D06S60 Search Results
D06S60 Price and Stock
Samtec Inc IDSD-06-S-60.00INSULATION DISPLACEMENT TERMINAL |
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Samtec Inc TCSD-06-S-60.00-012MM DOUBLE ROW FEMALE IDC ASSEMB |
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Samtec Inc IDSD-06-S-60.00-ST8INSULATION DISPLACEMENT TERMINAL |
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Samtec Inc FFSD-06-S-60.00-01-N.050 X .050 C.L. FEMALE IDC ASSE |
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Samtec Inc IDMD-06-S-60.00-G |
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D06S60 Datasheets Context Search
Catalog Datasheet | Type | Document Tags | |
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D06S60C
Abstract: IDV06S60C Schottky diode TO220 JESD22 d06s60
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IDV06S60C IDVxxS60C O220FullPAK D06S60C IDV06S60C Schottky diode TO220 JESD22 d06s60 | |
D06S60
Abstract: Q67040-S4370 P-TO263-3-2 T-1228 SDB06S60 SDP06S60 smd schottky diode marking 6a
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SDB06S60 Q67040-S4370 D06S60 D06S60 Q67040-S4370 P-TO263-3-2 T-1228 SDB06S60 SDP06S60 smd schottky diode marking 6a | |
d06s60
Abstract: T-1228 to220 pcb footprint SDB06S60 SDP06S60 SDT06S60
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SDP06S60, SDB06S60 SDT06S60 P-TO220-2-2. P-TO220-3 P-TO220-3-1. SDP06S60 Q67040-S4371 D06S60 d06s60 T-1228 to220 pcb footprint SDB06S60 SDP06S60 SDT06S60 | |
D06S60CContextual Info: IDT06S60C 2nd generation thinQ!TM SiC Schottky Diode Features • Revolutionary semiconductor material - Silicon Carbide • Switching behavior benchmark Product Summary V DC 600 V Qc 15 nC IF 6 A • No reverse recovery/ No forward recovery • No temperature influence on the switching behavior |
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IDT06S60C PG-TO220-2-2 IDT06S60C PG-TO220-2-2 D06S60C | |
IDT06S60C
Abstract: D06S60C
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IDT06S60C PG-TO220-2-2 20mA2) IDT06S60C D06S60C | |
D06S60CContextual Info: IDB06S60C 2ndGeneration thinQ!TM SiC Schottky Diode Product Summary Features • Revolutionary semiconductor material - Silicon Carbide • Switching behavior benchmark • No reverse recovery/ No forward recovery VDC 600 V Qc 15 nC IF 6 A • No temperature influence on the switching behavior |
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IDB06S60C PG-TO263-3-2) D06S60C D06S60C | |
D06S60CContextual Info: IDH06S60C 2ndGeneration thinQ!TM SiC Schottky Diode Product Summary Features • Revolutionary semiconductor material - Silicon Carbide • Switching behavior benchmark VDC 600 V Qc 15 nC IF 6 A • No reverse recovery/ No forward recovery • No temperature influence on the switching behavior |
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IDH06S60C PG-TO220-2 D06S60C D06S60C | |
d06s60
Abstract: D06S60C smd diode marking code UJ T-1228 SDB06S60 SDP06S60 SDT06S60 d 132 smd diode diode smd marking code 435
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SDP06S60, SDB06S60 SDT06S60 P-TO220-2-2. P-TO220-3 P-TO220-3-1. SDP06S60 Q67040-S4371 D06S60 d06s60 D06S60C smd diode marking code UJ T-1228 SDB06S60 SDP06S60 SDT06S60 d 132 smd diode diode smd marking code 435 | |
D06S60C
Abstract: IDT06S60C JESD22 d06s60
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IDT06S60C PG-TO220-2-2 D06S60C PG-TO220-2-2: D06S60C IDT06S60C JESD22 d06s60 | |
SDP06S60Contextual Info: SDP06S60 SDT06S60 thinQ!¥ SiC Schottky Diode Silicon Carbide Schottky Diode • Worlds first 600V Schottky diode Product Summary • Revolutionary semiconductor V 600 VRRM material - Silicon Carbide • Switching behavior benchmark Qc 21 nC • No reverse recovery |
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SDP06S60 SDT06S60 PG-TO220-2-2. P-TO220 P-TO220-3 Q67040-S4371 Q67040-S4446 | |
d06s60
Abstract: diode schottky 600v T-1228 SDB06S60 SDP06S60 smd diode marking code UJ
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SDB06S60 P-TO220-3 Q67040-S4370 D06S60 d06s60 diode schottky 600v T-1228 SDB06S60 SDP06S60 smd diode marking code UJ | |
d06s60
Abstract: D06S60C to220 pcb footprint smd diode marking code UJ T-1228 s4371 SDT06S60 SDB06S60 SDP06S60 AG Qc smd
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SDP06S60, SDB06S60 SDT06S60 P-TO220-2-21. P-TO220-3 P-TO220-3-1. SDP06S60 Q67040-S4371 D06S60 d06s60 D06S60C to220 pcb footprint smd diode marking code UJ T-1228 s4371 SDT06S60 SDB06S60 SDP06S60 AG Qc smd | |
d06s60
Abstract: D06S60C SDT06S60 SDP06S60 Schottky diode TO220 T-1228 diode schottky 600v Q67040-S4446 600 V power Schottky silicon carbide diode PG-TO220-2-2
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SDP06S60 SDT06S60 PG-TO220-2-2. P-TO220 P-TO220-3 Q67040-S4371 D06S60 d06s60 D06S60C SDT06S60 SDP06S60 Schottky diode TO220 T-1228 diode schottky 600v Q67040-S4446 600 V power Schottky silicon carbide diode PG-TO220-2-2 | |
D06S60C
Abstract: IDH06S60C JESD22 60-06A D06S60
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IDH06S60C PG-TO220-2 D06S60C D06S60C IDH06S60C JESD22 60-06A D06S60 | |
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Contextual Info: S iC Silicon Carbide Diode 2 n d G e n e r a t io n t h in Q ! 2nd Generation thinQ!™ SiC Schottky Diode IDV06S60C Data Sheet Rev. 2.0, 2010-01-14 Final In d u s tr ia l & M u l ti m a r k e t 2nd Generation thinQ!™ SiC Schottky Diode 1 IDV06S60C Description |
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IDV06S60C IDVxxS60C O220FullPAK | |
D06S60C
Abstract: IDB06S60C JESD22 smd diode MARKING F6 SMD F6 DIODE Diode smd f6
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IDB06S60C D06S60C D06S60C IDB06S60C JESD22 smd diode MARKING F6 SMD F6 DIODE Diode smd f6 | |
Q67040-S4371
Abstract: D06S60 P-TO220-3 SDT06S60 Q67040-S4446
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SDP06S60 SDT06S60 PG-TO220-2-2. P-TO220-3 P-TO220-3 Q67040-S4371 Q67040-S4446 D06S60 SDT06S60 Q67040-S4446 | |
D06S60C
Abstract: Diode smd f6 schottky IDB06S60C JESD22 smd diode F6 Diode smd f6 SMD F6 DIODE smd diode MARKING F6
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IDB06S60C PG-TO220-3-45) D06S60C D06S60C Diode smd f6 schottky IDB06S60C JESD22 smd diode F6 Diode smd f6 SMD F6 DIODE smd diode MARKING F6 | |
d06s60Contextual Info: SDP06S60 SDT06S60 thinQ! SiC Schottky Diode Silicon Carbide Schottky Diode • Worlds first 600V Schottky diode Product Summary • Revolutionary semiconductor V 600 VRRM material - Silicon Carbide • Switching behavior benchmark Qc 21 nC • No reverse recovery |
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SDP06S60 SDT06S60 PG-TO220-2-2. PG-TO220-3-1. Q67040-S4371 Q67040-S4446 d06s60 | |
Q67040-S4370Contextual Info: SDP06S60 SDB06S60 Preliminary data Silicon Carbide Schottky Diode • Worlds first 600V Schottky diode Product Summary • Revolutionary semiconductor V 600 VRRM material - Silicon Carbide • Switching behavior benchmark Qc 21 nC • No reverse recovery IF |
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SDP06S60 SDB06S60 P-TO220-3 P-TO220-3-1 Q67040-S4371 D06S60 Q67040-S4370 | |
D06S60C
Abstract: d06s60 IDT06S60C JESD22 diode c25
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IDT06S60C PG-TO220-2-2 D06S60C D06S60C d06s60 IDT06S60C JESD22 diode c25 | |
D06S60CContextual Info: IDH06S60C 2ndGeneration thinQ!TM SiC Schottky Diode Product Summary Features • Revolutionary semiconductor material - Silicon Carbide • Switching behavior benchmark VDC 600 V Qc 15 nC IF 6 A • No reverse recovery/ No forward recovery • No temperature influence on the switching behavior |
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IDH06S60C IDH06S60C PG-TO220-2 D06S60C | |
Contextual Info: IDB06S60C 2ndGeneration thinQ!TM SiC Schottky Diode Product Summary Features • Revolutionary semiconductor material - Silicon Carbide • Switching behavior benchmark V DC 600 V Qc 15 nC IF 6 A • No reverse recovery/ No forward recovery • No temperature influence on the switching behavior |
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IDB06S60C PG-TO220-3-45) D06S60C | |
smd diode MARKING F6
Abstract: Diode smd f6 schottky d06s60 SMD F6 DIODE D06S60C smd diode F6
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IDB06S60C PG-TO220-3-45 D06S60C smd diode MARKING F6 Diode smd f6 schottky d06s60 SMD F6 DIODE D06S60C smd diode F6 |