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    D 727 TRANSISTOR Search Results

    D 727 TRANSISTOR Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    D 727 TRANSISTOR Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    ic 7465

    Abstract: HT3020B D 727 Transistor 7465 HT3020A HT3020C HT3020D Rhythm Percussion Generator CMOS drum generator
    Text: HT3020A/B/C/D One Rhythm Generator Features • • • • Operating Voltage: 2.4V~5.0V Directly drive an external transistor Low stand-by current One percussion instrument • • • One demo song End-pulse output 16 pin dual-in-line package • Sound effect generators


    Original     		PDF HT3020A/B/C/D HT3020A/B/C/D HT3020A HT3020B HT3020C HT3020D ic 7465 HT3020B D 727 Transistor 7465 HT3020A HT3020C HT3020D Rhythm Percussion Generator CMOS drum generator

    Untitled

    Abstract: No abstract text available
    Text: User’s Manual 16 R8C/34W Group, R8C/34X Group, R8C/34Y Group, R8C/34Z Group User’s Manual: Hardware RENESAS MCU R8C Family / R8C/3x Series All information contained in these materials, including products and product specifications, represents information on the product at the time of publication and is subject to change by


    Original     		PDF R8C/34W R8C/34X R8C/34Y R8C/34Z o2-8175-9670 R01UH0063EJ0110

    E5EF

    Abstract: 8-L24 8L20 5H24 4e86
    Text:                                                        


    Original     		PDF S3C80F7/C80F9/C80G7/C80G9 32-pin 42-pin 44pin E5EF 8-L24 8L20 5H24 4e86

    hengstler 890 manual

    Abstract: hengstler 890 hengstler 890 counter hengstler, 890 signo 727 Hengstler relay 890 Hengstler Hengstler counter 890 signo 727 operation manual Hengstler counter
    Text: Betriebsanleitung Operating instructions signo 727.1 Positionsanzeige mit/ohne Grenzwerte Position-Indicator with/without limit values Inhaltsverzeichnis Contents 1. 2. 2.1. 2.2. 2.2.1 2.2.2 2.3. 3. 3.1. 3.2. 3.3. 4. 4.1 4.2 4.3 4.4 5. 6. 7. 7.1. 7.2. 7.3


    Original     		PDF D-78550 D-78554 hengstler 890 manual hengstler 890 hengstler 890 counter hengstler, 890 signo 727 Hengstler relay 890 Hengstler Hengstler counter 890 signo 727 operation manual Hengstler counter

    4 pin dual-emitter

    Abstract: dual-emitter BFQ741 UBC869 philips MATV amplifiers
    Text: Objective specification Philips Semiconductors y NPN 7 GHz wideband transistor PHILIPS INTERNATIONAL FEATURES 5L.E D ' 3 3 -0 5 BFQ741 WM 7110flEb OOMSbflO 727 • P H I N PINNING • Low distortion DESCRIPTION PIN • Gold metallization ensures excellent reliability


    OCR Scan     		PDF 33-Q5 BFQ741 7110AEb OT172 OT172A1 UBC869 OT172A1. 4 pin dual-emitter dual-emitter BFQ741 UBC869 philips MATV amplifiers

    BFQ741

    Abstract: No abstract text available
    Text: Objective specification Philips Semiconductors ' '3 3 -Q5 NPN 7 GHz wideband transistor PH IL IP S I N T E R N A T I O N A L FEATURES 5L.E D • BFQ741 711GflEb ODMSbflO 727 ■ P H I N PINNING DESCRIPTION PIN • Low distortion • Gold metallization ensures


    OCR Scan     		PDF BFQ741 7110A5b OT172 OT172A1 OT172A1. BFQ741

    D-621-EE

    Abstract: D-621-GE BROWN BOVERI brown Boveri diode D-621-EC D-621-GB BROWN BOVERI protection D-621-GC diode brown boveri 621GB
    Text: -FMC BBC BROWN BOVERI Silicon Power Rectifiers Fast switching B R O W N , B O V E R I & C IE A K T IE N G E S E L L S C H A F T M A N N H E IM G eschäftsbereich H albleiter und S trom rich te r Telefon 06206 503-1, T elex 0 4 -6 5 727 Postfach 200, D -6840 Lam pertheim


    OCR Scan     		PDF D-6840 D-621 D-621-EE D-621-GE BROWN BOVERI brown Boveri diode D-621-EC D-621-GB BROWN BOVERI protection D-621-GC diode brown boveri 621GB

    Boveri voltage regulator

    Abstract: brown Boveri diode DIODE BBC diode 628 bbc DIODE Transistor ge 718 DIODE BBC D BROWN BOVERI D-628-GC D-628-EB
    Text: -FMC BBC BROWN BOVERI Silicon Power Rectifiers Fast switching B R O W N , B O V E R I & C IE A K T IE N G E S E L L S C H A F T M A N N H E IM G eschäftsbereich H albleiter und S trom rich te r Telefon 0620(3 5 0 3-1 , T e le x 0 4 -6 5 727 Postfach 200, D -6840 Lam pertheim


    OCR Scan     		PDF D-6840 D-628 Boveri voltage regulator brown Boveri diode DIODE BBC diode 628 bbc DIODE Transistor ge 718 DIODE BBC D BROWN BOVERI D-628-GC D-628-EB

    bcw 94 b

    Abstract: BF-139 F 540 NS BSY54 BCW95B BSY55
    Text: CB 76 (CB 6} (CB 7) Silicon NPN transistors, general purpose (continued) Tamb= 25 °C Transistors N P N silicium , usage générai (suite) (mW) VCEO (V) h21 E VCER* h21E V c E X a min max F 139 Bc F 139 B<> F 139 B TO 18 TO 18 540 540 540 330 330 40 60 60


    OCR Scan     		PDF

    Untitled

    Abstract: No abstract text available
    Text: AVANTEK 20E INC D O avantek • • • • • 7 AT-64020 Up to 4 GHz Linear Power Silicon Bipolar Transistor Features • OOO bS Sb Avantek 200 mil BeO Package High Output Power: 28.0 dBm typical Pi dBat 2.0 GHz 27.0 dBm typical Pi dBat 4.0 GHz High Gain at 1 dB Compression:


    OCR Scan     		PDF AT-64020

    CMOS drum generator

    Abstract: HT3020D 7465 holtek drum
    Text: HOLTEK r r HT3020A/B/C/D One Rhythm Generator Features • • • • Operating Voltage: 2.4V~5.0V Directly drive an external transistor Low stand-by current One percussion instrument • • • One demo song End-pulse output 16 pin dual-in-line package


    OCR Scan     		PDF HT3020A/B/C/D HT3020A/B/C/D HT3020A 240Kn HT3020B HT3020C HT3020D HT3020A, CMOS drum generator HT3020D 7465 holtek drum

    AVANTEK transistor

    Abstract: lm 3907 Avantek UA-152
    Text: AVANTEK INC Q a v a 2QE D n t e • lm iU b OOQbMbQ 3 I AT-41400 Up to 6 GHz Low Noise Silicon Bipolar Transistor Chip k " P 3 .1 -Z I Avantek Chip Outline Features • • • Low Noise Figure: 1.6 dB typical at 2.0 GHz 3.0 dB typical at 4.0 GHz High Associated Gain: 14.5 dB typical at 2.0 GHz


    OCR Scan     		PDF AT-41400 AVANTEK transistor lm 3907 Avantek UA-152

    AVANTEK transistor

    Abstract: No abstract text available
    Text: AVANTEK I NC 50E D • lm n b b 00Db447 AT-01600 Up to 4 GHz General Purpose Silicon Bipolar Transistor Chip T Features D I 1 ‘ . - 3 1 - 2 . 3 Avantek Chip Outline • 22.0 dBm typical Pi dB at 2.0 GHz • 10.5 dB typical Gi dB at 2.0 GHz • High Gain-Bandwidth Product: 8.0 GHz typical fr


    OCR Scan     		PDF 00Db447 AT-01600 92yim 310-371-8717or AVANTEK transistor

    bc 7-25 pnp

    Abstract: transistor bc 7-25 2N5245 transistor 2n3819 cross reference TO-266AA 2N3904 731 jFET Array BFR30 "cross reference" 2N5308 cross reference 266AA
    Text: DISCRETE SEMICONDUCTORS IN D EX AND CROSS REFERENCE Industry Number 1N914 1N4148 1N4150 1N5229 1N5230 Type Diode Diode Diode Zener Zener Pinning 2 3 A A A A A NC NC NC NC K K K K NC K 7-29 7-29 7-29 7-30 7-30 A A A A A NC NC NC NC NC K K K K K 7-30 7-30 7-30


    OCR Scan     		PDF 1N914 1N4148 1N4150 1N5229 1N5230 1N5231 1N5232 1N5233 1N5234 1N5235 bc 7-25 pnp transistor bc 7-25 2N5245 transistor 2n3819 cross reference TO-266AA 2N3904 731 jFET Array BFR30 "cross reference" 2N5308 cross reference 266AA

    Avantek, Inc

    Abstract: avantek Avantek amplifier AVANTEK transistor AT-01600 Avantek amplifier 140 avantek microwave Avantek, Inc. AT-01600-GP4 Avantek S
    Text: AVANTEK INC SOE D • 1 1 4 1 Tbb 000b447 AT-01600 ' Up to 4 GHz General Purpose Silicon Bipolar Transistor1 Chip . 1 • Features ' • ‘ . T - i • • • □ ■ I -2 .3 Avantek Chip Outline 22.0 dBm typical Pi dB at 2.0 GHz 10.5 dB typical Gi dB at 2.0 GHz


    OCR Scan     		PDF AT-01600 AT-01600 Avantek, Inc avantek Avantek amplifier AVANTEK transistor Avantek amplifier 140 avantek microwave Avantek, Inc. AT-01600-GP4 Avantek S

    avantek

    Abstract: AT-42035 Avantek, Inc 321E T-31-21 8v-312 Avantek amplifier 8 12 GHz Avantek amplifier 12.5 sa AVANTEK oscillator
    Text: AVANTEK Q SQE D I NC avantek • i m n t t AT-42035 Up to 6 GHz Medium Power Silicon Bipolar Transistor Avantek 35 micro-X Package Features • • • • • OQObMöT 5 High Output Power: 21.0 dBm typical Pi dB at 2.0 GHz 20.5 dBm typical Pt dB at 4.0 GHz


    OCR Scan     		PDF AT-42035 AT-42035 microwave64 avantek Avantek, Inc 321E T-31-21 8v-312 Avantek amplifier 8 12 GHz Avantek amplifier 12.5 sa AVANTEK oscillator

    2SC1892

    Abstract: E JHAA AC42C
    Text: 2/ U D > N P N = « f f i l b « . W h 5 > 2; ^ SILICON NPN TRIPLE DIFFUSED MESA TRANSISTOR O * ?- y V o Color TV Horizontal Outp u t A p p l ications • A 2 SC 1892 V CB 0 = 1 5 0 0 V • V cœ eat = 5 V (Typ.) ; -X -í y ; l&ZfcÆfè MAXIMUM RATINGS CHARACTERISTIC


    OCR Scan     		PDF 2sc1892 AC42C 2SC1892 E JHAA AC42C

    Untitled

    Abstract: No abstract text available
    Text: g £ SOLID STATE 3875081 ~ G E SOLID Öl DE | 3ö?SGöl D017TÖ7 1 STATE 01E 17987 D _ !_ !_ !_ Signal Transistors MPS-A13, MPS-A14 T ,2 <7-27 Silicon Darlington Transistors TO-92 T h e G E /R C A M P S -A 1 3 a n d A 1 4 a re p la n a r e p ita x ia l p assivate d N PN silico n D a rlin g to n tra n s is to rs d e sig n e d fo r p re a m p lifie r in p u t a p p lic a tio n s w h e re h ig h im p e d a n c e is a


    OCR Scan     		PDF D017T MPS-A13, MPS-A14 MPS-A13 MPS-A14 100kHz) 100kQ 300ps

    BFW61

    Abstract: FET BFW61 N CHANNEL FET BFW61 transistor TO-72 727 Transistor power values VDS-15 ad357
    Text: J BFW61 '- N-CHANNEL SILICON FET Symmetrical n-channel silicon planar epitaxial junction field-effect transistor in a TO-72 metal envelope with the shield lead connected to the case. The transistor is designed for general purpose amplifiers.


    OCR Scan     		PDF BFW61 200/iA BFW61 FET BFW61 N CHANNEL FET BFW61 transistor TO-72 727 Transistor power values VDS-15 ad357

    BFW61

    Abstract: No abstract text available
    Text: BFW61 J V N-CHANNEL SILICON FET Symmetrical n-channel silicon planar epitaxial junction field-effect transistor in a TO-72 metal envelope with the shield lead connected to the case. The transistor is designed fo r general purpose amplifiers. QUICK REFERENCE DATA


    OCR Scan     		PDF BFW61 btj53T31 357T2 BFW61

    Untitled

    Abstract: No abstract text available
    Text: Ordering num ber:EN 2 4 3 0 2SD1883 NPN Triple Diffused Planar Silicon Transistor SAiYO Color TV Horizontal Deflection , Output Applications i Applications . Color TV horizontal deflection output . Color display horizontal deflection output Features . High speed tf=100ns


    OCR Scan     		PDF 2SD1883 100ns 2039D 2207TA 2430-l/3 5707b

    marking cev

    Abstract: No abstract text available
    Text: Central" CZTUX87 Semiconductor Corp. SURFACE MOUNT HIGH VOLTAGE NPN SILICON POWER TRANSISTOR DESCRIPTION: POWER The CENTRAL SEMICONDUCTOR CZTUX87 type is a NPN Silicon Power Transistor epoxy molded in a surface mount package, designed for high voltage switching applications.


    OCR Scan     		PDF CZTUX87 OT-223 100mA, 200mA, 14-November marking cev

    Untitled

    Abstract: No abstract text available
    Text: Power Transistors 2SD1457, 2SD1457A 2SD1457, 2SD1457A Silicon NPN Triple-Diffused Planar Darlington Type Power A m plifier • Features • High DC current gain Iif e • High collector-base voltage (V cbo ) • “Full Pack” package for simplified mounting on a heat sink with one


    OCR Scan     		PDF 2SD1457, 2SD1457A 2SD1457

    2SD1956

    Abstract: 2SD1957 ld7a
    Text: V 7. $ /Transistors 2SD1957 2SD1957 NPN v ' ; = i > h -7 > y 'z$ M J M i Freq. Power Amp. Triple Diffused Planar NPN Silicon Transistor Sir>4Vi.V^i-r K ~7> • W Fi'+ jilll/D im e nsio n s Unit: mm • *8:1: 1) hFE : hFE= 3 0 0 (Typ.)o 2) Vce (sat) 'o V ce (sat)= 0.2V (Typ.)


    OCR Scan     		PDF 2SD1957 T0-220 2SD1956 TQ-220FP fS14/Electrical 10MHz 2SD1956 2SD1957 ld7a