D1255
Abstract: No abstract text available
Text: S T U/D1255P L S amHop Microelectronics C orp. Arp,20 2005 ver1.1 P -C hannel E nhancement Mode Field E ffect Transistor F E AT UR E S P R ODUC T S UMMAR Y V DS S R DS ON ID ( m W ) Max S uper high dense cell design for low R DS (ON ). R ugged and reliable.
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U/D1255P
O-252
O-251
O-252AA
Tube/TO-252
O-252
D1255
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Untitled
Abstract: No abstract text available
Text: S T U/D1255P L S amHop Microelectronics C orp. J an.03 2005 P -C hannel E nhancement Mode Field E ffect Transistor F E AT UR E S P R ODUC T S UMMAR Y V DS S R DS ON ID ( m W ) Max S uper high dense cell design for low R DS (ON ). R ugged and reliable. 110 @ V G S = -10V
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U/D1255P
O-252
O-251
O-252AA
O-252
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Untitled
Abstract: No abstract text available
Text: S T U/D1255P L S amHop Microelectronics C orp. Arp,20 2005 ver1.1 P -C hannel E nhancement Mode Field E ffect Transistor F E AT UR E S P R ODUC T S UMMAR Y V DS S R DS ON ID ( m W ) Max S uper high dense cell design for low R DS (ON ). R ugged and reliable.
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U/D1255P
O-252
O-251
O-252AA
Tube/TO-252
O-252
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EPIGAP Optoelektronik
Abstract: No abstract text available
Text: Photodiode-Chip EPC-525-0.9 17.04.2009 rev. 05 Wavelength range Type Technology Electrodes Green, selective Integrated filter GaP P anode up typ. dimensions (µm) 860 800 720 typ. thickness anode gold alloy, 1.5 µm Description Narrow bandwidth and high spectral sensitivity in
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EPC-525-0
D-12555
EPIGAP Optoelektronik
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Untitled
Abstract: No abstract text available
Text: LED - Chip ELC-770-15 26.04.2012 rev. 03 Radiation Type Technology Electrodes Infrared DDH AlGaAs/AlGaAs P anode up typ. dimensions (µm) 325 Ø120 typ. thickness 180 µm anode gold alloy, 1.5 µm cathode gold alloy, 0.5 µm structured, 25% covered LED-03
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ELC-770-15
LED-03
EL2-770-15
D-12555
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Untitled
Abstract: No abstract text available
Text: LED - Chip ELC-840-28-1 01.07.2011 rev. 07 Radiation Type Technology Electrodes Infrared DDH AlGaAs/AlGaAs N cathode up typ. dimensions (µm) 460 360 300 typ. thickness 150 (±25) µm cathode gold alloy, 1.5 µm anode gold alloy, 0.5 µm structured, 25% covered
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ELC-840-28-1
PD-02
EL2-840-28-1
D-12555
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Untitled
Abstract: No abstract text available
Text: LED - Chip EL1-750-21 01.07.2011 rev. 06 Radiation Type Technology Electrodes Infrared DDH AlGaAs/AlGaAs N cathode up typ. dimensions (µm) 1000 typ. thickness 150 (±25) µm 1000 cathode gold alloy, 1.5 µm anode gold alloy, 0.5 µm structured, 25% covered
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EL1-750-21
PoC-05
D-12555
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Untitled
Abstract: No abstract text available
Text: LED - Chip EL1-950-11 01.12.2011 rev. 03 Radiation Type Technology Electrodes Infrared DH AlGaAs/GaAs P anode up typ. dimensions (µm) 1000 typ. thickness 260 (±20) µm 1000 anode gold alloy, 1.5 µm cathode gold alloy, 0.5 µm, PoC-05 Optical and Electrical Characteristics
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EL1-950-11
PoC-05
D-12555
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Untitled
Abstract: No abstract text available
Text: Photodiode-Chip EPC-1300-0.22-3 04.07.2011 rev. 04 Wavelength range Type Technology Electrodes Infrared Planar InGaAs/InP Both on top side typ. dimensions in µm 460 ±20 150 220 typ. thickness Description 330 ±20 µm Broadband photodiode with maximum response in the
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EPC-1300-0
D-12555
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Untitled
Abstract: No abstract text available
Text: EPC-740-0.5 Photodiode-Chip 19.11.2007 rev. 05 Wavelength range Type Technology Electrodes Infrared, selective Integrated filter AlGaAs/GaAs P anode up typ. dimensions (µm) 460 360 300 typ. thickness 300 (±20) µm anode gold alloy, 1.5 µm cathode gold alloy, 0.5 µm
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EPC-740-0
PD-02
125oelektronik
D-12555
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Untitled
Abstract: No abstract text available
Text: Photodiode-Chip EPC-525-0.5-1 17.04.2009 rev. 05 Wavelength range Type Technology Electrodes Green, selective Integrated filter GaP P anode up typ. dimensions (µm) 430 Ø110 typ. thickness 270 (±20) µm 470 anode gold alloy, 1.5 µm cathode gold alloy, 0.5 µm
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EPC-525-0
D-12555
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Untitled
Abstract: No abstract text available
Text: LED - Chip ELC-800-25 01.07.2011 rev. 09 Radiation Type Technology Electrodes Infrared DDH AlGaAs/AlGaAs N cathode up typ. dimensions (µm) 325 Ø120 typ. thickness 150 (±25) µm cathode gold alloy, 1.5 µm anode gold alloy, 0.5 µm structured, 25% covered
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ELC-800-25
LED-03
EL2-800-25
D-12555
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Untitled
Abstract: No abstract text available
Text: LED - Chip EL1-690-27 01.07.2011 rev. 04 Radiation Type Technology Electrodes Red DDH AlGaAs/AlGaAs N cathode up typ. dimensions (µm) 360 120 typ. thickness 150 (±25) µm cathode gold alloy, 1.5 µm anode gold alloy, 0.5 µm structured, 25% covered LED-05
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EL1-690-27
LED-05
D-12555
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Untitled
Abstract: No abstract text available
Text: LED - Chip EL1-810-21 01.07.2011 rev. 11 Radiation Type Technology Electrodes Infrared DDH AlGaAs/AlGaAs N cathode up typ. dimensions (µm) 1000 1000 typ. thickness 150 (±25) µm cathode gold alloy, 1.5 µm anode gold alloy, 0.5 µm structured, 25% covered
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EL1-810-21
PoC-05
D-12555
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EPD-440-0/0.9
Abstract: uv photodiode, GaP EPD-440-0 440-nm
Text: Photodiode EPD-440-0-0.9 11.04.2007 Preliminary rev. 03/07 Wavelength Type Technology Case UV Schottky Contact GaP TO-46 + UV-glass Description +0,1 5,1 -0,1 Ø 5,31 +0,03 +0,025 +0,05 -0,05 Ø 4,75 -0,1 2,54 Ø 4,22 Ø 5,33 Ø 0,44 -0,03 0,2 -0,025 Cathode
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EPD-440-0-0
D-12555
EPD-440-0
EPD-440-0/0.9
uv photodiode, GaP
EPD-440-0
440-nm
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Equivalent IR 740
Abstract: ELC-68
Text: Photodiode EPD-740-9-0.4 6/28/2007 Preliminary rev. 01/07 Wavelength Type Technology Case Infrared SMD AlGaAs/AlGaAs TOPLED Description 2,8 ± 0,2 2,2 ± 0,1 Selective photodiode mounted in TOPLED PLCC-2 package, for easy circuit board mounting and assembling of arrays. Narrow response range 740
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EPD-740-9-0
ELC-68
D-12555
Equivalent IR 740
ELC-68
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v40150
Abstract: No abstract text available
Text: Photodiode EPD-150-0-2.5 6/21/2007 Preliminary rev. 05/07 Wavelength Type Technology Case VUV Schottky Contact GaP TO-39 + sapphire window Description 0, 1 ± 0,03 chip location Ø9,14 ± 0,1 Ø7,62 4,50 chip location 8,13 ± 0,05 9, 90 ± 0,45 5,08 Wide bandwidth and high sensitivity from VUV up
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EPD-150-0-2
D-12555
EPD-150-0
v40150
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EPC-880-1
Abstract: No abstract text available
Text: Photodiode-Chip EPC-880-1.4 Preliminary 11.04.2007 rev. 03/07 Wavelength range Type Technology Electrodes Infrared, selective Integrated filter AlGaAs/GaAs P anode up typ. dimensions (µm) 1360 1000 960 typ. thickness 300 µm anode gold alloy, 1.5 µm cathode
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EPC-880-1
PD-13
EP-880-1
D-12555
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Untitled
Abstract: No abstract text available
Text: Photodiode EPD-525-3-0.5 27.04.2007 Preliminary rev. 01/07 Wavelength Type Technology Case Blue-Green water clear GaP 3 mm plastic lens Description Selective photodiode mounted in standard 3 mm package with standoff. Narrow bandwidth and high spectral sensitivity in the range of max. eye
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EPD-525-3-0
D-12555
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TO-39, UVC
Abstract: uvc photodiode photodiode 011
Text: Photodiode EPD-270-0-0.3-2 11.04.2007 Preliminary rev. 02/07 Wavelength Type Technology Case UV-C clear UV-glass + filter SiC TO-39 Description 8,33 Selective photodiode with high spectral sensitivity in the UVC range 230 nm - 285 nm , mounted in hermetically sealed TO-39 package with clear
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EPD-270-0-0
D-12555
TO-39, UVC
uvc photodiode
photodiode 011
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tl8w/08
Abstract: TL8W
Text: UVA - Sensor Head Rev 03/08 This optical sensor head is designed to measure irradiance in the UVA wavelength range. It is equipped with an inbuilt amplifier which allows irradiance measurement over An several analogous decades. voltage will be output, which is
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D-12555
tl8w/08
TL8W
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EPD-440-0-2
Abstract: uv photodiode, GaP BURNER EPD-440-0
Text: Photodiode EPD-440-0-2.5 11.04.2007 Preliminary rev. 03/07 Wavelength Type Technology Case UV Schottky Contact GaP TO-39 + UV-glass Description ± 0,1 Chip Location Ø9,14 Ø7,62 ± 0,1 8,13 5,90 5,08 ± 0,1 9, 90 ± 0,45 0, 1 ± 0,03 3,25 Anode ± 0,05 05
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EPD-440-0-2
ELC-70
D-12555
EPD-440-0
uv photodiode, GaP
BURNER
EPD-440-0
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Untitled
Abstract: No abstract text available
Text: Photodiode EPD-740-5-0.5 19.11.2007 rev. 02 Wavelength Type Technology Case Infrared water clear AlGaAs/GaAs 5 mm plastic lens Description Selective photodiode mounted in standard 5 mm package without standoff. Narrow response range 740 nm peak by means of integrated filter
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EPD-740-5-0
D-12555
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Untitled
Abstract: No abstract text available
Text: Photodiode EPD-365-0-0.9 11.04.2007 Preliminary rev. 03/07 Wavelength Type Technology Case UV Schottky Contact GaP TO-46 + UG-11 filter Description +0,1 5,1 -0,1 Ø 5,31 +0,03 +0,025 +0,05 -0,05 Ø 4,75 -0,1 2,54 Ø 4,22 Ø 5,33 Ø 0,44 -0,03 0,2 -0,025 Cathode
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EPD-365-0-0
UG-11
D-12555
EPD-365-0
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