching behavior benchmark Product Summary V DC 600 V Qc 30 nC IF 12 A • No reverse recovery/ No forward recovery • No temperature influence on the switching behavior	Original	PDF	IDT12S60C PG-TO220-2-2 D12S60C PG-TO220-2-2: D12S60C pg-to220-2-2 IDT12S60C JESD22
Untitled Abstract: No abstract text available Text: IDH12S60C 2ndGeneration thinQ!TM SiC Schottky Diode Product Summary Features • Revolutionary semiconductor material - Silicon Carbide • Switching behavior benchmark • No reverse recovery/ No forward recovery VDC 600 V Qc 30 nC IF 12 A • No temperature influence on the switching behavior	Original	PDF	IDH12S60C PG-TO220-2 D12S60C