D03DB Search Results

fccj

Abstract: BUK456-1000B TRANSISTOR na 44 B44 transistor
Contextual Info: N AUER PHILIPS/DISCRETE bTE D • bbS3T31 D03Db^S TT1 * A P X Philips Semiconductors Product Specification PowerMOS transistor GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic envelope. The device is intended for use in

Contextual Info: For Immediate Assistance, Contact Your Local Salesperson BURR - BROW N i INA115 1 Precision INSTRUMENTATION AMPLIFIER FEATURES DESCRIPTION • LOW OFFSET VOLTAGE: 50|iV max T h e IN A 1 15 is a low cost, general purpose instru m en ­ tation am plifier o ffering excellen t accuracy. Its versa­

mcm6830

Abstract: EXORCISER motorola M68MM01A 7642T MC68B54 transistor bf 175 motorola application note 6809 6844 MMS1117 EXORCISER motorola M68MM01A2
Contextual Info: The MS800MM0S Support Elem ents Other NMOS MPUs MC3870 ^ MICROCOMPUTER COMPONENTS CMOS MCUS/ICUS MC14S00B, MC141000/1206 Bipolar 4-Blt slice MPU Fam ilies M2900 TTL , M10800 (MECL) nm os Memories RAM, EPROM, ROM CMOS Memories RAM, ROM MEMORY PRODUCTS Bipoiar Memories

Contextual Info: KM416V1000BT CMOS D R A M ELECTRONICS 1M x16B it CMOS Dynamic RAM with Fast Page Mode DESCRIPTION This is a family of 1,048,576 x16 bit Fast Page Mode CMOS DRAMs. Fast Page Mode offers high speed random access of memory cells within the same row. Power supply voltage +5.0V or +3.3V , refresh

Contextual Info: ADV MI CRO MEMORY 4ÛE D • 0257520 QGBOtn 3 ■AMD4 1 -4 6 -1 3 -2 5 Am27X020 : Megabit (262,144 x 8-Bit) CMOS ExpressROM Device Advanced Micro Devices DISTINCTIVE CHARACTERISTICS ■ ■ ■ As an OTP EPROM alternative: - Factory optimized programming

SGS100D

Contextual Info: 3GE » m QD30bfl4 4 ^ _ ^ 3 3 - 3 > f Z 7 S G S -T H O M S O N ^ 7# SG S100DA020D " S G S-THOMSON NPN DARLINGTON POWER MODULE • POWER MODULE WITH INTERNAL ISOLA­ TION 2500V RMS ■ LOW Rth JUNCTION TO CASE ■ FREEWHELING DIODE ■ ADAPTED FOR HIGH POWER SWITCHING

C1000B

Abstract: I22S stt 300
Contextual Info: K M 4 1 6 V l O O O BT ELECTRONICS CMOS DRAM 1M x16B it CMOS Dynamic RAM with Fast Page Mode DESCRIPTION This is a family of 1,048,576 x16 bit Fast Page Mode CM OS DRAMs. Fast Page Mode offers high speed random access of memory cells within the same row. Power supply voltage +5.0V or +3.3V , refresh

Contextual Info: N AHER PHILIPS/DISCRETE bTE D ^53=531 0030b7D Philips Semiconductors Product Specification PowerMOS transistor GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic envelope. The device is intended for use in Switched Mode Power Supplies

Contextual Info: MITSUBISHI LSIs DRAM MODULE MH1M72CTJ-6.-7 FAST PAGE MODE 75497472-BIT(1048576-WORD BY 72-BIT)DYNAMIC RAM DESCRIPTION The MH1M72CTJ is 1048576-word x 7 2 -b it dynamic RAM module. This consists of eighteen industry standard 1M x 4 dynamic RAMs in TSOP and tw o industry standard input