AD8512
Abstract: ad8512arz AD8510ARM AD8513 AD8510
Text: Precision, Very Low Noise, Low Input Bias Current, Wide Bandwidth JFET Operational Amplifiers AD8510/AD8512/AD8513 –IN 2 AD8510 8 NC NULL 1 7 V+ –IN 2 TOP VIEW 6 OUT Not to Scale V– 4 5 NULL NC V+ TOP VIEW 6 OUT (Not to Scale) V– 4 5 NULL +IN 3 7
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AD8510/AD8512/AD8513
AD8510
AD8512
14-Lead
AD8512
ad8512arz
AD8510ARM
AD8513
AD8510
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Untitled
Abstract: No abstract text available
Text: 1 MHz to 2.7 GHz RF Gain Block AD8353 Data Sheet FUNCTIONAL BLOCK DIAGRAM Fixed gain of 20 dB Operational frequency of 1 MHz to 2.7 GHz Linear output power up to 9 dBm Input/output internally matched to 50 Ω Temperature and power supply stable Noise figure: 5.3 dB
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AD8353
AD8353
11-2013-B
AD8353ACPZ-REEL7
AD8353-EVALZ
D02721-0-12/13
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V956ME03
Abstract: No abstract text available
Text: PLL Frequency Synthesizer ADF4106 Data Sheet FEATURES GENERAL DESCRIPTION 6.0 GHz bandwidth 2.7 V to 3.3 V power supply Separate charge pump supply VP allows extended tuning voltage in 3 V systems Programmable dual-modulus prescaler 8/9, 16/17, 32/33, 64/65
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ADF4106
ADF4106
16-Lead
20-Lead
RU-16
V956ME03
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CNY17 Harris
Abstract: CNY17 III
Text: 3875081 G E S O L ID STATE 01E 19822 Optoelectronic Specifications _ T HARRIS SEMICOND SECTOR 37E D I - m - S 4305271 D0272Û4 4 * H A S Photon Coupled Isolator CN Y17 Ga As Infrared Emitting Diode & npn Silicon Photo - Transistor T h e G E Solid S tate CN Y17 consists o f a gallium arsenide infrared
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D0272
92CS-429S1
CNY17 Harris
CNY17 III
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AmPAL16R8
Abstract: 16H8 AmPAL16R4 16R4Q 16R8 8103613RX 16L8 16R4 16R6 electrical bra
Text: ADV MICRO PLA/PLE/ARRAY sT Î dË | . 0257SSL, D0272M2 T-46-13-47 ' AmPAL16R8 Fam ily 20-Pin IMOX"* Programmable Array Logic PAL Elements Distinctive Characteristics ! i r • AMD's superior IMOX technology - Guarantees tp o “ 1S ns Max. " B " Versions
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02S7SEb
00S75M2T
T-46-13-47
20-Pin
Ice13
0ES752L.
ks000010
025752t,
AmPAL16R8
16H8
AmPAL16R4
16R4Q
16R8
8103613RX
16L8
16R4
16R6
electrical bra
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Untitled
Abstract: No abstract text available
Text: 38 75 081 G E S O L I D ST A T E 0 1E 1 9 8 14 Optoelectronic Specifications_ HARRIS SEfllCOND SECTOR Light Detector 37E D • 430E271 D02727b S^IBHAS Planar Silicon Photo-Darlington Amplifier BPW38 T h e G E S o lid S ta te B PW 38 is a supersensitive N P N P la n a r S ilicon
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430E271
D02727b
BPW38
S-429S
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Untitled
Abstract: No abstract text available
Text: H A RR IS S E M I C O N D S E CT OR 37E D * 4 30 2 27 1 D0272D4 I HAS 2 Optoelectronic Specifications_ Photon Coupled Isolator H11K1, H11K2 G a As Infrared E m itting D iode & T w o N P N S ilicon P h o to -D a rlin g to n Amplifiers The OE Solid State H 11K series consists of a gallium arsenide, infrared emitting
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D0272D4
H11K1,
H11K2
92CS-42662
92CS-429S1
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Untitled
Abstract: No abstract text available
Text: 3875081 G E SOLID 0 1 E 19746 STATE D Optoelectronic S pecifications_ HARRIS SEtllCOND SECTOR 37E D I 4 30 2 2 7 1 D0272GÔ T • HAS Photon Coupled Isolator H11L1,H11L2, H11L3 Ga As Infrared E m ittin g D iode & M icroprocessor C om patible S c h m itt Trigger
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D0272GÃ
H11L1
H11L2,
H11L3
S-429S
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Untitled
Abstract: No abstract text available
Text: sì GEC PLESSEY OCTOBER 1996 S E M I C O N D U C T O R S D S 4287 - 2.3 ACE9020 RECEIVER AND TRANSMITTER INTERFACE Supersedes DS4287 - 1.0 in Communications 1C Handbook. HB4235 - 1.0, February 1996 ACE9020 is a VHFoscillator, up-converter and prescaler.
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ACE9020
DS4287
HB4235
ACE9020
ACE9010
ACE9030.
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HM514170CLJ8
Abstract: HM514170CLJ-8 HM514170CJ7
Text: HM514170C Series HM51S4170C Series 262,144-word x 16-bit Dynamic Random Access Memory HITACHI Rev. 1.0 Jul. 21, 1995 Description The Hitachi HM 51 S 4170C are CMOS dynamic RAM organized as 262,144-word x 16-bit. HM51(S)4170C have realized higher density, higher performance and various functions by employing 0.8 p.m CMOS process
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HM514170C
HM51S4170C
144-word
16-bit
4170C
16-bit.
4170C
HM514170CLJ8
HM514170CLJ-8
HM514170CJ7
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Untitled
Abstract: No abstract text available
Text: HM5118160BI Series 1048576-word x 16-bit Dynamic Random Access Memory HITACHI ADE-203-580A Z Rev. 1.0 May. 20, 1996 Description T he H itachi H M 5118160B I is a C M O S dynam ic R A M organized as 1,048,576-w ord x 16-bit. It em ploys the m ost advanced C M O S technology fo r high perform ance and low pow er. T he H M 5118160B I offers
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HM5118160BI
1048576-word
16-bit
ADE-203-580A
5118160B
576-w
16-bit.
ns/70
ns/80
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LF 3.3vOLT
Abstract: No abstract text available
Text: PRELIMINARY IDT72V255 IDT72V265 3.3 VOLT CMOS SUPERSYN C FIFO 8,192x18,16,384x18 Integrated Device Technology, Inc. • Output enable puts data outputs into high impedance • High-performance submicron CMOS technology • Industrial temperature range -40°C to +85°C is avail
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192x18
384x18
IDT72V255
IDT72V265
18-bit
IDT72V255)
IDT72V265)
492-M
PSC-4036
LF 3.3vOLT
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Untitled
Abstract: No abstract text available
Text: Bulletin 125175/B International S Rectifier ST223S SERIES Stud Version INVERTER GRADE THYRISTORS Features • All diffused design ■ Center amplifying gate ■ Guaranteed high dv/dt ■ Guaranteed high di/dt ■ High surge current capability ■ Low thermal impedance
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125175/B
ST223S
T223S
D-488
4A55452
00272b3
D-489
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RBS 2202
Abstract: BBS 2202 intel 80188 Lucent SLC 96 CI 4048 counter ami c21 SESCO MOTOROLA LSC SR12 SR14
Text: Preliminary Data Sheet June 1997 microelectronics group Lucent Technologies Bell Labs Innovations T7230A Primary Access Framer/Controller Features • Framing formats — DS1 extended superframe ESF — DS1 superframe (SF): D4; SLC^-96; T1DM DDS; T 1DM DDS with FDL access
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T7230A
RBS 2202
BBS 2202
intel 80188
Lucent SLC 96
CI 4048 counter
ami c21
SESCO
MOTOROLA LSC
SR12
SR14
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Z1132
Abstract: No abstract text available
Text: HM5118165B Series 1048576-word x 16-bit Dynamic Random Access Memory HITACHI ADE-203-000 Z Preliminary Rev. 1.0 Dec. 1, 1995 Description The Hitachi HM5118165B is a CMOS dynamic RAM organized as 1,048,576-word x 16-bit. It employs the most advanced CMOS technology for high performance and low power. The HM5118165B offers Extended
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HM5118165B
1048576-word
16-bit
ADE-203-000
576-word
16-bit.
ns/70
ns/80
Z1132
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Untitled
Abstract: No abstract text available
Text: B U R R -B R O W N « E IS0103 1 Low-Cost, Internally Powered ISOLATION AMPLIFIER FEATURES APPLICATIONS • SIGNAL AND POWER IN ONE DOUBLE-WIDE 0.6" SIDE-BRAZED PACKAGE • 5600Vpk TEST VOLTAGE • MULTICHANNEL ISOLATED DATA ACQUISITION • ISOLATED 4-20mA LOOP RECEIVER AND
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IS0103
5600Vpk
4-20mA
1500Vrms
20kHz
17313bS
ZZ231
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Untitled
Abstract: No abstract text available
Text: G F T PI FS^FY 5Ü X J SEPTEMBER 1996 t PRELIMINARY INFORMATION S E M I C O N D U C T O R S D.S. 44101.5 SL6679 DIRECT CONVERSION FSK DATA RECEIVER The SL6679 is an advanced Direct Conversion FSK Data Receiver for operation up to 450MHz. The device integrates
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SL6679
SL6679
450MHz.
37bfl55E
575m3
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Lucent dw025acl-m
Abstract: DW025ABK-M DW025
Text: Data Sheet June 1997 m i c r o e l e c t r o n i c s group Lucent Technologies Bell Labs Innovations DW025 Triple Output-Series Power Modules: 36 Vdc to 75 Vdc Input; 25 W Options • Short pins: 2.79 mm ± 0.25 mm 0.110 in.±0.010 in. ■ Negative logic remote on/off
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DW025
MHSTxxx45
MHSLxxx45
005002b
Lucent dw025acl-m
DW025ABK-M
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Untitled
Abstract: No abstract text available
Text: i i N AMER PHILIPS/DISCRETE b'lE D • bbS3^31 Q05723D 851 H A P X BT138F SERIES J V FULL-PACK TRIACS Glass-passivated 12 ampere triacs in SOT-186 envelopes, which feature an electrically isolated mounting base. They are intended fo r use in applications requiring high bidirectional transient and blocking
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Q05723D
BT138F
OT-186
BT138Fâ
D2733
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AmPAL23S8-30
Abstract: No abstract text available
Text: A DV MICRO PLA/PLE/ARRAYS , Tt. D e | 02S7S2t, 0 0 2 7 2 2 7 1 T -V 4 -/3 -V 7 AmPAL23S8 20-Pin IMOX PAL Device-Based Sequencer Distinctive C haracteristics • • • • • 14 Registers - 4 Output Logic Macrocells OLMs - 4 Output Registers - 6 Buried State Registers (BSRs)
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02S7S2t,
20-Pin
20-pin
33-MHz
extemal/40-MHz
AmPAL23S8-30
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TXXXXXXXXXX
Abstract: No abstract text available
Text: CMOS SUPERSYNC FIFO 16,384 x 9, 32,768 x 9 IDT72261 IDT72271 Integrated Device Technology, Inc. FEATURES: DESCRIPTION: • • • • • • The IDT72261/72271 are monolithic, CMOS, high capac ity, high speed, low power first-in, first-out FIFO memories
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IDT72261
IDT72271
IDT72261)
IDT72271)
492-M
IDT77105
25Mb/s
64-PIN
2S771
TXXXXXXXXXX
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triac bt139
Abstract: 800H BT139 T0220AB RJ28
Text: N AMER PHILIPS/DISCRETE b^E D • bbSSTSl 0D272fc>5 070 ■ APX Preliminaryspec Triac BT139 series H GENERAL DESCRIPTION QUICK REFERENCE DATA Glass passivated 16 A triacs intended for use in applications
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bb53131
0D27Bb5
BT139
T0220AB
BT139-
T0220AB;
T0220
triac bt139
800H
RJ28
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memory cats
Abstract: HM5118160B HM5118160BJ-6 HM5118160BJ-7 HM5118160BJ-8 HM5118160BLJ-6 HM5118160BLJ-7 HM5118160BLJ-8
Text: HM5118160B Series 1048576-word x 16-bit Dynamic Random Access Memory HITACHI ADE-203-476 Z Preliminary Rev. 0.0 Dec. 6, 1995 Description The Hitachi HM5118160B is a CMOS dynamic RAM organized as 1,048,576-word x 16-bit. It employs the most advanced CMOS technology for high performance and low power. The HM5118160B offers Fast Page
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HM5118160B
1048576-word
16-bit
ADE-203-476
576-word
16-bit.
ns/70
ns/80
memory cats
HM5118160BJ-6
HM5118160BJ-7
HM5118160BJ-8
HM5118160BLJ-6
HM5118160BLJ-7
HM5118160BLJ-8
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Untitled
Abstract: No abstract text available
Text: MITSUBISHI M EM OR Y CARD F LA S H M E M O R Y CAR DS M F 8 4 M 1 -G 4 E A T X X 8/76-bit Data Bus Flash M e m o ry C ard Connector Type Two-piece 68-pin 7 D E S C R IP TIO N The M F 84M 1 - G4E A T X X is a flash m em o ry card • T T L interface level ■ P ro g ra m /e ra se operation by softw are com m and
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8/76-bit
68-pin
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