D 2095 TRANSISTOR Search Results

FBN-36220

Abstract: FBN-L109 FBT-00-031 IN4002 diode FBL-00-030 lambda transistor fbn FBL-00 FBN36485 FBN-L115 FBN-L102
Contextual Info: INSTRUCTION MANUAL FOR REGULATED POWER SUPPLIES LL SERIES THIS MANUAL APPLIES TO UNITS BEARING SERIAL NO. PREFIXES À-D - 2095 - This manual provides instructions intended for the operation of Lambda power supplies, and is not to be reproduced without the written consent

GES5812

Abstract: intermediat GES5810 GES5811 GES5813
Contextual Info: G E SOLID STATE 3 8 75 0 8 1 G E 01 SOLID STATE DËfJ 3Ô7SDÔ1 Gai?1!?! â 01E 17971 T D - Z s ? - ¿ .3 - Signal Transistors GES5810, GES5811, GES5812, GES5813

Contextual Info: DC-DC 400/600 Watts MCC Series xppower.com • Baseplate-cooled • Up to 4 Regulated Outputs • Optional 200 W Conditioned Output • MIL-STD 1275 and DEF-STAN 61-5 • MIL-STD 461 and DEF-STAN 59-411 • Rugged Construction to MIL-STD 810F • 3 Year Warranty

C277

Abstract: 6N55 SEFH6N55
Contextual Info: SEFH6H55 SEFH7N50 SEFM6N55 SEFM7H50 N-CHANNEL POWER MOS TRANSISTORS HIGH SPEED SWITCHING APPLICATIONS These products are diffused multi-cell silicon gate N-Ghannel enhancement mode P ow er-M os field effect transistors, V D SS R D S ON •d 500 V 0.8 Q 7A

TA 2092 N

Abstract: 2SA9411 2SA942 2SC2082 2093H
Contextual Info: 5 - - FOR U SE BY E LEC TR IC IA N S O VER SEA S : •M-EiiOSWHE New Transistor Manual lists all the transistors registered with the Electronic Industries Association of Japan (EIAJ), arranged in a manner easy to look up. We hope that you will make full use of the data provided in this manual by referring to the Japanese-English

TO-251 footprint

Abstract: SSM20G45EGJ SSM20G45 STROBE FLASHER USE IGBT SSM20G45EGH 20g45e
Contextual Info: SSM20G45EGH/J N-channel Insulated-Gate Bipolar Transistor PRODUCT SUMMARY V CES 450V V CE sat 5V typ. I CP 130A DESCRIPTION The SSM20G45E acheives fast switching performance with low gate charge without a complex drive circuit. It is suitable for use in short-duration, high-current strobe

MRF21085

Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line MRF21085 MRF21085S RF Power Field Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs Designed for W–CDMA base station applications at frequencies from 2110 to 2170 MHz. Suitable for TDMA, CDMA and multicarrier amplifier applicat i o n s . To b e u s e d i n C l a s s A B f o r P C N – P C S / c e l l u l a r r a d i o a n d W L L

J176 equivalent

Abstract: MRF21085S MRF21085
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line MRF21085 MRF21085S MRF21085SR3 MRF21085LS MRF21085LSR3 RF Power Field Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs Designed for W–CDMA base station applications with frequencies from 2110

Contextual Info: Freescale Semiconductor Technical Data Rev. 7, 1/2005 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs MRF21085R3 MRF21085LSR3 Designed for W- CDMA base station applications with frequencies from 2110 to 2170 MHz. Suitable for TDMA, CDMA and multicarrier amplifier applicat i o n s . To b e u s e d i n C l a s s A B f o r P C N - P C S / c e l l u l a r r a d i o a n d W L L

MOTOROLA J210

Abstract: MRF21085
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line MRF21085 MRF21085R3 MRF21085SR3 MRF21085LSR3 RF Power Field Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs Designed for W–CDMA base station applications with frequencies from 2110

T495X106K035AS4394

Abstract: MRF21085 100B100JCA500X CDR33BX104AKWS MRF21085S
Contextual Info: MOTOROLA Order this document by MRF21085/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line MRF21085 MRF21085S RF Power Field Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs Designed for W–CDMA base station applications at frequencies from 2110

Contextual Info: HM62W1400H Series 4M High Speed SRAM 4-Mword x 1-bit HITACHI ADE-203-773E (Z) Rev. 2.0 Nov. 11, 1998 Description The HM62W1400H is a 4-Mbit high speed staticRAM organized 4-Mword x 1-bit. It has realized high speed access time by employing CMOS process (4-transistor + 2-poly resistor memory cell)and high speed

MRF21085

Contextual Info: MOTOROLA Order this document by MRF21085/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs Designed for W- CDMA base station applications with frequencies from 2110 to 2170 MHz. Suitable for TDMA, CDMA and multicarrier amplifier applicat i o n s . To b e u s e d i n C l a s s A B f o r P C N - P C S / c e l l u l a r r a d i o a n d W L L

MOTOROLA J210

Abstract: MRF21085
Contextual Info: MOTOROLA Order this document by MRF21085/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line MRF21085 MRF21085R3 MRF21085SR3 MRF21085LSR3 RF Power Field Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs Designed for W–CDMA base station applications with frequencies from 2110

MOTOROLA J210

Abstract: MRF21085 T495X106K035AS4394 100B100JCA500X CDR33BX104AKWS MRF21085LSR3 MRF21085R3 MRF21085SR3
Contextual Info: MOTOROLA Order this document by MRF21085/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line MRF21085 MRF21085R3 MRF21085SR3 MRF21085LSR3 RF Power Field Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs Designed for W–CDMA base station applications with frequencies from 2110

MOTOROLA J210

Abstract: J357 MRF21085
Contextual Info: MOTOROLA Order this document by MRF21085/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line MRF21085 MRF21085S MRF21085SR3 MRF21085LS MRF21085LSR3 RF Power Field Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs Designed for W–CDMA base station applications with frequencies from 2110

MARKING 2160

Abstract: MARKING WB1 th 2190 100B100JCA500X CDR33BX104AKWS MRF21085 MRF21085LSR3
Contextual Info: Freescale Semiconductor Technical Data Document Number: MRF21085 Rev. 11, 10/2008 RF Power Field Effect Transistor MRF21085LSR3 Designed for W-CDMA base station applications with frequencies from 2110 to 2170 MHz. Suitable for TDMA, CDMA and multicarrier amplifier applicat i o n s . To b e u s e d i n C l a s s A B f o r P C N - P C S / c e l l u l a r r a d i o a n d W L L

T495X106K035AS4394

Abstract: 100B100JCA500X CDR33BX104AKWS MRF21085 MRF21085LSR3
Contextual Info: Freescale Semiconductor Technical Data Document Number: MRF21085 Rev. 11, 10/2008 RF Power Field Effect Transistor MRF21085LSR3 Designed for W- CDMA base station applications with frequencies from 2110 to 2170 MHz. Suitable for TDMA, CDMA and multicarrier amplifier applicat i o n s . To b e u s e d i n C l a s s A B f o r P C N - P C S / c e l l u l a r r a d i o a n d W L L

MRF21085

Contextual Info: Freescale Semiconductor Technical Data Document Number: MRF21085 Rev. 10, 10/2008 RF Power Field Effect Transistor MRF21085LR3 Designed for W-CDMA base station applications with frequencies from 2110 to 2170 MHz. Suitable for TDMA, CDMA and multicarrier amplifier applicat i o n s . To b e u s e d i n C l a s s A B f o r P C N - P C S / c e l l u l a r r a d i o a n d W L L

100B100JCA500X

Abstract: AN1955 MRF21085 MRF21085LSR3 MRF21085R3 MRF21085SR3
Contextual Info: MOTOROLA Freescale Semiconductor, Inc. Order this document by MRF21085/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field Effect Transistors Freescale Semiconductor, Inc. N - Channel Enhancement - Mode Lateral MOSFETs Designed for W- CDMA base station applications with frequencies from 2110

Contextual Info: Freescale Semiconductor Technical Data Document Number: MRF21085-1 Rev. 10, 10/2008 RF Power Field Effect Transistor MRF21085LR3 Designed for W-CDMA base station applications with frequencies from 2110 to 2170 MHz. Suitable for TDMA, CDMA and multicarrier amplifier

j340 motorola make

Abstract: MRF21085
Contextual Info: Freescale Semiconductor Technical Data MRF21085 Rev. 7, 1/2005 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs MRF21085R3 MRF21085LSR3 Designed for W- CDMA base station applications with frequencies from 2110 to 2170 MHz. Suitable for TDMA, CDMA and multicarrier amplifier applicat i o n s . To b e u s e d i n C l a s s A B f o r P C N - P C S / c e l l u l a r r a d i o a n d W L L

MRF21085

Contextual Info: Freescale Semiconductor Technical Data MRF21085 Rev. 7, 1/2005 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs MRF21085R3 MRF21085LSR3 Designed for W- CDMA base station applications with frequencies from 2110 to 2170 MHz. Suitable for TDMA, CDMA and multicarrier amplifier applicat i o n s . To b e u s e d i n C l a s s A B f o r P C N - P C S / c e l l u l a r r a d i o a n d W L L

MRF21085LR3

Abstract: 100B100JCA500X CDR33BX104AKWS MRF21085 MRF21085LSR3 J176 equivalent
Contextual Info: Freescale Semiconductor Technical Data Document Number: MRF21085 Rev. 9, 5/2006 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs MRF21085LR3 MRF21085LSR3 Designed for W- CDMA base station applications with frequencies from 2110