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    D04S6 Search Results

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    D04S6 Price and Stock

    Infineon Technologies AG SDD04S60

    DIODE SIC 600V 4A PGTO252311
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    DigiKey SDD04S60 Reel 2,500
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    Bristol Electronics SDD04S60 2,549
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    ComSIT USA SDD04S60 4,744
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    Infineon Technologies AG IDD04S60CBUMA1

    DIODE SIC 600V 5.6A TO252-31
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    DigiKey IDD04S60CBUMA1 Cut Tape
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    EBV Elektronik IDD04S60CBUMA1 143 Weeks 2,500
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    Vyrian IDD04S60CBUMA1 946
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    Samtec Inc FFMD-04-S-60.00-01

    .050" TIGER EYE IDC RIBBON CABLE
    Free Sample
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    DigiKey FFMD-04-S-60.00-01 Bulk 1
    • 1 $16.94
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    Avnet Americas FFMD-04-S-60.00-01 Bulk 1
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    Mouser Electronics FFMD-04-S-60.00-01
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    Master Electronics FFMD-04-S-60.00-01
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    Sager FFMD-04-S-60.00-01 1
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    Samtec Inc IDSD-04-S-60.00-ST8

    INSULATION DISPLACEMENT TERMINAL
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    DigiKey IDSD-04-S-60.00-ST8 Bulk 1
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    Avnet Americas IDSD-04-S-60.00-ST8 Bulk 1
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    Mouser Electronics IDSD-04-S-60.00-ST8
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    Newark IDSD-04-S-60.00-ST8 Bulk 1
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    Master Electronics IDSD-04-S-60.00-ST8
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    Sager IDSD-04-S-60.00-ST8 1
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    Samtec Inc HCMD-04-S-60.00-02-S

    IDC SOCKET AND TERMINAL CABLE AS
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    DigiKey HCMD-04-S-60.00-02-S Bulk 500
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    Avnet Americas HCMD-04-S-60.00-02-S Bulk 1
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    Mouser Electronics HCMD-04-S-60.00-02-S
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    Master Electronics HCMD-04-S-60.00-02-S
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    Sager HCMD-04-S-60.00-02-S 1
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    Find more D04S6 price and stock on Findchips.com

    D04S6 Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    smd diode marking f4

    Abstract: idd04
    Text: D04S60C 2ndGeneration thinQ!TM SiC Schottky Diode Product Summary Features VDC 600 • Switching behavior benchmark Qc 8 nC • No reverse recovery/ No forward recovery IF 4 A • Revolutionary semiconductor material - Silicon Carbide V • No temperature influence on the switching behavior


    Original     		IDD04S60C 20mA2) PG-TO252 IDD04S60C smd diode marking f4 idd04 PDF

    PG-TO252-3-1

    Abstract: No abstract text available
    Text: SDP04S60, D04S60 SDT04S60 thinQ!¥ SiC Schottky Diode Silicon Carbide Schottky Diode • Worlds first 600V Schottky diode Product Summary • Revolutionary semiconductor V 600 VRRM material - Silicon Carbide • Switching behavior benchmark Qc 13 nC • No reverse recovery


    Original     		SDP04S60, SDD04S60 SDT04S60 PG-TO220-2-2. P-TO252-3- P-TO220-3 SDP04S60 P-TO220-3 PG-TO252-3-1 PDF

    D04S60

    Abstract: d04s6
    Text: SDP04S60, D04S60 SDT04S60 Preliminary data Silicon Carbide Schottky Diode  Worlds first 600V Schottky diode Product Summary V VRRM 600  Revolutionary semiconductor material - Silicon Carbide  Switching behavior benchmark Qc 13 nC  No reverse recovery


    Original     		SDP04S60, SDD04S60 SDT04S60 P-TO220-2-2. P-TO252-3-1. P-TO220-3-1. SDP04S60 D04S60 d04s6 PDF

    Untitled

    Abstract: No abstract text available
    Text: SDP04S60 D04S60 Preliminary data Silicon Carbide Schottky Diode • Worlds first 600V Schottky diode Product Summary • Revolutionary semiconductor V 600 VRRM material - Silicon Carbide • Switching behavior benchmark Qc 13 nC • No reverse recovery IF


    Original     		SDP04S60 SDD04S60 P-TO252-3-1 P-TO220-3-1 Q67040-S4369 D04S60 PDF

    Untitled

    Abstract: No abstract text available
    Text: S iC Silicon Carbide Diode 2 n d G e n e r a t io n t h in Q ! 2nd Generation thinQ!™ SiC Schottky Diode IDV04S60C Data Sheet Rev. 2.0, 2010-01-08 Final In d u s tr ia l & M u l ti m a r k e t 2nd Generation thinQ!™ SiC Schottky Diode 1 IDV04S60C Description


    Original     		IDV04S60C IDVxxS60C O220FullPAK PDF

    D04S60

    Abstract: P-TO252 Q67040-S4368 Q67040-S4369 Q67040-S4445 SDD04S60 SDP04S60 SDT04S60 SCHOTTKY 4A 600V
    Text: SDP04S60, D04S60 SDT04S60 thinQ! SiC Schottky Diode Silicon Carbide Schottky Diode • Worlds first 600V Schottky diode Product Summary • Revolutionary semiconductor V 600 VRRM material - Silicon Carbide • Switching behavior benchmark Qc 13 nC • No reverse recovery


    Original     		SDP04S60, SDD04S60 SDT04S60 P-TO220-2-2. P-TO252-3-1. P-TO220-3-1. SDP04S60 Q67040-S4369 D04S60 D04S60 P-TO252 Q67040-S4368 Q67040-S4369 Q67040-S4445 SDD04S60 SDP04S60 SDT04S60 SCHOTTKY 4A 600V PDF

    Untitled

    Abstract: No abstract text available
    Text: IDH04S60C 2ndGeneration thinQ!TM SiC Schottky Diode Product Summary Features • Revolutionary semiconductor material - Silicon Carbide • Switching behavior benchmark • No reverse recovery/ No forward recovery VDC 600 V Qc 8 nC IF 4 A • No temperature influence on the switching behavior


    Original     		IDH04S60C PG-TO220-2 D04S60C PDF

    d04s60c

    Abstract: IDT04S60C JESD22 D04S60
    Text: IDT04S60C 2ndGeneration thinQ!TM SiC Schottky Diode Features • Revolutionary semiconductor material - Silicon Carbide • Switching behavior benchmark Product Summary V DC 600 V Qc 8 nC IF 4 A • No reverse recovery/ No forward recovery • No temperature influence on the switching behavior


    Original     		IDT04S60C PG-TO220-2-2 D04S60C d04s60c IDT04S60C JESD22 D04S60 PDF

    D04S60C

    Abstract: IDT04S60C JESD22 PG-TO220-2-2
    Text: IDT04S60C 2ndGeneration thinQ!TM SiC Schottky Diode Features • Revolutionary semiconductor material - Silicon Carbide • Switching behavior benchmark Product Summary V DC 600 V Qc 8 nC IF 4 A • No reverse recovery/ No forward recovery • No temperature influence on the switching behavior


    Original     		IDT04S60C PG-TO220-2-2 D04S60C D04S60C IDT04S60C JESD22 PG-TO220-2-2 PDF

    D04S60

    Abstract: to220 pcb footprint smd schottky diode marking 321 Schottky diode TO220 diode schottky 600v D04S60C TO252-3 material case SDP04S60 P-TO252 PG-TO252-3-1
    Text: SDP04S60, D04S60 SDT04S60 thinQ!¥ SiC Schottky Diode Silicon Carbide Schottky Diode • Worlds first 600V Schottky diode Product Summary • Revolutionary semiconductor V 600 VRRM material - Silicon Carbide • Switching behavior benchmark Qc 13 nC • No reverse recovery


    Original     		SDP04S60, SDD04S60 SDT04S60 PG-TO220-2-2. P-TO252 P-TO220 SDP04S60 P-TO220-3 Q67040-S4369 D04S60 D04S60 to220 pcb footprint smd schottky diode marking 321 Schottky diode TO220 diode schottky 600v D04S60C TO252-3 material case SDP04S60 P-TO252 PG-TO252-3-1 PDF

    D04S60C

    Abstract: IDH04S60C JESD22
    Text: IDH04S60C 2ndGeneration thinQ!TM SiC Schottky Diode Product Summary Features • Revolutionary semiconductor material - Silicon Carbide • Switching behavior benchmark V DC 600 V Qc 8 nC IF 4 A • No reverse recovery/ No forward recovery • No temperature influence on the switching behavior


    Original     		IDH04S60C PG-TO220-2 D04S60C D04S60C IDH04S60C JESD22 PDF

    D04S60C

    Abstract: TO252-3 material case to252-3-11 IDD04S60C infineon msl DIODE smd marking Ag TO252 rthjc JESD22 smd diode f4 51 D04S60
    Text: D04S60C 2ndGeneration thinQ!TM SiC Schottky Diode Product Summary Features • Revolutionary semiconductor material - Silicon Carbide • Switching behavior benchmark V DC 600 V Qc 8 nC IF 4 A • No reverse recovery/ No forward recovery • No temperature influence on the switching behavior


    Original     		IDD04S60C PG-TO252 D04S60C D04S60C TO252-3 material case to252-3-11 IDD04S60C infineon msl DIODE smd marking Ag TO252 rthjc JESD22 smd diode f4 51 D04S60 PDF

    D04S60C

    Abstract: diode it25
    Text: IDH04S60C 2ndGeneration thinQ!TM SiC Schottky Diode Product Summary Features • Revolutionary semiconductor material - Silicon Carbide • Switching behavior benchmark • No reverse recovery/ No forward recovery VDC 600 V Qc 8 nC IF 4 A • No temperature influence on the switching behavior


    Original     		IDH04S60C IDH04S60C PG-TO220-2 D04S60C diode it25 PDF

    Infineon power diffusion process

    Abstract: Schottky diode TO220 D04S60C JESD22
    Text: S iC Silicon Carbide Diode 2 n d G e n e r a t io n t h in Q ! 2nd Generation thinQ!™ SiC Schottky Diode IDV04S60C Data Sheet Rev. 2.0, 2010-01-08 Final In d u s tr ia l & M u l ti m a r k e t 2nd Generation thinQ!™ SiC Schottky Diode 1 IDV04S60C Description


    Original     		IDV04S60C IDVxxS60C O220FullPAK Infineon power diffusion process Schottky diode TO220 D04S60C JESD22 PDF

    DSA0032037

    Abstract: PG-TO252-3-1
    Text: SDP04S60, D04S60 SDT04S60 thinQ!¥ SiC Schottky Diode Silicon Carbide Schottky Diode • Worlds first 600V Schottky diode Product Summary • Revolutionary semiconductor V 600 VRRM material - Silicon Carbide • Switching behavior benchmark Qc 13 nC • No reverse recovery


    Original     		SDP04S60, SDD04S60 SDT04S60 PG-TO220-2-2. PG-TO252-3-1. PG-TO220-3-1. SDP04S60 DSA0032037 PG-TO252-3-1 PDF

    PG-TO252-3-1

    Abstract: PG-TO-252-3-1
    Text: SDP04S60, D04S60 SDT04S60 thinQ! SiC Schottky Diode Silicon Carbide Schottky Diode • Worlds first 600V Schottky diode Product Summary • Revolutionary semiconductor V 600 VRRM material - Silicon Carbide • Switching behavior benchmark Qc 13 nC • No reverse recovery


    Original     		SDP04S60, SDD04S60 SDT04S60 PG-TO220-2-2. PG-TO252-3-1. PG-TO220-3-1. SDP04S60 PG-TO252-3-1 PG-TO-252-3-1 PDF

    Untitled

    Abstract: No abstract text available
    Text: D04S60C 2ndGeneration thinQ!TM SiC Schottky Diode Product Summary Features VDC 600 • Switching behavior benchmark Qc 8 nC • No reverse recovery/ No forward recovery IF 4 A • Revolutionary semiconductor material - Silicon Carbide V • No temperature influence on the switching behavior


    Original     		IDD04S60C PG-TO252 20mA2) PDF

    P-TO252

    Abstract: D04S60 diode schottky 600v TO252 rthjc Q67040-S4368 Q67040-S4369 SDD04S60 SDP04S60 SDT04S60
    Text: SDP04S60, D04S60 SDT04S60 Preliminary data Silicon Carbide Schottky Diode  Worlds first 600V Schottky diode Product Summary  Revolutionary semiconductor V 600 VRRM material - Silicon Carbide  Switching behavior benchmark Qc 13 nC  No reverse recovery


    Original     		SDP04S60, SDD04S60 SDT04S60 P-TO220-2-21. P-TO252-3-1. P-TO220-3-1. SDP04S60 Q67040-S4369 D04S60 P-TO252 D04S60 diode schottky 600v TO252 rthjc Q67040-S4368 Q67040-S4369 SDD04S60 SDP04S60 SDT04S60 PDF

    to220 pcb footprint

    Abstract: D04S60 P-TO252 Schottky diode TO220 d 1398 infineon 6260 TO252-3 rthjc Q67040-S4368 Q67040-S4369 Q67040-S4445
    Text: SDP04S60, D04S60 SDT04S60 Final data Silicon Carbide Schottky Diode • Worlds first 600V Schottky diode Product Summary • Revolutionary semiconductor V 600 VRRM material - Silicon Carbide • Switching behavior benchmark Qc 13 nC • No reverse recovery


    Original     		SDP04S60, SDD04S60 SDT04S60 P-TO220-2-2. P-TO252-3-1. P-TO220-3-1. SDP04S60 Q67040-S4369 D04S60 to220 pcb footprint D04S60 P-TO252 Schottky diode TO220 d 1398 infineon 6260 TO252-3 rthjc Q67040-S4368 Q67040-S4369 Q67040-S4445 PDF

    D04S60C

    Abstract: IDV04S60C
    Text: S iC Silicon Carbide Diode 2 n d G e n e r a t io n t h in Q ! 2nd Generation thinQ!™ SiC Schottky Diode IDV04S60C Data Sheet Rev. 2.0, 2010-01-08 Final In d u s tr ia l & M u l ti m a r k e t 2nd Generation thinQ!™ SiC Schottky Diode 1 IDV04S60C Description


    Original     		IDV04S60C IDVxxS60C O220FullPAK D04S60C IDV04S60C PDF

    D04S60

    Abstract: smd schottky diode marking 321 PG-TO252-3-1 2t -3-6-5 smd PG-TO-252-3-1 SDP04S60 SCHOTTKY 4A 600V
    Text: SDP04S60, D04S60 SDT04S60 thinQ!¥ SiC Schottky Diode Silicon Carbide Schottky Diode • Worlds first 600V Schottky diode Product Summary • Revolutionary semiconductor V 600 VRRM material - Silicon Carbide • Switching behavior benchmark Qc 13 nC • No reverse recovery


    Original     		SDP04S60, SDD04S60 SDT04S60 PG-TO220-2-2. P-TO252 P-TO220 SDP04S60 P-TO220-3 D04S60 smd schottky diode marking 321 PG-TO252-3-1 2t -3-6-5 smd PG-TO-252-3-1 SCHOTTKY 4A 600V PDF

    Untitled

    Abstract: No abstract text available
    Text: IDT04S60C 2nd Generation thinQ! SiC Schottky Diode Features Product Summary V DC 600 V • Switching behavior benchmark Qc 8 nC • No reverse recovery/ No forward recovery I F @ T C < 140°C 4 A I F @ T C < 100°C 6 A • Revolutionary semiconductor material - Silicon Carbide


    Original     		IDT04S60C PG-TO220-2-2 PDF

    D04S60C

    Abstract: D04S60 Q67040-S4368 Q67040-S4369 Q67040-S4445 SDD04S60 SDP04S60 SDT04S60 SCHOTTKY 4A 600V
    Text: SDP04S60, D04S60 SDT04S60 Final data Silicon Carbide Schottky Diode  Worlds first 600V Schottky diode Product Summary V VRRM 600  Revolutionary semiconductor material - Silicon Carbide  Switching behavior benchmark Qc 13 nC  No reverse recovery IF 4


    Original     		SDP04S60, SDD04S60 SDT04S60 P-TO220-2-2. P-TO252-3-1. P-TO220-3-1. SDP04S60 Q67040-S4369 D04S60 D04S60C D04S60 Q67040-S4368 Q67040-S4369 Q67040-S4445 SDD04S60 SDP04S60 SDT04S60 SCHOTTKY 4A 600V PDF