D 756 TRANSISTOR Search Results

2SC756

Contextual Info: sony: S E M I C O N D U C T O R S V - — h 7 v >>X * 2 SC 756 {±, $f b L < H fg § ft tz, 7 'y 'v 7^9 Advanced Passivated Mesa APM M / ' Transistor) T", , -f-coii M i- L , fciS ffllg , ^ f f l 'l t i O b 7 2 SC 756 ( i , S& S& to If i ft 3£ 32 v 9 9 • x i

GaN ADS

Abstract: CGH40010 Large Signal Model CGH40010 AlGaN/GaN HEMTs CGH40010 ads Class E amplifier class E power amplifier GaN amplifier class d amplifier theory transistor 40361
Contextual Info: A High Power, High Efficiency Amplifier using GaN HEMT Bumjin Kim, D. Derickson, and C. Sun California Polytechnic State University –Electrical Engineering Department San Luis Obispo, CA 93407 csun@calpoly.edu, 805-756-2004 Abstract—A class B and a class F power amplifier are

ztx756

Abstract: SE179
Contextual Info: PNP Silicon Planar Medium Power High Voltage Transistors ZTX 756 ZTX 757 FEATURES • • • • • 1W p o w e r d issip a tio n a t T >mb = 2 5 ° C E xce lle n t gain c h a ra c te ristic s at lc = 1 0 0 m A V o lta g e s up to 3 0 0 V L o w sa tu ra tion v o lta g e s

2N7606U3

Abstract: IRHLYS77034CM 2n7606 2n7607
Contextual Info: INCH-POUND MIL-PRF-19500/756 28 April 2010 PERFORMANCE SPECIFICATION SHEET SEMICONDUCTOR DEVICE, FIELD EFFECT TRANSISTOR, N-CHANNEL, RADIATION HARDENED TOTAL DOSE AND SINGLE EVENT EFFECTS , LOGIC-LEVEL SILICON, TYPES 2N7607T3 AND 2N7606U3 JANTXVR, JANTXVF, JANSR, AND JANSF

SE024 ic

Abstract: MAX756 equivalent Sumida CD54-220 MAX757 SE024 CMOS step-up DC-DC switching regulator for small, low input voltage MAX756 190113 MAX756EPA MAX756CSA
Contextual Info: 19-0113; Rev. 0:6/93 3.3V/5V /A djustable O utput, Step-Up, DC-DC C onverters The MAX756/MAX757 provide three improvements over previous devices. Physical size is reduced - the high switching frequencies up to 0.5MHz made possible by MOSFET power transistors allow for tiny (<5mm diameter)

MAX756CSA

Contextual Info: 19-0113; Rev. 0; 6/93 3.3V/5V /A djustable Output, Step-Up, DC-OC Converters The MAX756/MAX757 provide three improvements over previous devices. Physical size is reduced - the high switching frequencies up to 0.5MHz made possible by MOSFET power transistors allow for tiny (<5mm diameter)

Power Bipolar Transistors

Contextual Info: PACKAGE OUTLINES Page SOT78 T0-220AB SOT82 SOT186(10-220) S O U 86A (Isolated TO-220AB) SOT199 SOT399 (TOP3D) 754 755 756 757 758 759 SOT429 (TO-247) SOT43Q (TOP3L) 760 761 Philips Semiconductors Power Bipolar Transistors Package outlines Plastic single-ended package; heatsink mounted; 1 mounting hole; 3-lead TO-22QAB

Power Bipolar Transistors

Abstract: SOT430 transistors A1 757 sot199 to220 5 lead plastic
Contextual Info: PACKAGE OUTLINES SOT78 TO-220AB SOT82 SOT186(TO-220) SOT186A (Isolated TO-220AB) SOT199 SOT399 (TOP3D) SOT429 (TO-247) SOT430 (TOP3L) Page 754 755 756 757 758 759 760 761 Philips Semiconductors Power Bipolar Transistors Package outlines Plastic single-ended package; heatsink mounted; 1 mounting hole; 3-lead TO-220AB

Contextual Info: IS/ISO 9002 Lic# QSC/L- 000019.2 Continental Device India Limited IS / IECQC 700000 IS / IECQC 750100 An IS/ISO 9002 and IECQ Certified Manufacturer TO-92 Plastic Package CP756 CP757 PNP SILICON PLANAR EPITAXIAL TRANSISTORS Medium Power High Voltage Transistors

schematic diagram of a router

Abstract: "plasma generator " schematic D 756 transistor jk flip flop to d flip flop conversion IGC10000 IGC10408 IGC10756 IGC11500 power supply tester schematic diagram 3 phase inverter simulation diagram
Contextual Info: llDßfinii^DtL The IG C 10000 Series C M O S Gate Arrays FEATURES GENERAL DESCRIPTION • Complexity from 408 to 1500 Equivalent 2-input Gates ■ Mature Silicon Gate CMOS Technology — Low development cost —3.3 to 9V nominal power supply range An IGC10000 Gate Array is a m atrix o f identical cells,

transistor B 764

Abstract: transistor b 745 sot26 sot363 transistor 752 transistor transistor 778 D 756 transistor transistor 746 d 772 transistor
Contextual Info: Packaging Details Page D2P A K . DPAK - Rectifier. DPAK - Transistor.

MAX756 for low power DC-DC converter

Abstract: MAX756CSA MAX757
Contextual Info: 19-0113; Rev. 1; 10/93 /• /■ yjxiyi/i 3 .3V/5V/A djustable Output, Step-Up, DC-DC C onverters The MAX756/MAX757 provide three improvements over previous devices. Physical size is reduced - the high switching frequencies up to 0.5MHz made possible by

ECG756

Abstract: ecg circuit schematic transistors 757
Contextual Info: 9 bbSiTSö DDD3ME3 5 17E D PHILIPS E C G INC ECG756,ECG757 ECG758,ECG759 T—58—11—73 MONOLITHIC VOLTAGE REGULATORS semiconductors ECG756 - Discontinued 3 v IN REF. GND 7 ] V IN T h is series o f voltage regulators is designed to deliver load cu r­

irfd110

Abstract: fd110
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA IRFD110 IRFD113 TMOS Field Effect Transistor Dual In-Line Package N-Channel Enhancement Mode TM O S FET TR A NSISTO R S FET DIP Ideal for Peripheral Control Applications Intermediate 1 Watt Power Capability Standard DIP Outline

ESM379

Abstract: esm diodes
Contextual Info: *E S M 379 PNP SILICON TRANSISTOR, PLANAR TRANSISTOR PNP S ILIC IU M , PLAN A R He Preferred device D is p o s itif recommandé The ESM 379 is a low noise high current transistor w ith very good signal handling capability. It is intended for use as input am plifier in large signal

darlington 8A 300V

Abstract: 2SD1534
Contextual Info: Power Transistors 2SD1534 2S D 1534 Silicon PNP Triple-Diffused Planar Darlington Type • Package Dim ensions High Power A m plifier Unit ! mm ■ Features • V ery goo d lin earity o f DC c u r re n t gain • High c o lle c to r-b a s e v o lta g e I i f e

BFQ253A

Abstract: BFQ233 BFQ233A BFQ253
Contextual Info: Philips Semiconductors b b £ 3 R 3 ]i G D 3 1 7 D ti EGO NPN 1 GHz video transistors M l APX Product specification BFQ233; BFQ233A "• N AMER PHILIPS/DISCRETE DESCRIPTION blE D PINNING NPN silicon epitaxial transistor in a SOT5 TO-39 envelope with emitter-ballasting resistors and a

4G lte RF Transceiver

Abstract: UMTS band 1 SMA duplexer LTE filter band 13 LTE bandpass filter PIN DIODES OFFER HIGH POWER HF BAND SWITCHING LTE rf front end 3g phone CIRCUIT diagram bgsf18 3G HSDPA circuits diagram BGA749N16
Contextual Info: BGA748N16 B G A 7 4 8 N 1 6 f o r 3 G / HS P A / L T E A ppl ic atio ns Suppo r t i ng B an d s 4,13 and 17 with Reference Resistor Rref= 8.2 kΩ Application Note AN239 Revision: Rev. 1.0 2010-09-02 RF and Protecti on Devi c es Edition 2010-09-02 Published by

BC264A

Abstract: BC264D IEC134
Contextual Info: 711002b G0b745T T3b IPHIN BC264A to D N-CHANNEL SILICON FIELD-EFFECT TRANSISTORS Symmetrical N-channel planar epitaxial junction field-effect transistors In a plastic TO-92 variant; in­ tended for hi-fi amplifiers and other audio-frequency equipment. QUICK REFERENCE D A TA

4G lte RF Transceiver

Abstract: RF transceiver LTE 3G HSDPA circuits diagram circuit diagram transceiver 3g BGA736L16 murata LTE duplexer band 20 lte RF Transceiver MURATA Duplexers BGA711L7 BGA735N16
Contextual Info: BGA748N16 B G A 7 4 8 N 1 6 f o r 3 G / HS P A / L T E A ppl ic atio ns Suppo r t i ng B an d s 4,13 and 17 with Reference Resistor Rref= 2.7 kΩ Application Note AN238 Revision: Rev. 1.0 2010-09-02 RF and Protecti on Devi c es Edition 2010-09-02 Published by

35606

Abstract: NR041
Contextual Info: sa NATL S E M I C O N D { D I S C R E T E } 650 1130 2T 0 . NATL SEMICOND, bsoiiao D0 3 Sb0 h dëT| DISCRETE 28C 35605 r- National Semiconductor D * o fiC NR041(NPN) low-level signal switching transistor features | 1 | package and lead coding • 40mV guaranteed V c e (sat) characteristics at

diode 2Ty

Abstract: Transistor 2TY
Contextual Info: Philips Semiconductors Product specification PowerMOS transistor GENERAL DESCRIPTION BUK466-100A QUICK REFERENCE DATA PIN MAX. UNIT Drain-source voltage Drain current DC Total power dissipation Junction temperature Drain-source on-state resistance 100 34

Contextual Info: SIEMENS BCR 400R Active Bias Controller Characteristics • Supplies stable bias current even at low battery voltage and extreme ambient temperature variation • Low voltage drop of 0.7V Application notes • Stabilizing bias current of NPN transistors and FETs from

2SK241

Contextual Info: TOSHIBA 2SK241 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE 2SK241 FM TUNER, VHF AND RF AM PLIFIER APPLICATIONS. • • • • ¿am . Low Reverse Transfer Capacitance Crss = 0.035pF Typ. NF = 1.7dB (Typ.) Low Noise Figure High Power Gain Gps - 28dB (Typ.)