D02B2 Search Results

IA35

Abstract: CDM62256
Contextual Info: HA RR IS S E M I C O N D S E C T O R m 3 7 ^ ] M 3 0 5 27 1 D02b2S3 T BiHAS High-Reliability CMOS LSI — CDM 62256C/3 Advance Information - Wl High-Reliability CMOS 32,768-Word By 8-Bit LSI Static RAM

Contextual Info: N E C ELECTRONICS INC 3QE 0 b 427525 D02b2flb 7 • jjPD7832x Advanced 8/16-Bit, Real Time Control Microcomputer With A/D Converter NEC NEC Electronics Inc. ■ _ T - f r i - n - we Description TTie juPD7832x 78320,78322 is a single-chip microcom­

Contextual Info: N AUER PHILIPS/DISCRETE L IE bbS3^31 D02b230 ‘IbM D APX BAS45L A LOW LEAKAGE DIODE FOR SURFACE MOUNTING The B A S 4 5 L is a switching diode with a very low reverse current. This S M diode is a leadless diode in a hermetically sealed SO D -8 0 envelope with lead/tin-plated metal

Contextual Info: HARRIS S E MI C O N D SECTOR 37E J> m - 4302271 D02b24b 5 HHAS High-Reliabilily CMOS LSI Devices CDM6264BC/3 Advance Information Hlgh-Rellability CMOS 8192-Word By 8-Blt LSI Static RAM

BU506D

Abstract: BU506 EB251
Contextual Info: I I N AMER PHILIPS/DISCRETE b TE D • bbSBTBl D02B251 A 473 * A P X BU506 BU506D SILICON DIFFUSED POWER TRANSISTORS High-voltage, high-speed switching npn transistor in a plastic envelope intended for use in horizontal deflection circuits o f colour television receivers and fo r line operated switch-mode applications.

Contextual Info: B U R R -B R O W N [ OPA26Q4 1 Dual FET-lnput, Low Distortion OPERATIONAL AMPLIFIER FEATURES APPLICATIONS • • • • • • • • • • • • • LOW DISTORTION: 0.0003% at 1kHz LOW NOISE: 10nVWRz HIGH SLEW RATE: 25V/|IS WIDE GAIN-BANDWIDTH: 20MHz

Contextual Info: H M 5 1 4 1 O O C /C L S e r i e s Preliminary 4,194,304-word x 1-bit Dynamic Random Access Memory HITACHI T he H ita c h i H M 514100C is a CM OS dynam ic R A M o rg a n iz e d 4 ,1 9 4 ,3 0 4 w o rds x 1 b its . HM 514100C has realized higher density, higher

Contextual Info: MITSUBISHI MICROCOMPUTERS M 37702M 4LXXXGP SINGLE-CHIP 16-BIT CMOS MICROCOMPUTER DESCRIPTION • W id e op erating te m p e ra tu re ra n g e . — 4 0 ~ 8 5 ‘C m icro­ • In te rru p ts . •.

Contextual Info: Philips S em iconductors • b b S B IB l DQ EbS7T 77A M APX Prelim inary specification BAT81/82/83 Schottky barrier diodes N AH ER P H I L I P S / D I S C R E T E DESCRIPTION General purpose and switching Schottky barrier diodes in a SOD68 envelope, with an integrated

SE050A

Contextual Info: AT&T Preliminary Data Sheet SE050A Power Module; 48 Vdc Input, 5 Vdc Output, 50 W Features • Small size: 2.30 in. x 3.35 in. x 0.75 in. ■ Output current limiting; unlimited duration ■ Output overvoltage clamp: V0 < 7 V ■ Complete input and output filtering

lexan 940

Abstract: C2800-701 A04A BAR 63 lexan 500 mechanical thermal engineering database Pentium D 940 D08A zytel NYLON SHARP I A05
Contextual Info: Mechanical Support Components for S.E.C. Cartridge Processors July 1997 Order Number: 243429-001 Information in this document is provided in connection with Intel products. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document. Except

BFS21

Abstract: BFS21A SOT52 PHILIPS 1980
Contextual Info: Il PHILIPS INTERNATIONAL 41E D • . 7110fl2Li Q05bE3cl ô HiPHIN MATCHED N-CHANNEL FETS Matched pair o f symmetrical n-channei silicon planar epitaxial junction field-effect transistors in TO-72 metal envelopes, mounted together in a metal S-clip.

Contextual Info: TOSHIBA TC55257CPI/CF1/CSPI/CFT1/CTRI-85/10 PRELIMINARY SILICON GATE CMOS 32,768 WORD x 8 BIT STATIC RAM Description The TC55257CPI is a 262,144 bit CMOS static random access memory organized as 32,768 words by 8 bits and operated from a single 5V power supply. Advanced circuit techniques provide both high speed and low power features with an operating current of

creative sound blaster 5.1 circuit diagram

Abstract: 24C02 w6 OPL2 RWA032
Contextual Info: 41^ R o c k w e l l S em iconductor S ystem s WaveArtist 100, WaveArtist™ 200, and WaveArtist™ 300 Audio System Devices _ Introduction Features The Rockwell WaveArtist™ 100 RWA100 , WaveArtist™ 200 (RWA200) and WaveArtist™ 300 (RWA300) are

S1RB

Abstract: Philips MARKING CODE a91
Contextual Info: D bbS3T31 □□Eb2DE TTT H A P X BAS17 N AMER PHIL IPS/DISCRETE_ J V LOW VOLTAGE STABISTOR Silicon planar epitaxial diode in SOT-23 envelope. This diode is intended fo r low voltage stabilizing e.g. bias stabilizer in class-B ou tput stages, clipping, clamping and meter protection.

HM514100

Abstract: HM514100BS
Contextual Info: HM5141OOB/BL Series 4,1 9 4 ,3 0 4 -w o rd x 1-b it D y n a m ic R a nd o m A c c e s s M em ory The Hitachi HM514100B is a CMOS dynamic RAM o rganized 4 ,1 9 4 ,3 0 4 w ords x 1 bits. HM514100B has realized higher density, higher performance and various functions by employing

Contextual Info: K S 5 7C 2016 4-BIT CMOS Microcontroller ELECTRONICS Product Specification OVERVIEW The KS57C2016 single-chip CMOS microcontroller is designed for very high performance using Samsung's newest 4-bit CPU core. With an up-to-20-digit LCD direct drive capability and up to 40 pins for LCD segment data

Contextual Info: N AUER PHILIPS/DISCRETE b'iE D • bbSBTBl D0Eb2Eb 433 BAS45 LOW LEAKAGE DIODE Switching diode with a very low reverse current, encapsulated in a subminiature glass DO-34 envelope. QUICK REFERENCE DATA Continuous reverse voltage vR max. 125 V Forward voltage

cfl circuit diagram

Abstract: TC55257CFL TC55257CFTL TC55257CPL TC55257CSPL TC55257CTRL
Contextual Info: TOSHIBA TC55257CPL/CFI/CSPL/CFIiycrRL-70/85/10 PRELIMINARY SILICON GATE CMOS 32,768 WORD x 8 BIT STATIC RAM Description The T C 5 5 2 5 7 C P L is a 2 6 2 ,1 4 4 bit C M O S static random access m em ory organized as 3 2 ,7 6 8 w o rd s by 8 bits and operated from

Contextual Info: MITSUBISHI LSIs DRAM MODULE MH25632XJ-7.-8/ MH25632SXJ-7,-8 FAST PAGE MODE 83886Û8-BIT(262144-W0RD BY 32-BIT)DYNAMIC RAM DESCRIPTION WH25632XJ/SXJ is 2 6 2 14 4 -word by 3 2 -b it dynamic RAM module. This consists o f tw o industry standard 256K x 16bit

Contextual Info: MITSUBISHI ICs LSI M64403FP p fV E V -V som P ERROR CORRECTION WITH VARIABLE LENGTH AND DISTANCE DESCRIPTION A P P L IC A T IO N The M 64403FP perform s the decoding fo r RS (Reed Solomon) DVD player, DVD-ROM (D V D :D igital V ideo Disc), DBS (Direct cod e w hich prim itive p o ly n o m ia l^ (X)=Xa+X*+X3+Xz+1 and its

Contextual Info: S i GE C P L E S S E Y ADVANCE INFORMATION S E M I C O N D U C T O R S MV1471 HDB3/AMI ENCODER/DECODER The MV1471, along with other devices in the GPS 2Mbit PCM signalling series comprise a group of circuits which will perform the common channel signalling and error detection

30N5F

Contextual Info: MITSUBISHI LSIs DRAM MODULE MH1 M09B0AJ-7,-8/ MH1 M09B0AJA-7,-8 FAST PAGE MODE 9437184-BIT(1048576-WORD BY 9-BIT)DYNAMIC RAM DESCRIPTION PIN CONFIGURATION (TOP VIEW) (Single side] The M H 1M 09B 0A J/JA is 1 0 4 8 5 7 6 -word x 9 - bit dynamic RAM. This consists of tw o industry standard 1M x 4 dynamic

timer circuit diagram

Abstract: KS57C0208
Contextual Info: KS57C0208 4-BIT CMOS Microcontroller ELECTRONICS Product Specification OVERVIEW The KS57C0208 single-chip CMOS microcontroller is for high performance using Samsung's newest 4-bit CPU core. With two 8-bit timer/counters, a watchdog timer, and sixteen n-channel open-drain I/O pins, the KS57C0208