D1 DIODE Search Results

30N120D1

Abstract: 30n120d 30N120 T30N120 ixdh 30n120d1
Contextual Info: IXDH 30N120 IXDH 30N120 D1 IXDT 30N120 IXDT 30N120 D1 High Voltage IGBT with optional Diode Short Circuit SOA Capability Square RBSOA C C G G E Preliminary Data VCES = 1200 V = 60 A IC25 VCE sat typ = 2.4 V E IXDH 30N120 IXDT 30N120 IXDH 30N120 D1 IXDT 30N120 D1

Si9940DY

Contextual Info: Si9940DY Siliconix Dual NĆChannel EnhancementĆMode MOSFET Product Summary VDS V 50 rDS(on) (W) ID (A) 0.05 @ VGS = 10 V "5.3 0.07 @ VGS = 4.5 V "4.5 SOĆ16* D1 D1 D1 S1 1 16 D1 S1 2 15 D1 G1 3 14 D1 D2 D2 D2 G1 S2 6 11 D2 S2 7 10 D2 G2 8 9 D2 Top View

30n120

Abstract: 30N120D1 TRANSISTOR D1879 IXDH30N120 IXDH30N120D1 6T600
Contextual Info: IXDH 30N120 IXDH 30N120 D1 IXDT 30N120 IXDT 30N120 D1 High Voltage IGBT with optional Diode Short Circuit SOA Capability Square RBSOA C VCES = 1200 V = 60 A IC25 VCE sat typ = 2.4 V C G TO-247 AD (IXDH) G E E IXDH 30N120 IXDT 30N120 G C IXDH 30N120 D1 IXDT 30N120 D1

30N120

Abstract: 30n120d
Contextual Info: □IXYS IXDH 30N120 IXDH 30N120 D1 IXDT 30N120 IXDT30N120 D1 High Voltage IGBT with optional Diode Short Circuit SOA Capability Square RBSOA IXDH 30N120 IXDT 30N120 IXDH 30N120 D1 IXDT 30N120 D1 Symbol Conditions VcES Tj = 25°C to 150°C 1200 V VcGR Tj = 25°C to 150°C; RGE= 20 k£l

PSDI 50

Abstract: Three Phase Rectifier Bridge with IGBT and Fast Recovery Diode
Contextual Info: ECO-PAC TM 2 Three Phase Rectifier Bridge PSDI 50/12 VRRM IdAVM with IGBT and Fast Recovery Diode for Braking System in ECO-PACTM 2 = 1200 V = 56 A Preliminary Data Sheet V16 K1 ~ D1 ~ G1 ~ D1 D3 D5 A4 N7 D1 T L9 D2 D4 D6 X18 R9 Input Rectifier D1 – D6 Symbol

Si9940DY

Abstract: S/BIP/SCB345100/B/30/10/SI9940DY
Contextual Info: Si9940DY Dual N-Channel Enhancement-Mode MOSFET Product Summary VDS V 50 rDS(on) (W) ID (A) 0.05 @ VGS = 10 V "5.3 0.07 @ VGS = 4.5 V "4.5 SO-16* D1 D1 D1 S1 1 16 D1 S1 2 15 D1 G1 3 14 D1 D2 D2 D2 G1 S2 6 11 D2 S2 7 10 D2 G2 8 9 D2 Top View G2 S1 S1 N-Channel MOSFET

si9940dy

Contextual Info: Si9940DY Dual N-Channel Enhancement-Mode MOSFET Product Summary VDS V 50 rDS(on) (W) ID (A) 0.05 @ VGS = 10 V "5.3 0.07 @ VGS = 4.5 V "4.5 SO-16* D1 D1 D1 S1 1 16 D1 S1 2 15 D1 G1 3 14 D1 D2 D2 D2 G1 S2 6 11 D2 S2 7 10 D2 G2 8 9 D2 Top View G2 S1 S1 N-Channel MOSFET

Si9940DY

Abstract: S/BIP/SCB345100/B/30/10/SI9940DY
Contextual Info: Si9940DY Dual N-Channel Enhancement-Mode MOSFET Product Summary VDS V 50 rDS(on) (W) ID (A) 0.05 @ VGS = 10 V "5.3 0.07 @ VGS = 4.5 V "4.5 SO-16* D1 D1 D1 S1 1 16 D1 S1 2 15 D1 G1 3 14 D1 D2 D2 D2 G1 S2 6 11 D2 S2 7 10 D2 G2 8 9 D2 Top View G2 S1 S1 N-Channel MOSFET

AP4578GM

Contextual Info: AP4578GM Pb Free Plating Product Advanced Power Electronics Corp. N AND P-CHANNEL ENHANCEMENT MODE POWER MOSFET ▼ Simple Drive Requirement D2 D1 D2 D1 D1 D1 ▼ Lower Gate Charge ▼ Fast Switching Performance N-CH BVDSS D2 D2 ▼ RoHS Compliant SO-8 SO-8

Contextual Info: AP4578GM-HF Halogen-Free Product Advanced Power Electronics Corp. N AND P-CHANNEL ENHANCEMENT MODE POWER MOSFET Simple Drive Requirement D2 D1 D2 D1 D1 D1 Lower Gate Charge Fast Switching Performance N-CH BVDSS D2 D2 RoHS Compliant SO-8 SO-8 60V RDS ON 64m

AP4515GM

Abstract: AP4515
Contextual Info: AP4515GM Pb Free Plating Product Advanced Power Electronics Corp. N AND P-CHANNEL ENHANCEMENT MODE POWER MOSFET ▼ Simple Drive Requirement D2 D1 D2 D1 D1 D1 ▼ Lower Gate Charge ▼ Fast Switching Performance N-CH BVDSS D2 D2 ▼ RoHS Compliant SO-8 SO-8

Contextual Info: AP4575GM-HF Halogen-Free Product Advanced Power Electronics Corp. N AND P-CHANNEL ENHANCEMENT MODE POWER MOSFET Simple Drive Requirement D2 D1 D2 D1 D1 D1 Low On-resistance Fast Switching Performance RoHS Compliant N-CH BVDSS D2 D2 SO-8 SO-8 60V RDS ON 36m

Contextual Info: AP4515GM Pb Free Plating Product Advanced Power Electronics Corp. N AND P-CHANNEL ENHANCEMENT MODE POWER MOSFET Simple Drive Requirement D2 D1 D2 D1 D1 D1 Lower Gate Charge Fast Switching Performance N-CH BVDSS D2 D2 RoHS Compliant SO-8 SO-8 35V RDS ON 22m

Contextual Info: AP4578GM-HF Halogen-Free Product Advanced Power Electronics Corp. N AND P-CHANNEL ENHANCEMENT MODE POWER MOSFET ▼ Simple Drive Requirement D2 D1 D2 D1 D1 D1 ▼ Lower Gate Charge ▼ Fast Switching Performance N-CH BVDSS D2 D2 ▼ RoHS Compliant SO-8 SO-8

AP4509GM

Abstract: AP4509
Contextual Info: AP4509GM RoHS-compliant Product Advanced Power Electronics Corp. N AND P-CHANNEL ENHANCEMENT MODE POWER MOSFET ▼ Simple Drive Requirement D2 D1 D2 D1 D1 D1 ▼ Low On-resistance ▼ Fast Switching Performance N-CH BVDSS D2 D2 SO-8 SO-8 30V RDS ON 14mΩ

AP4565GM

Contextual Info: AP4565GM Pb Free Plating Product Advanced Power Electronics Corp. N AND P-CHANNEL ENHANCEMENT MODE POWER MOSFET ▼ Simple Drive Requirement D2 D1 D2 D1 D1 D1 ▼ Low On-resistance ▼ Fast Switching Performance N-CH BVDSS D2 D2 SO-8 SO-8 40V RDS ON 25mΩ

4513GM

Abstract: MOSFET p-CH 43a AP4513GM P-channel AND N-Channel power mosfet SO-8 ENHANCEMENT 4513G
Contextual Info: AP4513GM RoHS-compliant Product Advanced Power Electronics Corp. N AND P-CHANNEL ENHANCEMENT MODE POWER MOSFET ▼ Simple Drive Requirement D2 D1 D2 D1 D1 D1 ▼ Low On-resistance ▼ Fast Switching Performance N-CH BVDSS D2 D2 35V RDS ON 36mΩ ID SO-8 SO-8

4509gm

Abstract: AP4509 AP4509GM IDA13 A/4509gm
Contextual Info: AP4509GM RoHS-compliant Product Advanced Power Electronics Corp. N AND P-CHANNEL ENHANCEMENT MODE POWER MOSFET ▼ Simple Drive Requirement D2 D1 D2 D1 D1 D1 ▼ Low On-resistance ▼ Fast Switching Performance N-CH BVDSS D2 D2 SO-8 SO-8 30V RDS ON 14mΩ

Contextual Info: AP4575GM RoHS-compliant Product Advanced Power Electronics Corp. N AND P-CHANNEL ENHANCEMENT MODE POWER MOSFET ▼ Simple Drive Requirement D2 D1 D2 D1 D1 D1 ▼ Low On-resistance ▼ Fast Switching Performance N-CH BVDSS D2 D2 SO-8 SO-8 G2 S2 G2 G1 S2 S1G1

AP4513GM

Contextual Info: AP4513GM Pb Free Plating Product Advanced Power Electronics Corp. N AND P-CHANNEL ENHANCEMENT MODE POWER MOSFET ▼ Simple Drive Requirement D2 D1 D2 D1 D1 D1 ▼ Low On-resistance ▼ Fast Switching Performance N-CH BVDSS D2 D2 35V RDS ON 36mΩ ID G2 G2

AP4511GM

Abstract: AP4511
Contextual Info: AP4511GM Pb Free Plating Product Advanced Power Electronics Corp. N AND P-CHANNEL ENHANCEMENT MODE POWER MOSFET ▼ Simple Drive Requirement D2 D1 D2 D1 D1 D1 ▼ Low On-resistance ▼ Fast Switching Performance N-CH BVDSS D2 D2 SO-8 SO-8 35V RDS ON 25mΩ

APM8001

Abstract: APM8001K apm80 A102 A108 B102 JESD-22 m8580
Contextual Info: APM8001K Dual N-Channel Enhancement Mode MOSFET Pin Description Features • D1 D1 80V/4.1A, D2 D2 RDS ON =55mΩ(Typ.) @ VGS = 10V • • Reliable and Rugged S1 G1 S2 Lead Free and Green Devices Available G2 (RoHS Compliant) SOP-8 D1 D1 D2 D2 Applications

AP4503GM

Abstract: DSA00212337 24v 6A mosfet ap4503
Contextual Info: AP4503GM Pb Free Plating Product Advanced Power Electronics Corp. N AND P-CHANNEL ENHANCEMENT MODE POWER MOSFET ▼ Simple Drive Requirement D2 D1 D2 D1 D1 D1 ▼ Low On-resistance ▼ Fast Switching Performance N-CH BVDSS D2 D2 SO-8 SO-8 30V RDS ON 28mΩ

Contextual Info: SSD2007A Dual N-CHANNEL POWER MOSFET FEATURES 8 SOP S1 1 8 D1 G1 2 7 D1 ! Extremely Lower RDS ON S2 3 6 D2 ! Improved Inductive Ruggedness ! Fast Switching Times G2 4 5 D2 Top View ! Rugged Polysilicon Gate Cell Structure ! Low Input Capacitance D1,D2 D1,D2