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Part	ECAD Model	Manufacturer	Description	Download	Buy
G861AD04511T1EU		Amphenol Communications Solutions	Wafer 2.54mm Pitch STR DIP, 1x4Pin, MATTE TIN, NY66, TAIL=3.4mm, Color-CREAM, Halogen Free, Friction

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ROHM Semiconductor BV1HD045EFJ-CE2 AUTOMOTIVE 1CH 45 M HIGH-SIDE SW
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	BV1HD045EFJ-CE2	Cut Tape	4,757		1	1 $2.22 10 $1.385 100 $0.9219 1000 $0.66473 10000 $0.66473	Buy Now
	BV1HD045EFJ-CE2	Digi-Reel	4,757		1	1 $2.22 10 $1.385 100 $0.9219 1000 $0.66473 10000 $0.66473	Buy Now
	BV1HD045EFJ-CE2	Reel	2,500		2,500	1 - 10 - 100 - 1000 - 10000 $0.56625	Buy Now
Mouser Electronics	BV1HD045EFJ-CE2		4,237			1 $1.96 10 $1.17 100 $0.802 1000 $0.665 10000 $0.566	Buy Now
Newark	BV1HD045EFJ-CE2	Cut Tape	73		1	1 $1.81 10 $1.25 100 $0.885 1000 $0.731 10000 $0.731	Buy Now
Chip1Stop	BV1HD045EFJ-CE2	Cut Tape	2,454			1 - 10 $1.15 100 $0.816 1000 $0.674 10000 $0.674	Buy Now
Visual Communications Company VBL3D0450C VBL SERIES,PCB MOUNT,3MM,.45"L,D
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DigiKey	VBL3D0450C	Bulk	3,438		1	1 $0.54 10 $0.35 100 $0.54 1000 $0.2125 10000 $0.2125	Buy Now
Mouser Electronics	VBL3D0450C		1,341			1 $0.53 10 $0.35 100 $0.23 1000 $0.212 10000 $0.212	Buy Now
RS	VBL3D0450C	Bulk	1,000		1	1 $0.535 10 $0.455 100 $0.418 1000 $0.375 10000 $0.375	Buy Now
Samtec Inc FFSD-17-D-04.50-01-N .050 X .050 C.L. FEMALE IDC ASSE Free Sample
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DigiKey	FFSD-17-D-04.50-01-N	Bulk	102		1	1 $18.66 10 $15.205 100 $12.3975 1000 $11.60048 10000 $11.60048	Buy Now
Samtec Inc FFSD-22-D-04.50-01-N .050 X .050 C.L. FEMALE IDC ASSE Free Sample
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DigiKey	FFSD-22-D-04.50-01-N	Bulk	99		1	1 $15.47 10 $13.962 100 $13.962 1000 $13.962 10000 $13.962	Buy Now
Samtec Inc IDSD-32-D-04.50-G INSULATION DISPLACEMENT TERMINAL Free Sample
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DigiKey	IDSD-32-D-04.50-G	Bulk	77		1	1 $19.85 10 $18.79 100 $14.4401 1000 $13.3625 10000 $13.3625	Buy Now

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D045 Datasheets Context Search

Catalog Datasheet	MFG & Type	PDF	Document Tags
18f24k22 Abstract: PIC18f45k22 example C18 codes pic18F26K22 example C codes pic18F44K22 PIC18F45K22 PIC18f46k22 example C18 codes i2c pin diagram of PIC18f45k22 pin diagram of PIC18LF45k22 embedded microcontroller PIC18FXXK22 PIC18 example C18 codes spi Text: PIC18 L F2X/4XK22 Data Sheet 28/40/44-Pin, Low-Power, High-Performance Microcontrollers with nanoWatt XLP Technology  2010 Microchip Technology Inc. Preliminary DS41412B Note the following details of the code protection feature on Microchip devices: •	Original	PDF	PIC18 F2X/4XK22 28/40/44-Pin, DS41412B DS41412B-page 18f24k22 PIC18f45k22 example C18 codes pic18F26K22 example C codes pic18F44K22 PIC18F45K22 PIC18f46k22 example C18 codes i2c pin diagram of PIC18f45k22 pin diagram of PIC18LF45k22 embedded microcontroller PIC18FXXK22 PIC18 example C18 codes spi
AD5450 Abstract: AD8038 OP177 AD5451 AD5452 AD5453 EVAL-AD5453EBZ Text: 8-/10-/12-/14-Bit High Bandwidth Multiplying DACs with Serial Interface AD5450/AD5451/AD5452/AD5453 FEATURES FUNCTIONAL BLOCK DIAGRAM 12 MHz multiplying bandwidth INL of ±0.25 LSB @ 8-bit 8-lead TSOT and MSOP packages 2.5 V to 5.5 V supply operation Pin-compatible 8-/10-/12-/14-bit current output DACs	Original	PDF	8-/10-/12-/14-Bit AD5450/AD5451/AD5452/AD5453 AD5450/ AD5451/ AD5452/ AD5453 AD5450 AD8038 OP177 AD5451 AD5452 AD5453 EVAL-AD5453EBZ
ADM6316AY27ARJZ-R7 Abstract: ADM6322xxARJ-RL7 ADM6316CY29-ARJZ-R7 ADM6320CX29-ARJZ-R7 ADM6321BZ25ARJZ-R7 ADM6319xxARJ-RL7 ADM6322 ADM6316 ADM6318CY29ARJZ-R7 ADM6318 Text: Supervisory Circuits with Watchdog and Manual Reset in 5-Lead SOT-23 FEATURES FUNCTIONAL BLOCK DIAGRAMS 26 reset threshold options 2.5 V to 5 V in 100 mV increments 4 reset timeout options 1 ms, 20 ms, 140 ms, and 1120 ms minimum	Original	PDF	OT-23 7/ADM6318/ADM6319/ADM6320/ADM6321/ADM6322 OT-23 ADM6316 ADM6319/ADM6322. D04533-0-10/10 ADM6316AY27ARJZ-R7 ADM6322xxARJ-RL7 ADM6316CY29-ARJZ-R7 ADM6320CX29-ARJZ-R7 ADM6321BZ25ARJZ-R7 ADM6319xxARJ-RL7 ADM6322 ADM6316 ADM6318CY29ARJZ-R7 ADM6318
pin diagram of PIC18f45k22 Abstract: PIC18F45K22 18F25K22 pic18F26K22 example C codes PIC18F26k22 PIC18F k22 PIC18LF26K22 PIC18F46K22 DS41412D PIC18FXXK22 Text: PIC18 L F2X/4XK22 Data Sheet 28/40/44-Pin, Low-Power, High-Performance Microcontrollers with nanoWatt XLP Technology  2010 Microchip Technology Inc. Preliminary DS41412D Note the following details of the code protection feature on Microchip devices: •	Original	PDF	PIC18 F2X/4XK22 28/40/44-Pin, DS41412D DS41412D-page pin diagram of PIC18f45k22 PIC18F45K22 18F25K22 pic18F26K22 example C codes PIC18F26k22 PIC18F k22 PIC18LF26K22 PIC18F46K22 DS41412D PIC18FXXK22
ADR430 Abstract: ADR435 ADR430A ADR430B ADR431 ADR431A ADR431B ADR433 ADR433A ADR434 Text: Ultralow Noise XFET Voltage References with Current Sink and Source Capability ADR430/ADR431/ADR433/ADR434/ADR435/ADR439 FEATURES PIN CONFIGURATIONS Low noise 0.1 Hz to 10.0 Hz : 3.5 V p-p @ 2.5 V output No external capacitor required Low temperature coefficient	Original	PDF	ADR430/ADR431/ADR433/ADR434/ADR435/ADR439 ADR430: ADR431: ADR433: ADR434: ADR435: ADR439: ADR43x ADR430 ADR435 ADR430A ADR430B ADR431 ADR431A ADR431B ADR433 ADR433A ADR434
bby36 Abstract: bby27 BBY24-S1 BBY25-S1 BBY26-S1 BBY27-S2 BBY33DA2 BBY34D BBY35F D035 Text: SIEMENS AKTIEN 6ESELLS CHA F bGE D Û2 3£b 05 D045M34 b n B IS IE Û Microwave, RF & Tuner Diodes 0 7 -/7 For complete package outlines, refsr to pages PO-1 through PO-6 Hyperabrupt Varactors Maximum Ratings ^R V BBY34D BBY35F BBY36 Characteristics T =25°C	OCR Scan	PDF	D045434 BBY34D BBY35F BBY36 BBY24-S1 BBY25-S1 BBY26-S1 bby27 BBY27-S2 BBY33DA2 D035
TPI80 Abstract: No abstract text available Text: • 7^ 5 3 7 D045344 7 CÌG ■ SGTH SGS-THOMSON * 7£ [M M iL iM *! _ TPI80 / TPI120 TRIBALANCED PROTECTION FOR ISDN INTERFACES PR ELIM IN A R Y D A TASHEET DESCRIPTION TRIBALANCED PROTECTION ■ Dedicated devices for ISDN interfaces and	OCR Scan	PDF	D045344 TPI80 TPI120 TPI80/
BFQ254 Abstract: BFQ234 UBB692 sot172a3 Text: Product specification Philips Semiconductors r- 7 ^ 3 S " / 7 BFQ254; BFQ254/I PNP 1 GHz video transistor PHILIPS 7110fi2ti D045b3D ITI B I P H I N SbE » INTERNATIONAL PINNING DESCRIPTION PNP silicon epitaxial transistor in SOT172A1 and SOT172A3 envelopes,	OCR Scan	PDF	33-/Z BFQ254; BFQ254/I 711062b D045b3D OT172A1 OT172A3 BFQ254 OT172A1) BFQ254/I BFQ234 UBB692 sot172a3
BFR96 Abstract: BFR96 philips BFR96 LOW POWER TRANSISTOR for transistor bfr96 BFQ32 4 20 mA 1992 transistor bfr96 philips bfq32 BFR96$ a 933 transistor Text: Philips Sem iconductors Product specification ^ NPN 5 GHz wideband transistor DESCRIPTION VllDfiEb D04577b lfl7 « P H I N SbE D PHILIPS INTERNA TIONAL BFR96 PINNING NPN transistor in a plastic SOT37 envelope primarily intended for use in RF wideband amplifiers such as	OCR Scan	PDF	BFR96 DD4S77b ON4487) BFQ32. coll801 711082b BFR96 philips BFR96 LOW POWER TRANSISTOR for transistor bfr96 BFQ32 4 20 mA 1992 transistor bfr96 philips bfq32 BFR96$ a 933 transistor
Untitled Abstract: No abstract text available Text: 4302271 D045b7b fifl4 H H A S ££ H A R R IS S E M I C O N D U C T O R REGISTRATION PENDING Currently Available as FRL130 D, R, H) 2N7272D, 2N7272R 2N7272H Radiation Hardened N-Channel Power MOSFETs December 1992 Features • 8A. 100V, RDS(on) • 0.180«	OCR Scan	PDF	D045b7b FRL130 2N7272D, 2N7272R 2N7272H 100KRAD 300KRAD 1000KRAD 3000KRAD
SOT-173 Abstract: SOT173 SOT173 RF transistor NPN planar RF transistor BFP540 wideband transistor sot173 Text: Philips Objective specification 3 !~~^3 NPN 9 GHz wideband transistor PHILIPS INTERNATIONAL FEATURES 5bE D • BFP540 711DflSb D0453flfci HT2 ■ PHIN PINNING PIN • High power gain • Low noise figure	OCR Scan	PDF	BFP540 QQ453Ã OT173X) BFP540 OT173 OT173X OT173. OT173X. SOT-173 SOT173 SOT173 RF transistor NPN planar RF transistor wideband transistor sot173
Untitled Abstract: No abstract text available Text: Philips Objective specification "T-13 /"* NPN 9 GHz wideband transistor P H I L IP S I N T E R N A T I O N A L FEATURES SbE D • BFP540 7 1 1 D 6 5 b D0453flfci 4T2 II PHIN PINNING • High power gain	OCR Scan	PDF	OT173X) 8FP540 OT173 BFP540 D0453flfci
2269H Abstract: No abstract text available Text: TOSHIBA THMY7216C1EG-80H TENTATIVE TOSHIBA HYBRID DIGITAL INTEGRATED CIRCUIT 16,777,216-WORD BY 72-BIT SYNCHRONOUS DRAM MODULE DESCRIPTION The THMY7216C1EG is a 16,777,216-word by 72-bit synchronous dynamic RAM module consisting of 18 TC59S6408FT DRAMs and an unbuffer on a printed circuit board.	OCR Scan	PDF	THMY7216C1EG-80H 216-WORD 72-BIT THMY7216C1EG TC59S6408FT 72-bit THMY7216C1EG) 2269H
TCK-1000 Abstract: D038 toshiba M7 Text: TO SH IBA THM Y6480F1 BEG-80 TEN TA TIVE TOSHIBA HYBRID DIGITAL INTEGRATED CIRCUIT 8,388, 6 O8-W O RD B Y 64-BIT SYN CH R O N O U S DRAM M ODULE D ESCRIPTIO N The THMY6480F1BEG is a 8,388,608-word by 64-bit synchronous dynamic RAM module consisting of eight TC59S6408BFT DRAMs and an unbuffer on a printed circuit board.	OCR Scan	PDF	Y6480F1 BEG-80 64-BIT THMY6480F1BEG 608-word TC59S6408BFT 64-bit THMY6480F1 TCK-1000 D038 toshiba M7

Untitled Abstract: No abstract text available Text: IBM13M16734BCD 16M x 72 1 B ank R eg istered/B uffered S D R A M M odule Features • 168-Pin Registered 8-Byte Dual In-Line Memory Module • 16Mx72 Synchronous DRAM DIMM • Performance: -10 j Device Latency j Clock Frequency j -260 \| -360 I 3 j 2 ; 2 66 j 100 5 100 j	OCR Scan	PDF	IBM13M16734BCD 168-Pin 16Mx72 66/100MHz PC100 19L7292 E93875A 9L7292
transistor BFR91 Abstract: BFR91 transistor BFR91 philips bfq23 BFQ23 BFR91 NPN 6 GHz Wideband Transistor Text: P hilips Sem iconductors Product specification 7= -3 / ' / 7 NPN 5 GHz wideband transistor PHILIPS INTERNATIONAL DESCRIPTION £ SbE D 7110ö2ti 004.5704 T^O * P H I N PINNING NPN transistor in a plastic SOT37 envelope primarily intended for use In RF amplifiers such as in aerial	OCR Scan	PDF	BFR91 ON4186) BFQ23. 7110fi2Li BFR91/02 7110flEb D0457GA transistor BFR91 BFR91 transistor BFR91 philips bfq23 BFQ23 BFR91 NPN 6 GHz Wideband Transistor
D018 Abstract: D019 D032 Text: TOSHIBA THMY51E10C70,75,80 TOSHIBA HYBRID DIGITAL INTEGRATED CIRCUIT TENTATIVE 67,108,864-WORD BY 72-BIT SYNCHRONOUS DRAM MODULE DESCRIPTION The THMY51E10C is a 67,108,864-word by 72-bit synchronous dynamic RAM module consisting of 18 TC59SM804CFT DRAMs and PLL/Registers on a printed circuit board.	OCR Scan	PDF	THMY51E10C70 THMY51E10C70, THMY51E10C75, THMY51E10C80 864-word 72-bit TC59SM804CFT D018 D019 D032
Intel 1103 DRAM Abstract: D03B intel 1103 ram D018 D019 D032 Text: TOSHIBA THMY6432G1EG-80 TENTATIVE TOSHIBA HYBRID DIGITAL INTEGRATED CIRCUIT 33,554,432-WORD BY 64-BIT SYNCHRONOUS D RAM MODULE DESCRIPTION The THMY6416E1BEG is a 33,554,432-word by 64-bit synchronous dynamic RAM module consisting of 16 TC59SM708FT DRAMs and an unbuffer on a printed circuit board.	OCR Scan	PDF	Y6432G1EG-80 432-WORD 64-BIT THMY6416E1BEG TC59SM708FT 64-bit Intel 1103 DRAM D03B intel 1103 ram D018 D019 D032
D018 Abstract: D019 D032 D051 THMY51E10B70 Text: T O S H IB A THMY51E10B70,75,80 TOSHIBA HYBRID DIGITAL INTEGRATED CIRCUIT TENTATIVE 67,108,864-WORD BY 72-BIT SYNCHRONOUS DRAM MODULE DESCRIPTION The THMY51E10B is a 67,108,864-word by 72-bit synchronous dynamic RAM module consisting of 18 TC59SM804BFT DRAMs and PLL/Registers on a printed circuit board.	OCR Scan	PDF	THMY51E10B70 864-WORD 72-BIT THMY51E10B TC59SM804BFT 72-bit aY51E10B70 D018 D019 D032 D051
Untitled Abstract: No abstract text available Text: TO SH IB A THLY648031 BFG-80,-80L,-10,-10L TENTATIVE TOSHIBA HYBRID DIGITAL INTEGRATED CIRCUIT 8,388,608-WORD BY 64-BIT SYNCHRONOUS DRAM MODULE DESCRIPTION The THLY648031BFG is a 8,388,608-word by 64-bit synchronous dynamic RAM module consisting of eight TC59S6408BFT/BFTL DRAMs on a printed circuit board.	OCR Scan	PDF	THLY648031 608-WORD 64-BIT THLY648031BFG TC59S6408BFT/BFTL 144-pin
Untitled Abstract: No abstract text available Text: TOSHIBA THMY721661 BEG-80,-10 TENTATIVE TOSHIBA HYBRID DIGITAL INTEGRATED CIRCUIT 16,777,216-WORD BY 72-BIT SYNCHRONOUS DRAM MODULE DESCRIPTION The THMY721661BEG is a 16,777,216-word by 72-bit synchronous dynamic RAM module consisting of 18 TC59S6408BFT/BFTL DRAMs and an unbuffer on a printed circuit board.	OCR Scan	PDF	THMY721661 BEG-80 216-WORD 72-BIT THMY721661BEG TC59S6408BFT/BFTL 72-bit
Untitled Abstract: No abstract text available Text: TOSHIBA THMY6480F1 BEG-80 TENTATIVE TOSHIBA HYBRID DIGITAL INTEGRATED CIRCUIT 8,388,608-WORD BY 64-BIT SYNCHRONOUS DRAM MODULE DESCRIPTION The THMY6480F1BEG is a 8,388,608-word by 64-bit synchronous dynamic RAM module consisting of eight TC59S6408BFT DRAMs and an unbuffer on a printed circuit board.	OCR Scan	PDF	THMY6480F1 BEG-80 608-WORD 64-BIT THMY6480F1BEG TC59S6408BFT 64-bit
HD15303 Abstract: No abstract text available Text: HD 153035F 56-Mbps Data Channel Processor # H ITA CH I _ Under Development Description The HD153035F is a 56 Mbps 1-7 ENDEC data separator with built-in read pulse detector, active filter, frequency synthesizer and synchronizer developed for use in magnetic disk drives.	OCR Scan	PDF	153035F 56-Mbps HD153035F 56Mbps. 84MHuctor HD15303
Untitled Abstract: No abstract text available Text: TOSHIBA THMY7280D1EG-80H TENTATIVE T O SH IB A H YBRID D IG ITA L IN TEG R A T ED CIRCU IT 8,388,608-W ORD BY 72-BIT SYNCHRONOUS DRAM M O DULE DESCRIPTION The THMY7280D1EG is a 8,388,608-word by 72-bit synchronous dynamic RAM module consisting of nine TC59S6408FT DRAMs and an unbuffer on a printed circuit board.	OCR Scan	PDF	THMY7280D1EG-80H 72-BIT THMY7280D1EG 608-word TC59S6408FT 72-bit

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D045 Search Results

D045 Result Highlights (1)

D045 Price and Stock

ROHM Semiconductor BV1HD045EFJ-CE2

Visual Communications Company VBL3D0450C

Samtec Inc FFSD-17-D-04.50-01-N

Samtec Inc FFSD-22-D-04.50-01-N

Samtec Inc IDSD-32-D-04.50-G

D045 Datasheets Context Search

18f24k22

AD5450

ADM6316AY27ARJZ-R7

pin diagram of PIC18f45k22

ADR430

bby36

TPI80

BFQ254

BFR96

Untitled

SOT-173

Untitled

2269H

TCK-1000

Untitled

transistor BFR91

D018

Intel 1103 DRAM

D018

Untitled

Untitled

Untitled

HD15303

Untitled