ASTM B355
Abstract: rom1 flux
Text: SPECIFICATION CONTROL DRAWING Product Revision Product Name Ident. Code SO175-1-01 A SO1751R SO175-2-01 A SO1752R SO175-3-01 A SO1753R SO175-4-01 A SO1754R SO175-5-01 A SO1755R Product Dimensions øB øC L±1.75 min min L±0.070 16.50 1.90 2.67 (0.650) (0.075)
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SO175-1-01
SO1751R
SO175-2-01
SO1752R
SO175-3-01
SO1753R
SO175-4-01
SO1754R
SO175-5-01
SO1755R
ASTM B355
rom1 flux
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LQFP64
Abstract: XE88LC05MI028 XE88LCXX XE88LC05AMI028 7812 voltage regulator, block diagram nec xe88lc05ami
Text: Datasheet XE88LC05/05A Sensing Machine Data Acquisition MCU with Zooming ADC and DACs XE88LC05/05A Sensing Machine Data Acquisition with 16+10 bit ZoomingADC and buffered 16 and 8 bit DACs General Description Key product Features The XE88LC05A is a data acquisition ultra lowpower low-voltage system on a chip SoC with a
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XE88LC05/05A
XE88LC05A
300uA
D0304-40
LQFP64
XE88LC05MI028
XE88LCXX
XE88LC05AMI028
7812 voltage regulator, block diagram nec
xe88lc05ami
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d0415
Abstract: transistor D1303 D1309 D0902 D09-15
Text: Datasheet LED Drivers for LCD Backlights White LED Diver for Backlight of Medium/Large-sized LCDs BD9271KUT General Description BD9271KUT is a white LED diver used on backlight of Medium/Large-sized LCDs. This IC can achieve dimming function by SPI control. And through the SPI
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BD9271KUT
BD9271KUT
d0415
transistor D1303
D1309
D0902
D09-15
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BD92
Abstract: D1309 D0811 transistor d1412 ch9i transistor d1202 M/TRANSISTOR d1505
Text: Datasheet LED Drivers for LCD Backlights White LED Diver for Backlight of Medium/Large-sized LCDs BD9271KUT General Description BD9271KUT is a white LED diver used on backlight of Medium/Large-sized LCDs. This IC can achieve dimming function by SPI control. And through the SPI
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BD9271KUT
BD9271KUT
BD92
D1309
D0811
transistor d1412
ch9i
transistor d1202
M/TRANSISTOR d1505
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b0407
Abstract: B0405 b0806 D08030 B0803 d0403 B0805 b0404 f030 B04030
Text: 7P Retrieve Reels Reels for Retrieving: EXAMPLES: A moving car is to travel 55 feet. Required cable is 4 Conductor/No. 10. Extra cables needed to hook up to the car is 2 feet. The following EXAMPLES appear in bold type in the selection charts. 1. If the reel must be END MOUNTED, the required cable length
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W19R-D04060.
W14R-D0403
C06060
C08020
C08030
C08040
D03040
D03050
D03060
D03070
b0407
B0405
b0806
D08030
B0803
d0403
B0805
b0404
f030
B04030
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XE88LC05AM
Abstract: XE88LC05AMI LQFP64 XE88LC05MI028 gd2v
Text: Datasheet XE88LC05/05A Sensing Machine Data Acquisition MCU with Zooming ADC and DACs XE88LC05/05A Sensing Machine Data Acquisition with 16+10 bit ZoomingADC and buffered 16 and 8 bit DACs General Description Key product Features The XE88LC05A is a data acquisition ultra lowpower low-voltage system on a chip SoC with a
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XE88LC05/05A
XE88LC05A
300uA
D0304-40
XE88LC05AM
XE88LC05AMI
LQFP64
XE88LC05MI028
gd2v
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BLRM
Abstract: TRANSISTOR FS 10 TM
Text: N AMER PHILIPS/DISCRETE bb53T31 D03041fl bfi3 * A P X bRE D Product Specification Philips Semiconductors PowerMOS transistor BUK105-50L/S Logic level TOPFET_ BUK105-50LP/SP DESCRIPTION Monolithic temperature and overload protected logic level power
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bb53T31
D03041fl
BUK105-50L/S
BUK105-50LP/SP
BUK105-50US
lPS/lPS25
BLRM
TRANSISTOR FS 10 TM
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BUK436-1000B
Abstract: No abstract text available
Text: N AMER P H I L I P S / D I S C R E T E b'ìE D • ^53*131 D03047S Philips Semiconductors PowerMOS transistor GENERAL DESCRIPTION N-channel enhancement mode f ield-effect power transistor in a plastic envelope. The device is intended tor use in Switched Mode Power Supplies
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bb53R31
D03047S
BUK436-1000B
BUK436-1000B
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Untitled
Abstract: No abstract text available
Text: TOSHIBA TMP90CM36/M37 7 6 IE3 IE2 5 4 i i IECAP IE0 R /W 1: Fu nction Enable 0: o R ead / W rite Resetting va lu e : IETPG1 ; 2 IETPG0 3 : IEAD IE1 o FFE3H bit Sym bol o INTEO Disable T 7 7 INTE1 (FFE4H) 6 - R ead / W rite - - - - R ese ttin g va lu e 5
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TMP90CM36/M37
P38CR
MCU90-48
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Untitled
Abstract: No abstract text available
Text: N AUER PHILIPS/DISCRETE bRE D bb53R31 003040? flTfl M A R X Product Specification Philips Semiconductors BUK104-50L/S BUK104-50LP/SP PowerMOS transistor Logic level TOPFET_ DESCRIPTION Monolithic temperature and overloadprotected logic level power MOSFET in a 5 pin plastic
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bb53R31
BUK104-50L/S
BUK104-50LP/SP
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D0304
Abstract: T-46
Text: ADV MI CRO MEMORY 4ÖE 02S7S2Ö J> 003D4S3 h • AMD4 T - 46-13-29 Advanced Micro Devices A m 2 7 C 1 0 2 4 1 Megabit (65,536 x 16-Bit) CMOS EPROM DISTINCTIVE CHARACTERISTICS ■ High Speed Flashrite programming ■ Fast access tim e — 100 ns ■ Low power consumption:
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02S7S2Ã
003D4S3
T-46-13-29
Am27C1024
16-Bit)
40-pin
0D304L
06780-009E
D0304
T-46
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ESM5045DF
Abstract: ESM5045DV D0304
Text: 30E D • 7 e1S c]237 D G 3 Q 4 bE fl ESM5045DF ESM5045DV SGS-THOMSON lILGiÜir^PMQOS ._ S 6 S-THOMSON 'T ^ '3 - 3 ^ NPN DARLINGTON POWER MODULE ■ HIGH CURRENT POWER BIPOLAR MODULE ■ VERY LOW Rth JUNCTION CASE ■ SPECIFIED ACCIDENTAL OVERLOAD AREAS . ULTRAFAST FREEWHEELING DIODE
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ESM5045DF
ESM5045DV
T-91-20
O-240)
D0304
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Untitled
Abstract: No abstract text available
Text: MITSUBISHI LSIs DRAM MODULE MH1 M325CXJ-5,-6,-7/ MH1 M325CNXJ-5,-6,-7 HYPER PAGE MODE 33554432-BIT (1048576-WQRD BY 32-BIT) DYNAMIC RAM DESCRIPTION PIN CONFIGURATION (TOP VIEW) [Single side] The MH1 M325CXJ/CNXJ is 1048576-word x 32-bit dynamic RAM. This consists of two
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M325CXJ-5
M325CNXJ-5
33554432-BIT
1048576-WQRD
32-BIT)
M325CXJ/CNXJ
1048576-word
32-bit
MH1M325CXJ/CNXJ-5
MH1M325CXJ/CNXJ-24T025
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OPA2658
Abstract: No abstract text available
Text: Or, Call Customer Service at 1-800-548-6132 USA Only OPA265Q ] Q Dual Wideband, Low Power Voltage Feedback OPERATIONAL AMPLIFIER FEATURES DESCRIPTION • LOW POWER: 50mW/Amp The OPA2650 is a dual, low power, wideband voltage feedback operational amplifier. It features a high band
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OPA265Q
50mW/Amp
OPA2650
360MHz
12-bit
360MHz
17313bS
OPA2658
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Untitled
Abstract: No abstract text available
Text: TO SH IBA TC74VHC20 F/FN/FS/FT TOSHIBA CMOS DIGITAL INTEGRATED CIRCUIT SILICON MONOLITHIC TC74VHC20F, TC74VHC20FN, TC74VHC20FS, TC74VHC20FT DUAL 4 -INPUT NAND GATE The TC74VHC20 is an advanced high speed CMOS 4-INPUT NAND GATE fabricated with silicon gate C2MOS technology.
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TC74VHC20
TC74VHC20F,
TC74VHC20FN,
TC74VHC20FS,
TC74VHC20FT
TC74VH
14PIN
200mil
OP14-P-300-1
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Untitled
Abstract: No abstract text available
Text: bRE D N AMER PH ILIP S /D IS C R E TE • bb53R31 00304bQ Rlfl ■ P hilips Sem ico nd uctors Pro d uct Specification PowerMOS transistor GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic envelope. The device is intended for use in
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bb53R31
00304bQ
BUK436-100A/B
BUK436
-100A
-100B
0Q304b4
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ee1625
Abstract: C254D 3D47T
Text: KM416C254DT ELECTRONICS CMOS DRAM 2 5 6 K x 1 6 B i t CMOS Dynamic RAM with Extended Data Out DESCRIPTION This is a family of 262,144 x 16 bit Extended Data Out CMOS DRAMs. Extended Data Out offers high speed random access of memory cells within the same row. Power supply voltage +5.0V or +3.3V ,
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KM416C254DT
256Kx
256Kx16
003040b
ee1625
C254D
3D47T
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Untitled
Abstract: No abstract text available
Text: KM4 1 6C2 5 4 DT CMOS D R AM ELECTRONICS 256K x 16 Bit CMOS Dynamic RAM with Extended Data Out DESCRIPTION This is a family of 262,144 x 16 bit Extended Data Out CMOS DRAMs. Extended Data Out offers high speed random access of memory cells within the same row. Power supply voltage +5.0V or +3.3V ,
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256Kx16
KM416C254DT
00304flb
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k4368
Abstract: BUK436-800A BUK436-800B K43680
Text: N AMFR PHILIPS/DISCRETE b TE J> • bbsa^ai 0Q3Ü47Ü BU K436-800A/B PowerMOS transistor GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic envelope. The device is intended lor use in Switched Mode Power Supplies SMPS , motor control, welding,
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K436-800A/B
BUK436
-800A
-800B
k4368
BUK436-800A
BUK436-800B
K43680
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qml-38535
Abstract: LMC6064 LMC660 LPC660
Text: REVISIONS LTR DESCRIPTION DATE YR-MO-DA APPROVED A Add device type 03. Make changes to 1.2.2, 1.3, table I, and bulletin sheet. 93-06-28 M. A. Frye B Make change to the large signal voltage test, A VQL in table I. Update boilerplate, -rrp 97-09-03 R . Monnin
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LMC6064AMJ/883
qml-38535
LMC6064
LMC660
LPC660
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KM416C254DJ-7
Abstract: C254D VL 7143
Text: KM4 1 6 C 2 5 4 D J ELECTRONICS CMOS DRAM 256K x 16 Bit CMOS Dynamic RAM with Extended Data Out DESCRIPTION This is a family of 262,144 x 16 bit Extended Data Out CMOS DRAMs. Extended Data Out offers high speed random access of memory cells within the same row. Power supply voltage +5.0V or +3.3V ,
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6C254D
256Kx
256Kx16
T7JSDT27W
nraEEES55BM5
KM416C254DJ
003045b
KM416C254DJ-7
C254D
VL 7143
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C1204B
Abstract: No abstract text available
Text: KM416C1204BT ELECTRONICS CMOS DRAM 1 M x 1 6 B i t C M O S Dynamic H A M with Extended Data Out DESCRIPTION This is a family of 1,048,576 x16 bit Extended Data Out CMOS DRAMs. Dxtended Data Out mod offers high speed random access of memory cells within the same row, so called Hyper Page Mode. Power
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KM416C1204BT
16Bit
1Mx16
03042b
C1204B
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Untitled
Abstract: No abstract text available
Text: N AMER PHILIPS/DISCRETE b^E D bb53R31 003D3^a TbS « A P X Product Specification Philips Sem iconductors PowerMOS transistor TOPFET D E SC R IP TIO N Monolithic tem perature and overload protected pow er M O SFET in a 3 pin plastic envelope, intended as a general purpose switch for
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bb53R31
003D3
BUK102-50GS
2-50G
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Untitled
Abstract: No abstract text available
Text: Interrupt Controller SW I instruction NMI INTWD Interrupt enable/disable D Q CLR Interrupt request fl ip flop INTO r e c J] Q ü ' R "C>^Dn ~r □ fD UJ Lu -J ru -c Interrupt vector V read Interrupt request V d e ar interrupt request flip flop read V = 28H
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MCU90-29
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