D0Q27 Search Results

NTE1548

Abstract: vertical Circuit tv
Contextual Info: N T E ELECTRONICS INC S2E D • bMSlBS6 D0Q27ÖS 3T1 BiNTE LINEA R-lN-TEGRATED-CIRCU ITS T- FM Noise Suppressor, Vcc s 16V Input 10-Lead DIP, See Dlag. 248 n HQ HPF TV Sync Procw/X-Ray Protect, Vcc = 15V Vertical Drive Feedback 16-Lead DIP, See Dlag. 248

Contextual Info: mosaic 512K x 32 FLASH MODULE PUMA 2/67/77F16006/A-80/90/12/15 semiconductor, inc. Issue 4 .0 : Novem ber 1996 Description Features Mosaic offers a flexible range of high density • 16 Megabit CMOS 5.0V operation only FLASH • Modules in industry standard packages. These

L2376

Abstract: G0027 pulsed laser diode GaAs 905
Contextual Info: HAMAMATSU H A M HE. D CÔRP A M A T S MSSibüT G0027Ô4 S HIGH-POWER INFRARED PULSED LASER DIODE L2376 SERIES U TECHNICAL DATA The L2376 series are high-power infrared pulsed laser diodes having a GaAs/GaAIAs double hetero-structure. According to the output power, three types are provided;

B1720-02

Abstract: B1720-05 B1920-01 B2144-01 B1720 1x10-11 B1919-01 B2144 B1720-04 B1918
Contextual Info: HA MA M A T S U CORP D • 4ESTbOT 0QQ271S T ■ Ge Photodiodes: Uncooled Types Type No. Out­ line No. /P.28\ \ 29/ Package Window Material B1720-04 O 3 pin TO-18 B B1720-02 3 pin TO-18 B B1720-05 3 pin TO-18 B2144 B1918 O B1918-01 B1919 B1919-01 B1920-01

E4001

Abstract: pin diagram of 7420
Contextual Info: 128K x 32 EEPROM Module mosaic PUMA 2E4001-15/ 17/20 Issue 4.1 : September 1996 semiconductor, inc. Description The PUMA 2E4001 is a 4Mbit CMOS EEPROM organised as 128k x 32 in a 66 pin PGA ceramic package. Access times of 150, 170 and 200ns are available. The device has a user configurable output

B1919-01

Abstract: B1920-01 hamamatsu PIN TO5
Contextual Info: HA MA M A T S U CORP D • 4ESTbOT 0QQ271S T ■ Ge Photodiodes: Uncooled Types Characteristics O Type No. Out­ line No. /P.28\ \ 29/ Package Window Material B1720-04 O 3 pin TO-18 B B1720-02 3 pin TO-18 B B1720-05 3 pin TO-18 B2144 B1918 O B1918-01 B1919

Contextual Info: MI CR ON T E C H N O L O G Y 3ÛE D INC blLlSM^ ÜGQE753 b IMRN 7^V ¿-23-O S 256K X 1 SRAM SRAM FEATURES • High speed: 20,25,30,35, and 45ns • High-performance, low-power, CMOS double metal process • Single+5V ±10% power supply • Easy memory expansion with CE option

Contextual Info: LATTICE SEMICONDUCTOR böE J> • DDD2730 TE5 * L A T Lattice G A L 1 6 V 8 High Performance E2CMOS PLD Generic Array Logic ■■■■■■ FUNCTIONAL BLOCK DIAGRAM FEATURES • HIGH PERFORMANCE E2CMOS TECHNOLOGY — 5 ns Maximum Propagation Delay

kd 503 transistor

Contextual Info: S E M I C O N D U C T O R , I N C 7Q St BLANK TQ6122 MSB B4 Y B5 T B6 ECLINPUT BUFFERS MULTIPLEXER Vss (-5 V) BLANKING LOGIC BLANK DO- D4 D5 ) O D7 D6 MASTER LATCH I I I BINARY-T0-N-0F-7 SEGMENT ENCODER I I I I I I I ff BLANK 0 0 -04

2N6960

Abstract: TO114 SDT96302 SDT96303 2N4002 2N5678 2N421 2N6742 2N6884 SDT8756
Contextual Info: n? SOLITRON DEVICES 95D 0277 3 INC S0LITR0N DEVICES INC TS D T - 3 3 - O Z D f F | fl3bflbDS 0002773 1 |~ [ ^ m © ^ © M ^ y o © P L A N A R P O W E R T R A N S IS T O R S Devices, Inc. @ 1] MOW? Ic A) *T MIN (MHz) PT MAX (W) CASE TYPE CHIP TYPE 1.50