D0304 Search Results
D0304 Price and Stock
GCT Semiconductor Inc 05-33-D-0304-A-4-06-4-TCABLE FFC/FPC 33POS 0.5MM 11" |
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05-33-D-0304-A-4-06-4-T | Bag | 474 | 1 |
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05-33-D-0304-A-4-06-4-T | Bulk | 499 | 1 |
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GCT Semiconductor Inc 05-40-D-0304-A-4-06-4-TCABLE FFC/FPC 40POS 0.5MM 11" |
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05-40-D-0304-A-4-06-4-T | Bag | 464 | 1 |
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05-40-D-0304-A-4-06-4-T | Bulk | 451 | 1 |
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05-40-D-0304-A-4-06-4-T | 500 |
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GCT Semiconductor Inc 05-06-D-0304-A-4-06-4-TCABLE FFC/FPC 6POS 0.5MM 11" |
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05-06-D-0304-A-4-06-4-T | Bag | 420 | 1 |
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05-06-D-0304-A-4-06-4-T | Bulk | 474 | 1 |
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GCT Semiconductor Inc 05-20-D-0304-A-4-06-4-TCABLE FFC/FPC 20POS 0.5MM 11" |
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05-20-D-0304-A-4-06-4-T | Bag | 404 | 1 |
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05-20-D-0304-A-4-06-4-T | Bulk | 487 | 1 |
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GCT Semiconductor Inc 05-12-D-0304-A-4-06-4-TCABLE FFC/FPC 12POS 0.5MM |
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05-12-D-0304-A-4-06-4-T | Bag | 376 | 1 |
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05-12-D-0304-A-4-06-4-T | Bulk | 451 | 1 |
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D0304 Datasheets Context Search
Catalog Datasheet | Type | Document Tags | |
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BLRM
Abstract: TRANSISTOR FS 10 TM
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OCR Scan |
bb53T31 D03041fl BUK105-50L/S BUK105-50LP/SP BUK105-50US lPS/lPS25 BLRM TRANSISTOR FS 10 TM | |
BUK436-1000BContextual Info: N AMER P H I L I P S / D I S C R E T E b'ìE D • ^53*131 D03047S Philips Semiconductors PowerMOS transistor GENERAL DESCRIPTION N-channel enhancement mode f ield-effect power transistor in a plastic envelope. The device is intended tor use in Switched Mode Power Supplies |
OCR Scan |
bb53R31 D03047S BUK436-1000B BUK436-1000B | |
Contextual Info: TOSHIBA TMP90CM36/M37 7 6 IE3 IE2 5 4 i i IECAP IE0 R /W 1: Fu nction Enable 0: o R ead / W rite Resetting va lu e : IETPG1 ; 2 IETPG0 3 : IEAD IE1 o FFE3H bit Sym bol o INTEO Disable T 7 7 INTE1 (FFE4H) 6 - R ead / W rite - - - - R ese ttin g va lu e 5 |
OCR Scan |
TMP90CM36/M37 P38CR MCU90-48 | |
ASTM B355
Abstract: rom1 flux
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SO175-1-01 SO1751R SO175-2-01 SO1752R SO175-3-01 SO1753R SO175-4-01 SO1754R SO175-5-01 SO1755R ASTM B355 rom1 flux | |
Contextual Info: N AUER PHILIPS/DISCRETE bRE D bb53R31 003040? flTfl M A R X Product Specification Philips Semiconductors BUK104-50L/S BUK104-50LP/SP PowerMOS transistor Logic level TOPFET_ DESCRIPTION Monolithic temperature and overloadprotected logic level power MOSFET in a 5 pin plastic |
OCR Scan |
bb53R31 BUK104-50L/S BUK104-50LP/SP | |
D0304
Abstract: T-46
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OCR Scan |
02S7S2Ã 003D4S3 T-46-13-29 Am27C1024 16-Bit) 40-pin 0D304L 06780-009E D0304 T-46 | |
ESM5045DF
Abstract: ESM5045DV D0304
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OCR Scan |
ESM5045DF ESM5045DV T-91-20 O-240) D0304 | |
LQFP64
Abstract: XE88LC05MI028 XE88LCXX XE88LC05AMI028 7812 voltage regulator, block diagram nec xe88lc05ami
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XE88LC05/05A XE88LC05A 300uA D0304-40 LQFP64 XE88LC05MI028 XE88LCXX XE88LC05AMI028 7812 voltage regulator, block diagram nec xe88lc05ami | |
d0415
Abstract: transistor D1303 D1309 D0902 D09-15
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BD9271KUT BD9271KUT d0415 transistor D1303 D1309 D0902 D09-15 | |
Contextual Info: MITSUBISHI LSIs DRAM MODULE MH1 M325CXJ-5,-6,-7/ MH1 M325CNXJ-5,-6,-7 HYPER PAGE MODE 33554432-BIT (1048576-WQRD BY 32-BIT) DYNAMIC RAM DESCRIPTION PIN CONFIGURATION (TOP VIEW) [Single side] The MH1 M325CXJ/CNXJ is 1048576-word x 32-bit dynamic RAM. This consists of two |
OCR Scan |
M325CXJ-5 M325CNXJ-5 33554432-BIT 1048576-WQRD 32-BIT) M325CXJ/CNXJ 1048576-word 32-bit MH1M325CXJ/CNXJ-5 MH1M325CXJ/CNXJ-24T025 | |
OPA2658Contextual Info: Or, Call Customer Service at 1-800-548-6132 USA Only OPA265Q ] Q Dual Wideband, Low Power Voltage Feedback OPERATIONAL AMPLIFIER FEATURES DESCRIPTION • LOW POWER: 50mW/Amp The OPA2650 is a dual, low power, wideband voltage feedback operational amplifier. It features a high band |
OCR Scan |
OPA265Q 50mW/Amp OPA2650 360MHz 12-bit 360MHz 17313bS OPA2658 | |
ZD 607Contextual Info: Bx Notebook System Frequency Synthesizer Features PCI_F, PCI1:5 Output to Output Skew:. 500 ps • Maximized EMI suppression using Cypress’s Spread Spectrum Technology • Two copies of CPU output • Six copies of PCI output Synchronous w/CPU output |
OCR Scan |
48-MHz 24-/48-MHz 318-MHz 100-MHz 66-MHz G03G447 7096U ZD 607 | |
Contextual Info: TO SH IBA TC74VHC20 F/FN/FS/FT TOSHIBA CMOS DIGITAL INTEGRATED CIRCUIT SILICON MONOLITHIC TC74VHC20F, TC74VHC20FN, TC74VHC20FS, TC74VHC20FT DUAL 4 -INPUT NAND GATE The TC74VHC20 is an advanced high speed CMOS 4-INPUT NAND GATE fabricated with silicon gate C2MOS technology. |
OCR Scan |
TC74VHC20 TC74VHC20F, TC74VHC20FN, TC74VHC20FS, TC74VHC20FT TC74VH 14PIN 200mil OP14-P-300-1 | |
Contextual Info: bRE D N AMER PH ILIP S /D IS C R E TE • bb53R31 00304bQ Rlfl ■ P hilips Sem ico nd uctors Pro d uct Specification PowerMOS transistor GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic envelope. The device is intended for use in |
OCR Scan |
bb53R31 00304bQ BUK436-100A/B BUK436 -100A -100B 0Q304b4 | |
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BD92
Abstract: D1309 D0811 transistor d1412 ch9i transistor d1202 M/TRANSISTOR d1505
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BD9271KUT BD9271KUT BD92 D1309 D0811 transistor d1412 ch9i transistor d1202 M/TRANSISTOR d1505 | |
Contextual Info: KM4 1 6C2 5 4 DT CMOS D R AM ELECTRONICS 256K x 16 Bit CMOS Dynamic RAM with Extended Data Out DESCRIPTION This is a family of 262,144 x 16 bit Extended Data Out CMOS DRAMs. Extended Data Out offers high speed random access of memory cells within the same row. Power supply voltage +5.0V or +3.3V , |
OCR Scan |
256Kx16 KM416C254DT 00304flb | |
k4368
Abstract: BUK436-800A BUK436-800B K43680
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OCR Scan |
K436-800A/B BUK436 -800A -800B k4368 BUK436-800A BUK436-800B K43680 | |
b0407
Abstract: B0405 b0806 D08030 B0803 d0403 B0805 b0404 f030 B04030
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W19R-D04060. W14R-D0403 C06060 C08020 C08030 C08040 D03040 D03050 D03060 D03070 b0407 B0405 b0806 D08030 B0803 d0403 B0805 b0404 f030 B04030 | |
qml-38535
Abstract: LMC6064 LMC660 LPC660
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OCR Scan |
LMC6064AMJ/883 qml-38535 LMC6064 LMC660 LPC660 | |
KM416C254DJ-7
Abstract: C254D VL 7143
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OCR Scan |
6C254D 256Kx 256Kx16 T7JSDT27W nraEEES55BM5 KM416C254DJ 003045b KM416C254DJ-7 C254D VL 7143 | |
C1204BContextual Info: KM416C1204BT ELECTRONICS CMOS DRAM 1 M x 1 6 B i t C M O S Dynamic H A M with Extended Data Out DESCRIPTION This is a family of 1,048,576 x16 bit Extended Data Out CMOS DRAMs. Dxtended Data Out mod offers high speed random access of memory cells within the same row, so called Hyper Page Mode. Power |
OCR Scan |
KM416C1204BT 16Bit 1Mx16 03042b C1204B | |
Contextual Info: N AMER PHILIPS/DISCRETE b^E D bb53R31 003D3^a TbS « A P X Product Specification Philips Sem iconductors PowerMOS transistor TOPFET D E SC R IP TIO N Monolithic tem perature and overload protected pow er M O SFET in a 3 pin plastic envelope, intended as a general purpose switch for |
OCR Scan |
bb53R31 003D3 BUK102-50GS 2-50G | |
Contextual Info: Interrupt Controller SW I instruction NMI INTWD Interrupt enable/disable D Q CLR Interrupt request fl ip flop INTO r e c J] Q ü ' R "C>^Dn ~r □ fD UJ Lu -J ru -c Interrupt vector V read Interrupt request V d e ar interrupt request flip flop read V = 28H |
OCR Scan |
MCU90-29 | |
XE88LC05AM
Abstract: XE88LC05AMI LQFP64 XE88LC05MI028 gd2v
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XE88LC05/05A XE88LC05A 300uA D0304-40 XE88LC05AM XE88LC05AMI LQFP64 XE88LC05MI028 gd2v |