D-72 CASE WEIGHT Search Results

5B05

Abstract: 62901-B11-A buw70
Contextual Info: 2SC D • Û235b05 G0D4Ö52 â BiSIEû NPN Silicon Power Transistors BUW 70 BUW71 BUW 72 P T ~ 3 3 -/3 SIEMENS AKTIEN6ESELLSCHAF BUW 71, BUW 72, and BUW 73 are triple diffused silicon NPN power switching transistors in TO 3 case 3 A 2 DIN 41872 . They are outstanding for short switching times and high

U296

Abstract: BUW71 Q62702-U297 BUW72 BUW70 D-12 Q62702-U295 Q62901-B11-A Q62901-B50 fl23SbQS
Contextual Info: 2SC D • Û235b05 G0D4Ö52 â BiSIEû NPN Silicon Power Transistors SIEMENS AKTIEN6ESELLSCHAF BUW 70 BUW71 BUW 72 P T ~ 3 3 -/3 BUW 71, BUW 72, and BUW 73 are triple diffused silicon NPN power switching transistors in TO 3 case 3 A 2 DIN 41872 . They are outstanding for short switching times and high

BFX89

Abstract: Transistor BFX 90 BFX 514 Q62702-F296 Q 371 Transistor 2sc 684
Contextual Info: 2SC D • û23ShQS 000474^ 4 W S I E ù T ~ Z 'tï NPN Silicon Transistor for RF Broadband Amplifier BFX 89 - SIEMENS AKTIENGESELLSCHAF BFX 89 is an epitaxial NPN silicon RF transistor in TO 72 case (18 A 4 DIN 41876 . The leads are electrically insulated from the case. This transistor is suitable for general

Transistor BFX 90

Abstract: transistor bfx 73 BFX 514 BFX89 b 514 transistor
Contextual Info: 2SC D • û23ShQS 000474^ 4 W S I E ù NPN Silicon Transistor for RF Broadband Amplifier T ~ Z 'tï BFX 89 -SIEMENS AKTIEN GE SE LL SC HA F BFX 89 is an epitaxial NPN silicon RF transistor in TO 72 case (18 A 4 DIN 41876 . The leads are electrically insulated from the case. This transistor is suitable for general

AFY12

Abstract: OC 140 germanium transistor 103MHZ Germanium Transistor FLR12 611b transistor
Contextual Info: AFY12 PNP Mesa transistor for RF-application up to 260 MHz The A F Y 12 is a germanium P N P RF mesa transistor for general high-frequency use in a case 18 A 4 D IN 41 876 TO-72 . The terminals are electrically insulated from the case. The A F Y 12 is designed for use in pre-stages, mixer stages and oscillator

pm4020

Abstract: AF279 p21b AF279S AF240 900 mhz germanium diode Germanium Q60106-X240 S400 d 1556 transistor
Contextual Info: f 25C D • flS3SbOS 00DMQ7b 1 H S I E 6 PIMP Germanium RF Transistor - SIEMENS AKTIENGESELLSCHAF A F240 for m ixer and oscillator stages up to 9 0 0 M H z AF 2 4 0 is a germanium PNP mesa transistor in TO 72 case 18 A 4 DIN 41876 . The leads

E225703

Abstract: ITE Tech M-87 SPEC
Contextual Info: Adapter Technology CoLt d 1 et 1. Feature : ♦ Input ♦ Output ♦ Case Dimension : 72 L * 34 (W) * 69 (H) mm ♦ Efficiency : E ff(av) ^ 76.87 % . ♦ Safety : U L /C U L /P S E /B S M I ♦ EMI : Meet FCC Protection : OVP (Over Voltage Protection) ' SCP (Short Circuit Protection) '

AF 239 S

Abstract: AF 239 af239 Germanium power S 239 L siemens
Contextual Info: 2SC D • û23SbQS DOOMQTS 4 [SIE G AF 239 S PNP Germanium RF Transistor SIEMENS AKTIEN6ESELLSCHAF for output, mixer, and oscillator stages up to 90 0 M H z T - 3 / - 0 7 AF 239 S is a germanium PNP mesa transistor in TO 72 case 18 A 4 DIN 41876 . The leads

transistor KSA

Abstract: AF109R
Contextual Info: ESC D • flEBShOS 0ÛÛ4G53 0 « S I E G A F 109 R PNP Germanium RF Transistor SIEMENS AKT IE Nû ES EL LSC H AF 04053 D - T - 3 /'0 ~ 7 for A G C input stages up to 260 MHz AF 109 R is a germanium PNP RF mesa transistor in TO 72 case 18 A 4 DIN 41876 .

2n3824

Abstract: transistor a effet de champ 3824
Contextual Info: 2I\I 3824 F IE L D E FF E C T T R A N S IS T O R , S IL IC O N , N C H A N N E L TRANSISTOR A E F FE T DE CHAMP, SILICIUM , CANAL N Chopper Découpeur Maximum power dissipation Case TO -72 — See outline drawing CB-4 on last pages Dissipation aepuissance maximale

Contextual Info: Weinschel Model 72 New Product dc to 4.0 GHz MEDIUM POWER COAXIAL ATTENUATOR 50 WATTS Type N C onnectors C onduction C ooled TEM PERATURE RANGE: -55 °C to 100 °C case . CONNECTORS: T yp e N c o n n e c to rs per M IL-S T D -3 4 8 interface dim ensions - mate n o n d e s tru c tiv e ^ with

Contextual Info: ESC D • ûS35bOS Q0Q47SÔ 7 * S I E G ^ NPN Silicon RF Broadband Transistor BFW 30 Not for new design SIEMENS AK TIEN GE SE LL SC HA F BFW 30 is an epitaxial NPN silicon planar RF transistor in a TO 72 case 18 A 4 DIN 41876 , designed for universal application up to the GHz range, e. g. for vertical amplifiers

transistor a750

Abstract: F240 transistor TIC 122 Transistor Germanium power tic 122
Contextual Info: r. 2 S C D • f l S3 SbO S G0 G4 G7 b 1 H SIE6 PIMP Germanium RF Transistor - S I E M E N S AF240 AKTIENGESELLSCHAF fo r m ixe r and o sc illa to r sta g e s up to 9 0 0 M H z A F 24 0 is a germanium PNP mesa transistor in TO 72 case 18 A 4 DIN 41876 . The leads

"1 watt led"

Abstract: IN421 N102N "3 watt led" Energizer aaa Push button flashlight tail N526-ND HDL33A2 TUF4D1 6v lantern battery
Contextual Info: Industrial Alkaline and Silver Oxide Batteries Average Cut-Off Size V Capacity (mAh) Voltage (V) Rated Dimensions — Inch (mm) Drain/Load Diameter Height Weight oz. (g) Digi-Key Part No. Each D C AA AAA N 9V 6V Lantern D C AA 1.5 20,500 0.8 25mA 1.346 (34.2)

b6 lf series

Abstract: B6-125/165-40SI
Contextual Info: B6 LF Series 1.5~3W Isolated DC/DC Converter Features: zWide 2 : 1 Input Range zInput π- Filter zInput / Output Isolation 1.5K Vdc zLow Ripple And Noise z100% Burn-In zRegulated type zNet Weight : 12 g / 14 g Typical z24 Pin DIL Package zCustom Design Available

LF 833

Abstract: Enterprise 1500 lf 1250 B7-1205S10 B7-1205S15 B7-1212S15 B7-123R3S10 B7-2405S10 B7-2405S15 B7-2412S10
Contextual Info: B7 LF Series 10 to 15 Watt Isolated DC-DC Converter Single / Dual Output 1 . Features λ λ λ λ λ λ λ λ Wide 2 : 1 Input Range Low Ripple and Noise Input / Output Isolation 1.5K Vdc or 3K Vdc 100% Burn-In Input p - Filter Custom Design Available Net Weight : 24 g / 36.5 g Typical

R836

Abstract: m 7401
Contextual Info: MICROWAVE ISOLATOR-SURFACE MOUNT muffata CE072 Series f FEATURES • ■ ■ ■ ■ Surface mount Reflow soldering capability Miniature size 7.0 x 7.0 x 3.0mm Light weight (0.8g) High reliability APPLICATIONS ■ Hand Held Telephone ■ Cordless Telephone

FSS-1200

Abstract: FSS1412P 1432h FSS-1412P FRS1412P FRS1154P FSS OPTREX 1412 FSS1432PH ic 8035 FSS-1432P
Contextual Info: OPTREX CORP 3bE D • bflD2ô2,ï D0001Q3 T « O P C J "T q|-3,g LCD PANEL 1. Light weight and thin structure. 2. Low driving voltage and low power consumption l~10^w/cm! , which easily enable by battery driving in combinations with C-MOS LSI. 3. Pattern graphics can be designed rather freely.

Contextual Info: 3-phase filters FN 3025 / FN 3026 Advanced EMC/RFI filter concept with minimum leakage current • ■ ■ ■ ■ ■ ■ ■ Compact state-of-the-art filter concept Light weight plastic enclosure design Minimized filter leakage current Hinged safety covers

Contextual Info: Preliminary datasheet FN 3025 / FN 3026 Advanced EMC/RFI filter concept with minimum leakage current • ■ ■ ■ ■ ■ ■ ■ Compact state of the art filter concept Light weight plastic enclosure design Minimized filter leakage current Hinged safety covers

TI159

Abstract: TI-162 AF267 Germanium Transistor Texas Germanium 160 germanium transistor
Contextual Info: TYPES TI159, TI 160, TI 161, TI162 P-N-P ALL0Y-JUNCTI0N GERMANIUM MEDIUM-POWER TRANSISTORS NO. DL-S 634413, DECEMBER 1963 The transistors a re in h erm etically-sealed w e ld e d leads. A p p ro x im a te weight: 4.8 gram s. cases with glass-to-m etal seals betw een case a n d

Dc servo motor

Abstract: 3 phase 200 VAC servo drive schematic EN 133200 ISO 2768 ISO 2768 c rfi filter
Contextual Info: 3-phase filters FN 3025 / FN 3026 Advanced EMC/RFI filter concept with minimum leakage current • ■ ■ ■ ■ ■ ■ ■ Compact state-of-the-art filter concept Light weight plastic enclosure design Minimized filter leakage current Hinged safety covers

Contextual Info: 3-phase filters FN 3025 / FN 3026 Advanced EMC/RFI filter concept with minimum leakage current n n n n n n n n Compact state-of-the-art filter concept Light weight plastic enclosure design Minimized filter leakage current Hinged safety covers Revolutionary embedded filter terminals

Contextual Info: 3-phase filters FN 3025 / FN 3026 Advanced EMC/RFI filter concept with minimum leakage current n n n n n n n n Compact state-of-the-art filter concept Light weight plastic enclosure design Minimized filter leakage current Hinged safety covers Revolutionary embedded filter terminals