D100S Search Results

KB-D100SRW

Contextual Info: 8.89mmx3.81mm LED LIGHT BAR Part Number: KB-D100SRW Super Bright Red Features Description z Uniform light emitting area. The Super Bright Red source color devices are made with z Low current operation Gallium Aluminum Arsenide Red Light Emitting Diode. z Easily mounted on P.C.boards.

Contextual Info: 8.89mmx3.81mm LED LIGHT BAR Part Number: KB-D100SURKW Hyper Red Features Description z Uniform light emitting area. The Hyper Red source color devices are made with Al- z Low current operation GaInP on GaAs substrate Light Emitting Diode. z Easily mounted on P.C.boards.

6KB6

Abstract: 6KB2 6KB1 h100srw b100srw
Contextual Info: LED LIGHT BARS Kingbright KB-A100SRW,-B100SRW,-C100SRW,-D100SRW,-E100SRW, -F100SRW,-G100SRW,-H100SRW - , -2835SGD-2870SGD,-2885SGD,-2400YW,-2450YW,-2755YW,

KB-2600EW

Abstract: KB-2700YW KB-2800SGD KB-D100SRW KDA0468 kb2700
Contextual Info: 8.89mmx3.81mm LED LIGHT BARS Features ! UNIFORM ! LOW HIGH EFFICIENCY RED KB-D100SRW SUPER BRIGHT RED KB-2700YW YELLOW KB-2800SGD SUPER BRIGHT GREEN Description LIGHT EMITTING AREA. CURRENT OPERATION. ! EASILY KB-2600EW The High Efficiency source color devices are made with

Contextual Info: 8.89mmx3.81mm LED LIGHT BAR Part Number: KB-D100SURKW Hyper Red Features Description z Uniform light emitting area. The Hyper Red source color devices are made with Al- z Low current operation GaInP on GaAs substrate Light Emitting Diode. z Easily mounted on P.C.boards.

Contextual Info: 8.89mmx3.81mm LED LIGHT BAR KB-D100SRW Features SUPER BRIGHT RED Description UNIFORM LIGHT EMITTING AREA. LOW CURRENT OPERATION The Super Bright Red source color devices are made with Gallium Aluminum Arsenide Red Light Emitting EASILY MOUNTED ON P.C.BOARDS.

Contextual Info: 8.89mmx3.81mm LED LIGHT BAR KB-D100SRW Features SUPER BRIGHT RED Description UNIFORM LIGHT EMITTING AREA. LOW CURRENT OPERATION The Super Bright Red source color devices are made with Gallium Aluminum Arsenide Red Light Emitting EASILY MOUNTED ON P.C.BOARDS.

Contextual Info: 8.89mmx3.81mm LED LIGHT BAR KB-D100SRW Features SUPER BRIGHT RED Description UNIFORM LIGHT EMITTING AREA. LOW CURRENT OPERATION The Super Bright Red source color devices are made with Gallium Aluminum Arsenide Red Light Emitting EASILY MOUNTED ON P.C.BOARDS.

Contextual Info: 8.89mmx3.81mm LED LIGHT BAR KB-D100SRW Features ! UNIFORM ! LOW Description LIGHT EMITTING AREA. CURRENT OPERATION. ! EASILY SUPER BRIGHT RED MOUNTED ON P.C. BOARDS. The Super Bright Red source color devices are made with Gallium Aluminum Arsenide Red Light Emitting

KB-D100SRW

Contextual Info: 8.89mmx3.81mm LED LIGHT BAR Part Number: KB-D100SRW Super Bright Red Features Description z UNIFORM LIGHT EMITTING AREA. The Super Bright Red source color devices are made with z LOW CURRENT OPERATION Gallium Aluminum Arsenide Red Light Emitting Diode. z EASILY MOUNTED ON P.C.BOARDS.

Contextual Info: 8.89mmx3.81mm LED LIGHT BAR Part Number: KB-D100SURKW Hyper Red Features Description z Uniform light emitting area. The Hyper Red source color devices are made with Al- z Low current operation GaInP on GaAs substrate Light Emitting Diode. z Easily mounted on P.C.boards.

6112

Abstract: KB2600EW KB2700YW KB2800SGD KB-D100SRW
Contextual Info: 8.89mmx3.81mm LED LIGHT BARS Features ! UNIFORM ! LOW HIGH EFFICIENCY RED KB-D100SRW SUPER BRIGHT RED KB2700YW YELLOW KB2800SGD SUPER BRIGHT GREEN Description LIGHT EMITTING AREA. CURRENT OPERATION. ! EASILY KB2600EW The High Efficiency source color devices are made with

Contextual Info: 8.89mmx3.81mm LED LIGHT BAR Part Number: KB-D100SURKW Hyper Red Description Features Uniform light emitting area. The Hyper Red source color devices are made with Al- Low current operation GaInP on GaAs substrate Light Emitting Diode. Easily mounted on P.C.boards.

Contextual Info: 8.89mmx3.81mm LED LIGHT BAR Part Number:KB-D100SRW Features zUNIFORM zLOW Description LIGHT EMITTING AREA. CURRENT OPERATION MOUNTED ON P.C.BOARDS. zFLUSH MOUNTABLE. zEXCELLENT The Super Bright Red source color devices are made with Gallium Aluminum Arsenide Red Light Emitting

SN74LVC543

Abstract: CI 7107
Contextual Info: SN74LVC543 OCTAL REGISTERED TRANSCEIVER WITH 3-STATE OUTPUTS SCAS299 - JANUARY 1993 - REVISED MARCH 1994 DB, DW, OR PW PACKAGE crop v ie w EP/C Enhanced-Performance Implanted CMOS) Submicron Process Typical V q l p (Output Ground Bounce) < 0.8 V at VCc = 3.3 V, TA = 25°C

RECTIFIER BRIDGE 25A 600V

Abstract: CBR1F-D020S FAST RECOVERY DIODE 10A 400V diode 1000V 10a fast recovery diode 1000v 10A 10 AMP 1000V RECTIFIER DIODE
Contextual Info: CBR1F-D020S SERIES w w w. c e n t r a l s e m i . c o m SURFACE MOUNT 1 AMP FAST RECOVERY SILICON BRIDGE RECTIFIER DESCRIPTION: The CENTRAL SEMICONDUCTOR CBR1F-D020S Series types are fast recovery, full wave bridge rectifiers mounted in a durable epoxy surface mount

Contextual Info: g MOTOROLA MC33206 MC33207 A dvance Information Rail-To-Rail Operational Amplifiers with Enable Feature LOW VOLTAGE RAIL-TO-RAIL OPERATIONAL AMPLIFIERS SEMICONDUCTOR TECHNICAL DATA The MC33206/7 fam ily of operational am plifiers provide rail—to—rail

CBR1-D020S

Abstract: CBR1D060S D040S d020s
Contextual Info: Central CBR1-D020S SERIES TM Semiconductor Corp. SURFACE MOUNT 1 AMP DUAL IN LINE BRIDGE RECTIFIER DESCRIPTION: The CENTRAL SEMICONDUCTOR CBR1-D020S series types are silicon full wave bridge rectifiers mounted in a durable epoxy surface mount molded case, utilizing glass passivated chips.

SN74LVC541

Contextual Info: SN74LVC541 OCTAL BUFFER/DRIVER WITH 3-STATE OUTPUTS SCAS298 - JANUAR Y 1993 - REVISED M A RCH 1994 EPIC Enhanced-Performance Implanted CMOS Submicron Process Typical V q l p (Output Ground Bounce) < 0.8 V at Vc c = 3.3 V, TA = 25°C DB, DW, OR PW PACKAGE

D86S

Abstract: 68b1 6.2B2 56B2 5.6B2 D158S 54B2 62b1 D33SH 62B2
Contextual Info: A B C D REVISIONS ENGINEERING NOTES 1. Device is dead bug laid out 2. Pin 1 is pointing south 3. A 0.01uf chip capacitor in parallel 4. Use an odd channel, also reserve an 5. Use an odd and even chan. Tie them 6. DUT Analog star GND pin 51, 54 7. Supertex Inc.

SN74LVC540

Contextual Info: SN74LVC540 OCTAL BUFFER/DRIVER WITH 3-STATE OUTPUTS S CAS297 - JANUARY 1993 - REVISED MARCH 1994 EPIC Enhanced-Performance Implanted CMOS Submicron Process Typical Vo lp (Output Ground Bounce) < 0.8 V at VCc = 3.3 V, TA = 25°C Typical Vqhv (Output V q h Undershoot)

SAC305

Abstract: of component with BGA Staggered Pins IT3D-100S-BGA hirose it3 eutectic 200p35 SAC30S D-100S-B6A 200p35h JT3-200P-20H
Contextual Info: IT3 C o n n e cto r S y s te m G e n e r a l In fo rm a tio n Document Number; ETAD-F0458 Revision 1.5 Section 2 General Hirose's IT3 connector system is designed to provide modular high-speed differential, single-ended and power connections between two parallel boards.

78f0034

Abstract: btb 139 d78014 d78f0034 PD780023 pd78f0034 spy robot using avr PD780021 d780021 wpd780024
Contextual Info: USER'S MANUAL ¿¿PD780024, 780034, 780024Y, 780034Y SUBSERÌES 8-BIT SINGLE-CHIP MICROCONTROLLER PRELIMINARY /¿PD780021 //PD780022 /iPD780023 /¿PD780024 /¿PD780021 (A) /¿PD780022(A) /iPD780023(A) /iPD780024(A) ¿¿PD780031 ¿¿PD780032 /¿PD780033 /¿PD780034

IC SEM 2105

Abstract: free sem 2105 sem 2105 diode e4f sem 2105 16 pin G10G2 MHPM7A5S120DC3 MHPM7A8A120A diode 8255 VQE 12
Contextual Info: MOTOROLA Order this documenti by MHPM7A8A120A/D SEMICONDUCTOR TECHNICAL DATA Hybrid Power Module M HPM 7A8A120A Integrated Power Stage for 1.0 hp Motor Drives This device is not recommended for new designs (This device is replaced by MHPM7A5S120DC3) This module integrates a 3-phase input rectifier bridge, 3-phase