30N120D1
Abstract: 30n120d 30N120 T30N120 ixdh 30n120d1
Text: IXDH 30N120 IXDH 30N120 D1 IXDT 30N120 IXDT 30N120 D1 High Voltage IGBT with optional Diode Short Circuit SOA Capability Square RBSOA C C G G E Preliminary Data VCES = 1200 V = 60 A IC25 VCE sat typ = 2.4 V E IXDH 30N120 IXDT 30N120 IXDH 30N120 D1 IXDT 30N120 D1
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30N120
30N120
IXDH30N120
D-68623
30N120D1
30n120d
T30N120
ixdh 30n120d1
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Si9940DY
Abstract: No abstract text available
Text: Si9940DY Siliconix Dual NĆChannel EnhancementĆMode MOSFET Product Summary VDS V 50 rDS(on) (W) ID (A) 0.05 @ VGS = 10 V "5.3 0.07 @ VGS = 4.5 V "4.5 SOĆ16* D1 D1 D1 S1 1 16 D1 S1 2 15 D1 G1 3 14 D1 D2 D2 D2 G1 S2 6 11 D2 S2 7 10 D2 G2 8 9 D2 Top View
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Si9940DY
P-38889--Rev.
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30n120
Abstract: 30N120D1 TRANSISTOR D1879 IXDH30N120 IXDH30N120D1 6T600
Text: IXDH 30N120 IXDH 30N120 D1 IXDT 30N120 IXDT 30N120 D1 High Voltage IGBT with optional Diode Short Circuit SOA Capability Square RBSOA C VCES = 1200 V = 60 A IC25 VCE sat typ = 2.4 V C G TO-247 AD (IXDH) G E E IXDH 30N120 IXDT 30N120 G C IXDH 30N120 D1 IXDT 30N120 D1
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30N120
30N120
O-247
O--268
30N120D1
TRANSISTOR D1879
IXDH30N120
IXDH30N120D1
6T600
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30N120
Abstract: 30n120d
Text: □IXYS IXDH 30N120 IXDH 30N120 D1 IXDT 30N120 IXDT30N120 D1 High Voltage IGBT with optional Diode Short Circuit SOA Capability Square RBSOA IXDH 30N120 IXDT 30N120 IXDH 30N120 D1 IXDT 30N120 D1 Symbol Conditions VcES Tj = 25°C to 150°C 1200 V VcGR Tj = 25°C to 150°C; RGE= 20 k£l
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OCR Scan
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30N120
30N120
IXDT30N120
O-247
D-68623
30n120d
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PSDI 50
Abstract: Three Phase Rectifier Bridge with IGBT and Fast Recovery Diode
Text: ECO-PAC TM 2 Three Phase Rectifier Bridge PSDI 50/12 VRRM IdAVM with IGBT and Fast Recovery Diode for Braking System in ECO-PACTM 2 = 1200 V = 56 A Preliminary Data Sheet V16 K1 ~ D1 ~ G1 ~ D1 D3 D5 A4 N7 D1 T L9 D2 D4 D6 X18 R9 Input Rectifier D1 – D6 Symbol
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Si9940DY
Abstract: S/BIP/SCB345100/B/30/10/SI9940DY
Text: Si9940DY Dual N-Channel Enhancement-Mode MOSFET Product Summary VDS V 50 rDS(on) (W) ID (A) 0.05 @ VGS = 10 V "5.3 0.07 @ VGS = 4.5 V "4.5 SO-16* D1 D1 D1 S1 1 16 D1 S1 2 15 D1 G1 3 14 D1 D2 D2 D2 G1 S2 6 11 D2 S2 7 10 D2 G2 8 9 D2 Top View G2 S1 S1 N-Channel MOSFET
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Si9940DY
SO-16*
SO-16
S-47958--Rev.
15-Apr-96
S/BIP/SCB345100/B/30/10/SI9940DY
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si9940dy
Abstract: No abstract text available
Text: Si9940DY Dual N-Channel Enhancement-Mode MOSFET Product Summary VDS V 50 rDS(on) (W) ID (A) 0.05 @ VGS = 10 V "5.3 0.07 @ VGS = 4.5 V "4.5 SO-16* D1 D1 D1 S1 1 16 D1 S1 2 15 D1 G1 3 14 D1 D2 D2 D2 G1 S2 6 11 D2 S2 7 10 D2 G2 8 9 D2 Top View G2 S1 S1 N-Channel MOSFET
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Si9940DY
SO-16*
SO-16
S-47958--Rev.
15-Apr-96
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Si9940DY
Abstract: S/BIP/SCB345100/B/30/10/SI9940DY
Text: Si9940DY Dual N-Channel Enhancement-Mode MOSFET Product Summary VDS V 50 rDS(on) (W) ID (A) 0.05 @ VGS = 10 V "5.3 0.07 @ VGS = 4.5 V "4.5 SO-16* D1 D1 D1 S1 1 16 D1 S1 2 15 D1 G1 3 14 D1 D2 D2 D2 G1 S2 6 11 D2 S2 7 10 D2 G2 8 9 D2 Top View G2 S1 S1 N-Channel MOSFET
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Si9940DY
SO-16*
SO-16
S-47958--Rev.
15-Apr-96
S/BIP/SCB345100/B/30/10/SI9940DY
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AP4578GM
Abstract: No abstract text available
Text: AP4578GM Pb Free Plating Product Advanced Power Electronics Corp. N AND P-CHANNEL ENHANCEMENT MODE POWER MOSFET ▼ Simple Drive Requirement D2 D1 D2 D1 D1 D1 ▼ Lower Gate Charge ▼ Fast Switching Performance N-CH BVDSS D2 D2 ▼ RoHS Compliant SO-8 SO-8
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AP4578GM
135/W
AP4578GM
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PDF
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Untitled
Abstract: No abstract text available
Text: AP4578GM-HF Halogen-Free Product Advanced Power Electronics Corp. N AND P-CHANNEL ENHANCEMENT MODE POWER MOSFET Simple Drive Requirement D2 D1 D2 D1 D1 D1 Lower Gate Charge Fast Switching Performance N-CH BVDSS D2 D2 RoHS Compliant SO-8 SO-8 60V RDS ON 64m
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AP4578GM-HF
4578GM
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AP4515GM
Abstract: AP4515
Text: AP4515GM Pb Free Plating Product Advanced Power Electronics Corp. N AND P-CHANNEL ENHANCEMENT MODE POWER MOSFET ▼ Simple Drive Requirement D2 D1 D2 D1 D1 D1 ▼ Lower Gate Charge ▼ Fast Switching Performance N-CH BVDSS D2 D2 ▼ RoHS Compliant SO-8 SO-8
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AP4515GM
135/W
AP4515GM
AP4515
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PDF
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Untitled
Abstract: No abstract text available
Text: AP4575GM-HF Halogen-Free Product Advanced Power Electronics Corp. N AND P-CHANNEL ENHANCEMENT MODE POWER MOSFET Simple Drive Requirement D2 D1 D2 D1 D1 D1 Low On-resistance Fast Switching Performance RoHS Compliant N-CH BVDSS D2 D2 SO-8 SO-8 60V RDS ON 36m
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AP4575GM-HF
4575GM
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Untitled
Abstract: No abstract text available
Text: AP4515GM Pb Free Plating Product Advanced Power Electronics Corp. N AND P-CHANNEL ENHANCEMENT MODE POWER MOSFET Simple Drive Requirement D2 D1 D2 D1 D1 D1 Lower Gate Charge Fast Switching Performance N-CH BVDSS D2 D2 RoHS Compliant SO-8 SO-8 35V RDS ON 22m
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AP4515GM
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Untitled
Abstract: No abstract text available
Text: AP4578GM-HF Halogen-Free Product Advanced Power Electronics Corp. N AND P-CHANNEL ENHANCEMENT MODE POWER MOSFET ▼ Simple Drive Requirement D2 D1 D2 D1 D1 D1 ▼ Lower Gate Charge ▼ Fast Switching Performance N-CH BVDSS D2 D2 ▼ RoHS Compliant SO-8 SO-8
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AP4578GM-HF
volta80
4578GM
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AP4509GM
Abstract: AP4509
Text: AP4509GM RoHS-compliant Product Advanced Power Electronics Corp. N AND P-CHANNEL ENHANCEMENT MODE POWER MOSFET ▼ Simple Drive Requirement D2 D1 D2 D1 D1 D1 ▼ Low On-resistance ▼ Fast Switching Performance N-CH BVDSS D2 D2 SO-8 SO-8 30V RDS ON 14mΩ
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AP4509GM
100us
100ms
AP4509GM
AP4509
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AP4565GM
Abstract: No abstract text available
Text: AP4565GM Pb Free Plating Product Advanced Power Electronics Corp. N AND P-CHANNEL ENHANCEMENT MODE POWER MOSFET ▼ Simple Drive Requirement D2 D1 D2 D1 D1 D1 ▼ Low On-resistance ▼ Fast Switching Performance N-CH BVDSS D2 D2 SO-8 SO-8 40V RDS ON 25mΩ
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AP4565GM
100us
100ms
135oC/W
AP4565GM
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4513GM
Abstract: MOSFET p-CH 43a AP4513GM P-channel AND N-Channel power mosfet SO-8 ENHANCEMENT 4513G
Text: AP4513GM RoHS-compliant Product Advanced Power Electronics Corp. N AND P-CHANNEL ENHANCEMENT MODE POWER MOSFET ▼ Simple Drive Requirement D2 D1 D2 D1 D1 D1 ▼ Low On-resistance ▼ Fast Switching Performance N-CH BVDSS D2 D2 35V RDS ON 36mΩ ID SO-8 SO-8
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AP4513GM
4513GM
4513GM
MOSFET p-CH 43a
AP4513GM
P-channel AND N-Channel power mosfet SO-8 ENHANCEMENT
4513G
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4509gm
Abstract: AP4509 AP4509GM IDA13 A/4509gm
Text: AP4509GM RoHS-compliant Product Advanced Power Electronics Corp. N AND P-CHANNEL ENHANCEMENT MODE POWER MOSFET ▼ Simple Drive Requirement D2 D1 D2 D1 D1 D1 ▼ Low On-resistance ▼ Fast Switching Performance N-CH BVDSS D2 D2 SO-8 SO-8 30V RDS ON 14mΩ
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AP4509GM
4509GM
4509gm
AP4509
AP4509GM
IDA13
A/4509gm
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Untitled
Abstract: No abstract text available
Text: AP4575GM RoHS-compliant Product Advanced Power Electronics Corp. N AND P-CHANNEL ENHANCEMENT MODE POWER MOSFET ▼ Simple Drive Requirement D2 D1 D2 D1 D1 D1 ▼ Low On-resistance ▼ Fast Switching Performance N-CH BVDSS D2 D2 SO-8 SO-8 G2 S2 G2 G1 S2 S1G1
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AP4575GM
100us
100ms
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AP4513GM
Abstract: No abstract text available
Text: AP4513GM Pb Free Plating Product Advanced Power Electronics Corp. N AND P-CHANNEL ENHANCEMENT MODE POWER MOSFET ▼ Simple Drive Requirement D2 D1 D2 D1 D1 D1 ▼ Low On-resistance ▼ Fast Switching Performance N-CH BVDSS D2 D2 35V RDS ON 36mΩ ID G2 G2
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AP4513GM
100ms
AP4513GM
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AP4511GM
Abstract: AP4511
Text: AP4511GM Pb Free Plating Product Advanced Power Electronics Corp. N AND P-CHANNEL ENHANCEMENT MODE POWER MOSFET ▼ Simple Drive Requirement D2 D1 D2 D1 D1 D1 ▼ Low On-resistance ▼ Fast Switching Performance N-CH BVDSS D2 D2 SO-8 SO-8 35V RDS ON 25mΩ
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AP4511GM
100ms
135oC/W
AP4511GM
AP4511
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APM8001
Abstract: APM8001K apm80 A102 A108 B102 JESD-22 m8580
Text: APM8001K Dual N-Channel Enhancement Mode MOSFET Pin Description Features • D1 D1 80V/4.1A, D2 D2 RDS ON =55mΩ(Typ.) @ VGS = 10V • • Reliable and Rugged S1 G1 S2 Lead Free and Green Devices Available G2 (RoHS Compliant) SOP-8 D1 D1 D2 D2 Applications
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APM8001K
APM8001
APM8001
JESD-22,
APM8001K
apm80
A102
A108
B102
JESD-22
m8580
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AP4503GM
Abstract: DSA00212337 24v 6A mosfet ap4503
Text: AP4503GM Pb Free Plating Product Advanced Power Electronics Corp. N AND P-CHANNEL ENHANCEMENT MODE POWER MOSFET ▼ Simple Drive Requirement D2 D1 D2 D1 D1 D1 ▼ Low On-resistance ▼ Fast Switching Performance N-CH BVDSS D2 D2 SO-8 SO-8 30V RDS ON 28mΩ
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AP4503GM
135oC/W
AP4503GM
DSA00212337
24v 6A mosfet
ap4503
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Untitled
Abstract: No abstract text available
Text: SSD2007A Dual N-CHANNEL POWER MOSFET FEATURES 8 SOP S1 1 8 D1 G1 2 7 D1 ! Extremely Lower RDS ON S2 3 6 D2 ! Improved Inductive Ruggedness ! Fast Switching Times G2 4 5 D2 Top View ! Rugged Polysilicon Gate Cell Structure ! Low Input Capacitance D1,D2 D1,D2
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SSD2007A
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