D 727 TRANSISTOR Search Results

4 pin dual-emitter

Abstract: dual-emitter BFQ741 UBC869 philips MATV amplifiers
Contextual Info: Objective specification Philips Semiconductors y NPN 7 GHz wideband transistor PHILIPS INTERNATIONAL FEATURES 5L.E D ' 3 3 -0 5 BFQ741 WM 7110flEb OOMSbflO 727 • P H I N PINNING • Low distortion DESCRIPTION PIN • Gold metallization ensures excellent reliability

BFQ741

Contextual Info: Objective specification Philips Semiconductors ' '3 3 -Q5 NPN 7 GHz wideband transistor PH IL IP S I N T E R N A T I O N A L FEATURES 5L.E D • BFQ741 711GflEb ODMSbflO 727 ■ P H I N PINNING DESCRIPTION PIN • Low distortion • Gold metallization ensures

D-621-EE

Abstract: D-621-GE BROWN BOVERI brown Boveri diode D-621-EC D-621-GB BROWN BOVERI protection D-621-GC diode brown boveri 621GB
Contextual Info: -FMC BBC BROWN BOVERI Silicon Power Rectifiers Fast switching B R O W N , B O V E R I & C IE A K T IE N G E S E L L S C H A F T M A N N H E IM G eschäftsbereich H albleiter und S trom rich te r Telefon 06206 503-1, T elex 0 4 -6 5 727 Postfach 200, D -6840 Lam pertheim

Boveri voltage regulator

Abstract: brown Boveri diode DIODE BBC diode 628 bbc DIODE Transistor ge 718 DIODE BBC D BROWN BOVERI D-628-GC D-628-EB
Contextual Info: -FMC BBC BROWN BOVERI Silicon Power Rectifiers Fast switching B R O W N , B O V E R I & C IE A K T IE N G E S E L L S C H A F T M A N N H E IM G eschäftsbereich H albleiter und S trom rich te r Telefon 0620(3 5 0 3-1 , T e le x 0 4 -6 5 727 Postfach 200, D -6840 Lam pertheim

ic 7465

Abstract: HT3020B D 727 Transistor 7465 HT3020A HT3020C HT3020D Rhythm Percussion Generator CMOS drum generator
Contextual Info: HT3020A/B/C/D One Rhythm Generator Features • • • • Operating Voltage: 2.4V~5.0V Directly drive an external transistor Low stand-by current One percussion instrument • • • One demo song End-pulse output 16 pin dual-in-line package • Sound effect generators

bcw 94 b

Abstract: BF-139 F 540 NS BSY54 BCW95B BSY55
Contextual Info: CB 76 (CB 6} (CB 7) Silicon NPN transistors, general purpose (continued) Tamb= 25 °C Transistors N P N silicium , usage générai (suite) (mW) VCEO (V) h21 E VCER* h21E V c E X a min max F 139 Bc F 139 B<> F 139 B TO 18 TO 18 540 540 540 330 330 40 60 60

Contextual Info: AVANTEK 20E INC D O avantek • • • • • 7 AT-64020 Up to 4 GHz Linear Power Silicon Bipolar Transistor Features • OOO bS Sb Avantek 200 mil BeO Package High Output Power: 28.0 dBm typical Pi dBat 2.0 GHz 27.0 dBm typical Pi dBat 4.0 GHz High Gain at 1 dB Compression:

CMOS drum generator

Abstract: HT3020D 7465 holtek drum
Contextual Info: HOLTEK r r HT3020A/B/C/D One Rhythm Generator Features • • • • Operating Voltage: 2.4V~5.0V Directly drive an external transistor Low stand-by current One percussion instrument • • • One demo song End-pulse output 16 pin dual-in-line package

Contextual Info: User’s Manual 16 R8C/34W Group, R8C/34X Group, R8C/34Y Group, R8C/34Z Group User’s Manual: Hardware RENESAS MCU R8C Family / R8C/3x Series All information contained in these materials, including products and product specifications, represents information on the product at the time of publication and is subject to change by

AVANTEK transistor

Abstract: lm 3907 Avantek UA-152
Contextual Info: AVANTEK INC Q a v a 2QE D n t e • lm iU b OOQbMbQ 3 I AT-41400 Up to 6 GHz Low Noise Silicon Bipolar Transistor Chip k " P 3 .1 -Z I Avantek Chip Outline Features • • • Low Noise Figure: 1.6 dB typical at 2.0 GHz 3.0 dB typical at 4.0 GHz High Associated Gain: 14.5 dB typical at 2.0 GHz

AVANTEK transistor

Contextual Info: AVANTEK I NC 50E D • lm n b b 00Db447 AT-01600 Up to 4 GHz General Purpose Silicon Bipolar Transistor Chip T Features D I 1 ‘ . - 3 1 - 2 . 3 Avantek Chip Outline • 22.0 dBm typical Pi dB at 2.0 GHz • 10.5 dB typical Gi dB at 2.0 GHz • High Gain-Bandwidth Product: 8.0 GHz typical fr

E5EF

Abstract: 8-L24 8L20 5H24 4e86
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bc 7-25 pnp

Abstract: transistor bc 7-25 2N5245 transistor 2n3819 cross reference TO-266AA 2N3904 731 jFET Array BFR30 "cross reference" 2N5308 cross reference 266AA
Contextual Info: DISCRETE SEMICONDUCTORS IN D EX AND CROSS REFERENCE Industry Number 1N914 1N4148 1N4150 1N5229 1N5230 Type Diode Diode Diode Zener Zener Pinning 2 3 A A A A A NC NC NC NC K K K K NC K 7-29 7-29 7-29 7-30 7-30 A A A A A NC NC NC NC NC K K K K K 7-30 7-30 7-30

hengstler 890 manual

Abstract: hengstler 890 hengstler 890 counter hengstler, 890 signo 727 Hengstler relay 890 Hengstler Hengstler counter 890 signo 727 operation manual Hengstler counter
Contextual Info: Betriebsanleitung Operating instructions signo 727.1 Positionsanzeige mit/ohne Grenzwerte Position-Indicator with/without limit values Inhaltsverzeichnis Contents 1. 2. 2.1. 2.2. 2.2.1 2.2.2 2.3. 3. 3.1. 3.2. 3.3. 4. 4.1 4.2 4.3 4.4 5. 6. 7. 7.1. 7.2. 7.3

Avantek, Inc

Abstract: avantek Avantek amplifier AVANTEK transistor AT-01600 Avantek amplifier 140 avantek microwave Avantek, Inc. AT-01600-GP4 Avantek S
Contextual Info: AVANTEK INC SOE D • 1 1 4 1 Tbb 000b447 AT-01600 ' Up to 4 GHz General Purpose Silicon Bipolar Transistor1 Chip . 1 • Features ' • ‘ . T - i • • • □ ■ I -2 .3 Avantek Chip Outline 22.0 dBm typical Pi dB at 2.0 GHz 10.5 dB typical Gi dB at 2.0 GHz

avantek

Abstract: AT-42035 Avantek, Inc 321E T-31-21 8v-312 Avantek amplifier 8 12 GHz Avantek amplifier 12.5 sa AVANTEK oscillator
Contextual Info: AVANTEK Q SQE D I NC avantek • i m n t t AT-42035 Up to 6 GHz Medium Power Silicon Bipolar Transistor Avantek 35 micro-X Package Features • • • • • OQObMöT 5 High Output Power: 21.0 dBm typical Pi dB at 2.0 GHz 20.5 dBm typical Pt dB at 4.0 GHz

2SC1892

Abstract: E JHAA AC42C
Contextual Info: 2/ U D > N P N = « f f i l b « . W h 5 > 2; ^ SILICON NPN TRIPLE DIFFUSED MESA TRANSISTOR O * ?- y V o Color TV Horizontal Outp u t A p p l ications • A 2 SC 1892 V CB 0 = 1 5 0 0 V • V cœ eat = 5 V (Typ.) ; -X -í y ; l&ZfcÆfè MAXIMUM RATINGS CHARACTERISTIC

Contextual Info: g £ SOLID STATE 3875081 ~ G E SOLID Öl DE | 3ö?SGöl D017TÖ7 1 STATE 01E 17987 D _ !_ !_ !_ Signal Transistors MPS-A13, MPS-A14 T ,2 <7-27 Silicon Darlington Transistors TO-92 T h e G E /R C A M P S -A 1 3 a n d A 1 4 a re p la n a r e p ita x ia l p assivate d N PN silico n D a rlin g to n tra n s is to rs d e sig n e d fo r p re a m p lifie r in p u t a p p lic a tio n s w h e re h ig h im p e d a n c e is a

BFW61

Abstract: FET BFW61 N CHANNEL FET BFW61 transistor TO-72 727 Transistor power values VDS-15 ad357
Contextual Info: J BFW61 '- N-CHANNEL SILICON FET Symmetrical n-channel silicon planar epitaxial junction field-effect transistor in a TO-72 metal envelope with the shield lead connected to the case. The transistor is designed for general purpose amplifiers.

BFW61

Contextual Info: BFW61 J V N-CHANNEL SILICON FET Symmetrical n-channel silicon planar epitaxial junction field-effect transistor in a TO-72 metal envelope with the shield lead connected to the case. The transistor is designed fo r general purpose amplifiers. QUICK REFERENCE DATA

Contextual Info: Ordering num ber:EN 2 4 3 0 2SD1883 NPN Triple Diffused Planar Silicon Transistor SAiYO Color TV Horizontal Deflection , Output Applications i Applications . Color TV horizontal deflection output . Color display horizontal deflection output Features . High speed tf=100ns

marking cev

Contextual Info: Central" CZTUX87 Semiconductor Corp. SURFACE MOUNT HIGH VOLTAGE NPN SILICON POWER TRANSISTOR DESCRIPTION: POWER The CENTRAL SEMICONDUCTOR CZTUX87 type is a NPN Silicon Power Transistor epoxy molded in a surface mount package, designed for high voltage switching applications.

Contextual Info: Power Transistors 2SD1457, 2SD1457A 2SD1457, 2SD1457A Silicon NPN Triple-Diffused Planar Darlington Type Power A m plifier • Features • High DC current gain Iif e • High collector-base voltage (V cbo ) • “Full Pack” package for simplified mounting on a heat sink with one

2SD1956

Abstract: 2SD1957 ld7a
Contextual Info: V 7. $ /Transistors 2SD1957 2SD1957 NPN v ' ; = i > h -7 > y 'z$ M J M i Freq. Power Amp. Triple Diffused Planar NPN Silicon Transistor Sir>4Vi.V^i-r K ~7> • W Fi'+ jilll/D im e nsio n s Unit: mm • *8:1: 1) hFE : hFE= 3 0 0 (Typ.)o 2) Vce (sat) 'o V ce (sat)= 0.2V (Typ.)