D0254 Search Results

S35R2

Abstract: 1278n 74aC-aCT109 CD541 j8332 RCA
Contextual Info: HARRIS SEMICOND SECTOR 37E D • 4302271 D025411 6 *HAS _ Technical Data CD54/74AC109, CD54/74AC112 CD54/74ACT109, CD54/74ACT112 Advanced Information 07 Dual “J-K” Flip-Flop with Set and Reset CD54/74AC/ACT109 - Positive-Edge-Triggered J, K

Contextual Info: Or, Call Customer Service al 1-8Û0-548-6132 USA Only FEATURES APPLICATIONS • WIDE BANDWIDTH: 75MHz — Current Output 30MHz — Voltage Output • LOW NOISE • LOW FEEDTHROUGH: -60dB (5MHz) • GROUND-REFERRED OUTPUT • LOW OFFSET VOLTAGE • • •

Contextual Info: TOSHIBA TC5117400J/Z/FT-60/70 4,194,304 WORD X 4 BIT DYNAMIC RAM DESCRIPTION The TC5117400J/Z/FT-60/70 is the new generation dynamic RAM organized 4,194,304 woid by 4 bit. The TC5117400J/Z/FT-60/70 utilizes Toshiba’s CMOS silicon gate process technology as well as advanced

Contextual Info: MITSUBISHI MICROCOMPUTERS M37212M4-XXXSP, M37212M6-XXXSP/FP M37212EF-XXXSP/FP, M37212EFSP/FP SINGLE-CHIP 8-BIT CMOS MICROCOMPUTER for VOLTAGE SYNTHESIZER and ON-SCREEN DISPLAY CONTROLLER DESCRIPTION The M37212M4-XXXSP, M37212M6-XXXSP/FP are single-chip mi­

Contextual Info: International M Redifier pd9.i4ib IRGMH40F preliminary INSULATED GATE BIPOLAR TRANSISTOR Fast Speed IGBT Features • • • • • • • Eletrically Isolated and Hermetically Sealed Simple Drive Requirements Latch-proof Fast Speed operation 3 kHz ~ 8 kHz

Contextual Info: MITSUBISHI LSIs M 5 M 4 V 4 1 7 0 J ,T P ,R T - 6 ,- 7 ,- 8 ,- 6 S ,- 7 S ,- 8 S FAST PAGE MODE 4194304-BIT 262144-WORD BY 16-BIT DYNAMIC RAM DESCRIPTION PIN CONFIGURATION (TOP VIEW) This is a fam ily o f 2 6 2 1 4 4 -w o rd by 1 6 -b it dynamic RAMs, fabricated w ith the high performance CMOS process, and is

HN27C4001G-10

Abstract: HN27C4001 HN27C4001G-12 HN27C4001G-15 HN27C4001RR-12 HN27C4001TT-12 HN27C4001TT-15 HN27C4001-12 HN27C4001-10 Hitachi Scans-001
Contextual Info: HN27C4001 Series 4M 512K x 8-bit UV and OTP EPROM • DESCRIPTION The Hitachi HN27C4001 is a 4-Megabit Ultraviolet Erasable and One-Time Programmable Electrically Programmable Read Only Memory organized as 524,288 x 8 -bits. The HN27C4001 features fast address access times of 100,120

HN27C4096

Abstract: HN27C4096G-10 HN27C4096CC-10 HN27C4096 "pin compatible" LCC 44 HN27C4000 D0254 HN27C4096CC-12 HN27C4096G-12 HN27C4096G-15
Contextual Info: HN27C4096 Series 4M 256K x 16-bit UV and OTP EPROM • DESCRIPTION The Hitachi HN27C4096 is a 4-Megabit Ultraviolet Erasable and One-Time Programmable Electrically Programmable Read Only Memory organized as 262,144 x 16-bits. The HN27C4096 features fast address access times of 100,120

hitachi eprom

Abstract: HN27C101 HN27C101A HN27C101AG-10 HN27C101AG-12 HN27C101AG-15 Hitachi Scans-001
Contextual Info: H N 2 7 C 1 0 1 A S e r ie s - 1M 128K x 8-bit UV and OTP EPROM • DESCRIPTION The Hitachi HN27C101A is a 1-Megabit Ultraviolet Erasable and One-Time Programmable Electrically Programmable Read Only Memory organized as 131,072 x 8-bits.

Contextual Info: FUJITSU SEMICONDUCTOR DATA SHEET I DS04-27502-3E ASSP For Power Supply Applications Bi-CMOS Battery Backup 1C MB3790 • DESCRIPTION The MB3790 is designed to control power supplies to SRAM, logic 1C, or other circuit devices and protects them against momentary power failures by using backup batteries. In addition to its function to supply the power to

Contextual Info: For Im e iia ie Assistante, Coolscl Your Local Salesperson 3650 3652 BURR-BROWN Optically-Coupled Linear ISOLATION AMPLIFIERS FEATURES APPLICATIONS • BALANCED INPUT • LARGE COMMON-MODE VOLTAGES ±2000V Continuous 140dB Rejection • • • • • •

Contextual Info: HN27C4000 Series Preliminary 4M 256K x 16-bit or 512K x 8-bit UV and OTP EPROM • DESCRIPTION The Hitachi HN27C4000 is a 4-Megabit Ultraviolet Erasable and One-Time Programmable Electrically Programmable Read Only Memory organized as 524,288 x 8-bits or as 262,144 x 16-bits.