D 595 TRANSISTOR Search Results

IRFM9240

Abstract: JANTX2N7237 JANTXV2N7237
Contextual Info: PD - 90497E POWER MOSFET THRU-HOLE TO-254AA IRFM9240 JANTX2N7237 JANTXV2N7237 REF:MIL-PRF-19500/595 200V, P-CHANNEL HEXFET MOSFET TECHNOLOGY Product Summary Part Number RDS(on) I D IRFM9240 0.51Ω -11A HEXFET® MOSFET technology is the key to International

IRFN9240

Abstract: JANTX2N7237U JANTXV2N7237U
Contextual Info: PD - 91554D POWER MOSFET SURFACE MOUNT SMD-1 IRFN9240 JANTX2N7237U JANTXV2N7237U REF:MIL-PRF-19500/595 200V, P-CHANNEL HEXFET MOSFET TECHNOLOGY Product Summary Part Number IRFN9240 RDS(on) I D 0.51Ω -11A HEXFET® MOSFET technology is the key to International

IRFN9140

Abstract: JANTX2N7236U JANTXV2N7236U
Contextual Info: PD - 91553D POWER MOSFET SURFACE MOUNT SMD-1 IRFN9140 JANTX2N7236U JANTXV2N7236U REF:MIL-PRF-19500/595 100V, P-CHANNEL HEXFET MOSFET TECHNOLOGY Product Summary Part Number IRFN9140 RDS(on) I D 0.20Ω -18A HEXFET® MOSFET technology is the key to International

IRFM9140

Abstract: JANTX2N7236 JANTXV2N7236
Contextual Info: PD - 90495E POWER MOSFET THRU-HOLE TO-254AA IRFM9140 JANTX2N7236 JANTXV2N7236 REF:MIL-PRF-19500/595 100V, P-CHANNEL HEXFET MOSFET TECHNOLOGY Product Summary Part Number IRFM9140 RDS(on) I D 0.20Ω -18A HEXFET® MOSFET technology is the key to International

Contextual Info: 12-Bit, 41 MSPS Monolithic A/D Converter AD9042 ANALOG DEVICES FEATURES 41 MSPS Minimum Sample Rate 80 dB Spurious-Free Dynamic Range 595 mW Power Dissipation Single +5 V Supply On-Chip T/H and Reference Twos Complement Output Format CMOS-Compatible Output Levels

Contextual Info: ANALOG DEVICES 1 2-Bit, 41 MSPS Monolithic A/D Converter AD9042 FEATURES 41 MSPS Minimum Sample Rate 80 dB Spurious-Free Dynamic Range 595 mW Power Dissipation Single +5 V Supply On-Chip T/H and Reference Twos Complement Output Format CMOS-Compatible Output Levels

9042AST

Contextual Info: 12-Bit, 41 WISPS Monolithic A/D Converter AD9042 ANALOG DEVICES F EA T U R ES 41 M S P S M inim um Sam ple Rate 80 dB Spurious-Free Dynam ic Range 595 m W Pow er D issipation Single +5 V Supply On-Chip T/H and Reference FUNCTIONAL BLOCK DIAGRAM A V CC DVCC

Contextual Info: 8 -3 2 U N C-2A DIM MILLIMETER A 5.71 H 1 1.52 26.16 J K L .38R 19.05 o 9.52 DIA 0.13 1.78 4.06 15.11 2.92 LD B C D E F G TOL INCHES .13 .13 .02 .13 .13 MAX .38 .225 .375 DIA .005 .070 .165 .595 .115 .005 .005 .001 .005 .005 MAX .015 .13 .38 5' .060 1.030

Contextual Info: PULSE WIDTH MODULATOR CONTROL CIRCUIT W IT H O U T P U T C O N T R O L F O R S -E or P -P O P E R A T IO N D ESCRIPTION CS-593 CS-593, CS-594 and CS-595 incorporate all the functions required in the construction of a PWM power supply control circuit. The CS-593 contains

21E sot

Abstract: IC 3263 1303 SOT23
Contextual Info: M an A M P com pany Bipolar High fT Low Voltage NPN Silicon Transistors MA4T3243 Series V3.00 Case Styles Features • D esigned for 3-5 Volt O peration • U seable to 6 GHz in Oscillators • U seable for Low Noise, Low Voltage Driver Amplifiers Through 3 GHz

sot23 1303

Abstract: IC 3263 NPN bipolar junction transistors max hfe 2000 1272 hybrid 1303 SOT23 MA4T324335
Contextual Info: Bipolar High fT Low Voltage NPN Silicon Transistors MA4T3243 Series V3.00 Case Styles Features ● ● ● ● ● ● ● Designed for 3-5 Volt Operation Useable to 6 GHz in Oscillators Useable for Low Noise, Low Voltage Driver Amplifiers Through 3 GHz Useful for Class C Amplifiers

2N6665

Abstract: MA42001-509 2N6665-509 MA42181-510 2n5054 RF NPN POWER TRANSISTOR C 10-50 GHZ 2N2857 Model MA42001 ma42 transistor 2N3953
Contextual Info: an A M P com pany General Purpose Low Noise Bipolar Transistors Features Case Styles • Low Noise Through 1.5 GHz • Hermetic Package • Can Be Screened to JAN, JANTX, JANTXV Levels Description The series of Silicon NPN bipolar transistors are designed

MA42181-510

Abstract: 2N5054 2N6665-509
Contextual Info: M a n A M P icom pany General Purpose Low Noise Bipolar Transistors V3.00 Case Styles Features • Low Noise Through 1.5 GHz • Hermetic Package • Can Be Screened to JAN, JANTX, JANTXV Levels Description The series of Silicon NPN bipolar transistors are designed

Contextual Info: an A M P com pany Bipolar High fT Low Voltage NPN Silicon Transistors MA4T3243 Series V3.00 Case Styles Features • Designed for 3-5 Volt Operation • Useable to 6 GHz in Oscillators • Useable for Low Noise, Low Voltage Driver Amplifiers Through 3 GHz

MA4T636500

Abstract: MA4T6365
Contextual Info: M an A M P com pany Low Operating Voltage, High FT Bipolar Microwave Transistors MA4T6365 V2.00 Case Styles Features • • • • • D esigned for Battery Operation fT to 10 GHz Low Voltage Oscillator and Amplifier Low Phase Noise and Noise Figure Hermetic and Surface Mount Packages and

TRANSISTOR K 1507

Contextual Info: Preliminary Specifications 3 Volt, Low Noise High fT Silicon Transistor MA4T6310 Series V 2.00 SOT-23 Features ● ● ● ● ● 1.5 dB Noise Figure at 0.5 mA 13 dB Gain at 1 GHz 14 GHz fT Low Cost Plastic Package Available on Tape and Reel Description The MA4T6310 series of low current, high fT silicon NPN

MA4T636533

Abstract: transistor sot-23 2613 MA4T6365
Contextual Info: Low Operating Voltage, High FT Bipolar Microwave Transistors MA4T6365 V2.00 Case Styles Features ● ● ● ● ● ● Designed for Battery Operation fT to 10 GHz Low Voltage Oscillator and Amplifier Low Phase Noise and Noise Figure Hermetic and Surface Mount Packages and

Contextual Info: VMÂCQM Preliminary Specifications m an AM P company 3 Volt, Low Noise High fT Silicon Transistor MA4T6310 Series V1.A SOT-23 Features • • • • • 1.5 dB Noise Figure at 0.5 mA 13 dB Gain at 1 GHz 14 GHz fT Low Cost Plastic Package Available on Tape and Reel

TRANSISTOR K 1507

Contextual Info: Preliminary Specifications an A M P company 3 Volt, Low Noise High fT Silicon Transistor MA4T6310 Series V 2 .00 Features • • • • • SOT-23 1.5 dB Noise Figure at 0.5 mA 13 dB Gain at 1 GHz 14 GHz fT Low Cost Plastic Package Available on Tape and Reel

Contextual Info: MA4T243 Series M/A-COM Silicon Bipolar High fT Low Noise Medium Power 12 Volt Transistors Features • • • • • Case Style Low Phase Noise Oscillator Transistor 200 mW Driver Amplifier Transistor Operation to 8 GHz Available as Chip Available in Hermetic Surface Mount Packages

mount chip transistor 332

Abstract: SOT-23 TRANSISTOR 548 MA4T64500
Contextual Info: Silicon Bipolar High fT Low Noise Microwave Transistor MA4T645 Series MA4T645 Series Silicon Bipolar High fT Low Noise Microwave Transistors Features • • • • • • • Case Style fT to 9 GHz Low Noise Figure High Associated Gain Hermetic and Surface Mount Packages Available

b 595 transistor

Abstract: transistor 5 Amp 700 volt MA4T24300 transistor b 595 MA4T24335
Contextual Info: Silicon Bipolar High fT Low Noise Medium Power 12 Volt Transistor MA4T243 Series MA4T243 Series Silicon Bipolar High fT Low Noise Medium Power 12 Volt Transistors Features • • • • • Case Style Low Phase Noise Oscillator Transistor 200 mW Driver Amplifier Transistor

MA4TF50

Abstract: MA4TF5005 RS 434 071 x-band transistor transistor mesfet
Contextual Info: General Purpose 0.5 µm N-Type GaAs MESFET Transistors MA4TF50 Series V3.00 Case Styles Features ● ● ● ● ● Low Noise Figure High Associated Gain High Maximum Available Gain Designed for Battery Operation Useful to Ku-Band Description The MA4TF50 is an n-type GaAs depletion mode Metal

t636

Abstract: 557 sot143 T636 A S 223 858 015 636
Contextual Info: an A M P com pany Low Operating Voltage, High FT Bipoiar Microwave Transistors MA4T6365 V2.00 Case Styles Features • • • • • Designed for Battery Operation fT to 10 GHz Low Voltage Oscillator and Amplifier Low Phase Noise and Noise Figure Hermetic and Surface Mount Packages and