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    SI5461EDC Price and Stock

    Vishay Siliconix SI5461EDC-T1-E3

    MOSFET P-CH 20V 4.5A 1206-8
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    Vishay Siliconix SI5461EDC-T1-GE3

    MOSFET P-CH 20V 4.5A 1206-8
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    Vishay Siliconix SI5461EDC-T1-E3/BKN

    MOSFET; P-CH, 20V(D-S) 45MOHM CHIPFET | Siliconix / Vishay SI5461EDC-T1-E3/BKN
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    RS SI5461EDC-T1-E3/BKN Bulk 1
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    SI5461EDC Datasheets (6)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    Si5461EDC Vishay Intertechnology P-Channel 20-V (D-S) MOSFET Original PDF
    SI5461EDC Vishay Telefunken P-channel 20-v (d-s) Mosfet Original PDF
    Si5461EDC SPICE Device Model Vishay P-Channel 20-V (D-S) MOSFET Original PDF
    SI5461EDC-T1 Vishay Siliconix P-Channel 20-V (D-S) MOSFET Original PDF
    SI5461EDC-T1-E3 Vishay Siliconix FETs - Single, Discrete Semiconductor Products, MOSFET P-CH 20V 4.5A CHIPFET Original PDF
    SI5461EDC-T1-GE3 Vishay Siliconix FETs - Single, Discrete Semiconductor Products, MOSFET P-CH 20V 4.5A CHIPFET Original PDF

    SI5461EDC Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    16562

    Abstract: 4717 AN609 Si5461EDC
    Text: Si5461EDC_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. These techniques are described in "A Simple Method of Generating Thermal Models for a Power MOSFET"[1].


    Original     		Si5461EDC AN609 20-Jun-07 16562 4717 PDF

    Untitled

    Abstract: No abstract text available
    Text: Si5461EDC Vishay Siliconix P-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 20 RDS(on) (Ω) ID (A) 0.045 at VGS = - 4.5 V - 6.2 0.060 at VGS = - 2.5 V - 5.4 0.082 at VGS = - 1.8 V - 4.6 • Halogen-free According to IEC 61249-2-21 Available • ESD Protectedb 5000 V


    Original     		Si5461EDC Si5461EDC-T1-E3 Si5461EDC-T1-GE3 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12 PDF

    SI5461EDC

    Abstract: No abstract text available
    Text: Si5461EDC Vishay Siliconix P-Channel 20-V D-S MOSFET PRODUCT SUMMARY VDS (V) rDS(on) (Ω) ID (A) 0.045 @ VGS = -4.5 V -6.2 -20 0.060 @ VGS = -2.5 V -5.4 0.082 @ VGS = -1.8 V -4.6 S 1206-8 ChipFETt 1 D D G 5.4 kΩ D D D D G S Marking Code LA XX Lot Traceability


    Original     		Si5461EDC Si5461EDC-T1 18-Jul-08 PDF

    Si5461EDC

    Abstract: No abstract text available
    Text: SPICE Device Model Si5461EDC Vishay Siliconix P-Channel 20-V D-S MOSFET CHARACTERISTICS • P-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range


    Original     		Si5461EDC 13-Apr-01 PDF

    Si5461EDC

    Abstract: marking code LA
    Text: Si5461EDC New Product Vishay Siliconix P-Channel 20-V D-S MOSFET PRODUCT SUMMARY VDS (V) –20 rDS(on) (W) ID (A) 0.045 @ VGS = –4.5 V –6.2 0.060 @ VGS = –2.5 V –5.4 0.082 @ VGS = –1.8 V –4.6 S 1206-8 ChipFET 1 D D G 5.4 kW D D D D G S Marking Code


    Original     		Si5461EDC S-03968--Rev. 28-May-01 marking code LA PDF

    Si5461EDC

    Abstract: No abstract text available
    Text: SPICE Device Model Si5461EDC Vishay Siliconix P-Channel 20-V D-S MOSFET CHARACTERISTICS • P-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range


    Original     		Si5461EDC 18-Jul-08 PDF

    SI5461EDC

    Abstract: No abstract text available
    Text: Si5461EDC Vishay Siliconix P-Channel 20-V D-S MOSFET PRODUCT SUMMARY VDS (V) rDS(on) (Ω) ID (A) 0.045 @ VGS = -4.5 V -6.2 -20 0.060 @ VGS = -2.5 V -5.4 0.082 @ VGS = -1.8 V -4.6 S 1206-8 ChipFETt 1 D D G 5.4 kΩ D D D D G S Marking Code LA XX Lot Traceability


    Original     		Si5461EDC Si5461EDC-T1 08-Apr-05 PDF

    Si5461EDC

    Abstract: No abstract text available
    Text: SPICE Device Model Si5461EDC Vishay Siliconix P-Channel 20-V D-S MOSFET CHARACTERISTICS • P-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range


    Original     		Si5461EDC S-51984Rev. 03-Oct-05 PDF

    Untitled

    Abstract: No abstract text available
    Text: Si5461EDC Vishay Siliconix P-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 20 RDS(on) (Ω) ID (A) 0.045 at VGS = - 4.5 V - 6.2 0.060 at VGS = - 2.5 V - 5.4 0.082 at VGS = - 1.8 V - 4.6 • Halogen-free According to IEC 61249-2-21 Available • ESD Protectedb 5000 V


    Original     		Si5461EDC Si5461EDC-T1-E3 Si5461EDC-T1-GE3 11-Mar-11 PDF

    Si5461EDC

    Abstract: Si5461EDC-T1 marking code LA
    Text: Si5461EDC Vishay Siliconix P-Channel 20-V D-S MOSFET PRODUCT SUMMARY VDS (V) rDS(on) (Ω) ID (A) 0.045 @ VGS = -4.5 V -6.2 -20 0.060 @ VGS = -2.5 V -5.4 0.082 @ VGS = -1.8 V -4.6 S 1206-8 ChipFETt 1 D D G 5.4 kΩ D D D D G S Marking Code LA XX Lot Traceability


    Original     		Si5461EDC Si5461EDC-T1 S-21251--Rev. 05-Aug-02 marking code LA PDF

    Si5461EDC

    Abstract: 54kd
    Text: Si5461EDC Vishay Siliconix P-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 20 RDS(on) (Ω) ID (A) 0.045 at VGS = - 4.5 V - 6.2 0.060 at VGS = - 2.5 V - 5.4 0.082 at VGS = - 1.8 V - 4.6 • Halogen-free According to IEC 61249-2-21 Available • ESD Protectedb 5000 V


    Original     		Si5461EDC Si5461EDC-T1-E3 Si5461EDC-T1-GE3 18-Jul-08 54kd PDF

    Untitled

    Abstract: No abstract text available
    Text: Si5461EDC Vishay Siliconix P-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 20 RDS(on) (Ω) ID (A) 0.045 at VGS = - 4.5 V - 6.2 0.060 at VGS = - 2.5 V - 5.4 0.082 at VGS = - 1.8 V - 4.6 • Halogen-free According to IEC 61249-2-21 Available • ESD Protectedb 5000 V


    Original     		Si5461EDC Si5461EDC-T1-E3 Si5461EDC-T1-GE3 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 PDF

    SI5461EDC

    Abstract: No abstract text available
    Text: SPICE Device Model Si5461EDC P-Channel 20-V D-S MOSFET Characteristics • P-channel Vertical DMOS • Macro-Model (Sub-circuit) • Level 3 MOS • Applicable for Both Linear and Switch Mode • Applicable Over a -55 to 125°C Temperature Range • Models Gate Charge, Transient, and Diode Reverse


    Original     		Si5461EDC PDF

    SI5461EDC

    Abstract: No abstract text available
    Text: Si5461EDC New Product Vishay Siliconix P-Channel 20-V D-S MOSFET PRODUCT SUMMARY VDS (V) rDS(on) (W) ID (A) 0.045 @ VGS = –4.5 V –6.2 –20 0.060 @ VGS = –2.5 V –5.4 0.082 @ VGS = –1.8 V –4.6 1206-8 ChipFET S 1 D D D D D D G S Marking Code LA


    Original     		Si5461EDC S-03083--Rev. 12-Feb-01 PDF

    VN10KLS

    Abstract: mosfet bs250 Si4730 SUP85N03-04P VN66AFD Si4835DY si5504 SI3459DV sup65p06 sub75p05
    Text: Power MOSFET Selector Guide Vishay Siliconix LITTLE FOOT Plusä ä Schottky Name Channel Configuration VDS V rDS(on) @ 10.0V rDS(on) @ 4.5V rDS(on) @ 3.3V rDS(on) @ 2.5V rDS(on) @ 1.8V ID (A) Max. Qg (nC) Typ. PD (W) Max. SO-8 Si4831DY P Single Plus Integrated


    Original     		Si4831DY Si4833DY Si4852DY Si4816DY 10Single VN50300L VN50300T OT-23 VN66AFD VN10KLS mosfet bs250 Si4730 SUP85N03-04P VN66AFD Si4835DY si5504 SI3459DV sup65p06 sub75p05 PDF

    GS 069

    Abstract: Si5902DC SPICE Device Model tsop6 marking 312 sC89-6 Si7705DN SI7100DN Si3865BDV Si5947DU Si3861BDV 1212-8
    Text: Power MOSfETs for Portable applications Selector guide vishay Siliconix 2201 Laurelwood road P.o. Box 54951 santa clara, cA 95056 Phone: +1 408 988 8000 Fax: +1 408 567 8950 www.vishay.com NOTICE specifications of the products displayed herein are subject to change without notice. Vishay intertechnology, inc., or anyone on its behalf, assumes no


    Original     		Si9165 Si9169 600-mA TSSOP-20 MSOP-10 SiP1759 GS 069 Si5902DC SPICE Device Model tsop6 marking 312 sC89-6 Si7705DN SI7100DN Si3865BDV Si5947DU Si3861BDV 1212-8 PDF