1212CN
Abstract: No abstract text available
Text: VIEW ON MATING SIDE —— L1 — - ^ ROW E D C B A L2 1 C C D E D <5ZZ MARKING PERFO RM ANC E L E V E L F L U X PROOF LUBRICATION DIMENSIONS TECHNICAL D A T A 2 3 4 C C C C C C D D D E E E D D D PIN Q U AN TITY 5 C C D E D 6 C C D E D PIN 6 6 6 6 6 =30 STANDARDS
|
OCR Scan
|
SD-85801-008
PS-85801-002
SD-85801-010
1290F
1212CN
|
PDF
|
1206-8
Abstract: Si5402BDC
Text: Si5402BDC New Product Vishay Siliconix N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 30 D TrenchFETr Power MOSFET rDS(on) (W) ID (A) 0.035 @ VGS = 10 V 6.7 0.042 @ VGS = 4.5 V 6.1 D 1206-8 ChipFETr 1 D D D D D D G G S Marking Code AD XXX Lot Traceability
|
Original
|
Si5402BDC
Si5402BDC-T1--E3
08-Apr-05
1206-8
|
PDF
|
1206-8
Abstract: marking code AD Si5402BDC
Text: Si5402BDC New Product Vishay Siliconix N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 30 D TrenchFETr Power MOSFET rDS(on) (W) ID (A) 0.035 @ VGS = 10 V 6.7 0.042 @ VGS = 4.5 V 6.1 D 1206-8 ChipFETr 1 D D D D D D G G S Marking Code AD XXX Lot Traceability
|
Original
|
Si5402BDC
Si5402BDC-T1--E3
S-41495--Rev.
09-Jun-04
1206-8
marking code AD
|
PDF
|
Si5402BDC
Abstract: No abstract text available
Text: Si5402BDC New Product Vishay Siliconix N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 30 D TrenchFETr Power MOSFET rDS(on) (W) ID (A) 0.035 @ VGS = 10 V 6.7 0.042 @ VGS = 4.5 V 6.1 D 1206-8 ChipFETr 1 D D D D D D G G S Marking Code AD XXX Lot Traceability
|
Original
|
Si5402BDC
Si5402BDC-T1--E3
18-Jul-08
|
PDF
|
1N4148 75V 150mA Diodes
Abstract: 1n4148 1N4148.1N4448 free download datasheet 1N4148 1N4448
Text: 1N4148 & 1N4448 Fast Switching Diode Features: D Fast Switching Speed D General Purpose Rectification D Silicon Epitaxial Planar Construction Mechanical Data: D Case: DO-35 D Leads: Solderable per MIL-STD-202, Method 208 D Polarity: Cathode Band D Marking: Type Number
|
Original
|
1N4148
1N4448
DO-35
MIL-STD-202,
100mA
1N4148 75V 150mA Diodes
1n4148
1N4148.1N4448
free download datasheet 1N4148
1N4448
|
PDF
|
1N4148 75V 150mA Diodes
Abstract: 1N4148 75v 150mA diode 1n4148 1N4148 75V 150mA 500mW 1N4148 diode data sheet 1N4148.1N4448 1N4448
Text: 1N4148 & 1N4448 Fast Switching Diode Features: D Fast Switching Speed D General Purpose Rectification D Silicon Epitaxial Planar Construction Mechanical Data: D Case: DO−35 D Leads: Solderable per MIL−STD−202, Method 208 D Polarity: Cathode Band D Marking: Type Number
|
Original
|
1N4148
1N4448
DO-35
MIL-STD-202,
100mA
1N4148 75V 150mA Diodes
1N4148 75v 150mA diode
1n4148
1N4148 75V 150mA 500mW
1N4148 diode data sheet
1N4148.1N4448
1N4448
|
PDF
|
SI5435BDC
Abstract: Si5435BDC-T1
Text: Si5435BDC New Product Vishay Siliconix P-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) −30 rDS(on) (W) ID (A) 0.045 @ VGS = −10 V −5.9 0.080 @ VGS = −4.5 V −4.4 D TrenchFETr Power MOSFETS 1206-8 ChipFETr S 1 D D G D D D D G S Marking Code
|
Original
|
Si5435BDC
Si5435BDC-T1--E3
18-Jul-08
Si5435BDC-T1
|
PDF
|
SI5435BDC
Abstract: No abstract text available
Text: Si5435BDC New Product Vishay Siliconix P-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) −30 rDS(on) (W) ID (A) 0.045 @ VGS = −10 V −5.9 0.080 @ VGS = −4.5 V −4.4 D TrenchFETr Power MOSFETS 1206-8 ChipFETr S 1 D D G D D D D G S Marking Code
|
Original
|
Si5435BDC
Si5435BDC-T1--E3
S-41887--Rev.
18-Oct-04
|
PDF
|
Si5435BDC-T1
Abstract: SI5435BDC
Text: Si5435BDC New Product Vishay Siliconix P-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) −30 rDS(on) (W) ID (A) 0.045 @ VGS = −10 V −5.9 0.080 @ VGS = −4.5 V −4.4 D TrenchFETr Power MOSFETS 1206-8 ChipFETr S 1 D D G D D D D G S Marking Code
|
Original
|
Si5435BDC
Si5435BDC-T1--E3
08-Apr-05
Si5435BDC-T1
|
PDF
|
SI5402DC
Abstract: No abstract text available
Text: Si5402DC New Product Vishay Siliconix N-Channel 30-V D-S MOSFET PRODUCT SUMMARY VDS (V) 30 rDS(on) (W) ID (A) 0.035 @ VGS = 10 V "6.7 0.055 @ VGS = 4.5 V "5.3 D 1206-8 ChipFET 1 D D D D D D G G Marking Code S AA XX Lot Traceability and Date Code S Part # Code
|
Original
|
Si5402DC
S99267â
15-Nov-99
|
PDF
|
Si5404BDC
Abstract: No abstract text available
Text: Si5404BDC New Product Vishay Siliconix N-Channel 2.5-V G-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 20 rDS(on) (W) ID (A) 0.028 @ VGS = 4.5 V 7.5 0.039 @ VGS = 2.5 V 6.3 D TrenchFETr Power MOSFET Qg (Typ) 63 6.3 1206-8 ChipFETr D 1 D D D D G D D G S Marking Code
|
Original
|
Si5404BDC
Si5404BDC-T1--E3
08-Apr-05
|
PDF
|
Si5404BDC
Abstract: No abstract text available
Text: Si5404BDC New Product Vishay Siliconix N-Channel 2.5-V G-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 20 rDS(on) (W) ID (A) 0.028 @ VGS = 4.5 V 7.5 0.039 @ VGS = 2.5 V 6.3 D TrenchFETr Power MOSFET Qg (Typ) 63 6.3 1206-8 ChipFETr D 1 D D D D G D D G S Marking Code
|
Original
|
Si5404BDC
Si5404BDC-T1--E3
18-Jul-08
|
PDF
|
S 71062
Abstract: Si5402DC MARKING CODE AA S9926
Text: Si5402DC New Product Vishay Siliconix N-Channel 30-V D-S MOSFET PRODUCT SUMMARY VDS (V) 30 rDS(on) (W) ID (A) 0.035 @ VGS = 10 V "6.7 0.055 @ VGS = 4.5 V "5.3 D 1206-8 ChipFET 1 D D D D D D G G S Marking Code AA XX Lot Traceability and Date Code S Part # Code
|
Original
|
Si5402DC
S-99267--Rev.
15-Nov-99
S 71062
MARKING CODE AA
S9926
|
PDF
|
MARKING CODE AA
Abstract: Si5402DC Vishay DaTE CODE 1206-8 Si5402DC-T1
Text: Si5402DC Vishay Siliconix N-Channel 30-V D-S MOSFET PRODUCT SUMMARY VDS (V) 30 rDS(on) (Ω) ID (A) 0.035 @ VGS = 10 V 6.7 0.055 @ VGS = 4.5 V 5.3 D 1206-8 ChipFETt 1 D D D D D D G G S Marking Code AA XX Lot Traceability and Date Code S Part # Code
|
Original
|
Si5402DC
Si5402DC-T1
S-21251--Rev.
05-Aug-02
MARKING CODE AA
Vishay DaTE CODE 1206-8
|
PDF
|
|
|
SI5402DC
Abstract: No abstract text available
Text: Si5402DC Vishay Siliconix N-Channel 30-V D-S MOSFET PRODUCT SUMMARY VDS (V) 30 rDS(on) (W) ID (A) 0.035 @ VGS = 10 V "6.7 0.055 @ VGS = 4.5 V "5.3 D 1206-8 ChipFETt 1 D D D D D D G G S Marking Code AA XX Lot Traceability and Date Code S Part # Code Bottom View
|
Original
|
Si5402DC
Si5402DC-T1
08-Apr-05
|
PDF
|
Si5402DC
Abstract: Si5402DC-T1
Text: Si5402DC Vishay Siliconix N-Channel 30-V D-S MOSFET PRODUCT SUMMARY VDS (V) 30 rDS(on) (W) ID (A) 0.035 @ VGS = 10 V "6.7 0.055 @ VGS = 4.5 V "5.3 D 1206-8 ChipFETt 1 D D D D D D G G S Marking Code AA XX Lot Traceability and Date Code S Part # Code Bottom View
|
Original
|
Si5402DC
Si5402DC-T1
S-21251--Rev.
05-Aug-02
|
PDF
|
Si5404BDC-T1-E3
Abstract: SI5404BDC
Text: Si5404BDC New Product Vishay Siliconix N-Channel 2.5-V G-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 20 rDS(on) (W) ID (A) 0.028 @ VGS = 4.5 V 7.5 0.039 @ VGS = 2.5 V 6.3 D TrenchFETr Power MOSFET Qg (Typ) 63 6.3 1206-8 ChipFETr D 1 D D D D G D D G S Marking Code
|
Original
|
Si5404BDC
Si5404BDC-T1--E3
S-41826--Rev.
11-Oct-04
Si5404BDC-T1-E3
|
PDF
|
SI5461EDC
Abstract: No abstract text available
Text: Si5461EDC New Product Vishay Siliconix P-Channel 20-V D-S MOSFET PRODUCT SUMMARY VDS (V) rDS(on) (W) ID (A) 0.045 @ VGS = –4.5 V –6.2 –20 0.060 @ VGS = –2.5 V –5.4 0.082 @ VGS = –1.8 V –4.6 1206-8 ChipFET S 1 D D D D D D G S Marking Code LA
|
Original
|
Si5461EDC
S-03083--Rev.
12-Feb-01
|
PDF
|
Si5475DC
Abstract: S0233
Text: Si5475DC New Product Vishay Siliconix P-Channel 12-V D-S MOSFET PRODUCT SUMMARY VDS (V) –12 rDS(on) (W) ID (A) 0.031 @ VGS = –4.5 V –7.6 0.041 @ VGS = –2.5 V –6.6 0.054 @ VGS = –1.8 V –5.8 S 1206-8 ChipFET 1 D D G D D D D G S Marking Code BF XX
|
Original
|
Si5475DC
S-02332--Rev.
23-Oct-00
S0233
|
PDF
|
Si5435DC
Abstract: Si5435DC-T1
Text: Si5435DC Vishay Siliconix P-Channel 30-V D-S MOSFET PRODUCT SUMMARY VDS (V) -30 rDS(on) (Ω) ID (A) 0.050 @ VGS = -10 V -5.6 0.080 @ VGS = -4.5 V -4.0 S 1206-8 ChipFETt 1 D D G D D D D G S Marking Code BE XX Lot Traceability and Date Code Part # Code
|
Original
|
Si5435DC
Si5435DC-T1
S-21251--Rev.
05-Aug-02
|
PDF
|
Si5465EDC
Abstract: siliconix
Text: Si5465EDC New Product Vishay Siliconix P-Channel 12-V D-S MOSFET PRODUCT SUMMARY VDS (V) –12 rDS(on) (W) ID (A) 0.037 @ VGS = –4.5 V –7.0 0.048 @ VGS = –2.5 V –6.1 0.065 @ VGS = –1.8 V –5.2 S 1206-8 ChipFET 1 D D G 5.4 kW D D D D G S Marking Code
|
Original
|
Si5465EDC
S-03912--Rev.
21-May-01
siliconix
|
PDF
|
Si5435DC
Abstract: 41AR Si5435DC-T1
Text: Si5435DC Vishay Siliconix P-Channel 30-V D-S MOSFET PRODUCT SUMMARY VDS (V) -30 rDS(on) (Ω) ID (A) 0.050 @ VGS = -10 V -5.6 0.080 @ VGS = -4.5 V -4.0 S 1206-8 ChipFETt 1 D D G D D D D G S Marking Code BE XX Lot Traceability and Date Code Part # Code
|
Original
|
Si5435DC
Si5435DC-T1
08-Apr-05
41AR
|
PDF
|
Untitled
Abstract: No abstract text available
Text: Si5465EDC New Product Vishay Siliconix P-Channel 12-V D-S MOSFET PRODUCT SUMMARY VDS (V) rDS(on) (W) ID (A) 0.037 @ VGS = –4.5 V –7.0 –12 0.048 @ VGS = –2.5 V –6.1 0.065 @ VGS = –1.8 V –5.2 1206-8 ChipFET S 1 D D D D D D G S Marking Code 5.4 kW
|
Original
|
Si5465EDC
S-03191--Rev.
12-Mar-01
|
PDF
|
Untitled
Abstract: No abstract text available
Text: Si5435DC New Product Vishay Siliconix P-Channel 30-V D-S MOSFET PRODUCT SUMMARY VDS (V) rDS(on) (W) ID (A) 0.050 @ VGS = –10 V –5.6 0.080 @ VGS = –4.5 V –4.0 –30 S 1206-8 ChipFET 1 D D G D D D D G S Marking Code BE XX Lot Traceability and Date Code
|
Original
|
Si5435DC
S-00233--Rev.
21-Feb-00
|
PDF
|
