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    D 4204 TRANSISTOR Search Results

    D 4204 TRANSISTOR Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    D 4204 TRANSISTOR Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    TA17412

    Abstract: irf630 irf630 equivalent IRF632 RF1S630SM RF1S630SM9A TB334 IRF630 p IRF630 INTERSIL
    Text: IRF630, RF1S630SM Data Sheet 9A, 200V, 0.400 Ohm, N-Channel Power MOSFETs These are N-Channel enhancement mode silicon gate power field effect transistors. They are advanced power MOSFETs designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche mode


    Original     		PDF IRF630, RF1S630SM TA17412. 1578f TA17412 irf630 irf630 equivalent IRF632 RF1S630SM RF1S630SM9A TB334 IRF630 p IRF630 INTERSIL

    AAbZ TRANSISTOR 5 PIN

    Abstract: ULTRA HIGH SPEED FREQUENCY DIVIDER MAX4200 MAX4200ESA MAX4205 maxim dallas 2501
    Text: 19-1338; Rev 3; 3/07 Ultra-High-Speed, Low-Noise, Low-Power, SOT23 Open-Loop Buffers _Features The MAX4200–MAX4205 are ultra-high-speed, openloop buffers featuring high slew rate, high output current, low noise, and excellent capacitive-load-driving


    Original     		PDF MAX4200 MAX4205 MAX4200/MAX4201/MAX4202 MAX4203/MAX4204/MAX4205 MAX4201/MAX4204 MAX4202/MAX4205 MAX4200/MAX4203 780MHz AAbZ TRANSISTOR 5 PIN ULTRA HIGH SPEED FREQUENCY DIVIDER MAX4200ESA maxim dallas 2501

    Untitled

    Abstract: No abstract text available
    Text: 19-1338; Rev 3; 3/07 Ultra-High-Speed, Low-Noise, Low-Power, SOT23 Open-Loop Buffers _Features The MAX4200–MAX4205 are ultra-high-speed, openloop buffers featuring high slew rate, high output current, low noise, and excellent capacitive-load-driving


    Original     		PDF MAX4200â MAX4205 MAX4200/MAX4201/MAX4202 MAX4203/MAX4204/MAX4205 MAX4201/MAX4204 MAX4202/MAX4205 MAX4200/MAX4203

    stk404-130s

    Abstract: STK404-100S STK404-120S EN7733 12v 100w TRANSISTOR AUDIO AMPLIFIER STK4040 100W sub amplifier STK404-130S equivalent
    Text: Ordering number : EN7733 Thick-Film Hybrid IC STK404-120S One-Channel Class AB Audio Power Amplifier IC 80W Overview The STK404-000S series products are audio power amplifier hybrid ICs that consist of optimally-designed discrete component power amplifier circuits that have been miniaturized using SANYO’s unique insulated metal substrate


    Original     		PDF EN7733 STK404-120S STK404-000S 20kHz ITF02233 ITF02234 ITF02360 ITF02236 stk404-130s STK404-100S STK404-120S EN7733 12v 100w TRANSISTOR AUDIO AMPLIFIER STK4040 100W sub amplifier STK404-130S equivalent

    D 4206 TRANSISTOR

    Abstract: 4204 4206 ANALOG MULTIPLIER-DIVIDER burr-brown Model 4206 4302 burr brown ic 4206 4302 multifunction converter D 4204 TRANSISTOR Burr-Brown 4206 IN4154 EZ88
    Text: I 4204 4206 BURR-BROWN ANALOG MULTIPLIER-DIVIDER FEATURES • HIGH T O T A L A C C U R AC Y 0.25% and 0.5% max, no external trims 0 .1% and 0.2% typ. with external trims • LO W T E M P E R A T U R E D R IFT 100ppm /°C • S M A LL PACKAGE Dual-in-line metal or plastic


    OCR Scan     		PDF 100ppm/Â D 4206 TRANSISTOR 4204 4206 ANALOG MULTIPLIER-DIVIDER burr-brown Model 4206 4302 burr brown ic 4206 4302 multifunction converter D 4204 TRANSISTOR Burr-Brown 4206 IN4154 EZ88

    4206J

    Abstract: Burr-Brown 4206
    Text: ANALOG MULTIPLIER-DIVIDER FEATURES bandwidth at low cost. They use the log/antilog technique and are internally laser-trimmed. Multiply mode accuracies of 0.25% and 0.5% max are guaran­ teed with no external components. By following the external trim procedure described in the M ultiplica­


    OCR Scan     		PDF 100ppm 000VDC 4206J Burr-Brown 4206

    4206J

    Abstract: No abstract text available
    Text: BURR-BROW N 4204 4206 ANALOG MULTIPLIER-DIVIDER bandwidth at low cost. They use the log/ antilog technique and are internally laser-trimmed. Multiply mode accuracies of 0.25% and 0.5% max are guaran­ teed with no external components. By following the external trim procedure described in the Multiplica­


    OCR Scan     		PDF 100ppm/Â 17313U5 DQlbMt43 4206J

    x4202

    Abstract: ns 4203 AX4202 X4202 s 4200E
    Text: >kiyixi>ki 19-1338; Rev 1; 10/98 U l t r a - H i g h - S p e e d , L o w -Noi se, Low -Pow er, S O T 2 3 O p e n - L o o p Buf f er s _ F e a t u r e s ♦ 2.2mA Supply Current The MAX4200-MAX4205 use a proprietary architecture to achieve up to 780M H z -3dB b a n d w id th , 280M H z


    OCR Scan     		PDF 780MHz MAX4201/MAX4202) 280MHz MAX4200/MAX4203) AX4200-M AX4205 x4202 ns 4203 AX4202 X4202 s 4200E

    2N7074

    Abstract: No abstract text available
    Text: 2N7074 fTSìliconix In c o r p o r a te d N-Channel Enhancement Mode Transistor TO-254AA Hermetic Package TOP VIEW PRODUCT SUMMARY V BR DSS fDS(ON) •d (V) (ii) (A) 500 0.85 7.0 2 SOURCE 3 GATE Case Isolated ABSOLUTE MAXIMUM RATINGS (Tc = 25 C Unless Otherwise Noted)


    OCR Scan     		PDF 2N7074 O-254AA 10peration 2N7074

    2N7074

    Abstract: No abstract text available
    Text: 33E D SILICONIX INC fCT'S i ficonix • 62SM73S QOlbDEb 5 « S I X 2N7074 incorporated N-Channel Enhancement Mode Transistor TO-254AA Hermetic Package TOP VIEW o PRODUCT SUMMARY V BR|DSS "W* Id (A 500 0,85 7.0 1 DRAIN 2 SOURCE 3 GATE 1 2 3 Case Isolated


    OCR Scan     		PDF 62SM73S 2N7074 O-254AA THERMG01ba21 T-39-13

    Untitled

    Abstract: No abstract text available
    Text: RFP2N20 interdi Data Sheet J u ly 1999 F ile N u m b e r 2 8 8 1 .2 Features 2A, 200V, 3.500 Ohm, N-Channel Power MOSFET • 2A .200V These are N-Channel enhancement mode silicon gate power field effect transistors designed for applications such as switching regulators, switching converters, motor drivers,


    OCR Scan     		PDF RFP2N20 TA09289. RFP2N20 O-220AB O-220AB AN7254 AN7260

    NDS9955

    Abstract: No abstract text available
    Text: Na t i o n a l May 1996 Sem iconductor" NDS9955 Dual N-Channel Enhancement Mode Field Effect Transistor General Description Features These N-Channel enhancement mode power field effect transistors are produced using National's proprietary, high cell density, DMOS technology.


    OCR Scan     		PDF NDS9955 bSD1130 NDS9955

    Untitled

    Abstract: No abstract text available
    Text: Operational Amplifiers RC4559 RC4559 High-Gain Dual Operational Amplifier These amplifiers feature guaranteed ac perform­ ance which far exceeds that o f the 741-type amplifiers. The specially designed low-noise input transistors allow the 4559 to be used in


    OCR Scan     		PDF RC4559 741-type 741-type 600ft RM4559 400Hz

    4559 raytheon

    Abstract: RC4559N Stereo Tone Control
    Text: RC4559 Operational Amplifiers RC4559 High-Gain Dual Operational Amplifier These amplifiers feature guaranteed ac perform­ ance which far exceeds that of the 741-type amplifiers. The specially designed low-noise input transistors allow the 4559 to be used in


    OCR Scan     		PDF RC4559 RC4559 RM4559 741-type 400Hz 750pF 4559 raytheon RC4559N Stereo Tone Control

    4221 motorola transistor

    Abstract: MOTOROLA L 358 ADC 808
    Text: 6367254 MOTOROLA SC CXSTRS/R F MOTOROLA 89D 7 9 9 6 8 Dn ~ - 3 3 - 3 5 ' A Order this data sheet by MJ100BX120/D a^ ^ | t3t7a^ DD7-HWS Q f SEMICONDUCTOR TECHNICAL DATA NPN Silicon Power Transistor Module M J100BX 120 Energy Management Series DUAL TRI-STAGE


    OCR Scan     		PDF MJ100BX120/D J100BX MK145BP, MJ100BX120 4221 motorola transistor MOTOROLA L 358 ADC 808

    Untitled

    Abstract: No abstract text available
    Text: IRF630, RF1S630SM Semiconductor June 1999 Data Sheet 9A, 200V, 0.400 Ohm, N-Channel Power MOSFETs These are N-Channel enhancem ent mode silicon gate power field effect transistors. They are advanced power MOSFETs designed, tested, and guaranteed to withstand a


    OCR Scan     		PDF IRF630, RF1S630SM 400i2

    2N3347

    Abstract: 2N3350 2n3349 2N33 2N3352 2n3348 NS2N
    Text: TYPES 2N3347 THRU 2N3352 DUAL P-N-P SILICON TRANSISTORS B U L L E T IN N O . D L -S 7 2 1 1 8 8 1 , M A R C H 1 9 7 2 TWO P-N-P TRANSISTORS IN ONE PACKAGE Each Triode Electrically Similar to 2N2604 and 2N2605 Transistors Recommended for Low-Noise, High-Gain Differential Amplifiers


    OCR Scan     		PDF 2N3347 2N3352 2N2604 2N2605 2N2639 2N2644 2N3350 2n3349 2N33 2n3348 NS2N

    transistor 8831

    Abstract: 4204 photo diode
    Text: J ll H a r r i s U U S E M I C O N D U C T O R FRS9240D, FRS9240R, FFÎS9240H 7A, -200V, 0.735 Ohm, Rad Hard, P-Channel Power MOSFETs June 1998 Features Package • 7A, -200V, RDS on = 0.735Q TO-257AA • Second Generation Rad Hard MOSFET Results From New Design Concepts


    OCR Scan     		PDF FRS9240D, FRS9240R, S9240H -200V, O-257AA 100KRAD 300KRAD 1000KRAD 3000KRAD transistor 8831 4204 photo diode

    TBA641 equivalent

    Abstract: TBA641B11 TBA641 SW-485 TBA641A12 TBA641 a12 TBA641J TBA641A 4203 equivalent ay 9j
    Text: TBA641 'J AUDIO AMPLIFIER F A I R CH I L D L I N E A R I N T E G R A T E D C I R C U I T G E N E R A L D E S C R IP T IO N — The TB A 641 is a m onolithic integrated circuit designed for use as art audio power am plifier in portable radio receivers, tape recorders, record players and in industrial


    OCR Scan     		PDF TBA641J T8A641 TBA641 TBA641 equivalent TBA641B11 SW-485 TBA641A12 TBA641 a12 TBA641J TBA641A 4203 equivalent ay 9j

    Untitled

    Abstract: No abstract text available
    Text: RC45S9_ R A YT H E O N / 1 T S 'iV B b G O O Q b Q M k _OperationalAmpllllers T ~~}4- öS ~ SEMI CONDUCTOR RC4559 High-Gain Dual Operational Amplifier These amplifiers feature guaranteed ac perform­ ance which far exceeds that of the 7 4 1 -type


    OCR Scan     		PDF RC45S9_ RC4559 400Hz T-79-05-20

    HPM motor

    Abstract: inverter /TLC 4205 G MHPM7A20A60A
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Hybrid Power Module MHPM7A20A60A Integrated Power Stage for 2.0 hp Motor Drives This device is not recommended for new designs (This device is replaced by MHPM7A20E60DC3) This module integrates a 3-phase input rectifier bridge, 3-phase


    OCR Scan     		PDF MHPM7A20E60DC3) 7A20A60A HPM motor inverter /TLC 4205 G MHPM7A20A60A

    TBA641 a12

    Abstract: TBA641 equivalent TBA641B11 TBA641A12 TBA641 TBA641A ay 9j SW-485 4203 equivalent TBA641B
    Text: TBA641^ AUDIO AMPLIFIER FAIRCHILD LIN EAR I N T E G R A T E D C IR C U IT G E N E R A L D E S C R IP T IO N - T he T B A 6 4 1 is a m o n o lith ic in tegrated c irc u it designed fo r use as ah a u d io p ow er a m p lifie r in p o rta b le ra d io receivers, tape recorders, record players and in in du stria l


    OCR Scan     		PDF TBA641J TBA641 TBA641 a12 TBA641 equivalent TBA641B11 TBA641A12 TBA641A ay 9j SW-485 4203 equivalent TBA641B

    D 4206 TRANSISTOR

    Abstract: No abstract text available
    Text: Sept. 1995 Edition 2.0a FUJITSU DATA SHEET MB1508 SERIAL INPUT PLL FREQUENCY SYNTHESIZER SERIAL INPUT PLL FREQUENCY SYNTHESIZER ON CHIP 2.5 GHz PRESCALER DESCRIPTION The Fujitsu MB1508 with an on chip 2.5 GHz dual modulus prescaler is a serial input PLL Phase Locked Loop frequency synthesizer with pulse swallow function. It Is


    OCR Scan     		PDF MB1508 MB1508 1000pF. 20-LEAD FPT-20P-M01) F20003S-5C D 4206 TRANSISTOR

    irf*234 n

    Abstract: IRF235 sm 4205 IRF234d GE-X8
    Text: IRF234, IRF235 IRF236, IRF237 21 HARRIS N-Channel Power MOSFETs Avalanche-Energy Rated May 1992 Package Features T O -2 0 4 A A • 8.1A and 6.5A, 275V - 250V B O T T O M VIEW • rD S °n = 0 -4 5 0 and 0 .6 8 ÎÎ • Single Pulse Avalanche Energy Rated


    OCR Scan     		PDF IRF234, IRF235 IRF236, IRF237 IRF235, IRF237 irf*234 n sm 4205 IRF234d GE-X8