D1030 Search Results

Contextual Info: S T U/D1030P L S amHop Microelectronics C orp. P reliminary May.28 2004 P -C hannel E nhancement Mode MOS FE T F E AT UR E S P R ODUC T S UMMAR Y V DS S ID -30V -18A R DS ON ( m W ) Max S uper high dense cell design for low R DS (ON ). R ugged and reliable.

Contextual Info: TetraFET D1030UK ROHS COMPLIANT METAL GATE RF SILICON FET MECHANICAL DATA B C 2 pls 2 G (typ) 3 1 H P (2 pls) A D 4 5 GOLD METALLISED MULTI-PURPOSE SILICON DMOS RF FET 400W – 28V – 175MHz PUSH–PULL E (4 pls) F I FEATURES • SIMPLIFIED AMPLIFIER DESIGN

pulse 01940

Abstract: 01948 D1030N
Contextual Info: Datenblatt / Data sheet N Netz-Gleichrichterdiode Rectifier Diode D1030N Elektrische Eigenschaften / Electrical properties Höchstzulässige Werte / maximum rated values Kenndaten Periodische Spitzensperrspannung repetitive peak reverse voltages Elektrische Eigenschaften

D1030UK

Abstract: 7808 cv
Contextual Info: TetraFET D1030UK METAL GATE RF SILICON FET MECHANICAL DATA B C 2 pls 2 G (typ) 3 1 H P (2 pls) A D 4 5 GOLD METALLISED MULTI-PURPOSE SILICON DMOS RF FET 400W – 28V – 175MHz PUSH–PULL E (4 pls) F I FEATURES • SIMPLIFIED AMPLIFIER DESIGN N O M J K

UT-085

Abstract: D1030UK UT-034-25 064R ut 7808 D1030 7808 cv
Contextual Info: TetraFET D1030UK ROHS COMPLIANT METAL GATE RF SILICON FET MECHANICAL DATA B C 2 pls 2 G (typ) 3 1 H P (2 pls) A D 4 5 GOLD METALLISED MULTI-PURPOSE SILICON DMOS RF FET 400W – 28V – 175MHz PUSH–PULL E (4 pls) F I FEATURES • SIMPLIFIED AMPLIFIER DESIGN

RF Amplifier 500w

Abstract: amplifier 400W 5310 064R D1030UK
Contextual Info: TetraFET D1030UK METAL GATE RF SILICON FET MECHANICAL DATA B C 2 pls 2 G (typ) 3 1 H P (2 pls) A D 4 5 GOLD METALLISED MULTI-PURPOSE SILICON DMOS RF FET 400W – 28V – 175MHz PUSH–PULL E (4 pls) F I FEATURES • SIMPLIFIED AMPLIFIER DESIGN N O M J K

Contextual Info: S T U/D1030P L S amHop Microelectronics C orp. P reliminary May.28 2004 P -C hannel E nhancement Mode MOS FE T F E AT UR E S P R ODUC T S UMMAR Y V DS S ID -30V -18A R DS ON ( m W ) Max S uper high dense cell design for low R DS (ON ). R ugged and reliable.

Contextual Info: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid

M83519

Abstract: MIL-S-83519 Raychem installation procedure rcps-100-70 SAE-AS83519 raychem RPIP 655-00-D NAS1745 D-103-31 raychem rt-1404 RAYCHEM D-103-00 raychem solder sleeve d-142-51
Contextual Info: Shield Termination SolderSleeve Shield Terminators Product Facts • Transparent insulation sleeve provides encapsulation, inspectability, strain relief, and insulation ■ Prefluxed solder preform provides a controlled soldering process ■ One-piece design offers

Acopian Power Supply Model A24H1200

Abstract: Acopian DB12-30 Acopian Power Supplies transistor marking code wm9 24EB60 Acopian DB15-50 p022h 15j100 B24G210 A24H1500
Contextual Info: ALL ACOPIAN POWER SUPPLIES ARE MADE IN THE U.S.A. POWER SUPPLY SELECTION GUIDE 1 of 2 Shipped within 6 / 9 DAYS HIGH VOLTAGE REGULATED, AC-DC & DC-DC To 30 KV PAGE { 0-30 kV 1- 60 mA 30 - 60 watts MODULAR Single output . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .2-5

32 inch TV samsung lcd Schematic

Abstract: U574 BA41-00717A 27b1 diode BA41-00718A BA41-0071 AP4435 22B2 DIODE 58c3 SLB9635TT1.2
Contextual Info: 4 3 2 1 SAMSUNG PROPRIETARY THIS DOCUMENT CONTAINS CONFIDENTIAL PROPRIETARY INFORMATION THAT IS SAMSUNG ELECTRONICS CO’S PROPERTY. DO NOT DISCLOSE TO OR DUPLICATE FOR OTHERS EXCEPT AS AUTHORIZED BY SAMSUNG. D SYDNEY C B DRAW : : : : : : SYDNEY MAIN BA41-0071#A

Liquid Level

Contextual Info: Optical Liquid Level Sensors D103 Series * M12 Screw-in Body * Low cost * Compact size * Wide range of commercial and industrial applications. Features: Standard Temperature High Temperature D103 M12 Threaded Probe Housing Digital - High in Air Output Function

FS300R12OE4P

Abstract: FS450R12OE4P FP06R12W1T4 F3L400R12PT4 bt 1690 scr fp150r07n3e4 F3L300R12PT4 Eupec thyristors catalog FF150R12RT4 Dz800S17ke3
Contextual Info: Short Form Catalog 2012 High Power Semiconductors for Industrial Applications www.infineon.com/highpower Auch mit dem KuKa Kurzkatalog 2012 bieten wir Ihnen wieder einen Überblick über dieses Spektrum mit vielen Details. Durch ständigen Dialog mit unseren Kunden haben wir auch in

VRN 400

Contextual Info: ADC12V170 www.ti.com SNOSAZ1E – MAY 2007 – REVISED APRIL 2009 ADC12V170 12-Bit, 170 MSPS, 1.1 GHz Bandwidth A/D Converter with LVDS Outputs Check for Samples: ADC12V170 FEATURES DESCRIPTION • • • • • • • • The ADC12V170 is a high-performance CMOS

2SK2515

Abstract: MP-88
Contextual Info: DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK2515 SWITCHING N-CHANNEL POWER MOS FET DESCRIPTION The 2SK2515 is N-Channel MOS Field Effect Transistors designed for high current switching applications. FEATURES • Super Low on-state resistance RDS on 1 = 9.0 mΩ MAX. (VGS = 10 V, ID = 25 A)

raychem catalog termination kit and splicing kit

Abstract: Raychem installation procedure rcps-200-20 raychem AD-1377 M7928/1 MS25036 raychem AD-1377 calibration NAS1745 raychem AD-1377 drawings raychem termination kit and splicing kit RBK-ILS-processor
Contextual Info: Terminals and Splices Table of Contents How to Compute Circular Mil Area of Various Wire Shapes . . . . . . . . . . . . . . . . . . . . . . 9003 Terminal Stud Hole Size . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9004

Contextual Info: DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK2515 SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE DESCRIPTION The 2SK2515 is N-Channel MOS Field Effect T ra n s is to r designed PACKAGE DIMENSIONS in millimeter fo r hig h c u rre n t s w itc h in g applications,

D103-002

Abstract: D-103-00
Contextual Info: High Frequency Power Dividers 30 GHz RLC Electronics’ D-10300 Series of high frequency power dividers are compact microstrip units covering the frequency range of 10 to 30.0 GHz. These units are the same as D-10265 series, except modified to work up higher in

2SK2515

Abstract: MP-88
Contextual Info: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid

Contextual Info: 18 GHz Microwave PLL Synthesizer ADF41020 Data Sheet FEATURES GENERAL DESCRIPTION 18 GHz maximum RF input frequency Integrated SiGe prescaler Software compatible with the ADF4106/ADF4107/ADF4108 family of PLLs 2.85 V to 3.15 V PLL power supply Programmable dual-modulus prescaler

400w audio amplifier

Abstract: dvb-t transmitters THV500 400w transistor audio amplifier audio amplifier with output of 400w ING01 amplifier 400W analog voltmeter RF Amplifier 500w Audio Power Amplifier 400W circuit
Contextual Info: THV500 500W pep –27dBc min Tetrafet Technology Amplifier Designed for analog and digital TV transposers and transmitters, this amplifier incorporates microstrip technology and push-pull TETRAFET to enhance ruggedness and reliability. • • • • •

D1030

Abstract: D1030N TD1030
Contextual Info: European PowerSemiconductor and Electronics Company GmbH + Co. KG Leistungsgleichrichterdioden Power Rectifier Diodes D 1030 N C ø3,5 x 3,5 deep ø34 max. 12 A ø34 Pump out pipe metallic connected to the cathode 56 VW K July 1996 D 1030 N Elektrische Eigenschaften

WPLSoft user manual

Abstract: VFD015E43T VFD007E21T VFD007E43T submersible motor winding formula VFD004E21T VFD015E43A manual VFD007E21A delta vfd-e with modbus communication vfd037e43a
Contextual Info: Preface Thank you for choosing DELTA’s high-performance VFD-E Series. The VFD-E Series is manufactured with high-quality components and materials and incorporate the latest microprocessor technology available. This manual is to be used for the installation, parameter setting, troubleshooting, and daily

16 bit counter with latch

Contextual Info: 18 GHz Microwave PLL Synthesizer ADF41020 Data Sheet FEATURES GENERAL DESCRIPTION 18 GHz maximum RF input frequency Integrated SiGe prescaler Software compatible with the ADF4106/ADF4107/ADF4108 family of PLLs 2.85 V to 3.15 V PLL power supply Programmable dual-modulus prescaler