D 4204 TRANSISTOR Search Results

D 4206 TRANSISTOR

Abstract: 4204 4206 ANALOG MULTIPLIER-DIVIDER burr-brown Model 4206 4302 burr brown ic 4206 4302 multifunction converter D 4204 TRANSISTOR Burr-Brown 4206 IN4154 EZ88
Contextual Info: I 4204 4206 BURR-BROWN ANALOG MULTIPLIER-DIVIDER FEATURES • HIGH T O T A L A C C U R AC Y 0.25% and 0.5% max, no external trims 0 .1% and 0.2% typ. with external trims • LO W T E M P E R A T U R E D R IFT 100ppm /°C • S M A LL PACKAGE Dual-in-line metal or plastic

4206J

Abstract: Burr-Brown 4206
Contextual Info: ANALOG MULTIPLIER-DIVIDER FEATURES bandwidth at low cost. They use the log/antilog technique and are internally laser-trimmed. Multiply mode accuracies of 0.25% and 0.5% max are guaran­ teed with no external components. By following the external trim procedure described in the M ultiplica­

4206J

Contextual Info: BURR-BROW N 4204 4206 ANALOG MULTIPLIER-DIVIDER bandwidth at low cost. They use the log/ antilog technique and are internally laser-trimmed. Multiply mode accuracies of 0.25% and 0.5% max are guaran­ teed with no external components. By following the external trim procedure described in the Multiplica­

x4202

Abstract: ns 4203 AX4202 X4202 s 4200E
Contextual Info: >kiyixi>ki 19-1338; Rev 1; 10/98 U l t r a - H i g h - S p e e d , L o w -Noi se, Low -Pow er, S O T 2 3 O p e n - L o o p Buf f er s _ F e a t u r e s ♦ 2.2mA Supply Current The MAX4200-MAX4205 use a proprietary architecture to achieve up to 780M H z -3dB b a n d w id th , 280M H z

2N7074

Contextual Info: 2N7074 fTSìliconix In c o r p o r a te d N-Channel Enhancement Mode Transistor TO-254AA Hermetic Package TOP VIEW PRODUCT SUMMARY V BR DSS fDS(ON) •d (V) (ii) (A) 500 0.85 7.0 2 SOURCE 3 GATE Case Isolated ABSOLUTE MAXIMUM RATINGS (Tc = 25 C Unless Otherwise Noted)

2N7074

Contextual Info: 33E D SILICONIX INC fCT'S i ficonix • 62SM73S QOlbDEb 5 « S I X 2N7074 incorporated N-Channel Enhancement Mode Transistor TO-254AA Hermetic Package TOP VIEW o PRODUCT SUMMARY V BR|DSS "W* Id (A 500 0,85 7.0 1 DRAIN 2 SOURCE 3 GATE 1 2 3 Case Isolated

Contextual Info: RFP2N20 interdi Data Sheet J u ly 1999 F ile N u m b e r 2 8 8 1 .2 Features 2A, 200V, 3.500 Ohm, N-Channel Power MOSFET • 2A .200V These are N-Channel enhancement mode silicon gate power field effect transistors designed for applications such as switching regulators, switching converters, motor drivers,

NDS9955

Contextual Info: Na t i o n a l May 1996 Sem iconductor" NDS9955 Dual N-Channel Enhancement Mode Field Effect Transistor General Description Features These N-Channel enhancement mode power field effect transistors are produced using National's proprietary, high cell density, DMOS technology.

Contextual Info: Operational Amplifiers RC4559 RC4559 High-Gain Dual Operational Amplifier These amplifiers feature guaranteed ac perform­ ance which far exceeds that o f the 741-type amplifiers. The specially designed low-noise input transistors allow the 4559 to be used in

4559 raytheon

Abstract: RC4559N Stereo Tone Control
Contextual Info: RC4559 Operational Amplifiers RC4559 High-Gain Dual Operational Amplifier These amplifiers feature guaranteed ac perform­ ance which far exceeds that of the 741-type amplifiers. The specially designed low-noise input transistors allow the 4559 to be used in

RC4559N

Abstract: RC4559 RC4559M riaa preamplifier circuit diagram rc4559 riaa preamplifier circuit diagram RM4559 RM4559D RM4559T RV4559D RV4559N
Contextual Info: Operational Amplifiers RC4559 RC4559 High-Gain Dual Operational Amplifier These amplifiers feature guaranteed ac perform­ ance which far exceeds that of the 741-type amplifiers. The specially designed low-noise input transistors allow the 4559 to be used in

4221 motorola transistor

Abstract: MOTOROLA L 358 ADC 808
Contextual Info: 6367254 MOTOROLA SC CXSTRS/R F MOTOROLA 89D 7 9 9 6 8 Dn ~ - 3 3 - 3 5 ' A Order this data sheet by MJ100BX120/D a^ ^ | t3t7a^ DD7-HWS Q f SEMICONDUCTOR TECHNICAL DATA NPN Silicon Power Transistor Module M J100BX 120 Energy Management Series DUAL TRI-STAGE

Contextual Info: IRF630, RF1S630SM Semiconductor June 1999 Data Sheet 9A, 200V, 0.400 Ohm, N-Channel Power MOSFETs These are N-Channel enhancem ent mode silicon gate power field effect transistors. They are advanced power MOSFETs designed, tested, and guaranteed to withstand a

2N3347

Abstract: 2N3350 2n3349 2N33 2N3352 2n3348 NS2N
Contextual Info: TYPES 2N3347 THRU 2N3352 DUAL P-N-P SILICON TRANSISTORS B U L L E T IN N O . D L -S 7 2 1 1 8 8 1 , M A R C H 1 9 7 2 TWO P-N-P TRANSISTORS IN ONE PACKAGE Each Triode Electrically Similar to 2N2604 and 2N2605 Transistors Recommended for Low-Noise, High-Gain Differential Amplifiers

transistor 8831

Abstract: 4204 photo diode
Contextual Info: J ll H a r r i s U U S E M I C O N D U C T O R FRS9240D, FRS9240R, FFÎS9240H 7A, -200V, 0.735 Ohm, Rad Hard, P-Channel Power MOSFETs June 1998 Features Package • 7A, -200V, RDS on = 0.735Q TO-257AA • Second Generation Rad Hard MOSFET Results From New Design Concepts

AAbZ TRANSISTOR 5 PIN

Abstract: ULTRA HIGH SPEED FREQUENCY DIVIDER MAX4200 MAX4200ESA MAX4205 maxim dallas 2501
Contextual Info: 19-1338; Rev 3; 3/07 Ultra-High-Speed, Low-Noise, Low-Power, SOT23 Open-Loop Buffers _Features The MAX4200–MAX4205 are ultra-high-speed, openloop buffers featuring high slew rate, high output current, low noise, and excellent capacitive-load-driving

Contextual Info: 19-1338; Rev 3; 3/07 Ultra-High-Speed, Low-Noise, Low-Power, SOT23 Open-Loop Buffers _Features The MAX4200–MAX4205 are ultra-high-speed, openloop buffers featuring high slew rate, high output current, low noise, and excellent capacitive-load-driving

TBA641 equivalent

Abstract: TBA641B11 TBA641 SW-485 TBA641A12 TBA641 a12 TBA641J TBA641A 4203 equivalent ay 9j
Contextual Info: TBA641 'J AUDIO AMPLIFIER F A I R CH I L D L I N E A R I N T E G R A T E D C I R C U I T G E N E R A L D E S C R IP T IO N — The TB A 641 is a m onolithic integrated circuit designed for use as art audio power am plifier in portable radio receivers, tape recorders, record players and in industrial

stk404-130s

Abstract: STK404-100S STK404-120S EN7733 12v 100w TRANSISTOR AUDIO AMPLIFIER STK4040 100W sub amplifier STK404-130S equivalent
Contextual Info: Ordering number : EN7733 Thick-Film Hybrid IC STK404-120S One-Channel Class AB Audio Power Amplifier IC 80W Overview The STK404-000S series products are audio power amplifier hybrid ICs that consist of optimally-designed discrete component power amplifier circuits that have been miniaturized using SANYO’s unique insulated metal substrate

Contextual Info: RC45S9_ R A YT H E O N / 1 T S 'iV B b G O O Q b Q M k _OperationalAmpllllers T ~~}4- öS ~ SEMI CONDUCTOR RC4559 High-Gain Dual Operational Amplifier These amplifiers feature guaranteed ac perform­ ance which far exceeds that of the 7 4 1 -type

HPM motor

Abstract: inverter /TLC 4205 G MHPM7A20A60A
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Hybrid Power Module MHPM7A20A60A Integrated Power Stage for 2.0 hp Motor Drives This device is not recommended for new designs (This device is replaced by MHPM7A20E60DC3) This module integrates a 3-phase input rectifier bridge, 3-phase

TBA641 a12

Abstract: TBA641 equivalent TBA641B11 TBA641A12 TBA641 TBA641A ay 9j SW-485 4203 equivalent TBA641B
Contextual Info: TBA641^ AUDIO AMPLIFIER FAIRCHILD LIN EAR I N T E G R A T E D C IR C U IT G E N E R A L D E S C R IP T IO N - T he T B A 6 4 1 is a m o n o lith ic in tegrated c irc u it designed fo r use as ah a u d io p ow er a m p lifie r in p o rta b le ra d io receivers, tape recorders, record players and in in du stria l

D 4206 TRANSISTOR

Contextual Info: Sept. 1995 Edition 2.0a FUJITSU DATA SHEET MB1508 SERIAL INPUT PLL FREQUENCY SYNTHESIZER SERIAL INPUT PLL FREQUENCY SYNTHESIZER ON CHIP 2.5 GHz PRESCALER DESCRIPTION The Fujitsu MB1508 with an on chip 2.5 GHz dual modulus prescaler is a serial input PLL Phase Locked Loop frequency synthesizer with pulse swallow function. It Is

irf*234 n

Abstract: IRF235 sm 4205 IRF234d GE-X8
Contextual Info: IRF234, IRF235 IRF236, IRF237 21 HARRIS N-Channel Power MOSFETs Avalanche-Energy Rated May 1992 Package Features T O -2 0 4 A A • 8.1A and 6.5A, 275V - 250V B O T T O M VIEW • rD S °n = 0 -4 5 0 and 0 .6 8 ÎÎ • Single Pulse Avalanche Energy Rated